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D-Index & Metrics

Materials Science

D-Index
47
Citations
7869
World Ranking
11161
National Ranking
2623

Kelvin G. Lynn publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Kelvin G. Lynn sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 356 publications — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Kelvin G. Lynn D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Kelvin G. Lynn sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 47 D-Index — 15th percentile

15% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2001 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 1988 - Fellow of American Physical Society (APS) Citation For developing variable energy positron beams for studying solid surfaces and interfaces

Overview

Kelvin G. Lynn is affiliated with Washington State University in the United States and has contributed extensively to the fields of Materials Science and Engineering. Their research primarily focuses on materials chemistry, electrical and electronic engineering, and subfields such as electronic, optical and magnetic materials, renewable energy, sustainability, and geochemistry and petrology.

The scientist's research covers a variety of topics including Ga2O3 and related materials, ZnO doping and properties, advanced photocatalysis techniques, chalcogenide semiconductor thin films, advanced semiconductor detectors and materials, quantum dots synthesis and properties, and electronic and structural properties of oxides.

Lynn has published several papers in notable venues, including:

  • Gallium vacancy formation in oxygen annealed β-Ga2O3, 2021, Journal of Applied Physics
  • Compensation of Shallow Donors by Gallium Vacancies in Monoclinic β-Ga2O3, 2021, Physical Review Applied
  • Impact of dopant-induced band tails on optical spectra, charge carrier transport, and dynamics in single-crystal CdTe, 2022, Scientific Reports
  • Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped β-Ga2O3 crystals, 2020, Applied Physics Letters
  • CdTe synthesis and crystal growth using the high-pressure Bridgman technique, 2020, Journal of Crystal Growth

Frequent publication venues for Lynn include:

  • Journal of Crystal Growth
  • Applied Physics Letters
  • Journal of Applied Physics
  • Physical Review Applied
  • Scientific Reports

Lynn collaborates often with a set of co-authors, including:

  • John S. McCloy
  • Santosh K. Swain
  • Muad Saleh
  • Jani Jesenovec
  • Marc H. Weber

The scientist has received recognition in the form of fellowships from major organizations. They are a Fellow of the American Association for the Advancement of Science (AAAS), awarded in 2001, and a Fellow of the American Physical Society (APS), awarded in 1988 with a citation for developing variable energy positron beams for studying solid surfaces and interfaces.

Best Publications

  • Interaction of positron beams with surfaces, thin films, and interfaces

    Peter J. Schultz;K. G. Lynn

  • CdTe solar cells with open-circuit voltage breaking the 1 V barrier

    James M. Burst;Joel N. Duenow;David S. Albin;Eric Colegrove

  • Characterization of defects in Si and SiO2−Si using positrons

    P. Asoka‐Kumar;K. G. Lynn;D. O. Welch

  • Nature of native defects in ZnO.

    F. A. Selim;M. H. Weber;D. Solodovnikov;K. G. Lynn

  • Positron-annihilation momentum profiles in aluminum: Core contribution and the independent-particle model

    K. G. Lynn;J. R. MacDonald;R. A. Boie;L. C. Feldman

  • Infrared spectroscopy of hydrogen in ZnO

    M. D. McCluskey;S. J. Jokela;K. K. Zhuravlev;P. J. Simpson

  • Defect identification using the core-electron contribution in Doppler-broadening spectroscopy of positron-annihilation radiation.

    S. Szpala;P. Asoka-Kumar;B. Nielsen;J. P. Peng

  • Improved slow-positron yield using a single crystal tungsten moderator

    A. Vehanen;K. G. Lynn;P. J. Schultz;Morten Mostgaard Eldrup

  • Measurement of positron reemission from thin single-crystal W(100) films

    D. M. Chen;K. G. Lynn;R. Pareja;Bent Nielsen

  • Stability of vacancies during solute clustering in Al-Cu-based alloys

    A. Somoza;M. P. Petkov;K. G. Lynn;A. Dupasquier

  • Measurement of the Positron Surface-State Lifetime for Al

    K. G. Lynn;W. E. Frieze;Peter J. Schultz

  • Slow positrons in metal single crystals. I. Positronium formation at Ag(100), Ag(111), and Cu(111) surfaces

    K. G. Lynn;D. O. Welch

  • Development and use of a thin‐film transmission positron moderator

    K. G. Lynn;B. Nielsen;J. H. Quateman

  • Slow positrons in single-crystal samples of Al and Al- Al x O y

    K. G. Lynn;H. Lutz

  • Physico-chemical characterization of nanofiltration membranes.

    Katleen Boussu;Jérémie De Baerdemaeker;Jérémie De Baerdemaeker;Charles Dauwe;Marc Weber

  • Effect of different preparation conditions on light emission from silicon implanted SiO2 layers

    G. Ghislotti;B. Nielsen;P. Asoka‐Kumar;K. G. Lynn

  • Superfast timing performance from ZnO scintillators

    P.J. Simpson;P.J. Simpson;R. Tjossem;A.W. Hunt;K.G. Lynn

  • Detection of current‐induced vacancies in thin aluminum–copper lines using positrons

    P. Asoka‐Kumar;K. O’Brien;K. G. Lynn;P. J. Simpson

  • Defects and impurities at the Si/Si(100) interface studied with monoenergetic positrons.

    Peter J. Schultz;E. Tandberg;K. G. Lynn;Bent Nielsen

  • Trapping properties of cadmium vacancies in Cd 1 − x Zn x Te

    Cs. Szeles;Y. Y. Shan;K. G. Lynn;A. R. Moodenbaugh

  • Study of defect levels in CdTe using thermoelectric effect spectroscopy

    Raji Soundararajan;Kelvin G. Lynn;Salah Awadallah;Csaba Szeles

  • Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy

    Jong-Lam Lee;Marc Weber;Jong Kyu Kim;Jae Won Lee

  • Incident wavelength and polarization dependence of spectral shifts in β-Ga 2 O 3 UV photoluminescence

    Yunshan Wang;Peter T. Dickens;Joel B. Varley;Xiaojuan Ni

  • Identification of defects in Y3Al5O12 crystals by positron annihilation spectroscopy

    F. A. Selim;D. Solodovnikov;M. H. Weber;K. G. Lynn

  • Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3

    Jacob R. Ritter;Jesse Huso;Jesse Huso;Peter T. Dickens;Joel B. Varley

  • Calculation of the Doppler broadening of the electron-positron annihilation radiation in defect-free bulk materials

    V.J. Ghosh;M. Alatalo;P. Asoka-Kumar;B. Nielsen

  • Positronium formation and diffusion in crystalline and amorphous ice using a variable-energy positron beam

    M. Eldrup;A. Vehanen;Peter J. Schultz;K. G. Lynn

  • Corrigendum: CdTe solar cells with open-circuit voltage breaking the 1 V barrier

    J. M. Burst;J. N. Duenow;D. S. Albin;E. Colegrove

Frequent Co-Authors

Jene Andrew Golovchenko
Jene Andrew Golovchenko Harvard University
Darius Kuciauskas
Darius Kuciauskas National Renewable Energy Laboratory
Wyatt K. Metzger
Wyatt K. Metzger National Renewable Energy Laboratory
Gary W. Rubloff
Gary W. Rubloff University of Maryland, College Park
Sriram Krishnamoorthy
Sriram Krishnamoorthy University of California, Santa Barbara
Matthew O. Reese
Matthew O. Reese National Renewable Energy Laboratory
Arnold Burger
Arnold Burger Fisk University
Su-Huai Wei
Su-Huai Wei Eastern Institute of Technology, Ningbo
Miguel A. Contreras
Miguel A. Contreras American Chemet Corporation
Carlo Enrico Bottani
Carlo Enrico Bottani Polytechnic University of Milan

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