Wolfgang J. Choyke

Research.com Recognitions

• 1994 - Fellow of the American Association for the Advancement of Science (AAAS)
• 1962 - Fellow of American Physical Society (APS)

Overview

Best Publications

• Silicon carbide : recent major advances

  W. J. Choyke;弘之 松波;G. Pensl

  566
  Citations

• Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

  T. Dalibor;G. Pensl;H. Matsunami;T. Kimoto

  535
  Citations

• Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes 3 C , 4 H , 6 H , 1 5 R , and 2 1 R

  Unknown

  496
  Citations

• An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

  S. Strite;J. Ruan;Z. Li;A. Salvador

  462
  Citations

• Electrical and optical characterization of SiC

  G. Pensl;W.J. Choyke

  402
  Citations

• Comparative electron spectroscopic studies of surface segregation on SiC(0001) and SiC(0001̄)

  L. Muehlhoff;W. J. Choyke;M. J. Bozack;John T. Yates

  380
  Citations

• Physical Properties of SiC

  Unknown

  255
  Citations

• Adsorption and thermal behavior of ethylene on Si(100)-(2 × 1)

  L. Clemen;R.M. Wallace;P.A. Taylor;M.J. Dresser

  253
  Citations

• Nitrogen donors in 4H‐silicon carbide

  W. Götz;A. Schöner;G. Pensl;W. Suttrop

  248
  Citations

• Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100) Si

  Z. C. Feng;A. J. Mascarenhas;W. J. Choyke;J. A. Powell

  245
  Citations

• Static Dielectric Constant of SiC

  Unknown

  237
  Citations

• Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband Absorption

  Unknown

  237
  Citations

• Field effect in epitaxial graphene on a silicon carbide substrate

  Gong Gu;Shu Nie;Randall M. Feenstra;R. P. Devaty

  223
  Citations

• Hall effect and infrared absorption measurements on nitrogen donors in 6H‐silicon carbide

  W. Suttrop;G. Pensl;W. J. Choyke;R. Stein

  210
  Citations

• Adsorption and decomposition of acetylene on Si(100)-(2×1)

  P. A. Taylor;R. M. Wallace;C. C. Cheng;W. H. Weinberg

  209
  Citations

• Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers

  J. A. Powell;J. B. Petit;J. H. Edgar;I. G. Jenkins

  207
  Citations

• Defects in SiO 2 as the possible origin of near interface traps in the SiC ∕ SiO 2 system: A systematic theoretical study

  J. Knaup;P. Deák;Th. Frauenheim;Ádám Gali

  205
  Citations

• Low‐temperature photoluminescence studies of chemical‐vapor‐deposition‐grown 3C‐SiC on Si

  W. J. Choyke;Z. C. Feng;J. A. Powell

  191
  Citations

• Theoretical study of the mechanism of dry oxidation of 4H-SiC

  Jan M. Knaup;Peter Deák;Thomas Frauenheim;Adam Gali

  188
  Citations

• The Adsorption and Decomposition of NH3 on Si(100) - Detection of the NH2(a) Species

  M.J. Dresser;P.A. Taylor;R.M. Wallace;W.J. Choyke

  187
  Citations

• Direct determination of absolute monolayer coverages of chemisorbed C2H2 and C2H4 on Si(100)

  C. C. Cheng;R. M. Wallace;P. A. Taylor;W. J. Choyke

  186
  Citations

• Raman Scattering in 6H SiC

  Unknown

  184
  Citations

• Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths

  S.G Sridhara;T.J Eperjesi;R.P Devaty;W.J Choyke

  179
  Citations

• Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

  J. A. Powell;D. J. Larkin;L. G. Matus;W. J. Choyke

  175
  Citations

• Photoluminescence and transport studies of boron in 4H SiC

  S. G. Sridhara;L. L. Clemen;R. P. Devaty;W. J. Choyke

  170
  Citations

• EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SiC

  Unknown

  136
  Citations