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Materials Science

D-Index
83
Citations
35748
World Ranking
2316
National Ranking
669

Research.com Recognitions

  • 2016 - Fellow of American Physical Society (APS) Citation For outstanding and original contributions to the fundamental understanding of defect physics and doping in widebandgap semiconductors through firstprinciples methods

Overview

Anderson Janotti is affiliated with the University of Delaware in the United States. Their research primarily spans the fields of Materials Science, Physics and Astronomy, and Engineering, with a strong focus on several subfields, including Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, and Condensed Matter Physics.

The scientist's work involves a variety of topics, notably Topological Materials and Phenomena, Electronic and Structural Properties of Oxides, 2D Materials and Applications, Semiconductor materials and devices, Iron-based superconductors research, ZnO doping and properties, and Chalcogenide Semiconductor Thin Films.

Among their recent published papers are:

  • Defects in Semiconductors, 2020, Journal of Applied Physics
  • Entropy-driven stabilization of the cubic phase of MaPbI3 at room temperature, 2020, Journal of Materials Chemistry A
  • Approach to achieving a p-type transparent conducting oxide: Doping of bismuth-alloyed Ga2O3 with a strongly correlated band edge state, 2021, Physical review. B./Physical review. B
  • Development of an artificial neural network for predicting energy absorption capability of thermoplastic commingled composites, 2020, Composite Structures
  • Assessing the roles of Cu- and Ag-deficient layers in chalcopyrite-based solar cells through first principles calculations, 2020, Journal of Applied Physics

Frequent co-authors working with Anderson Janotti include:

  • S. Khalid
  • Dai Q. Ho
  • Garnett W. Bryant
  • Hadass S. Inbar
  • C. J. Palmstrøm

Janotti's research has been published extensively in several prominent venues. The most frequent publication venues include:

  • arXiv (Cornell University)
  • Physical Review Materials
  • Physical review. B./Physical review. B
  • Journal of Applied Physics
  • The Journal of Physical Chemistry C

In 2016, Anderson Janotti was recognized as a Fellow of the American Physical Society (APS), citing their contributions to the understanding of defect physics and doping in widebandgap semiconductors through first-principles methods.

Best Publications

  • Fundamentals of zinc oxide as a semiconductor

    Anderson Janotti;Chris G Van de Walle

  • Native point defects in ZnO

    Anderson Janotti;Chris G. Van de Walle

  • First-principles calculations for point defects in solids

    Christoph Freysoldt;Blazej Grabowski;Tilmann Hickel;Jörg Neugebauer

  • Oxygen vacancies in ZnO

    Anderson Janotti;Chris G. Van de Walle

  • Quantum computing with defects

    J. R. Weber;W. F. Koehl;J. B. Varley;A. Janotti

  • Oxygen vacancies and donor impurities in β-Ga2O3

    J. B. Varley;J. R. Weber;A. Janotti;C. G. Van de Walle

  • Hydrogen multicentre bonds

    Anderson Janotti;Chris G. Van de Walle

  • Carbon impurities and the yellow luminescence in GaN

    J. L. Lyons;A. Janotti;C. G. Van de Walle

  • Role of self-trapping in luminescence and p -type conductivity of wide-band-gap oxides

    J. B. Varley;A. Janotti;C. Franchini;C. G. Van de Walle

  • Hybrid functional studies of the oxygen vacancy in TiO 2

    A. Janotti;J. B. Varley;P. Rinke;N. Umezawa

  • Direct view at excess electrons in TiO2 rutile and anatase.

    Martin Setvin;Cesare Franchini;Xianfeng Hao;Michael Schmid

  • Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

    J. L. Lyons;A. Janotti;C. G. Van de Walle

  • Why nitrogen cannot lead to p-type conductivity in ZnO

    J. L. Lyons;A. Janotti;C. G. Van de Walle

  • New insights into the role of native point defects in ZnO

    Anderson Janotti;Chris G. Van de Walle

  • Effects of cation d states on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors

    Anderson Janotti;David Segev;Chris G. Van de Walle

  • Hydrogenated cation vacancies in semiconducting oxides.

    J B Varley;H Peelaers;H Peelaers;A Janotti;C G Van de Walle

  • Sources of electrical conductivity in SnO2.

    Abhishek Kumar Singh;Anderson Janotti;Matthias Scheffler;Chris G. Van de Walle

  • Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs

    A. Janotti;Su-Huai Wei;S. B. Zhang

  • Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

    Pouya Moetakef;Tyler A. Cain;Daniel G. Ouellette;Jack Y. Zhang

  • Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors

    John L. Lyons;Anderson Janotti;Chris G. Van de Walle

  • Quantum computing with defects

    Luke Gordon;Justin R. Weber;Joel B. Varley;Anderson Janotti

Frequent Co-Authors

Chris G. Van de Walle
Chris G. Van de Walle University of California, Santa Barbara
Su-Huai Wei
Su-Huai Wei Eastern Institute of Technology, Ningbo
Susanne Stemmer
Susanne Stemmer University of California, Santa Barbara
Matthias Scheffler
Matthias Scheffler Fritz Haber Institute of the Max Planck Society
Chris Palmstrom
Chris Palmstrom University of California, Santa Barbara
Chaoying Ni
Chaoying Ni University of Delaware
Shengbai Zhang
Shengbai Zhang Rensselaer Polytechnic Institute
Georg Kresse
Georg Kresse University of Vienna
Emmanouil Kioupakis
Emmanouil Kioupakis University of Michigan–Ann Arbor
Catherine Stampfl
Catherine Stampfl University of Sydney

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