2026 Filippo Giannazzo: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	54	8917	8613	162	157	413	10277

Overview

Filippo Giannazzo is affiliated with the National Research Council (CNR) in Italy. Their research primarily spans the fields of engineering and materials science, with a focused expertise in electrical and electronic engineering as well as materials chemistry.

The scientist has contributed extensively to subfields including:

Electrical and Electronic Engineering
Materials Chemistry
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Giannazzo's work covers a wide range of topics, among which semiconductor materials and devices, silicon carbide semiconductor technologies, and semiconductor materials and interfaces are prominent. The research also involves investigation into two-dimensional materials and applications, graphene research and applications, MXene and MAX phase materials, and GaN-based semiconductor devices and materials.

Frequent collaborators include Fabrizio Roccaforte, Patrick Fiorenza, Emanuela Schilirò, Salvatore Ethan Panasci, and Giuseppe Greco.

Their publications appear repeatedly in notable journals such as Nanomaterials, Applied Surface Science, arXiv (Cornell University), Materials Science in Semiconductor Processing, and Materials Science Forum.

Recent scientific contributions by Filippo Giannazzo include:

"Strain, Doping, and Electronic Transport of Large Area Monolayer MoS₂ Exfoliated on Gold and Transferred to an Insulating Substrate," 2021, ACS Applied Materials & Interfaces
"Emerging SiC Applications beyond Power Electronic Devices," 2023, Micromachines
"Selective Doping in Silicon Carbide Power Devices," 2021, Materials
"2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface," 2023, CrystEngComm
"Indium Nitride at the 2D Limit," 2020, Advanced Materials

Best Publications

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Fabrizio Roccaforte;Patrick Fiorenza;Giuseppe Greco;Raffaella Lo Nigro

556
Citations
Ion irradiation and defect formation in single layer graphene

Giuseppe Compagnini;Filippo Giannazzo;Sushant Sonde;Vito Raineri

281
Citations
Barrier inhomogeneity and electrical properties of Pt∕GaN Schottky contacts

Ferdinando Iucolano;Fabrizio Roccaforte;Filippo Giannazzo;Vito Raineri

232
Citations
Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum

I. Deretzis;A. Alberti;G. Pellegrino;E. Smecca

198
Citations
Recent advances on dielectrics technology for SiC and GaN power devices

F. Roccaforte;P. Fiorenza;G. Greco;M. Vivona

188
Citations
Challenges for energy efficient wide band gap semiconductor power devices

Fabrizio Roccaforte;Patrick Fiorenza;Giuseppe Greco;Raffaella Lo Nigro

145
Citations
Screening Length and Quantum Capacitance in Graphene by Scanning Probe Microscopy

F. Giannazzo;S. Sonde;V. Raineri;E. Rimini

137
Citations
Surface and interface issues in wide band gap semiconductor electronics

F. Roccaforte;F. Giannazzo;F. Iucolano;J. Eriksson

130
Citations
Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene

Filippo Giannazzo;Sushant Sonde;Raffaella Lo Nigro;Emanuele Rimini

124
Citations
Anchoring Molecular Magnets on the Si(100) Surface

Guglielmo G. Condorelli;Alessandro Motta;Ignazio L. Fragalà;Filippo Giannazzo

123
Citations
Nanostructuring in Ge by self-ion implantation

L. Romano;G. Impellizzeri;M. V. Tomasello;F. Giannazzo

123
Citations
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

Patrick Fiorenza;Filippo Giannazzo;Fabrizio Roccaforte

120
Citations
Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy

S. Sonde;F. Giannazzo;V. Raineri;R. Yakimova

120
Citations
Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC

F Giannazzo;I Deretzis;A La Magna;F Roccaforte

112
Citations
Strain, Doping, and Electronic Transport of Large Area Monolayer MoS 2 Exfoliated on Gold and Transferred to an Insulating Substrate

Salvatore Ethan Panasci;Emanuela Schilirò;Giuseppe Greco;Marco Cannas

112
Citations
XPS and AFM Characterization of the Enzyme Glucose Oxidase Immobilized on SiO2 Surfaces

Sebania Libertino;Filippo Giannazzo;Venera Aiello;Antonino Scandurra

104
Citations
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization

Filippo Giannazzo;Gabriele Fisichella;Giuseppe Greco;Salvatore Di Franco

101
Citations
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

P. Fiorenza;F. Giannazzo;M. Vivona;A. La Magna

101
Citations
Nanoscale carrier transport in Ti /Al/Ni/Au Ohmic contacts on AlGaN epilayers grown on Si(111)

F. Roccaforte;F. Iucolano;F. Giannazzo;A. Alberti

101
Citations
Temperature behavior of inhomogeneous Pt/GaN Schottky contacts

Ferdinando Iucolano;Fabrizio Roccaforte;Filippo Giannazzo;Vito Raineri

100
Citations
Self-organization of gold nanoclusters on hexagonal SiC and SiO2 surfaces

F. Ruffino;A. Canino;M. G. Grimaldi;F. Giannazzo

96
Citations