Patrick Fiorenza

Best Publications

• Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

  Fabrizio Roccaforte;Patrick Fiorenza;Giuseppe Greco;Raffaella Lo Nigro

  556
  Citations

• An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.

  Fabrizio Roccaforte;Giuseppe Greco;Patrick Fiorenza;Ferdinando Iucolano

  279
  Citations

• Recent advances on dielectrics technology for SiC and GaN power devices

  F. Roccaforte;P. Fiorenza;G. Greco;M. Vivona

  188
  Citations

• Challenges for energy efficient wide band gap semiconductor power devices

  Fabrizio Roccaforte;Patrick Fiorenza;Giuseppe Greco;Raffaella Lo Nigro

  145
  Citations

• Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

  Patrick Fiorenza;Filippo Giannazzo;Fabrizio Roccaforte

  120
  Citations

• SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

  P. Fiorenza;F. Giannazzo;M. Vivona;A. La Magna

  101
  Citations

• Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

  A. Frazzetto;F. Giannazzo;P. Fiorenza;V. Raineri

  79
  Citations

• Localized electrical characterization of the giant permittivity effect in CaCu3Ti4O12 ceramics

  Patrick Fiorenza;Raffaella Lo Nigro;Corrado Bongiorno;Vito Raineri

  77
  Citations

• Selective Doping in Silicon Carbide Power Devices.

  Fabrizio Roccaforte;Patrick Fiorenza;Marilena Vivona;Giuseppe Greco

  75
  Citations

• Critical issues for interfaces to p-type SiC and GaN in power devices

  F. Roccaforte;A. Frazzetto;G. Greco;F. Giannazzo

  73
  Citations

• Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

  Patrick Fiorenza;Alessia Frazzetto;Alfio Guarnera;Mario Saggio

  70
  Citations

• Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3

  L. K. Swanson;P. Fiorenza;F. Giannazzo;A. Frazzetto

  69
  Citations

• Conductive atomic force microscopy studies of thin SiO2 layer degradation

  Patrick Fiorenza;Wouter Polspoel;Wilfried Vandervorst

  62
  Citations

• Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

  Gabriele Fisichella;Emanuela Schilirò;Salvatore Di Franco;Patrick Fiorenza

  51
  Citations

• Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

  Fabrizio Roccaforte;Giuseppe Greco;Patrick Fiorenza;Vito Raineri

  47
  Citations

• Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

  Emanuela Schilirò;Raffaella Lo Nigro;Patrick Fiorenza;Fabrizio Roccaforte

  47
  Citations

• Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

  Fan Li;Fabrizio Roccaforte;Giuseppe Greco;Patrick Fiorenza

  44
  Citations

• Channel Mobility in GaN Hybrid MOS-HEMT Using SiO 2 as Gate Insulator

  Patrick Fiorenza;Giuseppe Greco;Ferdinando Iucolano;Alfonso Patti

  42
  Citations

• Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

  Patrick Fiorenza;Marilena Vivona;Ferdinando Iucolano;Andrea Severino

  41
  Citations

• Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N 2 O and POCl 3

  P. Fiorenza;L. K. Swanson;M. Vivona;F. Giannazzo

  39
  Citations