Nobuhiko Sawaki

Overview

Best Publications

• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

  H. Amano;N. Sawaki;I. Akasaki;Y. Toyoda

  3354
  Citations

• Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

  Isamu Akasaki;Hiroshi Amano;Yasuo Koide;Kazumasa Hiramatsu

  1149
  Citations

• Selective growth of wurtzite GaN and AlxGa1-xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

  Yoshiki Kato;Shota Kitamura;Kazumasa Hiramatsu;Nobuhiko Sawaki

  469
  Citations

• Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

  Hiroshi Amano;Isamu Akasaki;Kazumasa Hiramatsu;Norikatsu Koide

  417
  Citations

• Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy

  P. Hacke;T. Detchprohm;K. Hiramatsu;N. Sawaki

  398
  Citations

• Analysis of deep levels in n‐type GaN by transient capacitance methods

  P. Hacke;T. Detchprohm;K. Hiramatsu;N. Sawaki

  359
  Citations

• Energy band‐gap bowing parameter in an AlxGa1−x N alloy

  Y. Koide;H. Itoh;M. R. H. Khan;K. Hiramatu

  302
  Citations

• Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

  Tetsuya Takeuchi;Hiroshi Amano;Kazumasa Hiramatsu;Nobuhiko Sawaki

  265
  Citations

• Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy.

  Shota Kitamura;Kazumasa Hiramatsu;Nobuhiko Sawaki

  243
  Citations

• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization

  K. Hiramatsu;Y. Kawaguchi;M. Shimizu;N. Sawaki

  207
  Citations

• Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy

  F. Bertram;T. Riemann;J. Christen;A. Kaschner

  200
  Citations

• Deep levels in the upper band-gap region of lightly Mg-doped GaN

  P. Hacke;H. Nakayama;T. Detchprohm;K. Hiramatsu

  170
  Citations

• Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy

  Y. Honda;Y. Kuroiwa;M. Yamaguchi;N. Sawaki

  170
  Citations

• Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy

  Kazumasa Hiramatsu;Hidetada Matsushima;Takumi Shibata;Yasutoshi Kawagachi

  164
  Citations

• Effect of aln buffer layer on algan/α-al2o3heteroepitaxial growth by metalorganic vapor phase epitaxy

  Yasuo Koide;Nobuo Itoh;Kenji Itoh;Nobuhiko Sawaki

  157
  Citations

• Surface plasmon-enhanced photoluminescence from a single quantum well

  N. E. Hecker;R. A. Höpfel;N. Sawaki;T. Maier

  157
  Citations

• Defect structure in selective area growth GaN pyramid on (111)Si substrate

  Shigeyasu Tanaka;Yasutoshi Kawaguchi;Nobuhiko Sawaki;Michio Hibino

  141
  Citations

• Catalyst free MBE-VLS growth of GaAs nanowires on (111)Si substrate

  J. H. Paek;T. Nishiwaki;M. Yamaguchi;N. Sawaki

  134
  Citations

• Growth of (1 1̄ 0 1) GaN on a 7-degree off-oriented (0 0 1)Si substrate by selective MOVPE

  Yoshio Honda;Norifumi Kameshiro;Masahito Yamaguchi;Nobuhiko Sawaki

  131
  Citations

• Electron beam effects on blue luminescence of zinc-doped GaN

  Hiroshi Amano;Isamu Akasaki;Takahiro Kozawa;Kazumasa Hiramatsu

  118
  Citations