Robert F. Davis

Research.com Recognitions

• 2001 - Member of the National Academy of Engineering For contributions in the development of silicon carbide and group III-nitrides as practical electronic materials for devices.

Overview

Best Publications

• Strain-related phenomena in GaN thin films

  C. Kisielowski;J. Krüger;S. Ruvimov;T. Suski

  1067
  Citations

• Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

  Ok-Hyun Nam;Michael D. Bremser;Tsvetanka S. Zheleva;Robert F. Davis

  894
  Citations

• Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

  Tsvetanka S. Zheleva;Ok-Hyun Nam;Michael D. Bremser;Robert F. Davis

  697
  Citations

• III-V nitrides for electronic and optoelectronic applications

  R.F. Davis

  634
  Citations

• Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

  R.F. Davis;G. Kelner;M. Shur;J.W. Palmour

  594
  Citations

• A critical review of ohmic and rectifying contacts for silicon carbide

  Lisa M. Porter;Robert F. Davis

  585
  Citations

• METHOD FOR GROWING LARGE-SIZED SINGLE-POLYTYPE SILICON CARBIDE SINGLE CRYSTAL

  Davis Robert F;Carter Jr Calvin H;Hunter Charles E

  532
  Citations

• Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy

  M. J. Paisley;Z. Sitar;J. B. Posthill;R. F. Davis

  506
  Citations

• Cleaning of AlN and GaN surfaces

  S. W. King;J. P. Barnak;M. D. Bremser;K. M. Tracy

  409
  Citations

• Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(0001̄)

  B. J. Coppa;R. F. Davis;R. J. Nemanich

  404
  Citations

• Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

  Robert F. Davis;Ok-Hyun Nam;Tsvetanka Zheleva;Michael D. Bremser

  376
  Citations

• Epitaxial Growth and Characterization of β ‐ SiC Thin Films

  P. Liaw;R. F. Davis

  365
  Citations

• GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

  T. Warren Weeks;Michael D. Bremser;K. Shawn Ailey;Eric Carlson

  339
  Citations

• Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

  Kevin J. Linthicum;Thomas Gehrke;Robert F. Davis;Darren B. Thomson

  331
  Citations

• Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures

  Tsvetanka S. Zheleva;Scott A. Smith;Darren B. Thomson;Thomas Gehrke

  330
  Citations

• Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates

  H. S. Kong;J. T. Glass;R. F. Davis

  300
  Citations

• Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

  R.F. Davis;Z. Sitar;B.E. Williams;H.S. Kong

  284
  Citations

• Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)

  M. C. Benjamin;Cheng Wang;R. F. Davis;R. J. Nemanich

  278
  Citations

• Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

  Kevin J. Linthicum;Thomas Gehrke;Darren B. Thomson;Eric P. Carlson

  271
  Citations

• Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby

  Thomas Gehrke;Kevin J. Linthicum;Robert F. Davis

  270
  Citations