H-Index & Metrics Best Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Materials Science D-index 47 Citations 6,656 294 World Ranking 6565 National Ranking 101

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Silicon
  • Oxygen

His primary areas of investigation include Wide-bandgap semiconductor, Schottky barrier, Annealing, Schottky diode and Optoelectronics. His Wide-bandgap semiconductor research incorporates themes from Silicon carbide and Electrical resistivity and conductivity. The Schottky barrier study combines topics in areas such as Conductive atomic force microscopy, Scanning transmission electron microscopy, Condensed matter physics, Molybdenum disulfide and Titanium.

Fabrizio Roccaforte combines subjects such as Nickel, Ohmic contact, Metal, Analytical chemistry and Composite material with his study of Annealing. His Schottky diode research is multidisciplinary, relying on both Silicide and Photodiode, Optics. His work deals with themes such as Electrical conductor and MOSFET, which intersect with Optoelectronics.

His most cited work include:

  • Richardson’s constant in inhomogeneous silicon carbide Schottky contacts (197 citations)
  • Barrier inhomogeneity and electrical properties of Pt∕GaN Schottky contacts (131 citations)
  • Structural and electrical characterisation of Titanium and Nickel silicide contacts on Silicon carbide (125 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Optoelectronics, Annealing, Schottky diode, Schottky barrier and Analytical chemistry. His Optoelectronics research includes elements of Nanoscopic scale and Conductive atomic force microscopy. Fabrizio Roccaforte has researched Annealing in several fields, including Oxide, Capacitor, Ohmic contact, Transmission electron microscopy and Composite material.

His biological study spans a wide range of topics, including Photodiode, Electronic engineering, Silicon carbide and Silicide. His Schottky barrier study combines topics from a wide range of disciplines, such as Titanium, Condensed matter physics, Electrical resistivity and conductivity and Metal. His work carried out in the field of Analytical chemistry brings together such families of science as Doping, Epitaxy, Amorphous solid, Thin film and Ion implantation.

He most often published in these fields:

  • Optoelectronics (45.91%)
  • Annealing (31.58%)
  • Schottky diode (27.19%)

What were the highlights of his more recent work (between 2018-2021)?

  • Optoelectronics (45.91%)
  • Conductive atomic force microscopy (17.84%)
  • Annealing (31.58%)

In recent papers he was focusing on the following fields of study:

His scientific interests lie mostly in Optoelectronics, Conductive atomic force microscopy, Annealing, Schottky diode and Oxide. His studies in Optoelectronics integrate themes in fields like Nanoscopic scale, High-electron-mobility transistor, Thin film, Atomic layer deposition and MOSFET. His Conductive atomic force microscopy research integrates issues from Monolayer, Cubic silicon carbide, Chemical vapor deposition and Heterojunction.

The various areas that Fabrizio Roccaforte examines in his Annealing study include Acceptor, Ohmic contact, Analytical chemistry, Thermionic field emission and Contact resistance. His Schottky diode research includes elements of Schottky barrier and Leakage. His biological study spans a wide range of topics, including Condensed matter physics and Tungsten carbide.

Between 2018 and 2021, his most popular works were:

  • An Overview of Normally-Off GaN-Based High Electron Mobility Transistors. (47 citations)
  • Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review (30 citations)
  • High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors (14 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Silicon
  • Oxygen

The scientist’s investigation covers issues in Optoelectronics, Graphene, Conductive atomic force microscopy, Atomic layer deposition and Heterojunction. His work deals with themes such as Field-effect transistor and Substrate, which intersect with Optoelectronics. His studies deal with areas such as Cubic silicon carbide and Contact resistance as well as Conductive atomic force microscopy.

His Semiconductor research also works with subjects such as

  • High-electron-mobility transistor that intertwine with fields like Wide-bandgap semiconductor,
  • Ohmic contact and related Annealing. His Silicon research is multidisciplinary, incorporating perspectives in Schottky diode and Schottky barrier. His study in Schottky diode is interdisciplinary in nature, drawing from both Hot electron transistors and Condensed matter physics.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Richardson’s constant in inhomogeneous silicon carbide Schottky contacts

Fabrizio Roccaforte;Francesco La Via;Vito Raineri;Roberto Pierobon.
Journal of Applied Physics (2003)

254 Citations

Barrier inhomogeneity and electrical properties of Pt∕GaN Schottky contacts

Ferdinando Iucolano;Fabrizio Roccaforte;Filippo Giannazzo;Vito Raineri.
Journal of Applied Physics (2007)

200 Citations

Ohmic contacts to Gallium Nitride materials

Giuseppe Greco;Ferdinando Iucolano;Fabrizio Roccaforte.
Applied Surface Science (2016)

168 Citations

Structural and electrical characterisation of Titanium and Nickel silicide contacts on Silicon carbide

F. La Via;F. Roccaforte;A. Makhtari;V. Raineri.
Microelectronic Engineering (2002)

162 Citations

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Fabrizio Roccaforte;Patrick Fiorenza;Giuseppe Greco;Raffaella Lo Nigro.
Microelectronic Engineering (2018)

142 Citations

Recent advances on dielectrics technology for SiC and GaN power devices

F. Roccaforte;P. Fiorenza;G. Greco;M. Vivona.
Applied Surface Science (2014)

121 Citations

Temperature dependence of the specific resistance in Ti∕Al∕Ni∕Au contacts on n-type GaN

F. Iucolano;F. Roccaforte;A. Alberti;C. Bongiorno.
Journal of Applied Physics (2006)

110 Citations

High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect

Antonella Sciuto;Fabrizio Roccaforte;Salvatore Di Franco;Vito Raineri.
Applied Physics Letters (2006)

101 Citations

Self-organization of gold nanoclusters on hexagonal SiC and SiO2 surfaces

F. Ruffino;A. Canino;M. G. Grimaldi;F. Giannazzo.
Journal of Applied Physics (2007)

94 Citations

Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height

F. Roccaforte;F. La Via;V. Raineri;P. Musumeci.
Applied Physics A (2003)

94 Citations

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