Richard J. Molnar spends much of his time researching Optoelectronics, Epitaxy, Dislocation, Analytical chemistry and Molecular beam epitaxy. His Optoelectronics research is multidisciplinary, incorporating perspectives in Detector and Photon. His research integrates issues of Sapphire and Hydride in his study of Epitaxy.
His Dislocation research is multidisciplinary, relying on both Wide-bandgap semiconductor and Transmission electron microscopy. His work deals with themes such as Crystallography, Gallium nitride, Doping and Oxide, which intersect with Analytical chemistry. His research in Molecular beam epitaxy focuses on subjects like Heterojunction, which are connected to Scattering and Quantum Hall effect.
Richard J. Molnar focuses on Optoelectronics, Epitaxy, Analytical chemistry, Sapphire and Wide-bandgap semiconductor. The various areas that Richard J. Molnar examines in his Optoelectronics study include Molecular beam epitaxy and Detector, Optics, Photon. The study incorporates disciplines such as Hydride, Doping, Impurity, Cathodoluminescence and Dislocation in addition to Epitaxy.
His Analytical chemistry research focuses on Gallium nitride and how it relates to Nitride. His work carried out in the field of Sapphire brings together such families of science as Etching, Thermal conductivity, Substrate and Scanning electron microscope. Richard J. Molnar interconnects Schottky diode, Chemical vapor deposition and Leakage in the investigation of issues within Wide-bandgap semiconductor.
His scientific interests lie mostly in Optoelectronics, Optics, Nanowire, Detector and Photon. The Optoelectronics study combines topics in areas such as Sapphire and High-electron-mobility transistor. His work on Photon counting and Photon detector as part of general Optics study is frequently connected to Multi element, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them.
His Photon study combines topics from a wide range of disciplines, such as Photodetector, Mode coupling and Atomic physics. In his study, Wide-bandgap semiconductor is inextricably linked to Heterojunction, which falls within the broad field of Barrier layer. His Current density study combines topics in areas such as Substrate and Epitaxy.
Nanowire, Photon counting, Optics, Detector and Optoelectronics are his primary areas of study. His Photon counting research incorporates themes from Nonlinear system, Superconductivity, Bolometer and Free-space optical communication. The concepts of his Superconductivity study are interwoven with issues in Multi-mode optical fiber, Low light level, A fibers, Reset and Event.
His research in Detector intersects with topics in Quantum entanglement, Spontaneous parametric down-conversion, Mode coupling, Photon and Optical fiber. His Photon research includes themes of Photodetector and Quantum. Wide-bandgap semiconductor and Heterojunction are the core of his Optoelectronics study.
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Defect Donor and Acceptor in GaN
David C. Look;D. C. Reynolds;Joseph W. Hemsky;J. R. Sizelove.
Physical Review Letters (1997)
Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
David C. Look;Richard J. Molnar.
Applied Physics Letters (1997)
Growth of gallium nitride by hydride vapor-phase epitaxy
R.J. Molnar;W. Götz;L.T. Romano;N.M. Johnson.
Journal of Crystal Growth (1997)
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
J. W. P. Hsu;M. J. Manfra;D. V. Lang;S. Richter.
Applied Physics Letters (2001)
Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates
J. W. P. Hsu;M. J. Manfra;R. J. Molnar;B. Heying.
Applied Physics Letters (2002)
PRESSURE INDUCED DEEP GAP STATE OF OXYGEN IN GAN
C. Wetzel;T. Suski;J.W. Ager Iii;E.R. Weber.
Physical Review Letters (1997)
X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride
S. D. Wolter;B. P. Luther;D. L. Waltemyer;C. Önneby.
Applied Physics Letters (1997)
Bulk GaN crystal growth by the high-pressure ammonothermal method
M.P. D’Evelyn;H.C. Hong;D.-S. Park;H. Lu.
Journal of Crystal Growth (2007)
Process for producing high-quality III-V nitride substrates
Richard J. Molnar.
(1998)
Single-Photon Detectors Based on Ultranarrow Superconducting Nanowires
Francesco Marsili;Faraz Najafi;Eric Dauler;Francesco Bellei.
Nano Letters (2011)
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