Henning Riechert

Overview

Best Publications

• Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

  B. Heying;R. Averbeck;L. F. Chen;E. Haus

  616
  Citations

• Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

  Walter M. Weber;Lutz Geelhaar;Andrew P. Graham;Eugen Unger

  313
  Citations

• Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content

  M. Hetterich;M. D. Dawson;A. Yu. Egorov;D. Bernklau

  267
  Citations

• Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications.

  Steffen Breuer;Carsten Pfüller;Timur Flissikowski;Oliver Brandt

  260
  Citations

• Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature

  G. Steinle;H. Riechert;A.Yu. Egorov

  235
  Citations

• Direct comparison of catalyst-free and catalyst-induced GaN nanowires

  Caroline Chèze;Lutz Geelhaar;Oliver Brandt;Walter M. Weber

  207
  Citations

• Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

  Vincent Consonni;M. Knelangen;L. Geelhaar;A. Trampert

  205
  Citations

• 8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m

  D.A. Livshits;A.Yu. Egorov;H. Riechert

  195
  Citations

• Development of InGaAsN-based 1.3 μm VCSELs

  Henning Riechert;Arun Ramakrishnan;Gunther Steinle

  193
  Citations

• Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data

  M Schuster;P O Gervais;B Jobst;W Hösler

  182
  Citations

• The nanorod approach: GaN NanoLEDs for solid state lighting

  Andreas Waag;Xue Wang;Sönke Fündling;Johannes Ledig

  179
  Citations

• Theoretical and experimental analysis of 1.3-/spl mu/m InGaAsN/GaAs lasers

  S. Tomic;E.P. O'Reilly;R. Fehse;S.J. Sweeney

  178
  Citations

• Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy

  G. Koblmueller;R. Averbeck;L. Geelhaar;H. Riechert

  164
  Citations

• Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

  F. Fromm;M. H. Oliveira Jr;Alejandro Molina-Sanchez;M. Hundhausen

  161
  Citations

• Formation of high-quality quasi-free-standing bilayer graphene on SiC(0 0 0 1) by oxygen intercalation upon annealing in air

  Myriano H. Oliveira;Timo Schumann;Felix Fromm;Roland Koch

  157
  Citations

• Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

  Uwe Jahn;Jonas Lähnemann;Carsten Pfüller;Oliver Brandt

  157
  Citations

• Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

  Vincent Consonni;M. Hanke;M. Knelangen;L. Geelhaar

  156
  Citations

• Recombination mechanisms in GaInNAs/GaAs multiple quantum wells

  A. Kaschner;T. Lüttgert;H. Born;A. Hoffmann

  156
  Citations

• Low threshold InGaAsN/GaAs lasers beyond 1500 nm

  G. Jaschke;R. Averbeck;L. Geelhaar;H. Riechert

  150
  Citations

• Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

  Oliver Brandt;Carsten Pfüller;Caroline Chèze;Lutz Geelhaar

  150
  Citations

• Data transmission up to 10 Gbit/s with 1.3 [micro sign]m wavelength InGaAsN VCSELs

  G Steinle;F Mederer;M Kicherer;R Michalzik

  143
  Citations