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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 102 976 930 319 293 740 33850

Robert F. Davis publications per year

The chart shows the history of publications by Robert F. Davis between 1970 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Robert F. Davis published across 56 years, from 1970 to 2025, averaging 15 papers a year. Output peaked at 61 publications in 1998. 5 of the 840 publications appeared in the last two years.

No. of publications
20 40 60
Bar chart. Horizontal axis: year, 1970 to 2025. Vertical axis: number of publications, 0 to 61. Peak 61 publications in 1998. 1970: 1 publication 1971: 1 publication 1972: 4 publications 1973: 2 publications 1974: 0 publications 1975: 0 publications 1976: 0 publications 1977: 1 publication 1978: 8 publications 1979: 7 publications 1980: 8 publications 1981: 8 publications 1982: 5 publications 1983: 5 publications 1984: 7 publications 1985: 18 publications 1986: 15 publications 1987: 16 publications 1988: 27 publications 1989: 22 publications 1990: 24 publications 1991: 26 publications 1992: 22 publications 1993: 40 publications 1994: 24 publications 1995: 31 publications 1996: 47 publications 1997: 57 publications 1998: 61 publications 1999: 45 publications 2000: 37 publications 2001: 33 publications 2002: 30 publications 2003: 30 publications 2004: 21 publications 2005: 26 publications 2006: 12 publications 2007: 7 publications 2008: 4 publications 2009: 8 publications 2010: 7 publications 2011: 16 publications 2012: 8 publications 2013: 12 publications 2014: 7 publications 2015: 6 publications 2016: 3 publications 2017: 4 publications 2018: 8 publications 2019: 3 publications 2020: 6 publications 2021: 5 publications 2022: 3 publications 2023: 7 publications 2024: 4 publications 2025: 1 publication
1970 2025

840 publications in total across all disciplines

View publications per year as a table
Robert F. Davis: publications per year, 1970 to 2025
Year Publications
1970 1
1971 1
1972 4
1973 2
1974 0
1975 0
1976 0
1977 1
1978 8
1979 7
1980 8
1981 8
1982 5
1983 5
1984 7
1985 18
1986 15
1987 16
1988 27
1989 22
1990 24
1991 26
1992 22
1993 40
1994 24
1995 31
1996 47
1997 57
1998 61
1999 45
2000 37
2001 33
2002 30
2003 30
2004 21
2005 26
2006 12
2007 7
2008 4
2009 8
2010 7
2011 16
2012 8
2013 12
2014 7
2015 6
2016 3
2017 4
2018 8
2019 3
2020 6
2021 5
2022 3
2023 7
2024 4
2025 1
Total 840
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Robert F. Davis publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Robert F. Davis sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 730–749 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 740 publications — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38 740
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Robert F. Davis D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Robert F. Davis sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 102–103 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 102 D-Index — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85 102
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Research.com Recognitions

  • 2001 - Member of the National Academy of Engineering For contributions in the development of silicon carbide and group III-nitrides as practical electronic materials for devices.

Overview

Robert F. Davis is affiliated with Carnegie Mellon University in the United States. Their research primarily spans the fields of Materials Science and Energy, with a significant focus on subfields including Materials Chemistry, Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Mechanics of Materials, and Electrical and Electronic Engineering.

The main topics of their research include Ga2O3 and related materials, Advanced Photocatalysis Techniques, ZnO doping and properties, Boron and Carbon Nanomaterials Research, Metal and Thin Film Mechanics, Diamond and Carbon-based Materials Research, and Thermal properties of materials.

Among their frequent coauthors are Lisa M. Porter, Jingyu Tang, Kunyao Jiang, Matthew J. Cabral, and Philip M. Jean-Remy. Their publications are commonly found in venues such as Applied Physics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Journal of Applied Physics, arXiv (Cornell University), and IEEE Transactions on Electromagnetic Compatibility.

Recent papers by Robert F. Davis include:

  • Layered phase composition and microstructure of κ-Ga2O3-dominant heteroepitaxial films grown via MOCVD (2022, Journal of Applied Physics)
  • Characterization of Epitaxial β-(Al,Ga,In)2O3-Based Films and Applications as UV Photodetectors (2020, Journal of Electronic Materials)
  • Thermal stability and phase transformation of α-, κ(ε)-, and γ-Ga2O3 films under different ambient conditions (2024, Applied Physics Letters)
  • Mg and Al-induced phase transformation and stabilization of Ga2O3-based γ-phase spinels (2023, Applied Physics Letters)
  • Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3 (2024, APL Materials)

Robert F. Davis was awarded membership in the National Academy of Engineering in 2001 for contributions in the development of silicon carbide and group III-nitrides as practical electronic materials for devices.

Best Publications

  • Strain-related phenomena in GaN thin films

    C. Kisielowski;J. Krüger;S. Ruvimov;T. Suski

  • Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

    Ok-Hyun Nam;Michael D. Bremser;Tsvetanka S. Zheleva;Robert F. Davis

  • Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

    Tsvetanka S. Zheleva;Ok-Hyun Nam;Michael D. Bremser;Robert F. Davis

  • III-V nitrides for electronic and optoelectronic applications

    R.F. Davis

  • Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

    R.F. Davis;G. Kelner;M. Shur;J.W. Palmour

  • A critical review of ohmic and rectifying contacts for silicon carbide

    Lisa M. Porter;Robert F. Davis

  • METHOD FOR GROWING LARGE-SIZED SINGLE-POLYTYPE SILICON CARBIDE SINGLE CRYSTAL

    Davis Robert F;Carter Jr Calvin H;Hunter Charles E

  • Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy

    M. J. Paisley;Z. Sitar;J. B. Posthill;R. F. Davis

  • Cleaning of AlN and GaN surfaces

    S. W. King;J. P. Barnak;M. D. Bremser;K. M. Tracy

  • Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(0001̄)

    B. J. Coppa;R. F. Davis;R. J. Nemanich

  • Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

    Robert F. Davis;Ok-Hyun Nam;Tsvetanka Zheleva;Michael D. Bremser

  • Epitaxial Growth and Characterization of β ‐ SiC Thin Films

    P. Liaw;R. F. Davis

  • GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

    T. Warren Weeks;Michael D. Bremser;K. Shawn Ailey;Eric Carlson

  • Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

    Kevin J. Linthicum;Thomas Gehrke;Robert F. Davis;Darren B. Thomson

  • Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures

    Tsvetanka S. Zheleva;Scott A. Smith;Darren B. Thomson;Thomas Gehrke

  • Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates

    H. S. Kong;J. T. Glass;R. F. Davis

  • Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

    R.F. Davis;Z. Sitar;B.E. Williams;H.S. Kong

  • Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)

    M. C. Benjamin;Cheng Wang;R. F. Davis;R. J. Nemanich

  • Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

    Kevin J. Linthicum;Thomas Gehrke;Darren B. Thomson;Eric P. Carlson

  • Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby

    Thomas Gehrke;Kevin J. Linthicum;Robert F. Davis

Frequent Co-Authors

Robert Nemanich
Robert Nemanich Arizona State University
Kevin J. Linthicum
Kevin J. Linthicum MACOM (United States)
Zlatko Sitar
Zlatko Sitar North Carolina State University
Jeffrey T. Glass
Jeffrey T. Glass Duke University
Carsten Ronning
Carsten Ronning Friedrich Schiller University Jena
D. A. Shirley
D. A. Shirley University of California, Berkeley
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
John F. Muth
John F. Muth North Carolina State University
Michael Dudley
Michael Dudley Stony Brook University
Detlef Hommel
Detlef Hommel University of Wrocław

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