D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 59 Citations 10,335 273 World Ranking 4648 National Ranking 283

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Laser
  • Optics

The scientist’s investigation covers issues in Optoelectronics, Photoluminescence, Condensed matter physics, Molecular beam epitaxy and Nanowire. His work carried out in the field of Optoelectronics brings together such families of science as Quantum well, Laser and Optics. His Laser course of study focuses on Gallium arsenide and Diode.

His Photoluminescence research is multidisciplinary, incorporating perspectives in Luminescence, Exciton, Laser linewidth and Carrier lifetime. His biological study spans a wide range of topics, including Crystallography, Stacking and Electroluminescence. His research in Nanowire intersects with topics in Cathodoluminescence, Wurtzite crystal structure and Nucleation.

His most cited work include:

  • Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy (392 citations)
  • Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts (194 citations)
  • Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content (192 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, Molecular beam epitaxy, Condensed matter physics, Quantum well and Laser. His Optoelectronics study combines topics in areas such as Substrate and Optics. His biological study spans a wide range of topics, including Crystallography, Heterojunction and Raman spectroscopy, Analytical chemistry.

Henning Riechert has researched Condensed matter physics in several fields, including Laser linewidth and Atomic physics. The Laser study combines topics in areas such as Wavelength and Diode. Henning Riechert combines subjects such as Luminescence, Molecular physics and Exciton with his study of Photoluminescence.

He most often published in these fields:

  • Optoelectronics (49.51%)
  • Molecular beam epitaxy (32.79%)
  • Condensed matter physics (24.92%)

What were the highlights of his more recent work (between 2012-2018)?

  • Molecular beam epitaxy (32.79%)
  • Optoelectronics (49.51%)
  • Nanowire (17.70%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Molecular beam epitaxy, Optoelectronics, Nanowire, Condensed matter physics and Nanotechnology. His research in Molecular beam epitaxy intersects with topics in Crystallography, Raman spectroscopy, Analytical chemistry, Morphology and Substrate. Henning Riechert interconnects Phonon, Wurtzite crystal structure, Photoluminescence and X-ray photoelectron spectroscopy in the investigation of issues within Raman spectroscopy.

Optoelectronics and Yield are commonly linked in his work. The study incorporates disciplines such as Doping, Nucleation, Electroluminescence, Quantum well and Transmission electron microscopy in addition to Nanowire. His studies in Condensed matter physics integrate themes in fields like Scattering, Semiconductor, Atomic physics, GeSbTe and Crystal.

Between 2012 and 2018, his most popular works were:

  • Coaxial multishell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates. (90 citations)
  • Formation of high-quality quasi-free-standing bilayer graphene on SiC(0 0 0 1) by oxygen intercalation upon annealing in air (89 citations)
  • Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001) (83 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Photon
  • Optics

Henning Riechert spends much of his time researching Molecular beam epitaxy, Optoelectronics, Nanowire, Epitaxy and Nanotechnology. His Molecular beam epitaxy research includes elements of Transmission electron microscopy, Electrochemistry, GeSbTe, Substrate and Vacancy defect. His Optoelectronics study combines topics from a wide range of disciplines, such as Quantum well and Nanocrystalline material.

Henning Riechert has included themes like Raman scattering, Doping, Nucleation and Photoluminescence, Analytical chemistry in his Nanowire study. The various areas that Henning Riechert examines in his Analytical chemistry study include Photocurrent and Anode. His studies deal with areas such as Crystallography, Lattice and Surface reconstruction as well as Epitaxy.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

B. Heying;R. Averbeck;L. F. Chen;E. Haus.
Journal of Applied Physics (2000)

574 Citations

Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

Walter M. Weber;Lutz Geelhaar;Andrew P. Graham;Eugen Unger.
Nano Letters (2006)

296 Citations

Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content

M. Hetterich;M. D. Dawson;A. Yu. Egorov;D. Bernklau.
Applied Physics Letters (2000)

265 Citations

Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications.

Steffen Breuer;Carsten Pfüller;Timur Flissikowski;Oliver Brandt.
Nano Letters (2011)

234 Citations

Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature

G. Steinle;H. Riechert;A.Yu. Egorov.
Electronics Letters (2001)

231 Citations

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

Caroline Chèze;Lutz Geelhaar;Oliver Brandt;Walter M. Weber.
Nano Research (2010)

202 Citations

8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m

D.A. Livshits;A.Yu. Egorov;H. Riechert.
Electronics Letters (2000)

195 Citations

A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-/spl mu/m GaInNAs-based quantum-well lasers

R. Fehse;S. Tomic;A.R. Adams;S.J. Sweeney.
IEEE Journal of Selected Topics in Quantum Electronics (2002)

195 Citations

Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

Vincent Consonni;M. Knelangen;L. Geelhaar;A. Trampert.
Physical Review B (2010)

185 Citations

Development of InGaAsN-based 1.3 μm VCSELs

Henning Riechert;Arun Ramakrishnan;Gunther Steinle.
Semiconductor Science and Technology (2002)

182 Citations

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