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Kazumasa Hiramatsu

Kazumasa Hiramatsu

D-Index & Metrics

Materials Science

D-Index
64
Citations
19068
World Ranking
5791
National Ranking
279

Kazumasa Hiramatsu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Kazumasa Hiramatsu sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 428 publications — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Kazumasa Hiramatsu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Kazumasa Hiramatsu sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 64 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Kazumasa Hiramatsu is affiliated with Mie University in Japan and has contributed extensively to the fields of Engineering and Materials Science. Their research spans several subfields, including Biomedical Engineering, Electronic, Optical and Magnetic Materials, Civil and Structural Engineering, Electrical and Electronic Engineering, and Surfaces, Coatings and Films.

Their main research topics include Plasmonic and Surface Plasmon Research, Metamaterials and Metasurfaces Applications, Thermal Radiation and Cooling Technologies, Advanced Fiber Optic Sensors, Optical Coatings and Gratings, Gold and Silver Nanoparticles Synthesis and Applications, and Photonic Crystals and Applications.

Hiramatsu has published in various venues, with notable frequent publications in Research Square (Research Square), Journal of the European Optical Society Rapid Publications, Applied Physics B, Plasmonics, and Optics and Photonics Journal.

Recent papers authored or coauthored by Hiramatsu cover diverse topics in plasmonics and optical materials. These include:

  • Fabrication of perfect plasmonic absorbers for blue and near-ultraviolet lights using double-layer wire-grid structures, 2021, Journal of the European Optical Society Rapid Publications
  • TM- and TE-polarization-selective narrowband perfect absorber for near-ultraviolet light using Fano resonance in an aluminum nanohole array structure, 2024, Applied Physics B
  • Fabrication and Operation Analysis of a Surface-Plasmon Sensor Using a Nonpropagating Mode, 2023, Plasmonics
  • Fabrication of Polarization Control Devices Using Metal Grating Structures, 2022, Optics and Photonics Journal
  • Fabrication and characterization of plasmonic band-stop filter using Ag grating, 2020, EPJ Web of Conferences

Their work frequently involves collaboration with several coauthors, including Atsushi Motogaito, Ryoga Tanaka, K. Akatsuka, Akitaka Harada, and Yukino Hayashi. Atsushi Motogaito appears as the most frequent coauthor, contributing to multiple publications.

Best Publications

  • P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

    Hiroshi Amano;Masahiro Kito;Kazumasa Hiramatsu;Isamu Akasaki

  • Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

    Isamu Akasaki;Hiroshi Amano;Yasuo Koide;Kazumasa Hiramatsu

  • Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

    Kazumasa Hiramatsu;Katsuya Nishiyama;Masaru Onishi;Hiromitsu Mizutani

  • Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

    K. Hiramatsu;S. Itoh;H. Amano;I. Akasaki

  • Selective growth of wurtzite GaN and AlxGa1-xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

    Yoshiki Kato;Shota Kitamura;Kazumasa Hiramatsu;Nobuhiko Sawaki

  • Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

    Hiroshi Amano;Isamu Akasaki;Kazumasa Hiramatsu;Norikatsu Koide

  • Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED

    Isamu Akasaki;Hiroshi Amano;Masahiro Kito;Kazumasa Hiramatsu

  • Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy

    P. Hacke;T. Detchprohm;K. Hiramatsu;N. Sawaki

  • The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

    A. Watanabe;T. Takeuchi;K. Hirosawa;H. Amano

  • Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain

    Theeradetch Detchprohm;Kazumasa Hiramatsu;Kenji Itoh;Isamu Akasaki

  • Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III‐Nitrides: Effects of Reactor Pressure in MOVPE Growth

    K. Hiramatsu;K. Nishiyama;A. Motogaito;H. Miyake

  • Analysis of deep levels in n‐type GaN by transient capacitance methods

    P. Hacke;T. Detchprohm;K. Hiramatsu;N. Sawaki

  • Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

    T. Detchprohm;K. Hiramatsu;H. Amano;I. Akasaki

  • Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

    Hideto Miyake;Chia-Hung Lin;Kenta Tokoro;Kazumasa Hiramatsu

  • Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy

    Kazumasa Hiramatsu;Theeradetch Detchprohm;Isamu Akasaki

  • Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE

    Hiroshi Amano;Masahiro Kitoh;Kazumasa Hiramatsu;Isamu Akasaki

  • Verfahren und vorrichtung zur zuechtung von galliumnitrid aus der gasphase

    Katsuhide Manabe;Nobuo Okazaki;Isamu Akazaki;Kazumasa Hiramatsu

  • Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

    Tetsuya Takeuchi;Hiroshi Amano;Kazumasa Hiramatsu;Nobuhiko Sawaki

  • Growth of single crystal GaN substrate using hydride vapor phase epitaxy

    Kouichi Naniwae;Shigetoshi Itoh;Hiroshi Amano;Kenji Itoh

  • Exciton fine structure in undoped GaN epitaxial films.

    D Volm;K Oettinger;T Streibl;D Kovalev

Frequent Co-Authors

Nobuhiko Sawaki
Nobuhiko Sawaki Aichi Institute of Technology
Hiroshi Amano
Hiroshi Amano Nagoya University
Theeradetch Detchprohm
Theeradetch Detchprohm Georgia Institute of Technology
Yahachi Saito
Yahachi Saito Nagoya University
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg
Christian Thomsen
Christian Thomsen Technical University of Berlin
Tamotsu Hashizume
Tamotsu Hashizume Hokkaido University
Bernard Gil
Bernard Gil University of Montpellier
Bruno K. Meyer
Bruno K. Meyer University of Giessen

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