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D-Index & Metrics

Materials Science

D-Index
83
Citations
35748
World Ranking
2314
National Ranking
667

Anderson Janotti publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Anderson Janotti sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 428 publications — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Anderson Janotti D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Anderson Janotti sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 83 D-Index — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2016 - Fellow of American Physical Society (APS) Citation For outstanding and original contributions to the fundamental understanding of defect physics and doping in widebandgap semiconductors through firstprinciples methods

Overview

Anderson Janotti is affiliated with the University of Delaware in the United States. Their research primarily spans the fields of Materials Science, Physics and Astronomy, and Engineering, with a strong focus on several subfields, including Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, and Condensed Matter Physics.

The scientist's work involves a variety of topics, notably Topological Materials and Phenomena, Electronic and Structural Properties of Oxides, 2D Materials and Applications, Semiconductor materials and devices, Iron-based superconductors research, ZnO doping and properties, and Chalcogenide Semiconductor Thin Films.

Among their recent published papers are:

  • Defects in Semiconductors, 2020, Journal of Applied Physics
  • Entropy-driven stabilization of the cubic phase of MaPbI3 at room temperature, 2020, Journal of Materials Chemistry A
  • Approach to achieving a p-type transparent conducting oxide: Doping of bismuth-alloyed Ga2O3 with a strongly correlated band edge state, 2021, Physical review. B./Physical review. B
  • Development of an artificial neural network for predicting energy absorption capability of thermoplastic commingled composites, 2020, Composite Structures
  • Assessing the roles of Cu- and Ag-deficient layers in chalcopyrite-based solar cells through first principles calculations, 2020, Journal of Applied Physics

Frequent co-authors working with Anderson Janotti include:

  • S. Khalid
  • Dai Q. Ho
  • Garnett W. Bryant
  • Hadass S. Inbar
  • C. J. Palmstrøm

Janotti's research has been published extensively in several prominent venues. The most frequent publication venues include:

  • arXiv (Cornell University)
  • Physical Review Materials
  • Physical review. B./Physical review. B
  • Journal of Applied Physics
  • The Journal of Physical Chemistry C

In 2016, Anderson Janotti was recognized as a Fellow of the American Physical Society (APS), citing their contributions to the understanding of defect physics and doping in widebandgap semiconductors through first-principles methods.

Best Publications

  • Fundamentals of zinc oxide as a semiconductor

    Anderson Janotti;Chris G Van de Walle

  • Native point defects in ZnO

    Anderson Janotti;Chris G. Van de Walle

  • First-principles calculations for point defects in solids

    Christoph Freysoldt;Blazej Grabowski;Tilmann Hickel;Jörg Neugebauer

  • Oxygen vacancies in ZnO

    Anderson Janotti;Chris G. Van de Walle

  • Quantum computing with defects

    J. R. Weber;W. F. Koehl;J. B. Varley;A. Janotti

  • Oxygen vacancies and donor impurities in β-Ga2O3

    J. B. Varley;J. R. Weber;A. Janotti;C. G. Van de Walle

  • Hydrogen multicentre bonds

    Anderson Janotti;Chris G. Van de Walle

  • Carbon impurities and the yellow luminescence in GaN

    J. L. Lyons;A. Janotti;C. G. Van de Walle

  • Role of self-trapping in luminescence and p -type conductivity of wide-band-gap oxides

    J. B. Varley;A. Janotti;C. Franchini;C. G. Van de Walle

  • Hybrid functional studies of the oxygen vacancy in TiO 2

    A. Janotti;J. B. Varley;P. Rinke;N. Umezawa

  • Direct view at excess electrons in TiO2 rutile and anatase.

    Martin Setvin;Cesare Franchini;Xianfeng Hao;Michael Schmid

  • Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

    J. L. Lyons;A. Janotti;C. G. Van de Walle

  • Why nitrogen cannot lead to p-type conductivity in ZnO

    J. L. Lyons;A. Janotti;C. G. Van de Walle

  • New insights into the role of native point defects in ZnO

    Anderson Janotti;Chris G. Van de Walle

  • Effects of cation d states on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors

    Anderson Janotti;David Segev;Chris G. Van de Walle

  • Hydrogenated cation vacancies in semiconducting oxides.

    J B Varley;H Peelaers;H Peelaers;A Janotti;C G Van de Walle

  • Sources of electrical conductivity in SnO2.

    Abhishek Kumar Singh;Anderson Janotti;Matthias Scheffler;Chris G. Van de Walle

  • Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs

    A. Janotti;Su-Huai Wei;S. B. Zhang

  • Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

    Pouya Moetakef;Tyler A. Cain;Daniel G. Ouellette;Jack Y. Zhang

  • Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors

    John L. Lyons;Anderson Janotti;Chris G. Van de Walle

  • Quantum computing with defects

    Luke Gordon;Justin R. Weber;Joel B. Varley;Anderson Janotti

Frequent Co-Authors

Chris G. Van de Walle
Chris G. Van de Walle University of California, Santa Barbara
Su-Huai Wei
Su-Huai Wei Eastern Institute of Technology, Ningbo
Susanne Stemmer
Susanne Stemmer University of California, Santa Barbara
Matthias Scheffler
Matthias Scheffler Fritz Haber Institute of the Max Planck Society
Chris Palmstrom
Chris Palmstrom University of California, Santa Barbara
Chaoying Ni
Chaoying Ni University of Delaware
Shengbai Zhang
Shengbai Zhang Rensselaer Polytechnic Institute
Georg Kresse
Georg Kresse University of Vienna
Emmanouil Kioupakis
Emmanouil Kioupakis University of Michigan–Ann Arbor
Catherine Stampfl
Catherine Stampfl University of Sydney

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