World's Best Scientists 2026 revealed!
Atsushi Tsukazaki

Atsushi Tsukazaki

D-Index & Metrics

Materials Science

D-Index
66
Citations
18265
World Ranking
5271
National Ranking
255

Atsushi Tsukazaki publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Atsushi Tsukazaki sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 323 publications — 65th percentile

65% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Atsushi Tsukazaki D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Atsushi Tsukazaki sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 66 D-Index — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Atsushi Tsukazaki is a researcher affiliated with Tohoku University in Japan, specializing in physics and materials science. Their work extensively covers areas in atomic and molecular physics, optics, and materials chemistry, with particular attention to condensed matter physics and electronic, optical, and magnetic materials.

Their research primarily focuses on topological materials and phenomena, electronic and structural properties of oxides, and advanced condensed matter physics. These areas are complemented by investigations into graphene applications, magnetic properties of thin films, quantum and electron transport phenomena, and two-dimensional materials.

Tsukazaki has contributed to a significant number of publications, with their frequent publication venues including:

  • arXiv (Cornell University)
  • Physical Review B
  • Physical Review Materials
  • Applied Physics Letters
  • Nature Communications

Among their recent papers are these notable works:

  • "Giant magneto-optical responses in magnetic Weyl semimetal Co3Sn2S2," 2020, Nature Communications
  • "Giant anomalous Hall effect from spin-chirality scattering in a chiral magnet," 2021, Nature Communications
  • "Competing correlated states around the zero-field Wigner crystallization transition of electrons in two dimensions," 2021, Nature Materials
  • "Current-induced switching of proximity-induced ferromagnetic surface states in a topological insulator," 2021, Nature Communications
  • "Quantum anomalous Hall effect with a permanent magnet defines a quantum resistance standard," 2021, Nature Physics

Repeated collaborations define part of their research network. Frequent co-authors include:

  • M. Kawasaki
  • Yoshinori Tokura
  • Kohei Fujiwara
  • Ryutaro Yoshimi
  • Kei Takahashi

This collaboration network supports work that advances understanding in electronic phenomena and magnetic materials, reinforcing interdisciplinary approaches typical in their fields of study.

Best Publications

  • Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

    Atsushi Tsukazaki;Akira Ohtomo;Takeyoshi Onuma;Makoto Ohtani

  • Magnetic topological insulators

    Yoshinori Tokura;Yoshinori Tokura;Kenji Yasuda;Atsushi Tsukazaki

  • Quantum Hall Effect in Polar Oxide Heterostructures

    Atsushi Tsukazaki;A. Ohtomo;A. Ohtomo;Tomohiro Kita;Y. Ohno

  • Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator

    J. G. Checkelsky;J. G. Checkelsky;R. Yoshimi;A. Tsukazaki;K. S. Takahashi

  • High‐Density Carrier Accumulation in ZnO Field‐Effect Transistors Gated by Electric Double Layers of Ionic Liquids

    Hongtao Yuan;Hidekazu Shimotani;Atsushi Tsukazaki;Akira Ohtomo

  • Blue Light-Emitting Diode Based on ZnO

    Atsushi Tsukazaki;Masashi Kubota;Akira Ohtomo;Takeyoshi Onuma

  • Robust formation of Skyrmions and topological Hall effect anomaly in epitaxial thin films of MnSi.

    Yufan Li;Yufan Li;N. Kanazawa;X. Z. Yu;A. Tsukazaki

  • A magnetic heterostructure of topological insulators as a candidate for an axion insulator

    M. Mogi;M. Kawamura;R. Yoshimi;A. Tsukazaki

  • Observation of the fractional quantum Hall effect in an oxide

    A. Tsukazaki;A. Tsukazaki;S. Akasaka;K. Nakahara;Y. Ohno

  • Electric-field-induced superconductivity in electrochemically etched ultrathin FeSe films on SrTiO 3 and MgO

    J. Shiogai;Y. Ito;T. Mitsuhashi;T. Nojima

  • Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

    T. Koida;S. F. Chichibu;A. Uedono;A. Tsukazaki

  • Electrostatic and Electrochemical Nature of Liquid-Gated Electric-Double-Layer Transistors Based on Oxide Semiconductors

    Hongtao Yuan;Hidekazu Shimotani;Jianting Ye;Sungjae Yoon

  • Nitrogen doped MgxZn1−xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

    K. Nakahara;S. Akasaka;H. Yuji;K. Tamura

  • Pulsed laser deposition of thin films and superlattices based on ZnO

    Akira Ohtomo;Atsushi Tsukazaki

  • Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga

    T. Makino;Y. Segawa;S. Yoshida;A. Tsukazaki

  • Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect

    M. Mogi;R. Yoshimi;A. Tsukazaki;A. Tsukazaki;K. Yasuda

  • Quantum Hall effect in a bulk antiferromagnet EuMnBi2 with magnetically confined two-dimensional Dirac fermions

    Hidetoshi Masuda;Hideaki Sakai;Masashi Tokunaga;Yuichi Yamasaki

  • Insulator-to-metal transition in ZnO by electric double layer gating

    Hidekazu Shimotani;Haruhiko Asanuma;Atsushi Tsukazaki;Akira Ohtomo

  • Gallium concentration dependence of room-temperature near-bandedge luminescence in n-type ZnO:Ga

    T. Makino;Y. Segawa;S. Yoshida;A. Tsukazaki

  • Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator

    Kenji Yasuda;Atsushi Tsukazaki;Ryutaro Yoshimi;Kei Takahashi

  • Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator

    K. Yasuda;A. Tsukazaki;R. Yoshimi;K. S. Takahashi

  • Quantum Hall effect on top and bottom surface states of topological insulator (Bi1−xSbx)2Te3 films

    R. Yoshimi;A. Tsukazaki;A. Tsukazaki;Y. Kozuka;J. Falson

  • Tailoring tricolor structure of magnetic topological insulator for robust axion insulator

    Masataka Mogi;Minoru Kawamura;Atsushi Tsukazaki;Ryutaro Yoshimi

  • Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect

    M. Mogi;R. Yoshimi;A. Tsukazaki;A. Tsukazaki;K. Yasuda

Frequent Co-Authors

Masashi Kawasaki
Masashi Kawasaki University of Tokyo
Yoshinori Tokura
Yoshinori Tokura University of Tokyo
Akira Ohtomo
Akira Ohtomo Tokyo Institute of Technology
Taka-hisa Arima
Taka-hisa Arima University of Tokyo
Hideomi Koinuma
Hideomi Koinuma Tokyo Institute of Technology
Naoto Nagaosa
Naoto Nagaosa University of Tokyo
Tomoteru Fukumura
Tomoteru Fukumura Tohoku University
Yoshihiro Iwasa
Yoshihiro Iwasa University of Tokyo
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University

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