Kazumasa Hiramatsu

Overview

Best Publications

• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

  Hiroshi Amano;Masahiro Kito;Kazumasa Hiramatsu;Isamu Akasaki

  3010
  Citations

• Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

  Isamu Akasaki;Hiroshi Amano;Yasuo Koide;Kazumasa Hiramatsu

  1149
  Citations

• Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

  Kazumasa Hiramatsu;Katsuya Nishiyama;Masaru Onishi;Hiromitsu Mizutani

  563
  Citations

• Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

  K. Hiramatsu;S. Itoh;H. Amano;I. Akasaki

  472
  Citations

• Selective growth of wurtzite GaN and AlxGa1-xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

  Yoshiki Kato;Shota Kitamura;Kazumasa Hiramatsu;Nobuhiko Sawaki

  469
  Citations

• Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

  Hiroshi Amano;Isamu Akasaki;Kazumasa Hiramatsu;Norikatsu Koide

  417
  Citations

• Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED

  Isamu Akasaki;Hiroshi Amano;Masahiro Kito;Kazumasa Hiramatsu

  415
  Citations

• Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy

  P. Hacke;T. Detchprohm;K. Hiramatsu;N. Sawaki

  398
  Citations

• The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

  A. Watanabe;T. Takeuchi;K. Hirosawa;H. Amano

  384
  Citations

• Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain

  Theeradetch Detchprohm;Kazumasa Hiramatsu;Kenji Itoh;Isamu Akasaki

  379
  Citations

• Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III‐Nitrides: Effects of Reactor Pressure in MOVPE Growth

  K. Hiramatsu;K. Nishiyama;A. Motogaito;H. Miyake

  375
  Citations

• Analysis of deep levels in n‐type GaN by transient capacitance methods

  P. Hacke;T. Detchprohm;K. Hiramatsu;N. Sawaki

  359
  Citations

• Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

  T. Detchprohm;K. Hiramatsu;H. Amano;I. Akasaki

  353
  Citations

• Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

  Hideto Miyake;Chia-Hung Lin;Kenta Tokoro;Kazumasa Hiramatsu

  328
  Citations

• Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy

  Kazumasa Hiramatsu;Theeradetch Detchprohm;Isamu Akasaki

  309
  Citations

• Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE

  Hiroshi Amano;Masahiro Kitoh;Kazumasa Hiramatsu;Isamu Akasaki

  303
  Citations

• Verfahren und vorrichtung zur zuechtung von galliumnitrid aus der gasphase

  Katsuhide Manabe;Nobuo Okazaki;Isamu Akazaki;Kazumasa Hiramatsu

  283
  Citations

• Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

  Tetsuya Takeuchi;Hiroshi Amano;Kazumasa Hiramatsu;Nobuhiko Sawaki

  265
  Citations

• Growth of single crystal GaN substrate using hydride vapor phase epitaxy

  Kouichi Naniwae;Shigetoshi Itoh;Hiroshi Amano;Kenji Itoh

  257
  Citations

• Exciton fine structure in undoped GaN epitaxial films.

  D Volm;K Oettinger;T Streibl;D Kovalev

  245
  Citations