The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Robert F. Davis sits on this spectrum.
This scientist: 740 publications — 96th percentile
96% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Robert F. Davis sits on this spectrum.
This scientist: 102 D-Index — 93rd percentile
93% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Robert F. Davis is affiliated with Carnegie Mellon University in the United States. Their research primarily spans the fields of Materials Science and Energy, with a significant focus on subfields including Materials Chemistry, Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Mechanics of Materials, and Electrical and Electronic Engineering.
The main topics of their research include Ga2O3 and related materials, Advanced Photocatalysis Techniques, ZnO doping and properties, Boron and Carbon Nanomaterials Research, Metal and Thin Film Mechanics, Diamond and Carbon-based Materials Research, and Thermal properties of materials.
Among their frequent coauthors are Lisa M. Porter, Jingyu Tang, Kunyao Jiang, Matthew J. Cabral, and Philip M. Jean-Remy. Their publications are commonly found in venues such as Applied Physics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Journal of Applied Physics, arXiv (Cornell University), and IEEE Transactions on Electromagnetic Compatibility.
Recent papers by Robert F. Davis include:
Robert F. Davis was awarded membership in the National Academy of Engineering in 2001 for contributions in the development of silicon carbide and group III-nitrides as practical electronic materials for devices.
C. Kisielowski;J. Krüger;S. Ruvimov;T. Suski
Ok-Hyun Nam;Michael D. Bremser;Tsvetanka S. Zheleva;Robert F. Davis
Tsvetanka S. Zheleva;Ok-Hyun Nam;Michael D. Bremser;Robert F. Davis
R.F. Davis
R.F. Davis;G. Kelner;M. Shur;J.W. Palmour
Lisa M. Porter;Robert F. Davis
Davis Robert F;Carter Jr Calvin H;Hunter Charles E
M. J. Paisley;Z. Sitar;J. B. Posthill;R. F. Davis
S. W. King;J. P. Barnak;M. D. Bremser;K. M. Tracy
B. J. Coppa;R. F. Davis;R. J. Nemanich
Robert F. Davis;Ok-Hyun Nam;Tsvetanka Zheleva;Michael D. Bremser
P. Liaw;R. F. Davis
T. Warren Weeks;Michael D. Bremser;K. Shawn Ailey;Eric Carlson
Kevin J. Linthicum;Thomas Gehrke;Robert F. Davis;Darren B. Thomson
Tsvetanka S. Zheleva;Scott A. Smith;Darren B. Thomson;Thomas Gehrke
H. S. Kong;J. T. Glass;R. F. Davis
R.F. Davis;Z. Sitar;B.E. Williams;H.S. Kong
M. C. Benjamin;Cheng Wang;R. F. Davis;R. J. Nemanich
Kevin J. Linthicum;Thomas Gehrke;Darren B. Thomson;Eric P. Carlson
Thomas Gehrke;Kevin J. Linthicum;Robert F. Davis
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