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Materials Science

D-Index
52
Citations
11020
World Ranking
9496
National Ranking
183

Fabrizio Roccaforte publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Fabrizio Roccaforte sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 407 publications — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Fabrizio Roccaforte D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Fabrizio Roccaforte sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 52 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Fabrizio Roccaforte is affiliated with the National Research Council (CNR) in Italy, where their research primarily focuses on semiconductor materials and devices. Their work encompasses various aspects of silicon carbide semiconductor technologies as well as GaN-based semiconductor devices and materials.

The researcher has contributed extensively to fields including engineering, materials science, and physics and astronomy. More specifically, these efforts are concentrated in subfields such as electrical and electronic engineering, materials chemistry, atomic and molecular physics and optics, condensed matter physics, and electronic, optical, and magnetic materials.

The main research topics covered include semiconductor materials and interfaces, 2D materials and applications, MXene and MAX Phase materials, and graphene research and applications.

Fabrizio Roccaforte has published papers in several frequent venues, including:

  • Materials
  • Applied Surface Science
  • Materials Science Forum
  • SSRN Electronic Journal
  • Nanomaterials

Among recent papers authored or co-authored by them are:

  • Selective Doping in Silicon Carbide Power Devices, 2021, Materials
  • Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices, 2022, Micro
  • Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate, 2021, ACS Applied Materials & Interfaces (first author: Salvatore Ethan Panasci)
  • Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures, 2020, Nanomaterials (first author: Filippo Giannazzo)
  • Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC, 2020, Applied Physics Reviews (first author: Giuseppe Fisicaro)

Frequent co-authors working with Fabrizio Roccaforte include:

  • Filippo Giannazzo
  • Patrick Fiorenza
  • Giuseppe Greco
  • Emanuela Schilirò
  • Salvatore Ethan Panasci

Best Publications

  • Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

    Fabrizio Roccaforte;Patrick Fiorenza;Giuseppe Greco;Raffaella Lo Nigro

  • Ohmic contacts to Gallium Nitride materials

    Giuseppe Greco;Ferdinando Iucolano;Fabrizio Roccaforte

  • Richardson’s constant in inhomogeneous silicon carbide Schottky contacts

    Fabrizio Roccaforte;Francesco La Via;Vito Raineri;Roberto Pierobon

  • Review of technology for normally-off HEMTs with p-GaN gate

    Giuseppe Greco;Ferdinando Iucolano;Fabrizio Roccaforte

  • An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.

    Fabrizio Roccaforte;Giuseppe Greco;Patrick Fiorenza;Ferdinando Iucolano

  • Barrier inhomogeneity and electrical properties of Pt∕GaN Schottky contacts

    Ferdinando Iucolano;Fabrizio Roccaforte;Filippo Giannazzo;Vito Raineri

  • Recent advances on dielectrics technology for SiC and GaN power devices

    F. Roccaforte;P. Fiorenza;G. Greco;M. Vivona

  • Structural and electrical characterisation of Titanium and Nickel silicide contacts on Silicon carbide

    F. La Via;F. Roccaforte;A. Makhtari;V. Raineri

  • Challenges for energy efficient wide band gap semiconductor power devices

    Fabrizio Roccaforte;Patrick Fiorenza;Giuseppe Greco;Raffaella Lo Nigro

  • Surface and interface issues in wide band gap semiconductor electronics

    F. Roccaforte;F. Giannazzo;F. Iucolano;J. Eriksson

  • Temperature dependence of the specific resistance in Ti∕Al∕Ni∕Au contacts on n-type GaN

    F. Iucolano;F. Roccaforte;A. Alberti;C. Bongiorno

  • Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

    Patrick Fiorenza;Filippo Giannazzo;Fabrizio Roccaforte

  • OHMIC CONTACTS TO SIC

    Fabrizio Roccaforte;Francesco La Via;Vito Raineri

  • Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC

    F Giannazzo;I Deretzis;A La Magna;F Roccaforte

  • Strain, Doping, and Electronic Transport of Large Area Monolayer MoS 2 Exfoliated on Gold and Transferred to an Insulating Substrate

    Salvatore Ethan Panasci;Emanuela Schilirò;Giuseppe Greco;Marco Cannas

  • High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect

    Antonella Sciuto;Fabrizio Roccaforte;Salvatore Di Franco;Vito Raineri

  • Structural and electrical properties of Ni∕Ti Schottky contacts on silicon carbide upon thermal annealing

    F. Roccaforte;F. La Via;A. Baeri;V. Raineri

  • Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height

    F. Roccaforte;F. La Via;V. Raineri;P. Musumeci

  • Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization

    Filippo Giannazzo;Gabriele Fisichella;Giuseppe Greco;Salvatore Di Franco

  • SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

    P. Fiorenza;F. Giannazzo;M. Vivona;A. La Magna

  • Nanoscale carrier transport in Ti /Al/Ni/Au Ohmic contacts on AlGaN epilayers grown on Si(111)

    F. Roccaforte;F. Iucolano;F. Giannazzo;A. Alberti

  • Temperature behavior of inhomogeneous Pt/GaN Schottky contacts

    Ferdinando Iucolano;Fabrizio Roccaforte;Filippo Giannazzo;Vito Raineri

  • Self-organization of gold nanoclusters on hexagonal SiC and SiO2 surfaces

    F. Ruffino;A. Canino;M. G. Grimaldi;F. Giannazzo

Frequent Co-Authors

Filippo Giannazzo
Filippo Giannazzo National Research Council (CNR)
Vito Raineri
Vito Raineri National Research Council (CNR)
Patrick Fiorenza
Patrick Fiorenza National Research Council (CNR)
Corrado Bongiorno
Corrado Bongiorno National Academies of Sciences, Engineering, and Medicine
Rositsa Yakimova
Rositsa Yakimova Linköping University
Mathias Schubert
Mathias Schubert University of Nebraska–Lincoln
Juhani Keinonen
Juhani Keinonen University of Helsinki
Carsten Ronning
Carsten Ronning Friedrich Schiller University Jena
Mario Lanza
Mario Lanza National University of Singapore

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