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Henning Riechert

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 68 4965 4804 290 280 386 13875

Henning Riechert publications per year

The chart shows the history of publications by Henning Riechert between 1982 and 2020, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Henning Riechert published across 39 years, from 1982 to 2020, averaging 10.5 papers a year. Output peaked at 37 publications in 2012. 3 of the 409 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1982 to 2020. Vertical axis: number of publications, 0 to 37. Peak 37 publications in 2012. 1982: 1 publication 1983: 3 publications 1984: 3 publications 1985: 3 publications 1986: 0 publications 1987: 1 publication 1988: 0 publications 1989: 0 publications 1990: 3 publications 1991: 6 publications 1992: 3 publications 1993: 3 publications 1994: 1 publication 1995: 3 publications 1996: 9 publications 1997: 10 publications 1998: 8 publications 1999: 10 publications 2000: 14 publications 2001: 21 publications 2002: 27 publications 2003: 25 publications 2004: 15 publications 2005: 15 publications 2006: 8 publications 2007: 13 publications 2008: 13 publications 2009: 14 publications 2010: 23 publications 2011: 31 publications 2012: 37 publications 2013: 21 publications 2014: 22 publications 2015: 13 publications 2016: 15 publications 2017: 9 publications 2018: 3 publications 2019: 2 publications 2020: 1 publication
1982 2020

409 publications in total across all disciplines

View publications per year as a table
Henning Riechert: publications per year, 1982 to 2020
Year Publications
1982 1
1983 3
1984 3
1985 3
1986 0
1987 1
1988 0
1989 0
1990 3
1991 6
1992 3
1993 3
1994 1
1995 3
1996 9
1997 10
1998 8
1999 10
2000 14
2001 21
2002 27
2003 25
2004 15
2005 15
2006 8
2007 13
2008 13
2009 14
2010 23
2011 31
2012 37
2013 21
2014 22
2015 13
2016 15
2017 9
2018 3
2019 2
2020 1
Total 409
Download as CSV

Henning Riechert publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Henning Riechert sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 370–389 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 386 publications — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356 386
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
Download as CSV

Henning Riechert D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Henning Riechert sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 68–69 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 68 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469 68
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Henning Riechert is affiliated with Infineon Technologies in Germany and focuses on research in the fields of Materials Science and Physics and Astronomy. Their work primarily intersects the study of electronic, optical, and magnetic materials, with a particular emphasis on materials chemistry and condensed matter physics.

The research topics addressed by Riechert include Ga2O3 and related materials, ZnO doping and properties, and GaN-based semiconductor devices and materials. These topics reflect a concentration on semiconductor materials and their properties, relevant for advanced electronic and optoelectronic applications.

One notable recent publication by Riechert is titled "Protection Mechanism against Photocorrosion of GaN Photoanodes Provided by NiO Thin Layers," published in 2020 in the journal Solar RRL. This paper contributes to understanding photoelectrochemical stability and material protection strategies for GaN-based photoanodes.

Frequent coauthors collaborating with Riechert include:

  • Jumpei Kamimura
  • Melanie Budde
  • Peter Bogdanoff
  • Carsten Tschammer
  • Fatwa F. Abdi

Riechert's research contributions are published predominantly in the venue Solar RRL. This reflects an engagement with specialized journals focusing on solar energy research and material science aspects of photovoltaic and photoelectrochemical devices.

Best Publications

  • Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

    B. Heying;R. Averbeck;L. F. Chen;E. Haus

  • Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

    Walter M. Weber;Lutz Geelhaar;Andrew P. Graham;Eugen Unger

  • Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content

    M. Hetterich;M. D. Dawson;A. Yu. Egorov;D. Bernklau

  • Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications.

    Steffen Breuer;Carsten Pfüller;Timur Flissikowski;Oliver Brandt

  • Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature

    G. Steinle;H. Riechert;A.Yu. Egorov

  • Direct comparison of catalyst-free and catalyst-induced GaN nanowires

    Caroline Chèze;Lutz Geelhaar;Oliver Brandt;Walter M. Weber

  • Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

    Vincent Consonni;M. Knelangen;L. Geelhaar;A. Trampert

  • 8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m

    D.A. Livshits;A.Yu. Egorov;H. Riechert

  • Development of InGaAsN-based 1.3 μm VCSELs

    Henning Riechert;Arun Ramakrishnan;Gunther Steinle

  • Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data

    M Schuster;P O Gervais;B Jobst;W Hösler

  • The nanorod approach: GaN NanoLEDs for solid state lighting

    Andreas Waag;Xue Wang;Sönke Fündling;Johannes Ledig

  • Theoretical and experimental analysis of 1.3-/spl mu/m InGaAsN/GaAs lasers

    S. Tomic;E.P. O'Reilly;R. Fehse;S.J. Sweeney

  • Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy

    G. Koblmueller;R. Averbeck;L. Geelhaar;H. Riechert

  • Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

    F. Fromm;M. H. Oliveira Jr;Alejandro Molina-Sanchez;M. Hundhausen

  • Formation of high-quality quasi-free-standing bilayer graphene on SiC(0 0 0 1) by oxygen intercalation upon annealing in air

    Myriano H. Oliveira;Timo Schumann;Felix Fromm;Roland Koch

  • Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

    Uwe Jahn;Jonas Lähnemann;Carsten Pfüller;Oliver Brandt

  • Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

    Vincent Consonni;M. Hanke;M. Knelangen;L. Geelhaar

  • Recombination mechanisms in GaInNAs/GaAs multiple quantum wells

    A. Kaschner;T. Lüttgert;H. Born;A. Hoffmann

  • Low threshold InGaAsN/GaAs lasers beyond 1500 nm

    G. Jaschke;R. Averbeck;L. Geelhaar;H. Riechert

  • Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

    Oliver Brandt;Carsten Pfüller;Caroline Chèze;Lutz Geelhaar

  • Data transmission up to 10 Gbit/s with 1.3 [micro sign]m wavelength InGaAsN VCSELs

    G Steinle;F Mederer;M Kicherer;R Michalzik

Frequent Co-Authors

Lutz Geelhaar
Lutz Geelhaar Paul Drude Institute for Solid State Electronics
Oliver Brandt
Oliver Brandt Paul Drude Institute for Solid State Electronics
Achim Trampert
Achim Trampert Paul Drude Institute for Solid State Electronics
Raffaella Calarco
Raffaella Calarco Leibniz Institute for Neurobiology
Weimin Chen
Weimin Chen Linköping University
Paul Fons
Paul Fons Keio University
Andreas Waag
Andreas Waag Technische Universität Braunschweig
Gregor Koblmüller
Gregor Koblmüller Technical University of Munich
Wolfgang Stolz
Wolfgang Stolz Philipp University of Marburg
Axel Hoffmann
Axel Hoffmann University of Illinois at Urbana-Champaign

External Links

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Best Scientists Citing Henning Riechert

James S. Speck

James S. Speck

University of California, Santa Barbara

Publications: 72

Vladimir G. Dubrovskii

Vladimir G. Dubrovskii

Saint Petersburg State University

Publications: 71

Achim Trampert

Achim Trampert

Paul Drude Institute for Solid State Electronics

Publications: 68

Oliver Brandt

Oliver Brandt

Paul Drude Institute for Solid State Electronics

Publications: 60

M. Pessa

M. Pessa

Tampere University

Publications: 52

Lutz Geelhaar

Lutz Geelhaar

Paul Drude Institute for Solid State Electronics

Publications: 49

Raffaella Calarco

Raffaella Calarco

Leibniz Institute for Neurobiology

Publications: 46

Wolfgang Stolz

Wolfgang Stolz

Philipp University of Marburg

Publications: 46

Alfred Forchel

Alfred Forchel

University of Würzburg

Publications: 45

Seth R. Bank

Seth R. Bank

The University of Texas at Austin

Publications: 41

Thomas Mikolajick

Thomas Mikolajick

TU Dresden

Publications: 40

James S. Harris

James S. Harris

Stanford University

Publications: 39

Andreas Waag

Andreas Waag

Technische Universität Braunschweig

Publications: 39

Stephan W. Koch

Stephan W. Koch

Philipp University of Marburg

Publications: 38

Gregor Koblmüller

Gregor Koblmüller

Technical University of Munich

Publications: 38

Mark A. Wistey

Mark A. Wistey

Texas State University

Publications: 36

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