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52
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11020
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9498
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Overview

Fabrizio Roccaforte is affiliated with the National Research Council (CNR) in Italy, where their research primarily focuses on semiconductor materials and devices. Their work encompasses various aspects of silicon carbide semiconductor technologies as well as GaN-based semiconductor devices and materials.

The researcher has contributed extensively to fields including engineering, materials science, and physics and astronomy. More specifically, these efforts are concentrated in subfields such as electrical and electronic engineering, materials chemistry, atomic and molecular physics and optics, condensed matter physics, and electronic, optical, and magnetic materials.

The main research topics covered include semiconductor materials and interfaces, 2D materials and applications, MXene and MAX Phase materials, and graphene research and applications.

Fabrizio Roccaforte has published papers in several frequent venues, including:

  • Materials
  • Applied Surface Science
  • Materials Science Forum
  • SSRN Electronic Journal
  • Nanomaterials

Among recent papers authored or co-authored by them are:

  • Selective Doping in Silicon Carbide Power Devices, 2021, Materials
  • Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices, 2022, Micro
  • Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate, 2021, ACS Applied Materials & Interfaces (first author: Salvatore Ethan Panasci)
  • Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures, 2020, Nanomaterials (first author: Filippo Giannazzo)
  • Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC, 2020, Applied Physics Reviews (first author: Giuseppe Fisicaro)

Frequent co-authors working with Fabrizio Roccaforte include:

  • Filippo Giannazzo
  • Patrick Fiorenza
  • Giuseppe Greco
  • Emanuela Schilirò
  • Salvatore Ethan Panasci

Best Publications

  • Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

    Fabrizio Roccaforte;Patrick Fiorenza;Giuseppe Greco;Raffaella Lo Nigro

  • Ohmic contacts to Gallium Nitride materials

    Giuseppe Greco;Ferdinando Iucolano;Fabrizio Roccaforte

  • Richardson’s constant in inhomogeneous silicon carbide Schottky contacts

    Fabrizio Roccaforte;Francesco La Via;Vito Raineri;Roberto Pierobon

  • Review of technology for normally-off HEMTs with p-GaN gate

    Giuseppe Greco;Ferdinando Iucolano;Fabrizio Roccaforte

  • An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.

    Fabrizio Roccaforte;Giuseppe Greco;Patrick Fiorenza;Ferdinando Iucolano

  • Barrier inhomogeneity and electrical properties of Pt∕GaN Schottky contacts

    Ferdinando Iucolano;Fabrizio Roccaforte;Filippo Giannazzo;Vito Raineri

  • Recent advances on dielectrics technology for SiC and GaN power devices

    F. Roccaforte;P. Fiorenza;G. Greco;M. Vivona

  • Structural and electrical characterisation of Titanium and Nickel silicide contacts on Silicon carbide

    F. La Via;F. Roccaforte;A. Makhtari;V. Raineri

  • Challenges for energy efficient wide band gap semiconductor power devices

    Fabrizio Roccaforte;Patrick Fiorenza;Giuseppe Greco;Raffaella Lo Nigro

  • Surface and interface issues in wide band gap semiconductor electronics

    F. Roccaforte;F. Giannazzo;F. Iucolano;J. Eriksson

  • Temperature dependence of the specific resistance in Ti∕Al∕Ni∕Au contacts on n-type GaN

    F. Iucolano;F. Roccaforte;A. Alberti;C. Bongiorno

  • Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

    Patrick Fiorenza;Filippo Giannazzo;Fabrizio Roccaforte

  • OHMIC CONTACTS TO SIC

    Fabrizio Roccaforte;Francesco La Via;Vito Raineri

  • Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC

    F Giannazzo;I Deretzis;A La Magna;F Roccaforte

  • Strain, Doping, and Electronic Transport of Large Area Monolayer MoS 2 Exfoliated on Gold and Transferred to an Insulating Substrate

    Salvatore Ethan Panasci;Emanuela Schilirò;Giuseppe Greco;Marco Cannas

  • High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect

    Antonella Sciuto;Fabrizio Roccaforte;Salvatore Di Franco;Vito Raineri

  • Structural and electrical properties of Ni∕Ti Schottky contacts on silicon carbide upon thermal annealing

    F. Roccaforte;F. La Via;A. Baeri;V. Raineri

  • Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height

    F. Roccaforte;F. La Via;V. Raineri;P. Musumeci

  • Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization

    Filippo Giannazzo;Gabriele Fisichella;Giuseppe Greco;Salvatore Di Franco

  • SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

    P. Fiorenza;F. Giannazzo;M. Vivona;A. La Magna

  • Nanoscale carrier transport in Ti /Al/Ni/Au Ohmic contacts on AlGaN epilayers grown on Si(111)

    F. Roccaforte;F. Iucolano;F. Giannazzo;A. Alberti

  • Temperature behavior of inhomogeneous Pt/GaN Schottky contacts

    Ferdinando Iucolano;Fabrizio Roccaforte;Filippo Giannazzo;Vito Raineri

  • Self-organization of gold nanoclusters on hexagonal SiC and SiO2 surfaces

    F. Ruffino;A. Canino;M. G. Grimaldi;F. Giannazzo

Frequent Co-Authors

Filippo Giannazzo
Filippo Giannazzo National Research Council (CNR)
Vito Raineri
Vito Raineri National Research Council (CNR)
Patrick Fiorenza
Patrick Fiorenza National Research Council (CNR)
Corrado Bongiorno
Corrado Bongiorno National Academies of Sciences, Engineering, and Medicine
Rositsa Yakimova
Rositsa Yakimova Linköping University
Mathias Schubert
Mathias Schubert University of Nebraska–Lincoln
Juhani Keinonen
Juhani Keinonen University of Helsinki
Carsten Ronning
Carsten Ronning Friedrich Schiller University Jena
Mario Lanza
Mario Lanza National University of Singapore

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