World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
92
Citations
40223
World Ranking
1495
National Ranking
470

David C. Look publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where David C. Look sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 596 publications — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

David C. Look D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where David C. Look sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 92 D-Index — 88th percentile

88% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

David C. Look is affiliated with Wright State University in the United States. Their research primarily focuses on materials science and engineering, with significant contributions in materials chemistry, electronic, optical and magnetic materials, as well as electrical and electronic engineering. Their work also intersects with renewable energy, sustainability, the environment, and biomedical engineering.

The main topics covered in their research include:

  • ZnO doping and properties
  • Ga2O3 and related materials
  • Electronic and structural properties of oxides
  • Semiconductor materials and devices
  • Advanced photocatalysis techniques
  • Acoustic wave resonator technologies
  • Luminescence properties of advanced materials

David C. Look has published articles in several scientific journals. Frequent publication venues include:

  • Journal of Physics D Applied Physics
  • Applied Physics Letters
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
  • APL Materials
  • Semiconductor Science and Technology

Recent notable papers cover a range of topics on oxide materials and device properties:

  • "Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1," 2021, APL Materials
  • "Neutron irradiation and forming gas anneal impact on β-Ga2O3 deep level defects," 2020, Journal of Physics D Applied Physics
  • "Optical and electrical properties of Ti-doped β-Ga2O3 (Ti3+:β-Ga2O3) bulk crystals grown by floating zone method," 2020, Journal of Physics D Applied Physics
  • "Properties of bulk scandium nitride crystals grown by physical vapor transport," 2020, Applied Physics Letters
  • "Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga2O3 with neutron irradiation and forming gas anneals," 2021, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Collaborations are a part of their research activity; frequent co-authors include Kevin Leedy, Ştefan C. Bǎdescu, Marco D. Santia, Buguo Wang, and Hantian Gao.

Best Publications

  • Recent Advances in ZnO Materials and Devices

    David C. Look

  • Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy

    David C. Look;D. C. Reynolds;C. W. Litton;R. L. Jones

  • Residual Native Shallow Donor in ZnO

    David C. Look;Joseph W. Hemsky;J. R. Sizelove

  • Electrical properties of bulk ZnO

    David C. Look;Donald C. Reynolds;J. R. Sizelove;R. L. Jones

  • ZnO diode fabricated by excimer-laser doping

    Toru Aoki;Yoshinori Hatanaka;David C. Look

  • Time Saving in Measurement of NMR and EPR Relaxation Times

    David C. Look;Donald R. Locker

  • Electrical Characterization of GaAs Materials and Devices

    David C. Look

  • Optically pumped ultraviolet lasing from ZnO

    Donald C. Reynolds;David C. Look;B. Jogai

  • Valence-band ordering in ZnO

    D. C. Reynolds;David C. Look;B. Jogai;C. W. Litton

  • P‐type doping and devices based on ZnO

    David C. Look;David C. Look;Bruce Claflin;Bruce Claflin

  • Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

    Y. I. Alivov;E. V. Kalinina;A. E. Cherenkov;David C. Look

  • Synthesis of p-type ZnO films

    Y. R. Ryu;S. Zhu;David C. Look;J. M. Wrobel

  • The Future Of ZnO Light Emitters

    David C. Look;David C. Look;Bruce Claflin;Bruce Claflin;Y. I. Alivov;Seong-Ju Park

  • Dislocation Scattering in GaN

    David C. Look;J. R. Sizelove

  • Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO.

    F. Tuomisto;V. Ranki;K. Saarinen;David C. Look

  • Neutral-donor–bound-exciton complexes in ZnO crystals

    D. C. Reynolds;David C. Look;B. Jogai;C. W. Litton

  • Defect Donor and Acceptor in GaN

    David C. Look;D. C. Reynolds;Joseph W. Hemsky;J. R. Sizelove

  • Observation of 430 nm Electroluminescence from ZnO/GaN Heterojunction Light-Emitting Diodes

    Y. I. Alivov;J. E. Van Nostrand;David C. Look;M. V. Chukichev

  • Ga-Doped ZnO Films Grown on GaN Templates by Plasma-Assisted Molecular-Beam Epitaxy

    H. J. Ko;Yanfang F. Chen;S. K. Hong;H. Wenisch

  • Evidence for native-defect donors in n-type ZnO.

    David C. Look;David C. Look;Gary C. Farlow;Pakpoom Reunchan;Sukit Limpijumnong

  • Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

    David C. Look;Richard J. Molnar

Frequent Co-Authors

Leonard J. Brillson
Leonard J. Brillson The Ohio State University
Kimmo Saarinen
Kimmo Saarinen Aalto University
Hadis Morkoç
Hadis Morkoç Virginia Commonwealth University
Andrei Osinsky
Andrei Osinsky Corning (United States)
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
Kam Sing Wong
Kam Sing Wong Hong Kong University of Science and Technology
Weili Zhang
Weili Zhang Oklahoma State University
Chih-Chung Yang
Chih-Chung Yang National Taiwan University
Marius Grundmann
Marius Grundmann Leipzig University

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