His primary scientific interests are in Epitaxy, Optoelectronics, Chemical vapor deposition, Atomic physics and Silicon carbide. His research in Epitaxy intersects with topics in Crystallography, Substrate, Mineralogy and Doping. Erik Janzén focuses mostly in the field of Optoelectronics, narrowing it down to matters related to Stacking and, in some cases, Forward voltage.
The study incorporates disciplines such as Metalorganic vapour phase epitaxy, Nucleation, Thin film, Analytical chemistry and Chemical engineering in addition to Chemical vapor deposition. His studies deal with areas such as Center, Silicon, Electron and Vacancy defect as well as Atomic physics. Erik Janzén has researched Silicon carbide in several fields, including Surface finish and Spins.
Erik Janzén spends much of his time researching Optoelectronics, Epitaxy, Analytical chemistry, Photoluminescence and Doping. His study in Optoelectronics is interdisciplinary in nature, drawing from both Metalorganic vapour phase epitaxy and Substrate. His Epitaxy study combines topics from a wide range of disciplines, such as Crystallography, Chemical vapor deposition and Silicon carbide.
He combines subjects such as Chemical engineering and Mineralogy with his study of Chemical vapor deposition. His Analytical chemistry study also includes fields such as
Erik Janzén mostly deals with Optoelectronics, Epitaxy, Chemical vapor deposition, Nanotechnology and Analytical chemistry. His Optoelectronics study combines topics in areas such as Layer, Metalorganic vapour phase epitaxy and High-electron-mobility transistor. In his works, Erik Janzén undertakes multidisciplinary study on Epitaxy and Growth rate.
His Chemical vapor deposition study combines topics from a wide range of disciplines, such as Silicon carbide, Heterojunction, Carbon, Chemical engineering and Photoluminescence. His Silicon carbide research is multidisciplinary, relying on both Diamond, Silicon, Semiconductor and Spins, Condensed matter physics. His work deals with themes such as Thin film, Electron paramagnetic resonance, Doping and Sputter deposition, which intersect with Analytical chemistry.
The scientist’s investigation covers issues in Optoelectronics, Condensed matter physics, Analytical chemistry, Silicon carbide and Chemical vapor deposition. His Optoelectronics research is multidisciplinary, incorporating perspectives in Power semiconductor device, Nanotechnology, Vacancy defect and Photon. His study in Condensed matter physics is interdisciplinary in nature, drawing from both Coherence time, Coherence, Electron and Anisotropy.
His Analytical chemistry study integrates concerns from other disciplines, such as Doping, Thin film, Electron paramagnetic resonance, Atomic physics and Bilayer graphene. His research in Silicon carbide intersects with topics in Spins, Semiconductor, Silicon and Qubit. His studies deal with areas such as Metalorganic vapour phase epitaxy, Epitaxy, Inorganic chemistry, Heterojunction and Wide-bandgap semiconductor as well as Chemical vapor deposition.
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Coherent control of single spins in silicon carbide at room temperature
Matthias Widmann;Sang-Yun Lee;Torsten Rendler;Nguyen Tien Son.
arXiv: Mesoscale and Nanoscale Physics (2014)
Coherent control of single spins in silicon carbide at room temperature
Matthias Widmann;Sang-Yun Lee;Torsten Rendler;Nguyen Tien Son.
Nature Materials (2015)
Isolated electron spins in silicon carbide with millisecond coherence times
David J. Christle;Abram L. Falk;Paolo Andrich;Paolo Andrich;Paul V. Klimov;Paul V. Klimov.
Nature Materials (2015)
Deep level defects in electron-irradiated 4H SiC epitaxial layers
C. Hemmingsson;N. T. Son;O. Kordina;J. P. Bergman.
Journal of Applied Physics (1997)
Deep levels created by low energy electron irradiation in 4H-SiC
Liutauras Storasta;J.R. Bergman;Erik Janzén;Anne Henry.
Journal of Applied Physics (2004)
Silicon vacancy related defect in 4H and 6H SiC
E. Sörman;N. T. Son;W. M. Chen;O. Kordina.
Physical Review B (2000)
Negative-U System of Carbon Vacancy in 4H-SiC
NT Son;X T Trinh;Lars Sundnes Løvlie;Bengt Gunnar Svensson.
Physical Review Letters (2012)
Accurate defect levels obtained from the HSE06 range-separated hybrid functional
Peter Deák;Bálint Aradi;Thomas Frauenheim;Erik Janzén.
Physical Review B (2010)
High-resolution studies of sulfur- and selenium-related donor centers in silicon
E. Janzén;R. Stedman;G. Grossmann;H. G. Grimmeiss.
Physical Review B (1984)
Divacancy in 4H-SiC.
N. T. Son;P. Carlsson;J. ul Hassan;E. Janzén.
Physical Review Letters (2006)
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