World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
59
Citations
12486
World Ranking
7372
National Ranking
306

Jong-Lam Lee publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jong-Lam Lee sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 486 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jong-Lam Lee D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jong-Lam Lee sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 59 D-Index — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Jong-Lam Lee is affiliated with Pohang University of Science and Technology in South Korea. Their research primarily spans Materials Science, Engineering, and Energy, with notable contributions to several subfields including Materials Chemistry, Renewable Energy, Sustainability and the Environment, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, and Catalysis.

The research focus emphasizes specific topics such as CO2 reduction techniques and catalysts, ionic liquids properties and applications, advanced thermoelectric materials and devices, enzyme structure and function, electrocatalysts for energy conversion, advanced battery technologies research, and advanced photocatalysis techniques.

Among their recent papers are:

  • Photonic Encryption Platform via Dual-Band Vectorial Metaholograms in the Ultraviolet and Visible (2022, ACS Nano)
  • CuS-Decorated GaN Nanowires on Silicon Photocathodes for Converting CO2 Mixture Gas to HCOOH (2021, Journal of the American Chemical Society)
  • Tailoring electronic structure of bifunctional Cu/Ag layered electrocatalysts for selective CO2 reduction to CO and CH4 (2020, Nano Energy)
  • Compositional and Geometrical Effects of Bimetallic Cu-Sn Catalysts on Selective Electrochemical CO2 Reduction to CO (2020, ACS Applied Energy Materials)
  • Spontaneously Formed CuSx Catalysts for Selective and Stable Electrochemical Reduction of Industrial CO2 Gas to Formate (2020, ACS Applied Materials & Interfaces)

Jong-Lam Lee frequently collaborates with several researchers who have coauthored multiple publications. These coauthors include:

  • Wan Jae Dong
  • Won Seok Cho
  • Sangwon Baek
  • Jin Wook Lim
  • Jae-Yong Park

Their work is published predominantly in journals such as:

  • ACS Applied Materials & Interfaces
  • ACS Applied Energy Materials
  • Applied Surface Science
  • Journal of Applied Crystallography
  • ACS Catalysis

Best Publications

  • Flexible Near-Field Wireless Optoelectronics as Subdermal Implants for Broad Applications in Optogenetics

    Gunchul Shin;Adrian M. Gomez;Ream Al-Hasani;Yu Ra Jeong

  • Shape-controlled bismuth nanoflakes as highly selective catalysts for electrochemical carbon dioxide reduction to formate

    Sungjoo Kim;Wan Jae Dong;Seungo Gim;Woonbae Sohn

  • Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment

    Jong Kyu Kim;Jong-Lam Lee;Jae Won Lee;Hyun Eoi Shin

  • Vertical-structure light-emitting device

    Lee Jong-Lam;Jeong In-Kwon;Yoo Myung Cheol

  • Review paper: Recent developments in light extraction technologies of organic light emitting diodes

    Kihyon Hong;Jong-Lam Lee

  • Ohmic contact formation mechanism of Ni on n-type 4H–SiC

    Sang Youn Han;Ki Hong Kim;Jong Kyu Kim;Ho Won Jang

  • Detection of single photons using a field-effect transistor gated by a layer of quantum dots

    A. J. Shields;M. P. O’Sullivan;I. Farrer;D. A. Ritchie

  • Optical Properties of WO3/Ag/WO3 Multilayer As Transparent Cathode in Top-Emitting Organic Light Emitting Diodes

    Kihyon Hong;Kisoo Kim;Sungjun Kim;Illhwan Lee

  • Hydrogen trapping in AISI 4340 steel

    J. L. Lee;Jai Young Lee

  • Effect of ultraviolet-ozone treatment of indium-tin-oxide on electrical properties of organic light emitting diodes

    Soo Young Kim;Jong-Lam Lee;Ki-Beom Kim;Yoon-Heung Tak

  • Mechanism for the increase of indium-tin-oxide work function by O2 inductively coupled plasma treatment

    Kwang Ho Lee;Ho Won Jang;Ki-Beom Kim;Yoon-Heung Tak

  • Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition

    Ho Won Jang;Jung-Hee Lee;Jong-Lam Lee

  • Mechanism for Ohmic contact formation of oxidized Ni/Au on p-type GaN

    Ho Won Jang;Soo Young Kim;Jong-Lam Lee

  • Enhancement of hole injection using O2 plasma-treated Ag anode for top-emitting organic light-emitting diodes

    Ho Won Choi;Soo Young Kim;Ki-Beom Kim;Yoon-Heung Tak

  • Design of dielectric/metal/dielectric transparent electrodes for flexible electronics

    Sungjun Kim;Jong-Lam Lee

  • Mechanism for ohmic contact formation of Ni∕Ag contacts on p-type GaN

    Ho Won Jang;Jong-Lam Lee

  • X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN

    K. A. Rickert;A. B. Ellis;Jong Kyu Kim;Jong-Lam Lee

  • Work-Function Decrease of Graphene Sheet Using Alkali Metal Carbonates

    Ki Chang Kwon;Kyoung Soon Choi;Buem Joon Kim;Jong-Lam Lee

  • Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaN

    Jong-Lam Lee;Jong Kyu Kim;Jae Won Lee;Yong Jo Park

  • CuS-Decorated GaN Nanowires on Silicon Photocathodes for Converting CO 2 Mixture Gas to HCOOH

    Wan Jae Dong;Wan Jae Dong;Ishtiaque Ahmed Navid;Yixin Xiao;Jin Wook Lim

  • Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaN∕GaN heterostructure field-effect transistors

    Chang Min Jeon;Jong-Lam Lee

  • Synthesis of atomically thin transition metal disulfides for charge transport layers in optoelectronic devices.

    Ki Chang Kwon;Cheolmin Kim;Quyet Van Le;Seungo Gim

Frequent Co-Authors

Ho Won Jang
Ho Won Jang Seoul National University
Soo Young Kim
Soo Young Kim Korea University
Jong Kyu Kim
Jong Kyu Kim Pohang University of Science and Technology
Jeong Min Baik
Jeong Min Baik Sungkyunkwan University
Jung Ho Je
Jung Ho Je Pohang University of Science and Technology
Joon Seop Kwak
Joon Seop Kwak Sunchon National University
Yeukuang Hwu
Yeukuang Hwu Academia Sinica
Jeong Ho Cho
Jeong Ho Cho Yonsei University
Tae-Woo Lee
Tae-Woo Lee Seoul National University
Jeong Yong Lee
Jeong Yong Lee Korea Advanced Institute of Science and Technology

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