Sadafumi Yoshida

Overview

Best Publications

• Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy

  S. Yoshida;S. Misawa;S. Gonda

  377
  Citations

• Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy

  H. Okumura;S. Misawa;S. Yoshida

  289
  Citations

• Growth and characterization of cubic GaN

  H. Okumura;K. Ohta;G. Feuillet;K. Balakrishnan

  225
  Citations

• Preparation and structure of carbon film deposited by a mass‐separated C+ ion beam

  Takeo Miyazawa;Shunji Misawa;Sadafumi Yoshida;Shun‐ichi Gonda

  209
  Citations

• Intrinsic defects in cubic silicon carbide

  H. Itoh;A. Kawasuso;T. Ohshima;M. Yoshikawa

  200
  Citations

• Temperature dependence of electrical properties of n‐ and p‐type 3C‐SiC

  M. Yamanaka;H. Daimon;E. Sakuma;S. Misawa

  171
  Citations

• The origin of persistent photoconductivity and its relationship with yellow luminescence in molecular beam epitaxy grown undoped GaN

  C. V. Reddy;K. Balakrishnan;H. Okumura;S. Yoshida

  152
  Citations

• Raman scattering of SiC: Application to the identification of heteroepitaxy of SiC polytypes

  H. Okumura;E. Sakuma;J. H. Lee;H. Mukaida

  151
  Citations

• Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films

  Y. Hijikata;H. Yaguchi;M. Yoshikawa;S. Yoshida

  149
  Citations

• Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal‐phase GaN by molecular beam epitaxy

  P. Hacke;G. Feuillet;H. Okumura;S. Yoshida

  144
  Citations

• Determination of the conduction‐band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance‐voltage measurements

  H. Okumura;S. Misawa;S. Yoshida;S. Gonda

  129
  Citations

• OPTICAL PROPERTIES NEAR THE BAND GAP ON HEXAGONAL AND CUBIC GAN

  H. Okumura;S. Yoshida;T. Okahisa

  107
  Citations

• Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

  H Okumura;H Hamaguchi;T Koizumi;K Balakrishnan

  103
  Citations

• Raman scattering of SiC: Estimation of the internal stress in 3C-SiC on Si

  H. Mukaida;H. Okumura;J. H. Lee;H. Daimon

  101
  Citations

• Radiation induced defects in CVD-grown 3C-SiC

  H. Itoh;M. Yoshikawa;I. Nashiyama;S. Misawa

  101
  Citations

• Raman studies on phonon modes in cubic AlGaN alloy

  H. Harima;T. Inoue;S. Nakashima;H. Okumura

  98
  Citations

• Arsenic mediated reconstructions on cubic (001) GaN

  G. Feuillet;H. Hamaguchi;K. Ohta;P. Hacke

  93
  Citations

• Arsenic surfactant effects and arsenic mediated molecular beam epitaxial growth for cubic GaN

  H. Okumura;H. Hamaguchi;G. Feuillet;Y. Ishida

  85
  Citations

• Photoluminescence of radiation induced defects in 3C‐SiC epitaxially grown on Si

  Hisayoshi Itoh;Masahito Yoshikawa;Isamu Nashiyama;Hajime Okumura

  79
  Citations

• Improvement of SiO2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing

  Kenji Fukuda;Kiyoko Nagai;Toshihiro Sekigawa;Sadafumi Yoshida

  73
  Citations