World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
56
Citations
11273
World Ranking
2086
National Ranking
71

Materials Science

D-Index
65
Citations
14744
World Ranking
5647
National Ranking
272

Overview

Paul Fons is affiliated with Keio University in Japan and focuses their research on materials science and engineering, particularly within the chemistry and electronic engineering subfields. Their work concentrates heavily on phase-change materials and chalcogenides, which intersect with the study of chalcogenide semiconductor thin films and two-dimensional (2D) materials.

Their research interests also include quantum dots synthesis and properties, transition metal oxide nanomaterials, topological materials and phenomena, and perovskite materials and applications. This diverse range reflects a broad engagement with advanced functional materials and nanotechnology relevant to electronic and optical applications.

Paul Fons has published extensively in various scientific journals, with some notable recent papers including:

  • "Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices" (2021) in ACS Applied Nano Materials
  • "High-quality sputter-grown layered chalcogenide films for phase change memory applications and beyond" (2020) in Journal of Physics D Applied Physics
  • "Ultrafast dynamics of the low frequency shear phonon in 1T'-MoTe2" (2020) in Applied Physics Letters
  • "Recent developments concerning the sputter growth of chalcogenide-based layered phase-change materials" (2021) in Materials Science in Semiconductor Processing
  • "NbTe4 Phase-Change Material: Breaking the Phase-Change Temperature Balance in 2D Van der Waals Transition-Metal Binary Chalcogenide" (2023) in Advanced Materials

The most frequent publication venues for their work include Applied Physics Letters, physica status solidi (RRL) - Rapid Research Letters, The Journal of Physical Chemistry C, physica status solidi (b), and ACS Nano. These journals reflect a strong emphasis on condensed matter physics, material synthesis, and nanostructured functional materials.

Collaborations form an important aspect of their scientific contribution. Frequent co-authors include Yuta Saito, Alexander V. Kolobov, Shogo Hatayama, Yuji Sutou, and Yi Shuang. These partnerships highlight active engagement with researchers focusing on layered materials, phase-change technologies, and nanoscale phenomena.

Paul Fons's research spans multiple subfields such as materials chemistry, electrical and electronic engineering, atomic and molecular physics and optics, polymers and plastics, and biomedical engineering, demonstrating interdisciplinary approaches to material development and characterization.

Best Publications

  • Understanding the phase-change mechanism of rewritable optical media.

    Alexander V. Kolobov;Paul Fons;Anatoly I. Frenkel;Alexei L. Ankudinov

  • Interfacial phase-change memory

    R. E. Simpson;P. Fons;A. V. Kolobov;T. Fukaya

  • ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications

    K. Matsubara;P. Fons;K. Iwata;A. Yamada

  • Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5

    R. E. Simpson;M. Krbal;P. Fons;A. V. Kolobov

  • Uniaxial locked epitaxy of ZnO on the a face of sapphire

    P. Fons;K. Iwata;A. Yamada;K. Matsubara

  • Growth of high-quality epitaxial ZnO films on α-Al2O3

    P Fons;K Iwata;S Niki;A Yamada

  • Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE

    K Iwata;P Fons;A Yamada;K Matsubara

  • Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials

    K.S. Andrikopoulos;K.S. Andrikopoulos;S.N. Yannopoulos;A.V. Kolobov;A.V. Kolobov;P. Fons

  • Distortion-triggered loss of long-range order in solids with bonding energy hierarchy

    A.V. Kolobov;M. Krbal;P. Fons;J. Tominaga

  • Na-induced variations in the structural, optical, and electrical properties of Cu(In,Ga)Se2 thin films

    Shogo Ishizuka;Akimasa Yamada;Muhammad Monirul Islam;Hajime Shibata

  • Ferroelectric Order Control of the Dirac‐Semimetal Phase in GeTe‐Sb2Te3 Superlattices

    J. Tominaga;A. V. Kolobov;P. Fons;T. Nakano

  • Band-gap modified Al-doped Zn1-xMgxO transparent conducting films deposited by pulsed laser deposition

    K. Matsubara;H. Tampo;H. Shibata;A. Yamada

  • Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy

    K. Nakahara;H. Takasu;P. Fons;A. Yamada

  • ZnO growth on Si by radical source MBE

    K Iwata;P Fons;S Niki;A Yamada

  • Band gap energies of bulk, thin-film, and epitaxial layers of CuInSe2 and CuGaSe2

    S. Chichibu;S. Chichibu;T. Mizutani;K. Murakami;T. Shioda

  • Fabrication of wide-gap Cu(In1−xGax)Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness

    S. Ishizuka;K. Sakurai;A. Yamada;K. Matsubara

  • Two-dimensional electron gas in Zn polar ZnMgO∕ZnO heterostructures grown by radical source molecular beam epitaxy

    H. Tampo;H. Shibata;K. Matsubara;A. Yamada

  • Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO.

    Paul Fons;Hiroshi Tampo;Alexander V. Kolobov;Masataka Ohkubo

  • Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures

    H. Tampo;H. Shibata;K. Maejima;A. Yamada

  • Local structure of crystallized GeTe films

    A. V. Kolobov;J. Tominaga;P. Fons;T. Uruga

Frequent Co-Authors

Junji Tominaga
Junji Tominaga National Institute of Advanced Industrial Science and Technology
Alexander V. Kolobov
Alexander V. Kolobov Herzen University
Shigeru Niki
Shigeru Niki National Institute of Advanced Industrial Science and Technology
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Henning Riechert
Henning Riechert Infineon Technologies (Germany)
Keisuke Kobayashi
Keisuke Kobayashi Japan Atomic Energy Agency
Raffaella Calarco
Raffaella Calarco Leibniz Institute for Neurobiology
Yuji Sutou
Yuji Sutou Tohoku University
Stephen R. Elliott
Stephen R. Elliott University of Oxford
Julien Haines
Julien Haines University of Montpellier

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For students pursuing Electronics and Electrical Engineering, expanding skills through complementary online degrees can boost career prospects. A bachelor's degree in project management is a valuable option, equipping graduates to lead complex engineering projects efficiently.

Many professionals balancing work and study benefit from flexible learning formats. Degree programs for working adults offer accelerated paths that fit busy schedules while maintaining academic rigor, enabling quicker advancement in the engineering field.

Instructional design also presents an interesting crossover, especially for engineers focused on training and development. Earning a master's in instructional design allows professionals to create effective technical training programs and educational materials.

Furthermore, competency based master's degree programs emphasize mastering specific skills over traditional credit hours, ideal for engineers seeking targeted expertise without unnecessary coursework.

Best Scientists Citing Paul Fons

Trending Scientists

Recently Published Articles