World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
61
Citations
14894
World Ranking
6712
National Ranking
350

Yasuo Koide publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Yasuo Koide sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 415 publications — 79th percentile

79% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Yasuo Koide D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Yasuo Koide sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 61 D-Index — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Yasuo Koide is affiliated with the National Institute for Materials Science in Japan. Their research spans multiple fields, focusing notably on engineering, materials science, and physics and astronomy. Within these broader domains, their work concentrates on subfields including electrical and electronic engineering, materials chemistry, atomic and molecular physics and optics, condensed matter physics, and electronic, optical, and magnetic materials.

The scientist's research addresses a variety of topics relevant to advanced materials and semiconductor technologies. Notable areas of focus include diamond and carbon-based materials research, semiconductor materials and devices, GaN-based semiconductor devices and materials, force microscopy techniques and applications, Ga2O3 and related materials, mechanical and optical resonators, and advanced memory and neural computing.

Yasuo Koide has published extensively across prominent scientific journals. Their recent papers include the following:

  • "Edge-of-chaos learning achieved by ion-electron-coupled dynamics in an ion-gating reservoir" (2022, Science Advances)
  • "Enhancing Delta E Effect at High Temperatures of Galfenol/Ti/Single-Crystal Diamond Resonators for Magnetic Sensing" (2020, ACS Applied Materials & Interfaces)
  • "Coupling of magneto-strictive FeGa film with single-crystal diamond MEMS resonator for high-reliability magnetic sensing at high temperatures" (2020, Materials Research Letters)
  • "Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor" (2020, Journal of Alloys and Compounds)
  • "On-chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film" (2023, Advanced Functional Materials)

The primary publication venues where Yasuo Koide has frequently contributed research include:

  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • ECS Journal of Solid State Science and Technology
  • ECS Meeting Abstracts
  • Diamond and Related Materials

Collaborative work is a substantial part of Koide's research output. Frequent coauthors include Meiyong Liao, Masataka Imura, Satoshi Koizumi, Liwen Sang, and Toshihide Nabatame. These partnerships reflect a networked approach to advancing studies in materials science and electronic engineering.

Best Publications

  • Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

    Isamu Akasaki;Hiroshi Amano;Yasuo Koide;Kazumasa Hiramatsu

  • Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors

    Xiaosheng Fang;Yoshio Bando;Meiyong Liao;Ujjal K. Gautam

  • Centimeter-long V2O5 nanowires: from synthesis to field-emission, electrochemical, electrical transport, and photoconductive properties

    T. Zhai;H. Liu;H. Li;X. Fang

  • Single-crystalline CdS nanobelts for excellent field-emitters and ultrahigh quantum-efficiency photodetectors.

    Liang Li;Pei Cai Wu;Xiao Sheng Fang;Tian You Zhai

  • Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection

    Yanbo Li;Takero Tokizono;Meiyong Liao;Miao Zhong

  • Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces

    Hidenori Ishikawa;Setsuko Kobayashi;Y. Koide;S. Yamasaki

  • Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors.

    Tianyou Zhai;Tianyou Zhai;Xiaosheng Fang;Meiyong Liao;Xijin Xu

  • Energy band‐gap bowing parameter in an AlxGa1−x N alloy

    Y. Koide;H. Itoh;M. R. H. Khan;K. Hiramatu

  • Polarization independent visible color filter comprising an aluminum film with surface-plasmon enhanced transmission through a subwavelength array of holes

    Daisuke Inoue;Atsushi Miura;Tsuyoshi Nomura;Hisayoshi Fujikawa

  • Ultrahigh‐Performance Solar‐Blind Photodetectors Based on Individual Single‐crystalline In2Ge2O7 Nanobelts

    Liang Li;Pooi See Lee;Chaoyi Yan;Tianyou Zhai

  • Flexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS‐ZnO Heterostructure Nanofilms

    Wei Tian;Wei Tian;Chao Zhang;Tianyou Zhai;Song-Lin Li

  • An Efficient Way to Assemble ZnS Nanobelts as Ultraviolet‐Light Sensors with Enhanced Photocurrent and Stability

    Xiaosheng Fang;Yoshio Bando;Meiyong Liao;Tianyou Zhai

  • Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts.

    Liang Li;Erwin Auer;Meiyong Liao;Xiaosheng Fang

  • High-performance blue/ultraviolet-light-sensitive ZnSe-nanobelt photodetectors

    Xiaosheng Fang;Shenglin Xiong;Tianyou Zhai;Yoshio Bando

  • Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN

    Yasuo Koide;T. Maeda;T. Kawakami;S. Fujita

  • Electrical Transport and High‐Performance Photoconductivity in Individual ZrS2 Nanobelts

    Liang Li;Xiaosheng Fang;Tianyou Zhai;Meiyong Liao

  • Single‐Crystalline Sb2Se3 Nanowires for High‐Performance Field Emitters and Photodetectors

    Tianyou Zhai;Mingfu Ye;Liang Li;Xiaosheng Fang

  • Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric

    Jiangwei Liu;Meiyong Liao;Masataka Imura;Akihiro Tanaka

  • Extreme dielectric strength in boron doped homoepitaxial diamond

    Pierre-Nicolas Volpe;Pierre Muret;Julien Pernot;Franck Omnès

  • Effect of aln buffer layer on algan/α-al2o3heteroepitaxial growth by metalorganic vapor phase epitaxy

    Yasuo Koide;Nobuo Itoh;Kenji Itoh;Nobuhiko Sawaki

  • Electrical transport and high-performance photoconductivity in individual ZrS(2) nanobelts

    L. Li;X. Fang;T. Zhai;M. Liao

Frequent Co-Authors

Meiyong Liao
Meiyong Liao National Institute for Materials Science
Tokuyuki Teraji
Tokuyuki Teraji National Institute for Materials Science
Yoshio Bando
Yoshio Bando University of Wollongong
Tianyou Zhai
Tianyou Zhai Huazhong University of Science and Technology
Dmitri Golberg
Dmitri Golberg Queensland University of Technology
Xiaosheng Fang
Xiaosheng Fang Fudan University
Ujjal K. Gautam
Ujjal K. Gautam IISER Mohali
Hiroshi Amano
Hiroshi Amano Nagoya University
Osami Sakata
Osami Sakata Japan Synchrotron Radiation Research Institute
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science

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