2026 Nguyen Tien Son: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	63	6291	6084	64	60	273	12079

Overview

Nguyen Tien Son is affiliated with Linköping University in Sweden and focuses their research primarily in the fields of Engineering and Materials Science. Their work contributes extensively to the understanding and advancement of semiconductor materials and quantum technologies, with a specific emphasis on silicon carbide semiconductor technologies and related quantum phenomena.

Their recent publications span several high-impact journals and cover topics involving diamond and carbon-based materials, semiconductor devices, and quantum transport. Notable papers include:

Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence, 2021, published in Nature Materials
Developing silicon carbide for quantum spintronics, 2020, published in Applied Physics Letters
Five-second coherence of a single spin with single-shot readout in silicon carbide, 2022, published in Science Advances
Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide, 2020, published in Nature Communications
Charge state control of the silicon vacancy and divacancy in silicon carbide, 2021, published in Journal of Applied Physics

Nguyen Tien Son collaborates frequently with researchers such as Jawad Ul-Hassan, Takeshi Ohshima, Florian Kaiser, Ivan G. Ivanov, and Jörg Wrachtrup. These partnerships have resulted in significant contributions to topics involving atomic and molecular physics as well as optics.

Their publication record indicates frequent contributions to venues including:

arXiv (Cornell University)
Applied Physics Letters
Journal of Applied Physics
Physical Review B
Nature Communications

Their fields of study break down into subfields such as Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics and Optics, Artificial Intelligence, and Structural Biology.

Main research topics covered by Nguyen Tien Son focus on:

Diamond and Carbon-based Materials Research
Semiconductor materials and devices
Silicon Carbide Semiconductor Technologies
Quantum and electron transport phenomena
Advancements in Semiconductor Devices and Circuit Design
Advanced Electron Microscopy Techniques and Applications
Silicon Nanostructures and Photoluminescence

Best Publications

Coherent control of single spins in silicon carbide at room temperature

Matthias Widmann;Sang-Yun Lee;Torsten Rendler;Nguyen Tien Son

718
Citations
Coherent control of single spins in silicon carbide at room temperature

Matthias Widmann;Sang-Yun Lee;Torsten Rendler;Nguyen Tien Son

510
Citations
Deep level defects in electron-irradiated 4H SiC epitaxial layers

C. Hemmingsson;N. T. Son;O. Kordina;J. P. Bergman

434
Citations
Isolated electron spins in silicon carbide with millisecond coherence times

David J. Christle;Abram L. Falk;Paolo Andrich;Paolo Andrich;Paul V. Klimov;Paul V. Klimov

405
Citations
Negative-U System of Carbon Vacancy in 4H-SiC

NT Son;X T Trinh;Lars Sundnes Løvlie;Bengt Gunnar Svensson

330
Citations
Silicon vacancy related defect in 4H and 6H SiC

E. Sörman;N. T. Son;W. M. Chen;O. Kordina

304
Citations
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Roland Nagy;Matthias Niethammer;Matthias Widmann;Yu-Chen Chen

287
Citations
Divacancy in 4H-SiC.

N. T. Son;P. Carlsson;J. ul Hassan;E. Janzén

274
Citations
Electrically active defects in n-type 4H-silicon carbide grown in a vertical hot-wall reactor

J. Zhang;L. Storasta;J. P. Bergman;N. T. Son

246
Citations
Scalable quantum photonics with single color centers in silicon carbide

Marina Radulaski;Matthias Widmann;Matthias Niethammer;Jingyuan Linda Zhang

227
Citations
Negative- U centers in 4 H silicon carbide

C. G. Hemmingsson;N. T. Son;A. Ellison;J. Zhang

194
Citations
Growth of SiC by Hot-Wall CVD and HTCVD

O. Kordina;C. Hallin;A. Henry;J. P. Bergman

186
Citations
Developing silicon carbide for quantum spintronics

Nguyen T. Son;Christopher P. Anderson;Alexandre Bourassa;Kevin C. Miao

180
Citations
Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence.

Charles Babin;Rainer Stöhr;Naoya Morioka;Naoya Morioka;Tobias Linkewitz

176
Citations
Entanglement and control of single nuclear spins in isotopically engineered silicon carbide.

Alexandre Bourassa;Christopher P. Anderson;Kevin C. Miao;Mykyta Onizhuk

171
Citations
Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

Roland Nagy;Matthias Widmann;Matthias Niethammer;Durga B. R. Dasari

161
Citations
Electron effective masses in 4H SiC

N. T. Son;W. M. Chen;O. Kordina;A. O. Konstantinov

160
Citations
Five-second coherence of a single spin with single-shot readout in silicon carbide

Christopher P. Anderson;Elena O. Glen;Cyrus Zeledon;Alexandre Bourassa

150
Citations
Identification of Si-vacancy related room-temperature qubits in 4 H silicon carbide

Viktor Ivády;Viktor Ivády;Joel Davidsson;Nguyen Tien Son;Takeshi Ohshima

141
Citations
Electrical and optical control of single spins integrated in scalable semiconductor devices.

Christopher P. Anderson;Alexandre Bourassa;Kevin C. Miao;Gary Wolfowicz

140
Citations
Carbon vacancy-related defect in 4H and 6H SiC

N. T. Son;P. N. Hai;E. Janzén

134
Citations
Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC

B. Aradi;A. Gali;P. Deák;J. E. Lowther

132
Citations
Aggregation of carbon interstitials in silicon carbide: A theoretical study

A. Gali;P. Deák;P. Ordejón;N. T. Son

125
Citations