Vito Raineri

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name Citations Publications World Ranking National Ranking

Materials Science D-index 46 Citations 7,314 342 World Ranking 8265 National Ranking 159

Overview

What are the main themes of his work throughout his whole career to date

Vito Raineri works mostly in the field of Insect bites and stings, limiting it down to concerns involving Dermatology and, occasionally, INSECT BITES. His study connects Dermatology and INSECT BITES. His Silicon study combines Silicide and Dangling bond studies. His Composite material investigation overlaps with other areas such as Aluminium and Void (composites). He incorporates Aluminium and Silicon in his research. Vito Raineri combines topics linked to Silicide with his work on Optoelectronics. His research on Doping often connects related topics like Spreading resistance profiling. Vito Raineri incorporates Spreading resistance profiling and Semiconductor in his research. In his papers, Vito Raineri integrates diverse fields, such as Semiconductor and Dopant.

Vito Raineri most often published in these fields:

Optoelectronics (85.71%)
Doping (57.14%)
Silicon (57.14%)

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Richardson’s constant in inhomogeneous silicon carbide Schottky contacts

Fabrizio Roccaforte;Francesco La Via;Vito Raineri;Roberto Pierobon.
Journal of Applied Physics (2003)

269 Citations

Ion irradiation and defect formation in single layer graphene

Giuseppe Compagnini;Filippo Giannazzo;Sushant Sonde;Vito Raineri.
Carbon (2009)

252 Citations

Gettering of metals by voids in silicon

V. Raineri;P. G. Fallica;G. Percolla;A. Battaglia.
Journal of Applied Physics (1995)

242 Citations

Barrier inhomogeneity and electrical properties of Pt∕GaN Schottky contacts

Ferdinando Iucolano;Fabrizio Roccaforte;Filippo Giannazzo;Vito Raineri.
Journal of Applied Physics (2007)

207 Citations

Voids in Silicon by He Implantation: From Basic to Applications

V. Raineri;M. Saggio;E. Rimini.
Journal of Materials Research (2000)

188 Citations

Structural and electrical characterisation of Titanium and Nickel silicide contacts on Silicon carbide

F. La Via;F. Roccaforte;A. Makhtari;V. Raineri.
Microelectronic Engineering (2002)

168 Citations

Screening Length and Quantum Capacitance in Graphene by Scanning Probe Microscopy

F. Giannazzo;S. Sonde;V. Raineri;E. Rimini.
Nano Letters (2009)

132 Citations

He-vacancy interactions in Si and their influence on bubble formation and evolution

V. Raineri;S. Coffa;E. Szilágyi;J. Gyulai.
Physical Review B (2000)

126 Citations

Anchoring Molecular Magnets on the Si(100) Surface

Guglielmo G. Condorelli;Alessandro Motta;Ignazio L. Fragalà;Filippo Giannazzo.
Angewandte Chemie (2004)

120 Citations

Innovative localized lifetime control in high-speed IGBTs

M. Saggio;V. Raineri;R. Letor;F. Frisina.
IEEE Electron Device Letters (1997)

116 Citations

If you think any of the details on this page are incorrect, let us know.

Frequent Co-Authors

External Links

Personal Website for Vito Raineri