His primary scientific interests are in Optoelectronics, Chemical vapor deposition, Analytical chemistry, Epitaxy and Crystallography. Hiroyuki Matsunami combines subjects such as Silicon carbide and MOSFET with his study of Optoelectronics. His work carried out in the field of Silicon carbide brings together such families of science as Ion implantation and Doping.
The various areas that Hiroyuki Matsunami examines in his Chemical vapor deposition study include Transmission electron microscopy and Hall effect. Hiroyuki Matsunami interconnects Semiconductor materials, Annealing and Thermal oxidation in the investigation of issues within Analytical chemistry. His Epitaxy research includes themes of Thin film, Substrate, Mineralogy and Nucleation.
Hiroyuki Matsunami mainly investigates Optoelectronics, Analytical chemistry, Epitaxy, Chemical vapor deposition and Molecular beam epitaxy. His Optoelectronics research incorporates elements of Silicon carbide and MOSFET. His Analytical chemistry study combines topics in areas such as Thin film, Electron diffraction, Doping and Silicon.
Hiroyuki Matsunami has included themes like Crystallography, Crystal growth, Substrate and Mineralogy in his Epitaxy study. His studies in Chemical vapor deposition integrate themes in fields like Combustion chemical vapor deposition, Morphology and Deposition. His Molecular beam epitaxy study combines topics from a wide range of disciplines, such as Triethylgallium and Reflection high-energy electron diffraction.
Epitaxy, Optoelectronics, Analytical chemistry, Chemical vapor deposition and Doping are his primary areas of study. His biological study spans a wide range of topics, including Crystallography, Thin film, Substrate and Buffer. His Optoelectronics research is multidisciplinary, relying on both Molecular beam epitaxy, Silicon carbide and Nanotechnology.
His studies deal with areas such as Impurity, Morphology and Nitrogen as well as Analytical chemistry. His Chemical vapor deposition research focuses on subjects like Photoluminescence, which are linked to Exciton. His work deals with themes such as Annealing, p–n junction and MOSFET, which intersect with Doping.
Hiroyuki Matsunami mainly focuses on Epitaxy, Analytical chemistry, Chemical vapor deposition, Optoelectronics and Wide-bandgap semiconductor. His Epitaxy research integrates issues from Nitrogen, Crystallography, Etching, Electron diffraction and Substrate. The concepts of his Analytical chemistry study are interwoven with issues in Decomposition, Sheet resistance, Mineralogy and Electrical resistivity and conductivity.
While the research belongs to areas of Mineralogy, he spends his time largely on the problem of Thin film, intersecting his research to questions surrounding Yield. His Chemical vapor deposition research is multidisciplinary, incorporating elements of Deep level, Doping and Morphology. His Optoelectronics study frequently draws parallels with other fields, such as Oxide.
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Step-controlled epitaxial growth of SiC: High quality homoepitaxy
Hiroyuki Matsunami;Tsunenobu Kimoto.
Materials Science & Engineering R-reports (1997)
Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
T. Dalibor;G. Pensl;H. Matsunami;T. Kimoto.
Physica Status Solidi (a) (1997)
Site effect on the impurity levels in 4 H , 6 H , and 1 5 R SiC
M. Ikeda;H. Matsunami;T. Tanaka.
Physical Review B (1980)
Electronic Properties of the Interface between Si and TiO2 Deposited at Very Low Temperatures
Takashi Fuyuki;Hiroyuki Matsunami.
Japanese Journal of Applied Physics (1986)
Epitaxial growth and electric characteristics of cubic SiC on silicon
Shigehiro Nishino;Hajime Suhara;Hideyuki Ono;Hiroyuki Matsunami.
Journal of Applied Physics (1987)
Performance limiting surface defects in SiC epitaxial p-n junction diodes
T. Kimoto;N. Miyamoto;H. Matsunami.
IEEE Transactions on Electron Devices (1999)
High performance of high-voltage 4H-SiC Schottky barrier diodes
A. Itoh;T. Kimoto;H. Matsunami.
IEEE Electron Device Letters (1995)
Growth mechanism of 6H-SiC in step-controlled epitaxy
Tsunenobu Kimoto;Hironori Nishino;Woo Sik Yoo;Hiroyuki Matsunami.
Journal of Applied Physics (1993)
High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face
H. Yano;T. Hirao;T. Kimoto;H. Matsunami.
IEEE Electron Device Letters (1999)
Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer
Shigehiro Nishino;Yoshikazu Hazuki;Hiroyuki Matsunami;Tetsuro Tanaka.
Journal of The Electrochemical Society (1980)
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