Erik Janzén

Overview

Best Publications

• Coherent control of single spins in silicon carbide at room temperature

  Matthias Widmann;Sang-Yun Lee;Torsten Rendler;Nguyen Tien Son

  718
  Citations

• Coherent control of single spins in silicon carbide at room temperature

  Matthias Widmann;Sang-Yun Lee;Torsten Rendler;Nguyen Tien Son

  510
  Citations

• Accurate defect levels obtained from the HSE06 range-separated hybrid functional

  Peter Deák;Bálint Aradi;Thomas Frauenheim;Erik Janzén

  438
  Citations

• Deep level defects in electron-irradiated 4H SiC epitaxial layers

  C. Hemmingsson;N. T. Son;O. Kordina;J. P. Bergman

  434
  Citations

• Isolated electron spins in silicon carbide with millisecond coherence times

  David J. Christle;Abram L. Falk;Paolo Andrich;Paolo Andrich;Paul V. Klimov;Paul V. Klimov

  405
  Citations

• Deep levels created by low energy electron irradiation in 4H-SiC

  Liutauras Storasta;J.R. Bergman;Erik Janzén;Anne Henry

  386
  Citations

• Negative-U System of Carbon Vacancy in 4H-SiC

  NT Son;X T Trinh;Lars Sundnes Løvlie;Bengt Gunnar Svensson

  330
  Citations

• Theory of spin-conserving excitation of the N-V(-) center in diamond.

  Adam Gali;Adam Gali;Erik Janzén;Péter Deák;Georg Kresse

  327
  Citations

• Silicon vacancy related defect in 4H and 6H SiC

  E. Sörman;N. T. Son;W. M. Chen;O. Kordina

  304
  Citations

• Divacancy in 4H-SiC.

  N. T. Son;P. Carlsson;J. ul Hassan;E. Janzén

  274
  Citations

• High-resolution studies of sulfur- and selenium-related donor centers in silicon

  E. Janzén;R. Stedman;G. Grossmann;H. G. Grimmeiss

  265
  Citations

• Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals

  M. Schubert;M. Schubert;R. Korlacki;S. Knight;T. Hofmann;T. Hofmann

  246
  Citations

• Electrically active defects in n-type 4H-silicon carbide grown in a vertical hot-wall reactor

  J. Zhang;L. Storasta;J. P. Bergman;N. T. Son

  246
  Citations

• Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

  Qamar Ul Wahab;A Ellison;Anne Henry;Erik Janzén

  235
  Citations

• Scalable quantum photonics with single color centers in silicon carbide

  Marina Radulaski;Matthias Widmann;Matthias Niethammer;Jingyuan Linda Zhang

  227
  Citations

• Electronic structure of the GaAs:MnGa center

  M. Linnarsson;Erik Janzén;Bo Monemar;M. Kleverman

  225
  Citations

• Negative- U centers in 4 H silicon carbide

  C. G. Hemmingsson;N. T. Son;A. Ellison;J. Zhang

  194
  Citations

• Growth of SiC by Hot-Wall CVD and HTCVD

  O. Kordina;C. Hallin;A. Henry;J. P. Bergman

  186
  Citations

• In situ substrate preparation for high-quality SiC chemical vapour deposition

  C. Hallin;F. Owman;P. Mårtensson;A. Ellison

  175
  Citations

• Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching

  Fredrik Owman;C. Hallin;Per Mårtensson;E. Janzén

  169
  Citations

• Electron effective masses in 4H SiC

  N. T. Son;W. M. Chen;O. Kordina;A. O. Konstantinov

  160
  Citations

• Luminescence from stacking faults in 4H SiC

  S. G. Sridhara;F. H. C. Carlsson;J. P. Bergman;E. Janzén

  147
  Citations

• Tellurium donors in silicon

  H. G. Grimmeiss;E. Janzén;H. Ennen;O. Schirmer

  141
  Citations