The scientist’s investigation covers issues in Optoelectronics, Photoluminescence, Condensed matter physics, Molecular beam epitaxy and Nanowire. His work carried out in the field of Optoelectronics brings together such families of science as Quantum well, Laser and Optics. His Laser course of study focuses on Gallium arsenide and Diode.
His Photoluminescence research is multidisciplinary, incorporating perspectives in Luminescence, Exciton, Laser linewidth and Carrier lifetime. His biological study spans a wide range of topics, including Crystallography, Stacking and Electroluminescence. His research in Nanowire intersects with topics in Cathodoluminescence, Wurtzite crystal structure and Nucleation.
His scientific interests lie mostly in Optoelectronics, Molecular beam epitaxy, Condensed matter physics, Quantum well and Laser. His Optoelectronics study combines topics in areas such as Substrate and Optics. His biological study spans a wide range of topics, including Crystallography, Heterojunction and Raman spectroscopy, Analytical chemistry.
Henning Riechert has researched Condensed matter physics in several fields, including Laser linewidth and Atomic physics. The Laser study combines topics in areas such as Wavelength and Diode. Henning Riechert combines subjects such as Luminescence, Molecular physics and Exciton with his study of Photoluminescence.
His primary scientific interests are in Molecular beam epitaxy, Optoelectronics, Nanowire, Condensed matter physics and Nanotechnology. His research in Molecular beam epitaxy intersects with topics in Crystallography, Raman spectroscopy, Analytical chemistry, Morphology and Substrate. Henning Riechert interconnects Phonon, Wurtzite crystal structure, Photoluminescence and X-ray photoelectron spectroscopy in the investigation of issues within Raman spectroscopy.
Optoelectronics and Yield are commonly linked in his work. The study incorporates disciplines such as Doping, Nucleation, Electroluminescence, Quantum well and Transmission electron microscopy in addition to Nanowire. His studies in Condensed matter physics integrate themes in fields like Scattering, Semiconductor, Atomic physics, GeSbTe and Crystal.
Henning Riechert spends much of his time researching Molecular beam epitaxy, Optoelectronics, Nanowire, Epitaxy and Nanotechnology. His Molecular beam epitaxy research includes elements of Transmission electron microscopy, Electrochemistry, GeSbTe, Substrate and Vacancy defect. His Optoelectronics study combines topics from a wide range of disciplines, such as Quantum well and Nanocrystalline material.
Henning Riechert has included themes like Raman scattering, Doping, Nucleation and Photoluminescence, Analytical chemistry in his Nanowire study. The various areas that Henning Riechert examines in his Analytical chemistry study include Photocurrent and Anode. His studies deal with areas such as Crystallography, Lattice and Surface reconstruction as well as Epitaxy.
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Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
B. Heying;R. Averbeck;L. F. Chen;E. Haus.
Journal of Applied Physics (2000)
Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts
Walter M. Weber;Lutz Geelhaar;Andrew P. Graham;Eugen Unger.
Nano Letters (2006)
Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
M. Hetterich;M. D. Dawson;A. Yu. Egorov;D. Bernklau.
Applied Physics Letters (2000)
Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications.
Steffen Breuer;Carsten Pfüller;Timur Flissikowski;Oliver Brandt.
Nano Letters (2011)
Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature
G. Steinle;H. Riechert;A.Yu. Egorov.
Electronics Letters (2001)
Direct comparison of catalyst-free and catalyst-induced GaN nanowires
Caroline Chèze;Lutz Geelhaar;Oliver Brandt;Walter M. Weber.
Nano Research (2010)
8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m
D.A. Livshits;A.Yu. Egorov;H. Riechert.
Electronics Letters (2000)
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-/spl mu/m GaInNAs-based quantum-well lasers
R. Fehse;S. Tomic;A.R. Adams;S.J. Sweeney.
IEEE Journal of Selected Topics in Quantum Electronics (2002)
Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius
Vincent Consonni;M. Knelangen;L. Geelhaar;A. Trampert.
Physical Review B (2010)
Development of InGaAsN-based 1.3 μm VCSELs
Henning Riechert;Arun Ramakrishnan;Gunther Steinle.
Semiconductor Science and Technology (2002)
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Paul Drude Institute for Solid State Electronics
Paul Drude Institute for Solid State Electronics
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