2026 Erik Janzén: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	National Ranking	Publications	Citations
Materials Science	81	2602	22	761	22690

Erik Janzén publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Erik Janzén sits on this spectrum.

50 publications 1,163+

This scientist: 761 publications — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Erik Janzén D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Erik Janzén sits on this spectrum.

40 D-Index 165+

This scientist: 81 D-Index — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Erik Janzén is affiliated with Linköping University in Sweden. Their research primarily focuses on materials science and engineering, with significant attention to materials chemistry and electronic engineering subfields.

The main topics covered in their work include:

Diamond and Carbon-based Materials Research
Boron and Carbon Nanomaterials Research
Graphene research and applications
Advancements in Battery Materials
Graphene and Nanomaterials Applications
Semiconductor materials and devices
2D Materials and Applications

Frequent publication venues for Janzén's work are:

arXiv (Cornell University)
Proceedings of the National Academy of Sciences
Physical Review Letters
Physical review. B./Physical review. B
Physical Review X

Some of their recent papers include:

Unexpected catalytic activity of nanorippled graphene, 2023, Proceedings of the National Academy of Sciences
Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron Nitride, 2023, Physical Review Letters
Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride, 2024, Physical review. B./Physical review. B
Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride, 2023, PubMed
Isotope Substitution and Polytype Control for Point Defects Identification: The Case of the Ultraviolet Color Center in Hexagonal Boron Nitride, 2025, Physical Review X

Frequent collaborators in Janzén's research include:

James H. Edgar
Guillaume Cassabois
J. Fraunié
G. Seine
X. Marie

Best Publications

Coherent control of single spins in silicon carbide at room temperature

Matthias Widmann;Sang-Yun Lee;Torsten Rendler;Nguyen Tien Son

718
Citations
Coherent control of single spins in silicon carbide at room temperature

Matthias Widmann;Sang-Yun Lee;Torsten Rendler;Nguyen Tien Son

510
Citations
Accurate defect levels obtained from the HSE06 range-separated hybrid functional

Peter Deák;Bálint Aradi;Thomas Frauenheim;Erik Janzén

438
Citations
Deep level defects in electron-irradiated 4H SiC epitaxial layers

C. Hemmingsson;N. T. Son;O. Kordina;J. P. Bergman

434
Citations
Isolated electron spins in silicon carbide with millisecond coherence times

David J. Christle;Abram L. Falk;Paolo Andrich;Paolo Andrich;Paul V. Klimov;Paul V. Klimov

405
Citations
Deep levels created by low energy electron irradiation in 4H-SiC

Liutauras Storasta;J.R. Bergman;Erik Janzén;Anne Henry

386
Citations
Negative-U System of Carbon Vacancy in 4H-SiC

NT Son;X T Trinh;Lars Sundnes Løvlie;Bengt Gunnar Svensson

330
Citations
Theory of spin-conserving excitation of the N-V(-) center in diamond.

Adam Gali;Adam Gali;Erik Janzén;Péter Deák;Georg Kresse

327
Citations
Silicon vacancy related defect in 4H and 6H SiC

E. Sörman;N. T. Son;W. M. Chen;O. Kordina

304
Citations
Divacancy in 4H-SiC.

N. T. Son;P. Carlsson;J. ul Hassan;E. Janzén

274
Citations
High-resolution studies of sulfur- and selenium-related donor centers in silicon

E. Janzén;R. Stedman;G. Grossmann;H. G. Grimmeiss

265
Citations
Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals

M. Schubert;M. Schubert;R. Korlacki;S. Knight;T. Hofmann;T. Hofmann

246
Citations
Electrically active defects in n-type 4H-silicon carbide grown in a vertical hot-wall reactor

J. Zhang;L. Storasta;J. P. Bergman;N. T. Son

246
Citations
Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

Qamar Ul Wahab;A Ellison;Anne Henry;Erik Janzén

235
Citations
Scalable quantum photonics with single color centers in silicon carbide

Marina Radulaski;Matthias Widmann;Matthias Niethammer;Jingyuan Linda Zhang

227
Citations
Electronic structure of the GaAs:MnGa center

M. Linnarsson;Erik Janzén;Bo Monemar;M. Kleverman

225
Citations
Negative- U centers in 4 H silicon carbide

C. G. Hemmingsson;N. T. Son;A. Ellison;J. Zhang

194
Citations
Growth of SiC by Hot-Wall CVD and HTCVD

O. Kordina;C. Hallin;A. Henry;J. P. Bergman

186
Citations
In situ substrate preparation for high-quality SiC chemical vapour deposition

C. Hallin;F. Owman;P. Mårtensson;A. Ellison

175
Citations
Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching

Fredrik Owman;C. Hallin;Per Mårtensson;E. Janzén

169
Citations
Electron effective masses in 4H SiC

N. T. Son;W. M. Chen;O. Kordina;A. O. Konstantinov

160
Citations
Luminescence from stacking faults in 4H SiC

S. G. Sridhara;F. H. C. Carlsson;J. P. Bergman;E. Janzén

147
Citations
Tellurium donors in silicon

H. G. Grimmeiss;E. Janzén;H. Ennen;O. Schirmer

141
Citations