Jürgen Christen

Overview

Best Publications

• Bound exciton and donor–acceptor pair recombinations in ZnO

  B. K. Meyer;H. Alves;D. M. Hofmann;W. Kriegseis

  2002
  Citations

• Ultranarrow Luminescence Lines from Single Quantum Dots.

  M. Grundmann;J. Christen;N. N. Ledentsov;J. Bohrer

  979
  Citations

• Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques

  M. A. Herman;D. Bimberg;J. Christen

  394
  Citations

• Line shapes of intersubband and excitonic recombination in quantum wells: Influence of final-state interaction, statistical broadening, and momentum conservation

  J Christen;D Bimberg

  243
  Citations

• Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy

  Th. Gruber;C. Kirchner;R. Kling;F. Reuss

  228
  Citations

• MOVPE growth of GaN on Si(1 1 1) substrates

  Armin Dadgar;M. Poschenrieder;J. Bläsing;O. Contreras

  219
  Citations

• Scanning cathodoluminescence microscopy: A unique approach to atomic‐scale characterization of heterointerfaces and imaging of semiconductor inhomogeneities

  J. Christen;M. Grundmann;D. Bimberg

  203
  Citations

• Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces

  D. Bimberg;J. Christen;T. Fukunaga;H. Nakashima

  199
  Citations

• InAs/GaAs quantum dots radiative recombination from zero‐dimensional states

  M. Grundmann;N. N. Ledentsov;R. Heitz;L. Eckey

  184
  Citations

• Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1−xN layers

  A. Bell;S. Srinivasan;C. Plumlee;H. Omiya

  182
  Citations

• Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

  A Dadgar;F Schulze;M Wienecke;A Gadanecz

  179
  Citations

• Gallium gradients in Cu(In,Ga)Se2 thin‐film solar cells

  Wolfram Witte;Daniel Abou-Ras;Karsten Albe;Gottfried H. Bauer

  173
  Citations

• Reduction of stress at the initial stages of GaN growth on Si(111)

  A. Dadgar;M. Poschenrieder;A. Reiher;J. Bläsing

  161
  Citations

• Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

  C. Hums;J. Bläsing;A. Dadgar;A. Diez

  151
  Citations

• Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

  O. Contreras;O. Contreras;Fernando Ponce;J. Christen;A. Dadgar

  149
  Citations

• Optical investigations of AlGaN on GaN epitaxial films

  G. Steude;B. K. Meyer;A. Göldner;A. Hoffmann

  148
  Citations

• Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V‐grooved substrates

  M. Walther;E. Kapon;J. Christen;D. M. Hwang

  146
  Citations

• Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer

  A. Dadgar;J. Christen;T. Riemann;S. Richter

  143
  Citations

• Localization induced electron‐hole transition rate enhancement in GaAs quantum wells

  J. Christen;D. Bimberg;A. Steckenborn;G. Weimann

  132
  Citations

• Fabrication, Self-Assembly, and Properties of Ultrathin AlN/GaN Porous Crystalline Nanomembranes: Tubes, Spirals, and Curved Sheets

  Yongfeng Mei;Dominic J Thurmer;Christoph Deneke;Suwit Kiravittaya

  129
  Citations