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Materials Science

D-Index
74
Citations
17766
World Ranking
3685
National Ranking
1007

Wolfgang J. Choyke publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Wolfgang J. Choyke sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 376 publications — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Wolfgang J. Choyke D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Wolfgang J. Choyke sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 74 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 1994 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 1962 - Fellow of American Physical Society (APS)

Overview

Wolfgang J. Choyke is affiliated with the University of Pittsburgh in the United States. Their research primarily focuses on materials science and engineering, with particular attention to fields such as Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, and Materials Chemistry.

The main topics addressed in Wolfgang J. Choyke's work include:

  • Silicon Carbide Semiconductor Technologies
  • Ga2O3 and related materials
  • ZnO doping and properties

One recent publication by Wolfgang J. Choyke is titled "Band structure properties, phonons, and exciton fine structure in 4H-SiC measured by wavelength-modulated absorption and low-temperature photoluminescence," published in 2020 in Physical Review B.

Frequent co-authors in Wolfgang J. Choyke's research include:

  • Walter M. Klahold
  • Robert P. Devaty

Their work has appeared in the journal Physical Review B, reflecting a focus on condensed matter physics and materials science.

Wolfgang J. Choyke has received several professional honors including:

  • Fellow of the American Association for the Advancement of Science (AAAS), awarded in 1994
  • Fellow of American Physical Society (APS), awarded in 1962

Best Publications

  • Silicon carbide : recent major advances

    W. J. Choyke;弘之 松波;G. Pensl

  • Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

    T. Dalibor;G. Pensl;H. Matsunami;T. Kimoto

  • Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes 3 C , 4 H , 6 H , 1 5 R , and 2 1 R

    Unknown

  • An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

    S. Strite;J. Ruan;Z. Li;A. Salvador

  • Electrical and optical characterization of SiC

    G. Pensl;W.J. Choyke

  • Comparative electron spectroscopic studies of surface segregation on SiC(0001) and SiC(0001̄)

    L. Muehlhoff;W. J. Choyke;M. J. Bozack;John T. Yates

  • Physical Properties of SiC

    Unknown

  • Adsorption and thermal behavior of ethylene on Si(100)-(2 × 1)

    L. Clemen;R.M. Wallace;P.A. Taylor;M.J. Dresser

  • Nitrogen donors in 4H‐silicon carbide

    W. Götz;A. Schöner;G. Pensl;W. Suttrop

  • Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100) Si

    Z. C. Feng;A. J. Mascarenhas;W. J. Choyke;J. A. Powell

  • Static Dielectric Constant of SiC

    Unknown

  • Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband Absorption

    Unknown

  • Field effect in epitaxial graphene on a silicon carbide substrate

    Gong Gu;Shu Nie;Randall M. Feenstra;R. P. Devaty

  • Hall effect and infrared absorption measurements on nitrogen donors in 6H‐silicon carbide

    W. Suttrop;G. Pensl;W. J. Choyke;R. Stein

  • Adsorption and decomposition of acetylene on Si(100)-(2×1)

    P. A. Taylor;R. M. Wallace;C. C. Cheng;W. H. Weinberg

  • Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers

    J. A. Powell;J. B. Petit;J. H. Edgar;I. G. Jenkins

  • Defects in SiO 2 as the possible origin of near interface traps in the SiC ∕ SiO 2 system: A systematic theoretical study

    J. Knaup;P. Deák;Th. Frauenheim;Ádám Gali

  • Low‐temperature photoluminescence studies of chemical‐vapor‐deposition‐grown 3C‐SiC on Si

    W. J. Choyke;Z. C. Feng;J. A. Powell

  • Theoretical study of the mechanism of dry oxidation of 4H-SiC

    Jan M. Knaup;Peter Deák;Thomas Frauenheim;Adam Gali

  • The Adsorption and Decomposition of NH3 on Si(100) - Detection of the NH2(a) Species

    M.J. Dresser;P.A. Taylor;R.M. Wallace;W.J. Choyke

  • Direct determination of absolute monolayer coverages of chemisorbed C2H2 and C2H4 on Si(100)

    C. C. Cheng;R. M. Wallace;P. A. Taylor;W. J. Choyke

  • Raman Scattering in 6H SiC

    Unknown

  • Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths

    S.G Sridhara;T.J Eperjesi;R.P Devaty;W.J Choyke

  • Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

    J. A. Powell;D. J. Larkin;L. G. Matus;W. J. Choyke

  • Photoluminescence and transport studies of boron in 4H SiC

    S. G. Sridhara;L. L. Clemen;R. P. Devaty;W. J. Choyke

  • EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SiC

    Unknown

Frequent Co-Authors

Gerhard Pensl
Gerhard Pensl University of Erlangen-Nuremberg
Adam Gali
Adam Gali Budapest University of Technology and Economics
Tsunenobu Kimoto
Tsunenobu Kimoto Kyoto University
Erik Janzén
Erik Janzén Linköping University
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Nguyen Tien Son
Nguyen Tien Son Linköping University
Zdenek Dohnalek
Zdenek Dohnalek Pacific Northwest National Laboratory
Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
Ulrich Starke
Ulrich Starke Max Planck Society
Randall M. Feenstra
Randall M. Feenstra Carnegie Mellon University

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