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D-Index & Metrics

Materials Science

D-Index
47
Citations
7597
World Ranking
11192
National Ranking
2630

Emmanouil Kioupakis publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Emmanouil Kioupakis sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 224 publications — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Emmanouil Kioupakis D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Emmanouil Kioupakis sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 47 D-Index — 15th percentile

15% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Emmanouil Kioupakis is a researcher affiliated with the University of Michigan-Ann Arbor in the United States. Their work spans multiple fields including Materials Science, Engineering, and Physics and Astronomy. They have contributed extensively to subfields such as Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, and Atomic and Molecular Physics, and Optics.

The scope of their research covers various topics prominently focused on semiconductor materials and devices. Main topics of their work include:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Electronic and Structural Properties of Oxides
  • Semiconductor Quantum Structures and Devices
  • 2D Materials and Applications

Kioupakis has published numerous papers through reputable venues, with notable publication outlets including Applied Physics Letters, arXiv (Cornell University), Physical Review B, npj Computational Materials, and Physical Review Letters. The frequency of their publications in these venues is as follows:

  • Applied Physics Letters (23 publications)
  • arXiv (Cornell University) (15 publications)
  • Physical Review B (7 publications)
  • npj Computational Materials (3 publications)
  • Physical Review Letters (3 publications)

Among recent research articles, several significant papers demonstrate the development of theoretical and applied understanding in semiconductor physics and materials engineering. These include:

  • Electron-phonon physics from first principles using the EPW code, 2023, npj Computational Materials
  • Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2, 2021, Applied Physics Letters
  • Monolayer GaN excitonic deep ultraviolet light emitting diodes, 2020, Applied Physics Letters
  • III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis, 2022, Progress in Quantum Electronics
  • Semiconducting High-Entropy Chalcogenide Alloys with Ambi-ionic Entropy Stabilization and Ambipolar Doping, 2020, Chemistry of Materials

Kioupakis collaborates frequently with a set of coauthors who have contributed together on numerous projects. Their most common collaborators include:

  • Zetian Mi
  • Nick Pant
  • Xiao Zhang
  • John T. Heron
  • Kyle Bushick

Best Publications

  • Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

    Emmanouil Kioupakis;Patrick Rinke;Kris T. Delaney;Chris G. Van de Walle

  • Electrochemical Window of the Li-Ion Solid Electrolyte Li7La3Zr2O12

    Travis Thompson;Seungho Yu;Logan Williams;Robert D. Schmidt

  • Anisotropic Spin Transport and Strong Visible-Light Absorbance in Few-Layer SnSe and GeSe.

    Guangsha Shi;Emmanouil Kioupakis

  • Phase Stability and Transport Mechanisms in Antiperovskite Li3OCl and Li3OBr Superionic Conductors

    Alexandra Emly;Emmanouil Kioupakis;Anton Van der Ven;Anton Van der Ven

  • Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

    Emmanouil Kioupakis;Qimin Yan;Chris G. Van de Walle

  • Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

    Emmanouil Kioupakis;Qimin Yan;Chris G. Van de Walle

  • Electronic and Optical Properties of Two-Dimensional GaN from First-Principles.

    Nocona Sanders;Dylan Bayerl;Guangsha Shi;Kelsey A. Mengle

  • Phonon-assisted optical absorption in silicon from first principles.

    Jesse Noffsinger;Jesse Noffsinger;Emmanouil Kioupakis;Emmanouil Kioupakis;Chris G. Van de Walle;Steven G. Louie;Steven G. Louie

  • First-principles optical spectra for F centers in MgO.

    Patrick Rinke;Patrick Rinke;André Schleife;Emmanouil Kioupakis;Emmanouil Kioupakis;Anderson Janotti

  • Electron–phonon physics from first principles using the EPW code

    Unknown

  • Quasiparticle band structures and thermoelectric transport properties of p-type SnSe

    Guangsha Shi;Emmanouil Kioupakis

  • Quasiparticle band structures and thermoelectric transport properties of p-type SnSe

    Guangsha Shi;Emmanouil Kioupakis

  • Tuning Ionic Transport in Memristive Devices by Graphene with Engineered Nanopores

    Jihang Lee;Chao Du;Kai Sun;Emmanouil Kioupakis

  • Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

    Emmanouil Kioupakis;Qimin Yan;Daniel Steiauf;Chris G Van de Walle

  • Free-carrier absorption in nitrides from first principles

    Emmanouil Kioupakis;Patrick Rinke;André Schleife;André Schleife;Friedhelm Bechstedt

  • Quasiparticle effects in the bulk and surface-state bands of Bi 2 Se 3 and Bi 2 Te 3 topological insulators

    Oleg V. Yazyev;Oleg V. Yazyev;Oleg V. Yazyev;Emmanouil Kioupakis;Joel E. Moore;Joel E. Moore;Steven G. Louie;Steven G. Louie

  • Fundamental limits on optical transparency of transparent conducting oxides: Free-carrier absorption in SnO2

    H. Peelaers;E. Kioupakis;C. G. Van de Walle

  • Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM

    Jihang Lee;William Schell;Xiaojian Zhu;Emmanouil Kioupakis

  • Spatially resolved electronic and vibronic properties of single diamondoid molecules

    Yayu Wang;Emmanouil Kioupakis;Xinghua Lu;Daniel Wegner

  • First-principles calculations of indirect Auger recombination in nitride semiconductors

    Emmanouil Kioupakis;Emmanouil Kioupakis;Daniel Steiauf;Patrick Rinke;Patrick Rinke;Kris T. Delaney

  • Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer

    Michael K. L. Man;Skylar Deckoff-Jones;Andrew Winchester;Guangsha Shi

  • Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures

    Dylan Bayerl;SM Islam;Christina M. Jones;Vladimir Protasenko

  • Fundamental limits on optical transparency of transparent conducting oxides: free-carrier absorption in SnO$_2$

    Hartwin Peelaers;Emmanouil Kioupakis;Chris G. Van de Walle

Frequent Co-Authors

Chris G. Van de Walle
Chris G. Van de Walle University of California, Santa Barbara
Steven G. Louie
Steven G. Louie University of California, Berkeley
Zetian Mi
Zetian Mi University of Michigan–Ann Arbor
Ctirad Uher
Ctirad Uher University of Michigan–Ann Arbor
Wei Lu
Wei Lu University of Michigan–Ann Arbor
Anton Van der Ven
Anton Van der Ven University of California, Santa Barbara
Michael F. Crommie
Michael F. Crommie University of California, Berkeley
Oleg V. Yazyev
Oleg V. Yazyev École Polytechnique Fédérale de Lausanne
Roy Clarke
Roy Clarke University of Michigan–Ann Arbor
Anderson Janotti
Anderson Janotti University of Delaware

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