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Materials Science

D-Index
68
Citations
21632
World Ranking
4772
National Ranking
280

Overview

Andreas Waag is affiliated with Technische Universität Braunschweig in Germany. Their research primarily spans the fields of Engineering and Physics and Astronomy, with significant contributions in the subfields of Electrical and Electronic Engineering, Condensed Matter Physics, Biomedical Engineering, Atomic and Molecular Physics and Optics, and Materials Chemistry.

The main research topics addressed by Waag include GaN-based semiconductor devices and materials, semiconductor materials and devices, ZnO doping and properties, semiconductor quantum structures and devices, Ga2O3 and related materials, nanowire synthesis and applications, and near-field optical microscopy.

Waag has authored multiple papers focusing on semiconductor materials and device fabrication techniques, with some recent publications as follows:

  • "Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips" (2021), published in ACS Applied Electronic Materials
  • "Wafer-scale transfer route for top-down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique" (2021), published in Microsystems & Nanoengineering
  • "Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization" (2020), published in Microsystems & Nanoengineering
  • "Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures" (2020), published in Nature Communications
  • "Size-Dependent Electroluminescence and Current-Voltage Measurements of Blue InGaN/GaN µLEDs down to the Submicron Scale" (2021), published in Nanomaterials

The frequent coauthors who have collaborated with Waag include Joan Daniel Prades, Christoph Margenfeld, Á. Diéguez, Steffen Bornemann, and Joan Canals. This indicates a collaborative research network contributing to the development of semiconductor and optoelectronic technologies.

Waag's work appears regularly in journals such as:

  • Journal of Applied Physics
  • Optics Express
  • Physical Review B
  • Applied Physics Letters
  • physica status solidi (b)

Best Publications

  • Injection and detection of a spin-polarized current in a light-emitting diode

    R. Fiederling;M. Keim;G. Reuscher;W. Ossau

  • Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers.

    M Willander;O Nur;Q X Zhao;L L Yang

  • Zinc oxide : from fundamental properties towards novel applications

    C. F. Klingshirn;B. K. Meyer;Andreas Waag;Axel Hoffmann

  • GaN based nanorods for solid state lighting

    Shunfeng Li;Andreas Waag

  • Zinc Oxide 120

    Claus F. Klingshirn;Bruno K. Meyer;Andreas Waag;Axel Hoffmann

  • Donor–acceptor pair transitions in ZnO substrate material

    K. Thonke;Th. Gruber;N. Teofilov;R. Schönfelder

  • ZnMgO epilayers and ZnO–ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region

    Th. Gruber;C. Kirchner;R. Kling;F. Reuss

  • Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano- and micro-LEDs

    Hutomo Suryo Wasisto;Joan Daniel Prades;Jan Gülink;Andreas Waag

  • Molecular‐beam epitaxy of beryllium‐chalcogenide‐based thin films and quantum‐well structures

    A. Waag;F. Fischer;H. J. Lugauer;Th. Litz

  • Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy

    Th. Gruber;C. Kirchner;R. Kling;F. Reuss

  • Electron and hole g factors measured by spin-flip Raman scattering in CdTe/Cd 1 − x Mg x Te single quantum wells

    A. A. Sirenko;T. Ruf;M. Cardona;D. R. Yakovlev

  • Epitaxial growth and optical transitions of cubic GaN films

    D. Schikora;M. Hankeln;D. J. As;K. Lischka

  • Airborne engineered nanoparticle mass sensor based on a silicon resonant cantilever

    Hutomo Suryo Wasisto;Stephan Merzsch;Andreas Waag;Erik Uhde

  • Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

    W. Bergbauer;W. Bergbauer;M. Strassburg;Ch Kölper;N. Linder

  • The nanorod approach: GaN NanoLEDs for solid state lighting

    Andreas Waag;Xue Wang;Sönke Fündling;Johannes Ledig

  • Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods

    S. F. Li;S. Fuendling;X. Wang;S. Merzsch

  • Growth of MgTe and Cd1−xMgxTe thin films by molecular beam epitaxy

    A. Waag;H. Heinke;S. Scholl;C.R. Becker

  • Laser diodes based on beryllium-chalcogenides

    A. Waag;F. Fischer;K. Schüll;T. Baron

  • Kinetic Exchange between the Conduction Band Electrons and Magnetic Ions in Quantum-Confined Structures

    I. A. Merkulov;D. R. Yakovlev;D. R. Yakovlev;A. Keller;W. Ossau

  • Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires

    T. Voss;C. Bekeny;L. Wischmeier;H. Gafsi

Frequent Co-Authors

Franz Dieter Fischer
Franz Dieter Fischer University of Leoben
Laurens W. Molenkamp
Laurens W. Molenkamp University of Würzburg
Ernst O. Göbel
Ernst O. Göbel Physikalisch-Technische Bundesanstalt
Tunga Salthammer
Tunga Salthammer Fraunhofer Society
Manfred Bayer
Manfred Bayer TU Dortmund University
Alfred Forchel
Alfred Forchel University of Würzburg
Achim Trampert
Achim Trampert Paul Drude Institute for Solid State Electronics
Detlef Hommel
Detlef Hommel University of Wrocław
Thomas Weimann
Thomas Weimann Physikalisch-Technische Bundesanstalt
Bo Monemar
Bo Monemar Linköping University

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