The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Gary W. Rubloff sits on this spectrum.
This scientist: 397 publications — 77th percentile
77% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Gary W. Rubloff sits on this spectrum.
This scientist: 76 D-Index — 75th percentile
75% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Gary W. Rubloff is affiliated with the University of Maryland, College Park in the United States. Their research primarily focuses on engineering and materials science, with significant contributions to electrical and electronic engineering as well as materials chemistry. The scientist has explored various subfields including polymers and plastics, automotive engineering, and electronic, optical, and magnetic materials.
The main topics of their work include advancements in battery materials, advanced battery materials and technologies, semiconductor materials and devices, transition metal oxide nanomaterials, advanced battery technologies research, thermal expansion and ionic conductivity, and inorganic chemistry and materials. Their research outputs cover a broad spectrum within these areas, reflecting multidisciplinary expertise.
Frequent publication venues for Gary W. Rubloff include:
Some of their recent papers are:
Frequent co-authors associated with Gary W. Rubloff include:
Gary W. Rubloff received the distinction of Fellow of the American Physical Society (APS) in 1986. The citation for this award notes pioneering applications of surface electron spectroscopies and optical techniques to understand chemical reactions and properties of interfaces and surfaces, with a particular focus on silicon interfaces.
Xiaogang Han;Yunhui Gong;Kun Kelvin Fu;Xingfeng He
Hyunmin Yi;Li-Qun Wu;William E. Bentley;Reza Ghodssi
Alexander C Kozen;Chuan Fu Lin;Alexander J Pearse;Marshall A Schroeder
G. W. Rubloff
Parag Banerjee;Israel Perez;Laurent Henn-Lecordier;Sang Bok Lee;Sang Bok Lee
Raymond A. Adomaitis;John N. Kidder;Gary W. Rubloff
R. Tromp;G. W. Rubloff;P. Balk;F. K. LeGoues
Parag Banerjee;Won-Jae Lee;Ki-Ryeol Bae;Sang Bok Lee
Zhe Gui;Hongli Zhu;Eleanor Gillette;Xiaogang Han
Li-Qun Wu,†,‡;Anand P. Gadre;Hyunmin Yi;Mark J. Kastantin
Wei Luo;Chuan-Fu Lin;Oliver Zhao;Malachi Noked;Malachi Noked
Alexander C. Kozen;Alexander J. Pearse;Chuan-Fu Lin;Malachi Noked
Paul S Ho;P. O. Hahn;J. W. Bartha;G. W. Rubloff
Tao Gao;Xiaogang Li;Xiwen Wang;Junkai Hu
Xinyi Chen;Hongli Zhu;Yu-Chen Chen;Yuanyuan Shang
Chanyuan Liu;Eleanor I. Gillette;Xinyi Chen;Xinyi Chen;Alexander J. Pearse
Jordan F. Betz;Wei W. Yu;Yi Cheng;Ian M. White
Tao Gao;Malachi Noked;Alex J Pearse;Eleanor Gillette
Rohan Fernandes;Li-Qun Wu,†,‡;Tianhong Chen;Hyunmin Yi
S. T. Koev;P. H. Dykstra;X. Luo;G. W. Rubloff
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