D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 67 Citations 16,148 701 World Ranking 2939 National Ranking 33

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

His primary scientific interests are in Epitaxy, Optoelectronics, Chemical vapor deposition, Atomic physics and Silicon carbide. His research in Epitaxy intersects with topics in Crystallography, Substrate, Mineralogy and Doping. Erik Janzén focuses mostly in the field of Optoelectronics, narrowing it down to matters related to Stacking and, in some cases, Forward voltage.

The study incorporates disciplines such as Metalorganic vapour phase epitaxy, Nucleation, Thin film, Analytical chemistry and Chemical engineering in addition to Chemical vapor deposition. His studies deal with areas such as Center, Silicon, Electron and Vacancy defect as well as Atomic physics. Erik Janzén has researched Silicon carbide in several fields, including Surface finish and Spins.

His most cited work include:

  • Coherent control of single spins in silicon carbide at room temperature (366 citations)
  • Coherent control of single spins in silicon carbide at room temperature (281 citations)
  • Isolated electron spins in silicon carbide with millisecond coherence times (251 citations)

What are the main themes of his work throughout his whole career to date?

Erik Janzén spends much of his time researching Optoelectronics, Epitaxy, Analytical chemistry, Photoluminescence and Doping. His study in Optoelectronics is interdisciplinary in nature, drawing from both Metalorganic vapour phase epitaxy and Substrate. His Epitaxy study combines topics from a wide range of disciplines, such as Crystallography, Chemical vapor deposition and Silicon carbide.

He combines subjects such as Chemical engineering and Mineralogy with his study of Chemical vapor deposition. His Analytical chemistry study also includes fields such as

  • Electron and Vacancy defect most often made with reference to Annealing,
  • Electron paramagnetic resonance together with Crystallographic defect. His work in Photoluminescence addresses issues such as Atomic physics, which are connected to fields such as Silicon, Spectral line and Irradiation.

He most often published in these fields:

  • Optoelectronics (28.15%)
  • Epitaxy (26.94%)
  • Analytical chemistry (19.44%)

What were the highlights of his more recent work (between 2012-2020)?

  • Optoelectronics (28.15%)
  • Epitaxy (26.94%)
  • Chemical vapor deposition (15.68%)

In recent papers he was focusing on the following fields of study:

Erik Janzén mostly deals with Optoelectronics, Epitaxy, Chemical vapor deposition, Nanotechnology and Analytical chemistry. His Optoelectronics study combines topics in areas such as Layer, Metalorganic vapour phase epitaxy and High-electron-mobility transistor. In his works, Erik Janzén undertakes multidisciplinary study on Epitaxy and Growth rate.

His Chemical vapor deposition study combines topics from a wide range of disciplines, such as Silicon carbide, Heterojunction, Carbon, Chemical engineering and Photoluminescence. His Silicon carbide research is multidisciplinary, relying on both Diamond, Silicon, Semiconductor and Spins, Condensed matter physics. His work deals with themes such as Thin film, Electron paramagnetic resonance, Doping and Sputter deposition, which intersect with Analytical chemistry.

Between 2012 and 2020, his most popular works were:

  • Coherent control of single spins in silicon carbide at room temperature (366 citations)
  • Coherent control of single spins in silicon carbide at room temperature (281 citations)
  • Isolated electron spins in silicon carbide with millisecond coherence times (251 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

The scientist’s investigation covers issues in Optoelectronics, Condensed matter physics, Analytical chemistry, Silicon carbide and Chemical vapor deposition. His Optoelectronics research is multidisciplinary, incorporating perspectives in Power semiconductor device, Nanotechnology, Vacancy defect and Photon. His study in Condensed matter physics is interdisciplinary in nature, drawing from both Coherence time, Coherence, Electron and Anisotropy.

His Analytical chemistry study integrates concerns from other disciplines, such as Doping, Thin film, Electron paramagnetic resonance, Atomic physics and Bilayer graphene. His research in Silicon carbide intersects with topics in Spins, Semiconductor, Silicon and Qubit. His studies deal with areas such as Metalorganic vapour phase epitaxy, Epitaxy, Inorganic chemistry, Heterojunction and Wide-bandgap semiconductor as well as Chemical vapor deposition.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Coherent control of single spins in silicon carbide at room temperature

Matthias Widmann;Sang-Yun Lee;Torsten Rendler;Nguyen Tien Son.
arXiv: Mesoscale and Nanoscale Physics (2014)

510 Citations

Coherent control of single spins in silicon carbide at room temperature

Matthias Widmann;Sang-Yun Lee;Torsten Rendler;Nguyen Tien Son.
Nature Materials (2015)

509 Citations

Isolated electron spins in silicon carbide with millisecond coherence times

David J. Christle;Abram L. Falk;Paolo Andrich;Paolo Andrich;Paul V. Klimov;Paul V. Klimov.
Nature Materials (2015)

408 Citations

Deep level defects in electron-irradiated 4H SiC epitaxial layers

C. Hemmingsson;N. T. Son;O. Kordina;J. P. Bergman.
Journal of Applied Physics (1997)

388 Citations

Deep levels created by low energy electron irradiation in 4H-SiC

Liutauras Storasta;J.R. Bergman;Erik Janzén;Anne Henry.
Journal of Applied Physics (2004)

353 Citations

Silicon vacancy related defect in 4H and 6H SiC

E. Sörman;N. T. Son;W. M. Chen;O. Kordina.
Physical Review B (2000)

272 Citations

Negative-U System of Carbon Vacancy in 4H-SiC

NT Son;X T Trinh;Lars Sundnes Løvlie;Bengt Gunnar Svensson.
Physical Review Letters (2012)

270 Citations

Accurate defect levels obtained from the HSE06 range-separated hybrid functional

Peter Deák;Bálint Aradi;Thomas Frauenheim;Erik Janzén.
Physical Review B (2010)

255 Citations

High-resolution studies of sulfur- and selenium-related donor centers in silicon

E. Janzén;R. Stedman;G. Grossmann;H. G. Grimmeiss.
Physical Review B (1984)

252 Citations

Divacancy in 4H-SiC.

N. T. Son;P. Carlsson;J. ul Hassan;E. Janzén.
Physical Review Letters (2006)

236 Citations

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