Oliver Brandt

Overview

Best Publications

• Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

  P. Waltereit;O. Brandt;A. Trampert;H. T. Grahn

  2190
  Citations

• Colossal magnetic moment of Gd in GaN.

  S. Dhar;O. Brandt;M. Ramsteiner;V. F. Sapega

  451
  Citations

• Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy

  Sandip Ghosh;P. Waltereit;O. Brandt;H. T. Grahn

  306
  Citations

• Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications.

  Steffen Breuer;Carsten Pfüller;Timur Flissikowski;Oliver Brandt

  260
  Citations

• X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films

  V. M. Kaganer;O. Brandt;A. Trampert;K. H. Ploog

  257
  Citations

• Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy

  S. Dhar;O. Brandt;A. Trampert;L. Däweritz

  251
  Citations

• Direct measurement of local lattice distortions in strained layer structures by HREM

  R. Bierwolf;M. Hohenstein;F. Phillipp;O. Brandt

  250
  Citations

• Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy.

  O. Brandt;H. Yang;B. Jenichen;Y. Suzuki

  215
  Citations

• Direct comparison of catalyst-free and catalyst-induced GaN nanowires

  Caroline Chèze;Lutz Geelhaar;Oliver Brandt;Walter M. Weber

  207
  Citations

• Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence.

  J Menniger;U Jahn;O Brandt;H Yang

  195
  Citations

• Impact of nucleation conditions on the structural and optical properties of M-plane GaN(11̄00) grown on γ-LiAlO2

  Yue Jun Sun;Oliver Brandt;Uwe Jahn;Tian Yu Liu

  191
  Citations

• High p‐type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant

  Oliver Brandt;Hui Yang;Helmar Kostial;Klaus H. Ploog

  188
  Citations

• Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K

  S. Dhar;L. Pérez;O. Brandt;A. Trampert

  182
  Citations

• Growth of M-plane GaN(1 1̄ 0 0) on γ-LiAlO2(1 0 0)

  P Waltereit;O Brandt;M Ramsteiner;R Uecker

  182
  Citations

• Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy

  M. Giehler;M. Ramsteiner;O. Brandt;H. Yang

  162
  Citations

• Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001)

  P. Waltereit;O. Brandt;A. Trampert;M. Ramsteiner

  160
  Citations

• Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

  Uwe Jahn;Jonas Lähnemann;Carsten Pfüller;Oliver Brandt

  157
  Citations

• Luminescence associated with stacking faults in GaN

  Jonas Lähnemann;Uwe Jahn;Oliver Brandt;Timur Flissikowski

  154
  Citations

• Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy

  O. Brandt;R. Muralidharan;P. Waltereit;A. Thamm

  152
  Citations

• Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

  Oliver Brandt;Carsten Pfüller;Caroline Chèze;Lutz Geelhaar

  150
  Citations

• Observation of spin-glass behavior in homogeneous (Ga, Mn)N layers grown by reactive molecular-beam epitaxy

  S. Dhar;O. Brandt;A. Trampert;K. J. Friedland

  150
  Citations