D-Index & Metrics Best Publications
Hiroyuki Matsunami

Hiroyuki Matsunami

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 65 Citations 13,165 381 World Ranking 3356 National Ranking 174

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Oxygen
  • Hydrogen

His primary scientific interests are in Optoelectronics, Chemical vapor deposition, Analytical chemistry, Epitaxy and Crystallography. Hiroyuki Matsunami combines subjects such as Silicon carbide and MOSFET with his study of Optoelectronics. His work carried out in the field of Silicon carbide brings together such families of science as Ion implantation and Doping.

The various areas that Hiroyuki Matsunami examines in his Chemical vapor deposition study include Transmission electron microscopy and Hall effect. Hiroyuki Matsunami interconnects Semiconductor materials, Annealing and Thermal oxidation in the investigation of issues within Analytical chemistry. His Epitaxy research includes themes of Thin film, Substrate, Mineralogy and Nucleation.

His most cited work include:

  • Step-controlled epitaxial growth of SiC: High quality homoepitaxy (435 citations)
  • Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy (334 citations)
  • Site effect on the impurity levels in 4 H , 6 H , and 1 5 R SiC (260 citations)

What are the main themes of his work throughout his whole career to date?

Hiroyuki Matsunami mainly investigates Optoelectronics, Analytical chemistry, Epitaxy, Chemical vapor deposition and Molecular beam epitaxy. His Optoelectronics research incorporates elements of Silicon carbide and MOSFET. His Analytical chemistry study combines topics in areas such as Thin film, Electron diffraction, Doping and Silicon.

Hiroyuki Matsunami has included themes like Crystallography, Crystal growth, Substrate and Mineralogy in his Epitaxy study. His studies in Chemical vapor deposition integrate themes in fields like Combustion chemical vapor deposition, Morphology and Deposition. His Molecular beam epitaxy study combines topics from a wide range of disciplines, such as Triethylgallium and Reflection high-energy electron diffraction.

He most often published in these fields:

  • Optoelectronics (37.41%)
  • Analytical chemistry (36.41%)
  • Epitaxy (29.68%)

What were the highlights of his more recent work (between 2001-2020)?

  • Epitaxy (29.68%)
  • Optoelectronics (37.41%)
  • Analytical chemistry (36.41%)

In recent papers he was focusing on the following fields of study:

Epitaxy, Optoelectronics, Analytical chemistry, Chemical vapor deposition and Doping are his primary areas of study. His biological study spans a wide range of topics, including Crystallography, Thin film, Substrate and Buffer. His Optoelectronics research is multidisciplinary, relying on both Molecular beam epitaxy, Silicon carbide and Nanotechnology.

His studies deal with areas such as Impurity, Morphology and Nitrogen as well as Analytical chemistry. His Chemical vapor deposition research focuses on subjects like Photoluminescence, which are linked to Exciton. His work deals with themes such as Annealing, p–n junction and MOSFET, which intersect with Doping.

Between 2001 and 2020, his most popular works were:

  • Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N2O Oxidation (169 citations)
  • Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices (138 citations)
  • Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) (126 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Oxygen
  • Hydrogen

Hiroyuki Matsunami mainly focuses on Epitaxy, Analytical chemistry, Chemical vapor deposition, Optoelectronics and Wide-bandgap semiconductor. His Epitaxy research integrates issues from Nitrogen, Crystallography, Etching, Electron diffraction and Substrate. The concepts of his Analytical chemistry study are interwoven with issues in Decomposition, Sheet resistance, Mineralogy and Electrical resistivity and conductivity.

While the research belongs to areas of Mineralogy, he spends his time largely on the problem of Thin film, intersecting his research to questions surrounding Yield. His Chemical vapor deposition research is multidisciplinary, incorporating elements of Deep level, Doping and Morphology. His Optoelectronics study frequently draws parallels with other fields, such as Oxide.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Hiroyuki Matsunami;Tsunenobu Kimoto.
Materials Science & Engineering R-reports (1997)

716 Citations

Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

T. Dalibor;G. Pensl;H. Matsunami;T. Kimoto.
Physica Status Solidi (a) (1997)

493 Citations

Site effect on the impurity levels in 4 H , 6 H , and 1 5 R SiC

M. Ikeda;H. Matsunami;T. Tanaka.
Physical Review B (1980)

402 Citations

Electronic Properties of the Interface between Si and TiO2 Deposited at Very Low Temperatures

Takashi Fuyuki;Hiroyuki Matsunami.
Japanese Journal of Applied Physics (1986)

305 Citations

Epitaxial growth and electric characteristics of cubic SiC on silicon

Shigehiro Nishino;Hajime Suhara;Hideyuki Ono;Hiroyuki Matsunami.
Journal of Applied Physics (1987)

294 Citations

Performance limiting surface defects in SiC epitaxial p-n junction diodes

T. Kimoto;N. Miyamoto;H. Matsunami.
IEEE Transactions on Electron Devices (1999)

278 Citations

High performance of high-voltage 4H-SiC Schottky barrier diodes

A. Itoh;T. Kimoto;H. Matsunami.
IEEE Electron Device Letters (1995)

271 Citations

Growth mechanism of 6H-SiC in step-controlled epitaxy

Tsunenobu Kimoto;Hironori Nishino;Woo Sik Yoo;Hiroyuki Matsunami.
Journal of Applied Physics (1993)

249 Citations

High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

H. Yano;T. Hirao;T. Kimoto;H. Matsunami.
IEEE Electron Device Letters (1999)

248 Citations

Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer

Shigehiro Nishino;Yoshikazu Hazuki;Hiroyuki Matsunami;Tetsuro Tanaka.
Journal of The Electrochemical Society (1980)

246 Citations

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