Nobuhiko Sawaki

Nobuhiko Sawaki publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Nobuhiko Sawaki sits on this spectrum.

Nobuhiko Sawaki D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Nobuhiko Sawaki sits on this spectrum.

Overview

Best Publications

• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

  H. Amano;N. Sawaki;I. Akasaki;Y. Toyoda

  3354
  Citations

• Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

  Isamu Akasaki;Hiroshi Amano;Yasuo Koide;Kazumasa Hiramatsu

  1149
  Citations

• Selective growth of wurtzite GaN and AlxGa1-xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

  Yoshiki Kato;Shota Kitamura;Kazumasa Hiramatsu;Nobuhiko Sawaki

  469
  Citations

• Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

  Hiroshi Amano;Isamu Akasaki;Kazumasa Hiramatsu;Norikatsu Koide

  417
  Citations

• Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy

  P. Hacke;T. Detchprohm;K. Hiramatsu;N. Sawaki

  398
  Citations

• Analysis of deep levels in n‐type GaN by transient capacitance methods

  P. Hacke;T. Detchprohm;K. Hiramatsu;N. Sawaki

  359
  Citations

• Energy band‐gap bowing parameter in an AlxGa1−x N alloy

  Y. Koide;H. Itoh;M. R. H. Khan;K. Hiramatu

  302
  Citations

• Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

  Tetsuya Takeuchi;Hiroshi Amano;Kazumasa Hiramatsu;Nobuhiko Sawaki

  265
  Citations

• Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy.

  Shota Kitamura;Kazumasa Hiramatsu;Nobuhiko Sawaki

  243
  Citations

• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization

  K. Hiramatsu;Y. Kawaguchi;M. Shimizu;N. Sawaki

  207
  Citations

• Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy

  F. Bertram;T. Riemann;J. Christen;A. Kaschner

  200
  Citations

• Deep levels in the upper band-gap region of lightly Mg-doped GaN

  P. Hacke;H. Nakayama;T. Detchprohm;K. Hiramatsu

  170
  Citations

• Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy

  Y. Honda;Y. Kuroiwa;M. Yamaguchi;N. Sawaki

  170
  Citations

• Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy

  Kazumasa Hiramatsu;Hidetada Matsushima;Takumi Shibata;Yasutoshi Kawagachi

  164
  Citations

• Effect of aln buffer layer on algan/α-al2o3heteroepitaxial growth by metalorganic vapor phase epitaxy

  Yasuo Koide;Nobuo Itoh;Kenji Itoh;Nobuhiko Sawaki

  157
  Citations

• Surface plasmon-enhanced photoluminescence from a single quantum well

  N. E. Hecker;R. A. Höpfel;N. Sawaki;T. Maier

  157
  Citations

• Defect structure in selective area growth GaN pyramid on (111)Si substrate

  Shigeyasu Tanaka;Yasutoshi Kawaguchi;Nobuhiko Sawaki;Michio Hibino

  141
  Citations

• Catalyst free MBE-VLS growth of GaAs nanowires on (111)Si substrate

  J. H. Paek;T. Nishiwaki;M. Yamaguchi;N. Sawaki

  134
  Citations

• Growth of (1 1̄ 0 1) GaN on a 7-degree off-oriented (0 0 1)Si substrate by selective MOVPE

  Yoshio Honda;Norifumi Kameshiro;Masahito Yamaguchi;Nobuhiko Sawaki

  131
  Citations

• Electron beam effects on blue luminescence of zinc-doped GaN

  Hiroshi Amano;Isamu Akasaki;Takahiro Kozawa;Kazumasa Hiramatsu

  118
  Citations