Vito Raineri

Vito Raineri publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Vito Raineri sits on this spectrum.

Vito Raineri D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Vito Raineri sits on this spectrum.

Overview

Best Publications

• Richardson’s constant in inhomogeneous silicon carbide Schottky contacts

  Fabrizio Roccaforte;Francesco La Via;Vito Raineri;Roberto Pierobon

  295
  Citations

• Ion irradiation and defect formation in single layer graphene

  Giuseppe Compagnini;Filippo Giannazzo;Sushant Sonde;Vito Raineri

  281
  Citations

• Gettering of metals by voids in silicon

  V. Raineri;P. G. Fallica;G. Percolla;A. Battaglia

  252
  Citations

• Barrier inhomogeneity and electrical properties of Pt∕GaN Schottky contacts

  Ferdinando Iucolano;Fabrizio Roccaforte;Filippo Giannazzo;Vito Raineri

  232
  Citations

• Voids in Silicon by He Implantation: From Basic to Applications

  V. Raineri;M. Saggio;E. Rimini

  198
  Citations

• Structural and electrical characterisation of Titanium and Nickel silicide contacts on Silicon carbide

  F. La Via;F. Roccaforte;A. Makhtari;V. Raineri

  173
  Citations

• Screening Length and Quantum Capacitance in Graphene by Scanning Probe Microscopy

  F. Giannazzo;S. Sonde;V. Raineri;E. Rimini

  137
  Citations

• He-vacancy interactions in Si and their influence on bubble formation and evolution

  V. Raineri;S. Coffa;E. Szilágyi;J. Gyulai

  134
  Citations

• Surface and interface issues in wide band gap semiconductor electronics

  F. Roccaforte;F. Giannazzo;F. Iucolano;J. Eriksson

  130
  Citations

• Temperature dependence of the specific resistance in Ti∕Al∕Ni∕Au contacts on n-type GaN

  F. Iucolano;F. Roccaforte;A. Alberti;C. Bongiorno

  129
  Citations

• Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene

  Filippo Giannazzo;Sushant Sonde;Raffaella Lo Nigro;Emanuele Rimini

  124
  Citations

• Anchoring Molecular Magnets on the Si(100) Surface

  Guglielmo G. Condorelli;Alessandro Motta;Ignazio L. Fragalà;Filippo Giannazzo

  123
  Citations

• Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy

  S. Sonde;F. Giannazzo;V. Raineri;R. Yakimova

  120
  Citations

• Innovative localized lifetime control in high-speed IGBTs

  M. Saggio;V. Raineri;R. Letor;F. Frisina

  119
  Citations

• OHMIC CONTACTS TO SIC

  Fabrizio Roccaforte;Francesco La Via;Vito Raineri

  114
  Citations

• Mechanisms of amorphization in ion implanted crystalline silicon

  S.U. Campisano;S. Coffa;V. Raineri;F. Priolo

  111
  Citations

• High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect

  Antonella Sciuto;Fabrizio Roccaforte;Salvatore Di Franco;Vito Raineri

  108
  Citations

• Structural and electrical properties of Ni∕Ti Schottky contacts on silicon carbide upon thermal annealing

  F. Roccaforte;F. La Via;A. Baeri;V. Raineri

  104
  Citations

• Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height

  F. Roccaforte;F. La Via;V. Raineri;P. Musumeci

  102
  Citations

• Nanoscale carrier transport in Ti /Al/Ni/Au Ohmic contacts on AlGaN epilayers grown on Si(111)

  F. Roccaforte;F. Iucolano;F. Giannazzo;A. Alberti

  101
  Citations