Oliver Brandt

Oliver Brandt publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Oliver Brandt sits on this spectrum.

Oliver Brandt D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Oliver Brandt sits on this spectrum.

Overview

Best Publications

• Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

  P. Waltereit;O. Brandt;A. Trampert;H. T. Grahn

  2190
  Citations

• Colossal magnetic moment of Gd in GaN.

  S. Dhar;O. Brandt;M. Ramsteiner;V. F. Sapega

  451
  Citations

• Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy

  Sandip Ghosh;P. Waltereit;O. Brandt;H. T. Grahn

  306
  Citations

• Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications.

  Steffen Breuer;Carsten Pfüller;Timur Flissikowski;Oliver Brandt

  260
  Citations

• X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films

  V. M. Kaganer;O. Brandt;A. Trampert;K. H. Ploog

  257
  Citations

• Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy

  S. Dhar;O. Brandt;A. Trampert;L. Däweritz

  251
  Citations

• Direct measurement of local lattice distortions in strained layer structures by HREM

  R. Bierwolf;M. Hohenstein;F. Phillipp;O. Brandt

  250
  Citations

• Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy.

  O. Brandt;H. Yang;B. Jenichen;Y. Suzuki

  215
  Citations

• Direct comparison of catalyst-free and catalyst-induced GaN nanowires

  Caroline Chèze;Lutz Geelhaar;Oliver Brandt;Walter M. Weber

  207
  Citations

• Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence.

  J Menniger;U Jahn;O Brandt;H Yang

  195
  Citations

• Impact of nucleation conditions on the structural and optical properties of M-plane GaN(11̄00) grown on γ-LiAlO2

  Yue Jun Sun;Oliver Brandt;Uwe Jahn;Tian Yu Liu

  191
  Citations

• High p‐type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant

  Oliver Brandt;Hui Yang;Helmar Kostial;Klaus H. Ploog

  188
  Citations

• Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K

  S. Dhar;L. Pérez;O. Brandt;A. Trampert

  182
  Citations

• Growth of M-plane GaN(1 1̄ 0 0) on γ-LiAlO2(1 0 0)

  P Waltereit;O Brandt;M Ramsteiner;R Uecker

  182
  Citations

• Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy

  M. Giehler;M. Ramsteiner;O. Brandt;H. Yang

  162
  Citations

• Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001)

  P. Waltereit;O. Brandt;A. Trampert;M. Ramsteiner

  160
  Citations

• Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

  Uwe Jahn;Jonas Lähnemann;Carsten Pfüller;Oliver Brandt

  157
  Citations

• Luminescence associated with stacking faults in GaN

  Jonas Lähnemann;Uwe Jahn;Oliver Brandt;Timur Flissikowski

  154
  Citations

• Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy

  O. Brandt;R. Muralidharan;P. Waltereit;A. Thamm

  152
  Citations

• Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

  Oliver Brandt;Carsten Pfüller;Caroline Chèze;Lutz Geelhaar

  150
  Citations

• Observation of spin-glass behavior in homogeneous (Ga, Mn)N layers grown by reactive molecular-beam epitaxy

  S. Dhar;O. Brandt;A. Trampert;K. J. Friedland

  150
  Citations