D-Index & Metrics Best Publications
Richard J. Molnar

Richard J. Molnar

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 56 Citations 9,363 123 World Ranking 4199 National Ranking 1204

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

Richard J. Molnar spends much of his time researching Optoelectronics, Epitaxy, Dislocation, Analytical chemistry and Molecular beam epitaxy. His Optoelectronics research is multidisciplinary, incorporating perspectives in Detector and Photon. His research integrates issues of Sapphire and Hydride in his study of Epitaxy.

His Dislocation research is multidisciplinary, relying on both Wide-bandgap semiconductor and Transmission electron microscopy. His work deals with themes such as Crystallography, Gallium nitride, Doping and Oxide, which intersect with Analytical chemistry. His research in Molecular beam epitaxy focuses on subjects like Heterojunction, which are connected to Scattering and Quantum Hall effect.

His most cited work include:

  • Defect Donor and Acceptor in GaN (337 citations)
  • Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements (304 citations)
  • Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes (234 citations)

What are the main themes of his work throughout his whole career to date?

Richard J. Molnar focuses on Optoelectronics, Epitaxy, Analytical chemistry, Sapphire and Wide-bandgap semiconductor. The various areas that Richard J. Molnar examines in his Optoelectronics study include Molecular beam epitaxy and Detector, Optics, Photon. The study incorporates disciplines such as Hydride, Doping, Impurity, Cathodoluminescence and Dislocation in addition to Epitaxy.

His Analytical chemistry research focuses on Gallium nitride and how it relates to Nitride. His work carried out in the field of Sapphire brings together such families of science as Etching, Thermal conductivity, Substrate and Scanning electron microscope. Richard J. Molnar interconnects Schottky diode, Chemical vapor deposition and Leakage in the investigation of issues within Wide-bandgap semiconductor.

He most often published in these fields:

  • Optoelectronics (46.93%)
  • Epitaxy (39.11%)
  • Analytical chemistry (25.14%)

What were the highlights of his more recent work (between 2012-2021)?

  • Optoelectronics (46.93%)
  • Optics (15.64%)
  • Nanowire (13.41%)

In recent papers he was focusing on the following fields of study:

His scientific interests lie mostly in Optoelectronics, Optics, Nanowire, Detector and Photon. The Optoelectronics study combines topics in areas such as Sapphire and High-electron-mobility transistor. His work on Photon counting and Photon detector as part of general Optics study is frequently connected to Multi element, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them.

His Photon study combines topics from a wide range of disciplines, such as Photodetector, Mode coupling and Atomic physics. In his study, Wide-bandgap semiconductor is inextricably linked to Heterojunction, which falls within the broad field of Barrier layer. His Current density study combines topics in areas such as Substrate and Epitaxy.

Between 2012 and 2021, his most popular works were:

  • High-speed and high-efficiency superconducting nanowire single photon detector array. (154 citations)
  • Readout of superconducting nanowire single-photon detectors at high count rates (77 citations)
  • Polarity governs atomic interaction through two-dimensional materials. (61 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

Nanowire, Photon counting, Optics, Detector and Optoelectronics are his primary areas of study. His Photon counting research incorporates themes from Nonlinear system, Superconductivity, Bolometer and Free-space optical communication. The concepts of his Superconductivity study are interwoven with issues in Multi-mode optical fiber, Low light level, A fibers, Reset and Event.

His research in Detector intersects with topics in Quantum entanglement, Spontaneous parametric down-conversion, Mode coupling, Photon and Optical fiber. His Photon research includes themes of Photodetector and Quantum. Wide-bandgap semiconductor and Heterojunction are the core of his Optoelectronics study.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Defect Donor and Acceptor in GaN

David C. Look;D. C. Reynolds;Joseph W. Hemsky;J. R. Sizelove.
Physical Review Letters (1997)

483 Citations

Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

David C. Look;Richard J. Molnar.
Applied Physics Letters (1997)

449 Citations

Growth of gallium nitride by hydride vapor-phase epitaxy

R.J. Molnar;W. Götz;L.T. Romano;N.M. Johnson.
Journal of Crystal Growth (1997)

344 Citations

Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

J. W. P. Hsu;M. J. Manfra;D. V. Lang;S. Richter.
Applied Physics Letters (2001)

336 Citations

Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

J. W. P. Hsu;M. J. Manfra;R. J. Molnar;B. Heying.
Applied Physics Letters (2002)

301 Citations

PRESSURE INDUCED DEEP GAP STATE OF OXYGEN IN GAN

C. Wetzel;T. Suski;J.W. Ager Iii;E.R. Weber.
Physical Review Letters (1997)

286 Citations

X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride

S. D. Wolter;B. P. Luther;D. L. Waltemyer;C. Önneby.
Applied Physics Letters (1997)

271 Citations

Bulk GaN crystal growth by the high-pressure ammonothermal method

M.P. D’Evelyn;H.C. Hong;D.-S. Park;H. Lu.
Journal of Crystal Growth (2007)

251 Citations

Process for producing high-quality III-V nitride substrates

Richard J. Molnar.
(1998)

230 Citations

Single-Photon Detectors Based on Ultranarrow Superconducting Nanowires

Francesco Marsili;Faraz Najafi;Eric Dauler;Francesco Bellei.
Nano Letters (2011)

229 Citations

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