Sadafumi Yoshida

Sadafumi Yoshida publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Sadafumi Yoshida sits on this spectrum.

Sadafumi Yoshida D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Sadafumi Yoshida sits on this spectrum.

Overview

Best Publications

• Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy

  S. Yoshida;S. Misawa;S. Gonda

  377
  Citations

• Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy

  H. Okumura;S. Misawa;S. Yoshida

  289
  Citations

• Growth and characterization of cubic GaN

  H. Okumura;K. Ohta;G. Feuillet;K. Balakrishnan

  225
  Citations

• Preparation and structure of carbon film deposited by a mass‐separated C+ ion beam

  Takeo Miyazawa;Shunji Misawa;Sadafumi Yoshida;Shun‐ichi Gonda

  209
  Citations

• Intrinsic defects in cubic silicon carbide

  H. Itoh;A. Kawasuso;T. Ohshima;M. Yoshikawa

  200
  Citations

• Temperature dependence of electrical properties of n‐ and p‐type 3C‐SiC

  M. Yamanaka;H. Daimon;E. Sakuma;S. Misawa

  171
  Citations

• The origin of persistent photoconductivity and its relationship with yellow luminescence in molecular beam epitaxy grown undoped GaN

  C. V. Reddy;K. Balakrishnan;H. Okumura;S. Yoshida

  152
  Citations

• Raman scattering of SiC: Application to the identification of heteroepitaxy of SiC polytypes

  H. Okumura;E. Sakuma;J. H. Lee;H. Mukaida

  151
  Citations

• Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films

  Y. Hijikata;H. Yaguchi;M. Yoshikawa;S. Yoshida

  149
  Citations

• Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal‐phase GaN by molecular beam epitaxy

  P. Hacke;G. Feuillet;H. Okumura;S. Yoshida

  144
  Citations

• Determination of the conduction‐band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance‐voltage measurements

  H. Okumura;S. Misawa;S. Yoshida;S. Gonda

  129
  Citations

• OPTICAL PROPERTIES NEAR THE BAND GAP ON HEXAGONAL AND CUBIC GAN

  H. Okumura;S. Yoshida;T. Okahisa

  107
  Citations

• Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

  H Okumura;H Hamaguchi;T Koizumi;K Balakrishnan

  103
  Citations

• Raman scattering of SiC: Estimation of the internal stress in 3C-SiC on Si

  H. Mukaida;H. Okumura;J. H. Lee;H. Daimon

  101
  Citations

• Radiation induced defects in CVD-grown 3C-SiC

  H. Itoh;M. Yoshikawa;I. Nashiyama;S. Misawa

  101
  Citations

• Raman studies on phonon modes in cubic AlGaN alloy

  H. Harima;T. Inoue;S. Nakashima;H. Okumura

  98
  Citations

• Arsenic mediated reconstructions on cubic (001) GaN

  G. Feuillet;H. Hamaguchi;K. Ohta;P. Hacke

  93
  Citations

• Arsenic surfactant effects and arsenic mediated molecular beam epitaxial growth for cubic GaN

  H. Okumura;H. Hamaguchi;G. Feuillet;Y. Ishida

  85
  Citations

• Photoluminescence of radiation induced defects in 3C‐SiC epitaxially grown on Si

  Hisayoshi Itoh;Masahito Yoshikawa;Isamu Nashiyama;Hajime Okumura

  79
  Citations

• Improvement of SiO2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing

  Kenji Fukuda;Kiyoko Nagai;Toshihiro Sekigawa;Sadafumi Yoshida

  73
  Citations