Yasuo Koide mainly focuses on Optoelectronics, Photodetector, Ohmic contact, Diamond and Nanotechnology. His work carried out in the field of Optoelectronics brings together such families of science as Field-effect transistor and Optics. Yasuo Koide has included themes like Detector, Nanostructure, Photoconductivity, Photocurrent and Ultraviolet in his Photodetector study.
His Ohmic contact research incorporates elements of Metallurgy, Annealing, Semiconductor, Schottky barrier and Contact resistance. His Metallurgy study integrates concerns from other disciplines, such as Doping and Analytical chemistry. His work on Nanowire as part of general Nanotechnology research is often related to Ultraviolet light, thus linking different fields of science.
Yasuo Koide mostly deals with Optoelectronics, Diamond, Analytical chemistry, Layer and Ohmic contact. Photodetector, Schottky barrier, Semiconductor, Photocurrent and Ultraviolet are the primary areas of interest in his Optoelectronics study. His study in Photodetector is interdisciplinary in nature, drawing from both Nanostructure, Visible spectrum and Photoconductivity.
His Diamond research is multidisciplinary, incorporating perspectives in Schottky diode, Nanotechnology, Microelectromechanical systems, Field-effect transistor and Heterojunction. His Analytical chemistry research is multidisciplinary, relying on both Molecular beam epitaxy, Substrate, Doping and Electrical resistivity and conductivity. As part of the same scientific family, Yasuo Koide usually focuses on Ohmic contact, concentrating on Contact resistance and intersecting with Work function.
His scientific interests lie mostly in Optoelectronics, Diamond, Epitaxy, Capacitor and Microelectromechanical systems. The concepts of his Optoelectronics study are interwoven with issues in Layer and Transistor. Yasuo Koide interconnects Schottky diode, Schottky barrier and Ion implantation in the investigation of issues within Layer.
His Diamond research is multidisciplinary, incorporating elements of Field-effect transistor and Metal. His study on Epitaxy also encompasses disciplines like
Crystal that intertwine with fields like Crystallinity and Anisotropy,
Full width at half maximum and Thin film most often made with reference to Diffraction,
Doping, which have a strong connection to Graphite, Heterojunction, High-electron-mobility transistor and Passivation,
Wafer and related Substrate and Condensed matter physics. His Capacitor research also works with subjects such as
Annealing which intersects with area such as Analytical chemistry and Flat band,
High-κ dielectric, which have a strong connection to Sputter deposition.
His primary areas of investigation include Optoelectronics, Diamond, Annealing, Capacitor and Resonator. The various areas that Yasuo Koide examines in his Optoelectronics study include Field-effect transistor, Transistor, Layer, Passivation and Microstructure. He usually deals with Microstructure and limits it to topics linked to High electron and Ultraviolet, Photodetector and Specific detectivity.
His Photodetector research integrates issues from Single crystal and Visible spectrum. The study incorporates disciplines such as Semiconductor device, Ab initio quantum chemistry methods and Electronic band structure in addition to Diamond. Yasuo Koide usually deals with Annealing and limits it to topics linked to Analytical chemistry and Thermal stability, Electrode, Electrical resistivity and conductivity, Ohmic contact and Chemical vapor deposition.
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Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
Isamu Akasaki;Hiroshi Amano;Yasuo Koide;Kazumasa Hiramatsu.
Journal of Crystal Growth (1989)
Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors
Xiaosheng Fang;Yoshio Bando;Meiyong Liao;Ujjal K. Gautam.
Advanced Materials (2009)
Centimeter-long V2O5 nanowires: from synthesis to field-emission, electrochemical, electrical transport, and photoconductive properties
T. Zhai;H. Liu;H. Li;X. Fang.
Science & Engineering Faculty (2010)
Single-crystalline CdS nanobelts for excellent field-emitters and ultrahigh quantum-efficiency photodetectors.
Liang Li;Pei Cai Wu;Xiao Sheng Fang;Tian You Zhai.
Advanced Materials (2010)
Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces
Hidenori Ishikawa;Setsuko Kobayashi;Y. Koide;S. Yamasaki.
Journal of Applied Physics (1997)
Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection
Yanbo Li;Takero Tokizono;Meiyong Liao;Miao Zhong.
Advanced Functional Materials (2010)
Energy band‐gap bowing parameter in an AlxGa1−x N alloy
Y. Koide;H. Itoh;M. R. H. Khan;K. Hiramatu.
Journal of Applied Physics (1987)
Polarization independent visible color filter comprising an aluminum film with surface-plasmon enhanced transmission through a subwavelength array of holes
Daisuke Inoue;Atsushi Miura;Tsuyoshi Nomura;Hisayoshi Fujikawa.
Applied Physics Letters (2011)
Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors.
Tianyou Zhai;Tianyou Zhai;Xiaosheng Fang;Meiyong Liao;Xijin Xu.
ACS Nano (2010)
Ultrahigh‐Performance Solar‐Blind Photodetectors Based on Individual Single‐crystalline In2Ge2O7 Nanobelts
Liang Li;Pooi See Lee;Chaoyi Yan;Tianyou Zhai.
Advanced Materials (2010)
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