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Richard J. Molnar

Richard J. Molnar

D-Index & Metrics

Materials Science

D-Index
67
Citations
13389
World Ranking
5203
National Ranking
1361

Overview

Richard J. Molnar is affiliated with MIT in the United States and has contributed to research primarily in the fields of Physics and Astronomy and Engineering. Their subfields of study include Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, and Materials Chemistry.

The scientist's research focuses on topics related to GaN-based semiconductor devices and materials, semiconductor materials and devices, Ga2O3 and related materials, semiconductor quantum structures and devices, graphene research and applications, diamond and carbon-based materials research, as well as metal and thin film mechanics.

Recent papers authored or co-authored by Richard J. Molnar include:

  • Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes, 2021, Nano Letters
  • Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film, 2020, Diamond and Related Materials
  • Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire, 2020, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
  • III-nitride vertical hot electron transistor with polarization doping and collimated injection, 2022, Applied Physics Letters
  • Influence and Effect of Flame Straightening Heating on the Microstructure of STRENX 960 Steel, 2023, Preprints.org

Frequent co-authors collaborating with Richard J. Molnar include:

  • M.A. Hollis
  • Jeffrey W. Daulton
  • J. A. Brinkerhoff
  • A. Zaslavsky
  • T. Osadchy

Richard J. Molnar publishes in various scientific venues, with multiple articles appearing in:

  • Applied Physics Letters
  • Nano Letters
  • Diamond and Related Materials
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
  • Preprints.org

Best Publications

  • Defect Donor and Acceptor in GaN

    David C. Look;D. C. Reynolds;Joseph W. Hemsky;J. R. Sizelove

  • Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

    T. Lei;M. Fanciulli;R. J. Molnar;T. D. Moustakas

  • Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

    David C. Look;Richard J. Molnar

  • Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

    J. W. P. Hsu;M. J. Manfra;D. V. Lang;S. Richter

  • Growth of GaN by ECR-assisted MBE

    T.D. Moustakas;T. Lei;R.J. Molnar

  • Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

    J. W. P. Hsu;M. J. Manfra;R. J. Molnar;B. Heying

  • Growth of gallium nitride by hydride vapor-phase epitaxy

    R.J. Molnar;W. Götz;L.T. Romano;N.M. Johnson

  • PRESSURE INDUCED DEEP GAP STATE OF OXYGEN IN GAN

    C. Wetzel;T. Suski;J.W. Ager Iii;E.R. Weber

  • X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride

    S. D. Wolter;B. P. Luther;D. L. Waltemyer;C. Önneby

  • Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species

    R. J. Molnar;T. D. Moustakas

  • Single-Photon Detectors Based on Ultranarrow Superconducting Nanowires

    Francesco Marsili;Faraz Najafi;Eric Dauler;Francesco Bellei

  • Polarity governs atomic interaction through two-dimensional materials

    Wei Kong;Huashan Li;Huashan Li;Kuan Qiao;Yunjo Kim

  • Bulk GaN crystal growth by the high-pressure ammonothermal method

    M.P. D’Evelyn;H.C. Hong;D.-S. Park;H. Lu

  • Electrothermal feedback in superconducting nanowire single-photon detectors

    Andrew J. Kerman;Joel K. W. Yang;Richard J. Molnar;Eric A. Dauler

  • Electron transport mechanism in gallium nitride

    R. J. Molnar;T. Lei;T. D. Moustakas

  • Efficient single photon detection from 500 nm to 5 μm wavelength

    Francesco Marsili;Francesco Bellei;Faraz Najafi;Andrew E. Dane

  • High-speed and high-efficiency superconducting nanowire single photon detector array.

    D. Rosenberg;A. J. Kerman;R. J. Molnar;E. A. Dauler

  • Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy

    R. J. Molnar;R. Singh;T. D. Moustakas

  • Process for producing high-quality III-V nitride substrates

    Richard J. Molnar

  • Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

    P. Visconti;K. M. Jones;Michael A. Reshchikov;R. Cingolani

  • Hydrogenation of p‐type gallium nitride

    M. S. Brandt;N. M. Johnson;R. J. Molnar;R. Singh

Frequent Co-Authors

David C. Look
David C. Look Wright State University
Hadis Morkoç
Hadis Morkoç Virginia Commonwealth University
H. L. Stormer
H. L. Stormer Columbia University
Julia W. P. Hsu
Julia W. P. Hsu The University of Texas at Dallas
Francesco Marsili
Francesco Marsili Facebook (United States)
Linda T. Romano
Linda T. Romano Palo Alto Research Center
Leonard J. Brillson
Leonard J. Brillson The Ohio State University

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