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D-Index & Metrics

Materials Science

D-Index
55
Citations
12406
World Ranking
8522
National Ranking
484

Jürgen Christen publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jürgen Christen sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 342 publications — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jürgen Christen D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jürgen Christen sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 55 D-Index — 34th percentile

34% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Jürgen Christen is affiliated with Otto-von-Guericke University Magdeburg in Germany. Their research primarily spans the fields of Physics and Astronomy, Engineering, and Materials Science, with a particular focus on subfields such as Condensed Matter Physics, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Materials Chemistry, and Electronic, Optical and Magnetic Materials.

The scientist's work extensively covers topics related to GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, ZnO doping and properties, Ga2O3 and related materials, Metal and Thin Film Mechanics, Semiconductor materials and devices, and Nanowire Synthesis and Applications.

Notable recent publications by Jürgen Christen include:

  • Color-Tunable 3D InGaN/GaN Multi-Quantum-Well Light-Emitting-Diode Based on Microfacet Emission and Programmable Driving Power Supply (2020, Advanced Optical Materials)
  • Sputter Epitaxy of AlN and GaN on Si(111) (2022, physica status solidi (a))
  • Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy (2021, Journal of Crystal Growth)
  • Nitride Semiconductors (2023, physica status solidi (b))
  • Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates (2024, Applied Physics Letters)

Throughout their career, Jürgen Christen has published repeatedly in several journals, including:

  • Applied Physics Letters
  • physica status solidi (a)
  • Journal of Crystal Growth
  • Advanced Optical Materials
  • Photonics Research

They frequently collaborate with the following co-authors:

  • Gordon Schmidt
  • Peter Veit
  • F. Bertram
  • A. Strittmatter
  • A. Dadgar

Best Publications

  • Bound exciton and donor–acceptor pair recombinations in ZnO

    B. K. Meyer;H. Alves;D. M. Hofmann;W. Kriegseis

  • Ultranarrow Luminescence Lines from Single Quantum Dots.

    M. Grundmann;J. Christen;N. N. Ledentsov;J. Bohrer

  • Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques

    M. A. Herman;D. Bimberg;J. Christen

  • Line shapes of intersubband and excitonic recombination in quantum wells: Influence of final-state interaction, statistical broadening, and momentum conservation

    J Christen;D Bimberg

  • Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy

    Th. Gruber;C. Kirchner;R. Kling;F. Reuss

  • MOVPE growth of GaN on Si(1 1 1) substrates

    Armin Dadgar;M. Poschenrieder;J. Bläsing;O. Contreras

  • Scanning cathodoluminescence microscopy: A unique approach to atomic‐scale characterization of heterointerfaces and imaging of semiconductor inhomogeneities

    J. Christen;M. Grundmann;D. Bimberg

  • Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces

    D. Bimberg;J. Christen;T. Fukunaga;H. Nakashima

  • InAs/GaAs quantum dots radiative recombination from zero‐dimensional states

    M. Grundmann;N. N. Ledentsov;R. Heitz;L. Eckey

  • Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1−xN layers

    A. Bell;S. Srinivasan;C. Plumlee;H. Omiya

  • Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

    A Dadgar;F Schulze;M Wienecke;A Gadanecz

  • Gallium gradients in Cu(In,Ga)Se2 thin‐film solar cells

    Wolfram Witte;Daniel Abou-Ras;Karsten Albe;Gottfried H. Bauer

  • Reduction of stress at the initial stages of GaN growth on Si(111)

    A. Dadgar;M. Poschenrieder;A. Reiher;J. Bläsing

  • Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

    C. Hums;J. Bläsing;A. Dadgar;A. Diez

  • Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

    O. Contreras;O. Contreras;Fernando Ponce;J. Christen;A. Dadgar

  • Optical investigations of AlGaN on GaN epitaxial films

    G. Steude;B. K. Meyer;A. Göldner;A. Hoffmann

  • Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V‐grooved substrates

    M. Walther;E. Kapon;J. Christen;D. M. Hwang

  • Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer

    A. Dadgar;J. Christen;T. Riemann;S. Richter

  • Localization induced electron‐hole transition rate enhancement in GaAs quantum wells

    J. Christen;D. Bimberg;A. Steckenborn;G. Weimann

  • Fabrication, Self-Assembly, and Properties of Ultrathin AlN/GaN Porous Crystalline Nanomembranes: Tubes, Spirals, and Curved Sheets

    Yongfeng Mei;Dominic J Thurmer;Christoph Deneke;Suwit Kiravittaya

Frequent Co-Authors

Alois Krost
Alois Krost Otto-von-Guericke University Magdeburg
Armin Dadgar
Armin Dadgar Otto-von-Guericke University Magdeburg
Jürgen Bläsing
Jürgen Bläsing Otto-von-Guericke University Magdeburg
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
Axel Hoffmann
Axel Hoffmann University of Illinois at Urbana-Champaign
Marius Grundmann
Marius Grundmann Leipzig University
Bruno K. Meyer
Bruno K. Meyer University of Giessen
Fernando Ponce
Fernando Ponce Arizona State University
Margit Zacharias
Margit Zacharias University of Freiburg
Christian Thomsen
Christian Thomsen Technical University of Berlin

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