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Paul Fons

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 56 2086 2000 71 67 274 11273
Materials Science 65 5645 5459 272 266 429 14744

Paul Fons publications per year

The chart shows the history of publications by Paul Fons between 1988 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Paul Fons published across 38 years, from 1988 to 2025, averaging 12 papers a year. Output peaked at 23 publications in 2014. 14 of the 457 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 1988 to 2025. Vertical axis: number of publications, 0 to 23. Peak 23 publications in 2014. 1988: 3 publications 1989: 1 publication 1990: 1 publication 1991: 3 publications 1992: 0 publications 1993: 8 publications 1994: 5 publications 1995: 10 publications 1996: 22 publications 1997: 10 publications 1998: 7 publications 1999: 11 publications 2000: 19 publications 2001: 17 publications 2002: 14 publications 2003: 18 publications 2004: 14 publications 2005: 16 publications 2006: 19 publications 2007: 20 publications 2008: 10 publications 2009: 18 publications 2010: 11 publications 2011: 14 publications 2012: 17 publications 2013: 15 publications 2014: 23 publications 2015: 12 publications 2016: 9 publications 2017: 16 publications 2018: 16 publications 2019: 16 publications 2020: 17 publications 2021: 17 publications 2022: 6 publications 2023: 8 publications 2024: 11 publications 2025: 3 publications
1988 2025

457 publications in total across all disciplines

View publications per year as a table
Paul Fons: publications per year, 1988 to 2025
Year Publications
1988 3
1989 1
1990 1
1991 3
1992 0
1993 8
1994 5
1995 10
1996 22
1997 10
1998 7
1999 11
2000 19
2001 17
2002 14
2003 18
2004 14
2005 16
2006 19
2007 20
2008 10
2009 18
2010 11
2011 14
2012 17
2013 15
2014 23
2015 12
2016 9
2017 16
2018 16
2019 16
2020 17
2021 17
2022 6
2023 8
2024 11
2025 3
Total 457
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Paul Fons publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Paul Fons sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 274–293 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 274 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335 274
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Paul Fons D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Paul Fons sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 56 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 56 D-Index — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111 56
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Paul Fons is affiliated with Keio University in Japan and focuses their research on materials science and engineering, particularly within the chemistry and electronic engineering subfields. Their work concentrates heavily on phase-change materials and chalcogenides, which intersect with the study of chalcogenide semiconductor thin films and two-dimensional (2D) materials.

Their research interests also include quantum dots synthesis and properties, transition metal oxide nanomaterials, topological materials and phenomena, and perovskite materials and applications. This diverse range reflects a broad engagement with advanced functional materials and nanotechnology relevant to electronic and optical applications.

Paul Fons has published extensively in various scientific journals, with some notable recent papers including:

  • "Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices" (2021) in ACS Applied Nano Materials
  • "High-quality sputter-grown layered chalcogenide films for phase change memory applications and beyond" (2020) in Journal of Physics D Applied Physics
  • "Ultrafast dynamics of the low frequency shear phonon in 1T'-MoTe2" (2020) in Applied Physics Letters
  • "Recent developments concerning the sputter growth of chalcogenide-based layered phase-change materials" (2021) in Materials Science in Semiconductor Processing
  • "NbTe4 Phase-Change Material: Breaking the Phase-Change Temperature Balance in 2D Van der Waals Transition-Metal Binary Chalcogenide" (2023) in Advanced Materials

The most frequent publication venues for their work include Applied Physics Letters, physica status solidi (RRL) - Rapid Research Letters, The Journal of Physical Chemistry C, physica status solidi (b), and ACS Nano. These journals reflect a strong emphasis on condensed matter physics, material synthesis, and nanostructured functional materials.

Collaborations form an important aspect of their scientific contribution. Frequent co-authors include Yuta Saito, Alexander V. Kolobov, Shogo Hatayama, Yuji Sutou, and Yi Shuang. These partnerships highlight active engagement with researchers focusing on layered materials, phase-change technologies, and nanoscale phenomena.

Paul Fons's research spans multiple subfields such as materials chemistry, electrical and electronic engineering, atomic and molecular physics and optics, polymers and plastics, and biomedical engineering, demonstrating interdisciplinary approaches to material development and characterization.

Best Publications

  • Understanding the phase-change mechanism of rewritable optical media.

    Alexander V. Kolobov;Paul Fons;Anatoly I. Frenkel;Alexei L. Ankudinov

  • Interfacial phase-change memory

    R. E. Simpson;P. Fons;A. V. Kolobov;T. Fukaya

  • ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications

    K. Matsubara;P. Fons;K. Iwata;A. Yamada

  • Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5

    R. E. Simpson;M. Krbal;P. Fons;A. V. Kolobov

  • Uniaxial locked epitaxy of ZnO on the a face of sapphire

    P. Fons;K. Iwata;A. Yamada;K. Matsubara

  • Growth of high-quality epitaxial ZnO films on α-Al2O3

    P Fons;K Iwata;S Niki;A Yamada

  • Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE

    K Iwata;P Fons;A Yamada;K Matsubara

  • Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials

    K.S. Andrikopoulos;K.S. Andrikopoulos;S.N. Yannopoulos;A.V. Kolobov;A.V. Kolobov;P. Fons

  • Distortion-triggered loss of long-range order in solids with bonding energy hierarchy

    A.V. Kolobov;M. Krbal;P. Fons;J. Tominaga

  • Na-induced variations in the structural, optical, and electrical properties of Cu(In,Ga)Se2 thin films

    Shogo Ishizuka;Akimasa Yamada;Muhammad Monirul Islam;Hajime Shibata

  • Ferroelectric Order Control of the Dirac‐Semimetal Phase in GeTe‐Sb2Te3 Superlattices

    J. Tominaga;A. V. Kolobov;P. Fons;T. Nakano

  • Band-gap modified Al-doped Zn1-xMgxO transparent conducting films deposited by pulsed laser deposition

    K. Matsubara;H. Tampo;H. Shibata;A. Yamada

  • Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy

    K. Nakahara;H. Takasu;P. Fons;A. Yamada

  • ZnO growth on Si by radical source MBE

    K Iwata;P Fons;S Niki;A Yamada

  • Band gap energies of bulk, thin-film, and epitaxial layers of CuInSe2 and CuGaSe2

    S. Chichibu;S. Chichibu;T. Mizutani;K. Murakami;T. Shioda

  • Fabrication of wide-gap Cu(In1−xGax)Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness

    S. Ishizuka;K. Sakurai;A. Yamada;K. Matsubara

  • Two-dimensional electron gas in Zn polar ZnMgO∕ZnO heterostructures grown by radical source molecular beam epitaxy

    H. Tampo;H. Shibata;K. Matsubara;A. Yamada

  • Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO.

    Paul Fons;Hiroshi Tampo;Alexander V. Kolobov;Masataka Ohkubo

  • Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures

    H. Tampo;H. Shibata;K. Maejima;A. Yamada

  • Local structure of crystallized GeTe films

    A. V. Kolobov;J. Tominaga;P. Fons;T. Uruga

Frequent Co-Authors

Junji Tominaga
Junji Tominaga National Institute of Advanced Industrial Science and Technology
Alexander V. Kolobov
Alexander V. Kolobov Herzen University
Shigeru Niki
Shigeru Niki National Institute of Advanced Industrial Science and Technology
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Henning Riechert
Henning Riechert Infineon Technologies (Germany)
Keisuke Kobayashi
Keisuke Kobayashi Japan Atomic Energy Agency
Raffaella Calarco
Raffaella Calarco Leibniz Institute for Neurobiology
Yuji Sutou
Yuji Sutou Tohoku University
Stephen R. Elliott
Stephen R. Elliott University of Oxford
Julien Haines
Julien Haines University of Montpellier

External Links

Personal website of Paul Fons Google Scholar page

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Related Online Degrees & Career Pathways

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Many professionals balancing work and study benefit from flexible learning formats. Degree programs for working adults offer accelerated paths that fit busy schedules while maintaining academic rigor, enabling quicker advancement in the engineering field.

Instructional design also presents an interesting crossover, especially for engineers focused on training and development. Earning a master's in instructional design allows professionals to create effective technical training programs and educational materials.

Furthermore, competency based master's degree programs emphasize mastering specific skills over traditional credit hours, ideal for engineers seeking targeted expertise without unnecessary coursework.

Best Scientists Citing Paul Fons

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Publications: 70

Shigeru Niki

Shigeru Niki

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Publications: 54

Songlin Feng

Songlin Feng

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Publications: 41

Raffaella Calarco

Raffaella Calarco

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Publications: 40

Xiangshui Miao

Xiangshui Miao

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Publications: 37

Susanne Siebentritt

Susanne Siebentritt

University of Luxembourg

Publications: 34

Christian A. Kaufmann

Christian A. Kaufmann

Helmholtz-Zentrum Berlin für Materialien und Energie

Publications: 28

Wei Zhang

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Publications: 26

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Atsushi Tsukazaki

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