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Hiroyuki Matsunami

Hiroyuki Matsunami

D-Index & Metrics

Materials Science

D-Index
69
Citations
16138
World Ranking
4677
National Ranking
221

Overview

Hiroyuki Matsunami is affiliated with Kyoto University in Japan and has contributed to research primarily in the fields of Engineering and Materials Science. Their work spans several subfields including Electrical and Electronic Engineering, Ceramics and Composites, and Mechanical Engineering.

The scientist's research concentrates on topics related to Silicon Carbide Semiconductor Technologies, Advanced Ceramic Materials Synthesis, and Aluminum Alloys Composites Properties. These areas reflect a focus on materials engineering and semiconductor applications.

Among their recent publications is the paper titled "Fundamental research on semiconductor SiC and its applications to power electronics," published in 2020 in the Proceedings of the Japan Academy Series B. This work has accumulated 91 citations, indicating engagement from the research community.

  • Fundamental research on semiconductor SiC and its applications to power electronics (2020, Proceedings of the Japan Academy Series B)

The scientist has published primarily in the Proceedings of the Japan Academy Series B, which is their frequent publication venue.

  • Proceedings of the Japan Academy Series B

Best Publications

  • Step-controlled epitaxial growth of SiC: High quality homoepitaxy

    Hiroyuki Matsunami;Tsunenobu Kimoto

  • Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

    T. Dalibor;G. Pensl;H. Matsunami;T. Kimoto

  • Site effect on the impurity levels in 4 H , 6 H , and 1 5 R SiC

    M. Ikeda;H. Matsunami;T. Tanaka

  • Electronic Properties of the Interface between Si and TiO2 Deposited at Very Low Temperatures

    Takashi Fuyuki;Hiroyuki Matsunami

  • High performance of high-voltage 4H-SiC Schottky barrier diodes

    A. Itoh;T. Kimoto;H. Matsunami

  • Performance limiting surface defects in SiC epitaxial p-n junction diodes

    T. Kimoto;N. Miyamoto;H. Matsunami

  • Epitaxial growth and electric characteristics of cubic SiC on silicon

    Shigehiro Nishino;Hajime Suhara;Hideyuki Ono;Hiroyuki Matsunami

  • High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

    H. Yano;T. Hirao;T. Kimoto;H. Matsunami

  • Growth mechanism of 6H-SiC in step-controlled epitaxy

    Tsunenobu Kimoto;Hironori Nishino;Woo Sik Yoo;Hiroyuki Matsunami

  • Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices

    Hiroyuki Matsunami

  • Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer

    Shigehiro Nishino;Yoshikazu Hazuki;Hiroyuki Matsunami;Tetsuro Tanaka

  • Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices

    A. Itoh;H. Matsunami

  • Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N2O Oxidation

    Tsunenobu Kimoto;Yosuke Kanzaki;Masato Noborio;Hiroaki Kawano

  • Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H‐SiC{0001} vicinal surfaces

    Tsunenobu Kimoto;Hiroyuki Matsunami

  • Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}

    Tsunenobu Kimoto;Akira Itoh;Hiroyuki Matsunami;Tetsuyuki Okano

  • Step‐Controlled Epitaxial Growth of High‐Quality SiC Layers

    T. Kimoto;A. Itoh;H. Matsunami

  • Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001)

    Y. Negoro;K. Katsumoto;T. Kimoto;H. Matsunami

  • Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

    H. Fujiwara;T. Kimoto;T. Tojo;H. Matsunami

  • Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination

    A. Itoh;T. Kimoto;H. Matsunami

  • Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS Structure

    Akira Suzuki;Hisashi Ashida;Nobuyuki Furui;Kazunobu Mameno

Frequent Co-Authors

Tsunenobu Kimoto
Tsunenobu Kimoto Kyoto University
Takashi Fuyuki
Takashi Fuyuki Nara Institute of Science and Technology
Jun Suda
Jun Suda Nagoya University
Tatsuo Yoshinobu
Tatsuo Yoshinobu Tohoku University
Akira Suzuki
Akira Suzuki Kobe University
Gerhard Pensl
Gerhard Pensl University of Erlangen-Nuremberg
Wolfgang J. Choyke
Wolfgang J. Choyke University of Pittsburgh
Steven Nutt
Steven Nutt University of Southern California
Furong Zhu
Furong Zhu Hong Kong Baptist University
Koji Hashimoto
Koji Hashimoto Tohoku University

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