World's Best Scientists 2026 revealed!
Nguyen Tien Son

Nguyen Tien Son

D-Index & Metrics

Materials Science

D-Index
63
Citations
12079
World Ranking
6289
National Ranking
64

Nguyen Tien Son publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Nguyen Tien Son sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 273 publications — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Nguyen Tien Son D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Nguyen Tien Son sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 63 D-Index — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Nguyen Tien Son is affiliated with Linköping University in Sweden and focuses their research primarily in the fields of Engineering and Materials Science. Their work contributes extensively to the understanding and advancement of semiconductor materials and quantum technologies, with a specific emphasis on silicon carbide semiconductor technologies and related quantum phenomena.

Their recent publications span several high-impact journals and cover topics involving diamond and carbon-based materials, semiconductor devices, and quantum transport. Notable papers include:

  • Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence, 2021, published in Nature Materials
  • Developing silicon carbide for quantum spintronics, 2020, published in Applied Physics Letters
  • Five-second coherence of a single spin with single-shot readout in silicon carbide, 2022, published in Science Advances
  • Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide, 2020, published in Nature Communications
  • Charge state control of the silicon vacancy and divacancy in silicon carbide, 2021, published in Journal of Applied Physics

Nguyen Tien Son collaborates frequently with researchers such as Jawad Ul-Hassan, Takeshi Ohshima, Florian Kaiser, Ivan G. Ivanov, and Jörg Wrachtrup. These partnerships have resulted in significant contributions to topics involving atomic and molecular physics as well as optics.

Their publication record indicates frequent contributions to venues including:

  • arXiv (Cornell University)
  • Applied Physics Letters
  • Journal of Applied Physics
  • Physical Review B
  • Nature Communications

Their fields of study break down into subfields such as Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics and Optics, Artificial Intelligence, and Structural Biology.

Main research topics covered by Nguyen Tien Son focus on:

  • Diamond and Carbon-based Materials Research
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Quantum and electron transport phenomena
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Electron Microscopy Techniques and Applications
  • Silicon Nanostructures and Photoluminescence

Best Publications

  • Coherent control of single spins in silicon carbide at room temperature

    Matthias Widmann;Sang-Yun Lee;Torsten Rendler;Nguyen Tien Son

  • Coherent control of single spins in silicon carbide at room temperature

    Matthias Widmann;Sang-Yun Lee;Torsten Rendler;Nguyen Tien Son

  • Deep level defects in electron-irradiated 4H SiC epitaxial layers

    C. Hemmingsson;N. T. Son;O. Kordina;J. P. Bergman

  • Isolated electron spins in silicon carbide with millisecond coherence times

    David J. Christle;Abram L. Falk;Paolo Andrich;Paolo Andrich;Paul V. Klimov;Paul V. Klimov

  • Negative-U System of Carbon Vacancy in 4H-SiC

    NT Son;X T Trinh;Lars Sundnes Løvlie;Bengt Gunnar Svensson

  • Silicon vacancy related defect in 4H and 6H SiC

    E. Sörman;N. T. Son;W. M. Chen;O. Kordina

  • High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

    Roland Nagy;Matthias Niethammer;Matthias Widmann;Yu-Chen Chen

  • Divacancy in 4H-SiC.

    N. T. Son;P. Carlsson;J. ul Hassan;E. Janzén

  • Electrically active defects in n-type 4H-silicon carbide grown in a vertical hot-wall reactor

    J. Zhang;L. Storasta;J. P. Bergman;N. T. Son

  • Scalable quantum photonics with single color centers in silicon carbide

    Marina Radulaski;Matthias Widmann;Matthias Niethammer;Jingyuan Linda Zhang

  • Negative- U centers in 4 H silicon carbide

    C. G. Hemmingsson;N. T. Son;A. Ellison;J. Zhang

  • Growth of SiC by Hot-Wall CVD and HTCVD

    O. Kordina;C. Hallin;A. Henry;J. P. Bergman

  • Developing silicon carbide for quantum spintronics

    Nguyen T. Son;Christopher P. Anderson;Alexandre Bourassa;Kevin C. Miao

  • Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence.

    Charles Babin;Rainer Stöhr;Naoya Morioka;Naoya Morioka;Tobias Linkewitz

  • Entanglement and control of single nuclear spins in isotopically engineered silicon carbide.

    Alexandre Bourassa;Christopher P. Anderson;Kevin C. Miao;Mykyta Onizhuk

  • Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

    Roland Nagy;Matthias Widmann;Matthias Niethammer;Durga B. R. Dasari

  • Electron effective masses in 4H SiC

    N. T. Son;W. M. Chen;O. Kordina;A. O. Konstantinov

  • Five-second coherence of a single spin with single-shot readout in silicon carbide

    Christopher P. Anderson;Elena O. Glen;Cyrus Zeledon;Alexandre Bourassa

  • Identification of Si-vacancy related room-temperature qubits in 4 H silicon carbide

    Viktor Ivády;Viktor Ivády;Joel Davidsson;Nguyen Tien Son;Takeshi Ohshima

  • Electrical and optical control of single spins integrated in scalable semiconductor devices.

    Christopher P. Anderson;Alexandre Bourassa;Kevin C. Miao;Gary Wolfowicz

  • Carbon vacancy-related defect in 4H and 6H SiC

    N. T. Son;P. N. Hai;E. Janzén

  • Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC

    B. Aradi;A. Gali;P. Deák;J. E. Lowther

  • Aggregation of carbon interstitials in silicon carbide: A theoretical study

    A. Gali;P. Deák;P. Ordejón;N. T. Son

Frequent Co-Authors

Erik Janzén
Erik Janzén Linköping University
Adam Gali
Adam Gali Budapest University of Technology and Economics
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Weimin Chen
Weimin Chen Linköping University
Bo Monemar
Bo Monemar Linköping University
Jörg Wrachtrup
Jörg Wrachtrup University of Stuttgart
David D. Awschalom
David D. Awschalom Argonne National Laboratory
Igor A. Abrikosov
Igor A. Abrikosov Linköping University
Wolfgang J. Choyke
Wolfgang J. Choyke University of Pittsburgh
Jelena Vuckovic
Jelena Vuckovic Stanford University

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