His primary areas of investigation include Wide-bandgap semiconductor, Schottky barrier, Annealing, Schottky diode and Optoelectronics. His Wide-bandgap semiconductor research incorporates themes from Silicon carbide and Electrical resistivity and conductivity. The Schottky barrier study combines topics in areas such as Conductive atomic force microscopy, Scanning transmission electron microscopy, Condensed matter physics, Molybdenum disulfide and Titanium.
Fabrizio Roccaforte combines subjects such as Nickel, Ohmic contact, Metal, Analytical chemistry and Composite material with his study of Annealing. His Schottky diode research is multidisciplinary, relying on both Silicide and Photodiode, Optics. His work deals with themes such as Electrical conductor and MOSFET, which intersect with Optoelectronics.
His primary areas of study are Optoelectronics, Annealing, Schottky diode, Schottky barrier and Analytical chemistry. His Optoelectronics research includes elements of Nanoscopic scale and Conductive atomic force microscopy. Fabrizio Roccaforte has researched Annealing in several fields, including Oxide, Capacitor, Ohmic contact, Transmission electron microscopy and Composite material.
His biological study spans a wide range of topics, including Photodiode, Electronic engineering, Silicon carbide and Silicide. His Schottky barrier study combines topics from a wide range of disciplines, such as Titanium, Condensed matter physics, Electrical resistivity and conductivity and Metal. His work carried out in the field of Analytical chemistry brings together such families of science as Doping, Epitaxy, Amorphous solid, Thin film and Ion implantation.
His scientific interests lie mostly in Optoelectronics, Conductive atomic force microscopy, Annealing, Schottky diode and Oxide. His studies in Optoelectronics integrate themes in fields like Nanoscopic scale, High-electron-mobility transistor, Thin film, Atomic layer deposition and MOSFET. His Conductive atomic force microscopy research integrates issues from Monolayer, Cubic silicon carbide, Chemical vapor deposition and Heterojunction.
The various areas that Fabrizio Roccaforte examines in his Annealing study include Acceptor, Ohmic contact, Analytical chemistry, Thermionic field emission and Contact resistance. His Schottky diode research includes elements of Schottky barrier and Leakage. His biological study spans a wide range of topics, including Condensed matter physics and Tungsten carbide.
The scientist’s investigation covers issues in Optoelectronics, Graphene, Conductive atomic force microscopy, Atomic layer deposition and Heterojunction. His work deals with themes such as Field-effect transistor and Substrate, which intersect with Optoelectronics. His studies deal with areas such as Cubic silicon carbide and Contact resistance as well as Conductive atomic force microscopy.
His Semiconductor research also works with subjects such as
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Richardson’s constant in inhomogeneous silicon carbide Schottky contacts
Fabrizio Roccaforte;Francesco La Via;Vito Raineri;Roberto Pierobon.
Journal of Applied Physics (2003)
Barrier inhomogeneity and electrical properties of Pt∕GaN Schottky contacts
Ferdinando Iucolano;Fabrizio Roccaforte;Filippo Giannazzo;Vito Raineri.
Journal of Applied Physics (2007)
Ohmic contacts to Gallium Nitride materials
Giuseppe Greco;Ferdinando Iucolano;Fabrizio Roccaforte.
Applied Surface Science (2016)
Structural and electrical characterisation of Titanium and Nickel silicide contacts on Silicon carbide
F. La Via;F. Roccaforte;A. Makhtari;V. Raineri.
Microelectronic Engineering (2002)
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Fabrizio Roccaforte;Patrick Fiorenza;Giuseppe Greco;Raffaella Lo Nigro.
Microelectronic Engineering (2018)
Recent advances on dielectrics technology for SiC and GaN power devices
F. Roccaforte;P. Fiorenza;G. Greco;M. Vivona.
Applied Surface Science (2014)
Temperature dependence of the specific resistance in Ti∕Al∕Ni∕Au contacts on n-type GaN
F. Iucolano;F. Roccaforte;A. Alberti;C. Bongiorno.
Journal of Applied Physics (2006)
High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect
Antonella Sciuto;Fabrizio Roccaforte;Salvatore Di Franco;Vito Raineri.
Applied Physics Letters (2006)
Self-organization of gold nanoclusters on hexagonal SiC and SiO2 surfaces
F. Ruffino;A. Canino;M. G. Grimaldi;F. Giannazzo.
Journal of Applied Physics (2007)
Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height
F. Roccaforte;F. La Via;V. Raineri;P. Musumeci.
Applied Physics A (2003)
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