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Patrick Fiorenza

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 33 6127 5883 272 267 201 4044

Patrick Fiorenza publications per year

The chart shows the history of publications by Patrick Fiorenza between 2005 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Patrick Fiorenza published across 21 years, from 2005 to 2025, averaging 10.5 papers a year. Output peaked at 18 publications in 2022. 26 of the 221 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 2005 to 2025. Vertical axis: number of publications, 0 to 18. Peak 18 publications in 2022. 2005: 5 publications 2006: 7 publications 2007: 13 publications 2008: 6 publications 2009: 7 publications 2010: 7 publications 2011: 10 publications 2012: 8 publications 2013: 15 publications 2014: 13 publications 2015: 8 publications 2016: 16 publications 2017: 13 publications 2018: 8 publications 2019: 11 publications 2020: 9 publications 2021: 10 publications 2022: 18 publications 2023: 11 publications 2024: 15 publications 2025: 11 publications
2005 2025

221 publications in total across all disciplines

View publications per year as a table
Patrick Fiorenza: publications per year, 2005 to 2025
Year Publications
2005 5
2006 7
2007 13
2008 6
2009 7
2010 7
2011 10
2012 8
2013 15
2014 13
2015 8
2016 16
2017 13
2018 8
2019 11
2020 9
2021 10
2022 18
2023 11
2024 15
2025 11
Total 221
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Patrick Fiorenza publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Patrick Fiorenza sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 194–213 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 201 publications — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430 201
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Patrick Fiorenza D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Patrick Fiorenza sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 33 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262 33
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Best Publications

  • Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

    Fabrizio Roccaforte;Patrick Fiorenza;Giuseppe Greco;Raffaella Lo Nigro

  • An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.

    Fabrizio Roccaforte;Giuseppe Greco;Patrick Fiorenza;Ferdinando Iucolano

  • Recent advances on dielectrics technology for SiC and GaN power devices

    F. Roccaforte;P. Fiorenza;G. Greco;M. Vivona

  • Challenges for energy efficient wide band gap semiconductor power devices

    Fabrizio Roccaforte;Patrick Fiorenza;Giuseppe Greco;Raffaella Lo Nigro

  • Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

    Patrick Fiorenza;Filippo Giannazzo;Fabrizio Roccaforte

  • SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

    P. Fiorenza;F. Giannazzo;M. Vivona;A. La Magna

  • Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

    A. Frazzetto;F. Giannazzo;P. Fiorenza;V. Raineri

  • Localized electrical characterization of the giant permittivity effect in CaCu3Ti4O12 ceramics

    Patrick Fiorenza;Raffaella Lo Nigro;Corrado Bongiorno;Vito Raineri

  • Selective Doping in Silicon Carbide Power Devices.

    Fabrizio Roccaforte;Patrick Fiorenza;Marilena Vivona;Giuseppe Greco

  • Critical issues for interfaces to p-type SiC and GaN in power devices

    F. Roccaforte;A. Frazzetto;G. Greco;F. Giannazzo

  • Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

    Patrick Fiorenza;Alessia Frazzetto;Alfio Guarnera;Mario Saggio

  • Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3

    L. K. Swanson;P. Fiorenza;F. Giannazzo;A. Frazzetto

  • Conductive atomic force microscopy studies of thin SiO2 layer degradation

    Patrick Fiorenza;Wouter Polspoel;Wilfried Vandervorst

  • Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

    Gabriele Fisichella;Emanuela Schilirò;Salvatore Di Franco;Patrick Fiorenza

  • Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

    Fabrizio Roccaforte;Giuseppe Greco;Patrick Fiorenza;Vito Raineri

  • Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

    Emanuela Schilirò;Raffaella Lo Nigro;Patrick Fiorenza;Fabrizio Roccaforte

  • Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

    Fan Li;Fabrizio Roccaforte;Giuseppe Greco;Patrick Fiorenza

  • Channel Mobility in GaN Hybrid MOS-HEMT Using SiO 2 as Gate Insulator

    Patrick Fiorenza;Giuseppe Greco;Ferdinando Iucolano;Alfonso Patti

  • Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

    Patrick Fiorenza;Marilena Vivona;Ferdinando Iucolano;Andrea Severino

  • Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N 2 O and POCl 3

    P. Fiorenza;L. K. Swanson;M. Vivona;F. Giannazzo

Frequent Co-Authors

Fabrizio Roccaforte
Fabrizio Roccaforte National Research Council (CNR)
Filippo Giannazzo
Filippo Giannazzo National Research Council (CNR)
Vito Raineri
Vito Raineri National Research Council (CNR)
Corrado Bongiorno
Corrado Bongiorno National Academies of Sciences, Engineering, and Medicine
Ignazio L. Fragalà
Ignazio L. Fragalà University of Catania
Derek C. Sinclair
Derek C. Sinclair University of Sheffield
Rositsa Yakimova
Rositsa Yakimova Linköping University
Ivan Gueorguiev Ivanov
Ivan Gueorguiev Ivanov Linköping University
Anthony R. West
Anthony R. West University of Sheffield
Peter Lunkenheimer
Peter Lunkenheimer University of Augsburg

External Links

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Related Online Degrees & Career Pathways

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Many engineering graduates find that earning a bachelor degree in project management enhances their ability to oversee complex technical projects, making them more marketable in industries focused on innovation and infrastructure.

Additionally, online learning provides flexibility for various learners, especially working professionals. Those interested in advancing their career without pausing their job can benefit from online degree programs for working adults, which accommodate busy schedules and offer accelerated pathways.

Introverted individuals in technical fields may also find success by aligning their skills with high paying jobs for introverts, where focused work and independent problem-solving are prized. Combining technical knowledge with strategic project management can lead to rewarding roles that fit diverse personality types.

Best Scientists Citing Patrick Fiorenza

Fabrizio Roccaforte

Fabrizio Roccaforte

National Research Council (CNR)

Publications: 53

Filippo Giannazzo

Filippo Giannazzo

National Research Council (CNR)

Publications: 52

Montserrat Nafría

Montserrat Nafría

Autonomous University of Barcelona

Publications: 22

Corrado Bongiorno

Corrado Bongiorno

National Academies of Sciences, Engineering, and Medicine

Publications: 21

Mario Lanza

Mario Lanza

National University of Singapore

Publications: 17

Zupei Yang

Zupei Yang

Shaanxi Normal University

Publications: 13

Rositsa Yakimova

Rositsa Yakimova

Linköping University

Publications: 11

Zainal Arifin Ahmad

Zainal Arifin Ahmad

Universiti Sains Malaysia

Publications: 11

Yue Hao

Yue Hao

Xidian University

Publications: 10

Hongyu Yu

Hongyu Yu

Southern University of Science and Technology

Publications: 10

Katsuaki Suganuma

Katsuaki Suganuma

Osaka University

Publications: 10

Leonard C. Feldman

Leonard C. Feldman

Rutgers, The State University of New Jersey

Publications: 9

Shijo Nagao

Shijo Nagao

Osaka University

Publications: 9

Derek C. Sinclair

Derek C. Sinclair

University of Sheffield

Publications: 7

Wilfried Vandervorst

Wilfried Vandervorst

Imec

Publications: 6

Ivan Gueorguiev Ivanov

Ivan Gueorguiev Ivanov

Linköping University

Publications: 6

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