World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
57
Citations
10394
World Ranking
8028
National Ranking
451

Hideyo Okushi publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Hideyo Okushi sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 360 publications — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Hideyo Okushi D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Hideyo Okushi sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 57 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Hideyo Okushi is affiliated with the National Institute of Advanced Industrial Science and Technology in Japan. This association places them within a leading research organization focused on applied science and technological innovation.

There are no recent papers listed for Hideyo Okushi, nor are there any recorded frequent co-authors, publication venues, or book publications. Additionally, no specific main fields of study, subfields, or main topics of work have been provided to define their research scope further.

There is no available information regarding awards or distinctions received by Hideyo Okushi. The data also indicates that Hideyo Okushi is currently living.

This profile reflects available verified data without extrapolation beyond the provided information.

Best Publications

  • Electrically driven single-photon source at room temperature in diamond

    N. Mizuochi;T. Makino;H. Kato;D. Takeuchi

  • Electrical properties of n-amorphous/p-crystalline silicon heterojunctions

    Hideharu Matsuura;Tetsuhiro Okuno;Hideyo Okushi;Kazunobu Tanaka

  • Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films

    Kazushi Hayashi;Sadanori Yamanaka;Hideyuki Watanabe;Takashi Sekiguchi

  • Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements

    Kazushi Hayashi;Sadanori Yamanaka;Hideyo Okushi;Koji Kajimura

  • n-type doping of (001)-oriented single-crystalline diamond by phosphorus

    Hiromitsu Kato;Satoshi Yamasaki;Hideyo Okushi

  • Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films

    Akihisa Matsuda;Satoshi Yamasaki;Katsumi Nakagawa;Hideyo Okushi

  • Direct observation of negative electron affinity in hydrogen-terminated diamond surfaces

    D. Takeuchi;H. Kato;G. S. Ri;T. Yamada

  • Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters

    Hideyo Okushi;Yozo Tokumaru

  • Homoepitaxial diamond film with an atomically flat surface over a large area

    Hideyuki Watanabe;Daisuke Takeuchi;Sadanori Yamanaka;Hideyo Okushi

  • n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface

    Hiromitsu Kato;Toshiharu Makino;Satoshi Yamasaki;Satoshi Yamasaki;Hideyo Okushi

  • High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron

    Sadanori Yamanaka;Hideyuki Watanabe;Shigeo Masai;Daisuke Takeuchi

  • Intrinsic electrical properties of Au/SrTiO3 Schottky junctions

    Takashi Shimizu;Hideyo Okushi

  • High quality homoepitaxial CVD diamond for electronic devices

    Unknown

  • Origin of band-A emission in diamond thin films

    D. Takeuchi;H. Watanabe;Shoji Yamanaka;H. Okushi

  • Strong excitonic recombination radiation from homoepitaxial diamond thin films at room temperature

    Hideyuki Watanabe;Kazushi Hayashi;Daisuke Takeuchi;Sadanori Yamanaka

  • Enhancement in emission efficiency of diamond deep-ultraviolet light emitting diode

    Toshiharu Makino;Kiyoshi Yoshino;Norihiro Sakai;Kouji Uchida

  • 600 V Diamond Junction Field-Effect Transistors Operated at 200 $^{\circ}{ m C}$

    Takayuki Iwasaki;Junya Yaita;Hiromitsu Kato;Toshiharu Makino

  • Electron-spin-echo envelope-modulation study of the distance between dangling bonds and hydrogen atoms in hydrogenated amorphous silicon.

    J. Isoya;S. Yamasaki;H. Okushi;A. Matsuda

  • Deterministic Electrical Charge-State Initialization of Single Nitrogen-Vacancy Center in Diamond

    Y. Doi;T. Makino;H. Kato;D. Takeuchi

  • Device Grade B-Doped Homoepitaxial Diamond Thin Films

    D. Takeuchi;S. Yamanaka;H. Watanabe;H. Okushi

  • Boron Doping of Hydrogenated Silicon Thin Films

    Akihisa Matsuda;Mitsuo Matsumura;Satoshi Yamasaki;Hideo Yamamoto

  • The properties of Schottky junctions on Nb-doped SrTiO3 (001)

    Takashi Shimizu;Naoki Gotoh;Naoya Shinozaki;Hideyo Okushi

Frequent Co-Authors

Satoshi Yamasaki
Satoshi Yamasaki Kanazawa University
Takashi Sekiguchi
Takashi Sekiguchi University of Tsukuba
Akihisa Matsuda
Akihisa Matsuda National Institute of Advanced Industrial Science and Technology
Hiromichi Ohashi
Hiromichi Ohashi Tokyo Institute of Technology
Hiroshi Kawarada
Hiroshi Kawarada Waseda University
Tokuyuki Teraji
Tokuyuki Teraji National Institute for Materials Science
Christoph E. Nebel
Christoph E. Nebel Diamond and Carbon Applications
Hajime Haneda
Hajime Haneda National Institute for Materials Science
Sadafumi Yoshida
Sadafumi Yoshida National Institute of Advanced Industrial Science and Technology
Naoki Ohashi
Naoki Ohashi National Institute for Materials Science

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