2026 Richard J. Molnar: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	67	5201	5030	1359	1272	195	13389

Richard J. Molnar publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Richard J. Molnar sits on this spectrum.

50 publications 1,163+

This scientist: 195 publications — 29th percentile

29% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Richard J. Molnar D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Richard J. Molnar sits on this spectrum.

40 D-Index 165+

This scientist: 67 D-Index — 61st percentile

61% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Richard J. Molnar is affiliated with MIT in the United States and has contributed to research primarily in the fields of Physics and Astronomy and Engineering. Their subfields of study include Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, and Materials Chemistry.

The scientist's research focuses on topics related to GaN-based semiconductor devices and materials, semiconductor materials and devices, Ga2O3 and related materials, semiconductor quantum structures and devices, graphene research and applications, diamond and carbon-based materials research, as well as metal and thin film mechanics.

Recent papers authored or co-authored by Richard J. Molnar include:

Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes, 2021, Nano Letters
Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film, 2020, Diamond and Related Materials
Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire, 2020, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
III-nitride vertical hot electron transistor with polarization doping and collimated injection, 2022, Applied Physics Letters
Influence and Effect of Flame Straightening Heating on the Microstructure of STRENX 960 Steel, 2023, Preprints.org

Frequent co-authors collaborating with Richard J. Molnar include:

M.A. Hollis
Jeffrey W. Daulton
J. A. Brinkerhoff
A. Zaslavsky
T. Osadchy

Richard J. Molnar publishes in various scientific venues, with multiple articles appearing in:

Applied Physics Letters
Nano Letters
Diamond and Related Materials
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
Preprints.org

Best Publications

Defect Donor and Acceptor in GaN

David C. Look;D. C. Reynolds;Joseph W. Hemsky;J. R. Sizelove

561
Citations
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

T. Lei;M. Fanciulli;R. J. Molnar;T. D. Moustakas

553
Citations
Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

David C. Look;Richard J. Molnar

501
Citations
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

J. W. P. Hsu;M. J. Manfra;D. V. Lang;S. Richter

381
Citations
Growth of GaN by ECR-assisted MBE

T.D. Moustakas;T. Lei;R.J. Molnar

375
Citations
Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

J. W. P. Hsu;M. J. Manfra;R. J. Molnar;B. Heying

364
Citations
Growth of gallium nitride by hydride vapor-phase epitaxy

R.J. Molnar;W. Götz;L.T. Romano;N.M. Johnson

355
Citations
PRESSURE INDUCED DEEP GAP STATE OF OXYGEN IN GAN

C. Wetzel;T. Suski;J.W. Ager Iii;E.R. Weber

317
Citations
X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride

S. D. Wolter;B. P. Luther;D. L. Waltemyer;C. Önneby

303
Citations
Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species

R. J. Molnar;T. D. Moustakas

263
Citations
Single-Photon Detectors Based on Ultranarrow Superconducting Nanowires

Francesco Marsili;Faraz Najafi;Eric Dauler;Francesco Bellei

258
Citations
Polarity governs atomic interaction through two-dimensional materials

Wei Kong;Huashan Li;Huashan Li;Kuan Qiao;Yunjo Kim

257
Citations
Bulk GaN crystal growth by the high-pressure ammonothermal method

M.P. D’Evelyn;H.C. Hong;D.-S. Park;H. Lu

254
Citations
Electrothermal feedback in superconducting nanowire single-photon detectors

Andrew J. Kerman;Joel K. W. Yang;Richard J. Molnar;Eric A. Dauler

239
Citations
Electron transport mechanism in gallium nitride

R. J. Molnar;T. Lei;T. D. Moustakas

234
Citations
Efficient single photon detection from 500 nm to 5 μm wavelength

Francesco Marsili;Francesco Bellei;Faraz Najafi;Andrew E. Dane

227
Citations
High-speed and high-efficiency superconducting nanowire single photon detector array.

D. Rosenberg;A. J. Kerman;R. J. Molnar;E. A. Dauler

226
Citations
Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy

R. J. Molnar;R. Singh;T. D. Moustakas

224
Citations
Process for producing high-quality III-V nitride substrates

Richard J. Molnar

222
Citations
Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

P. Visconti;K. M. Jones;Michael A. Reshchikov;R. Cingolani

211
Citations
Hydrogenation of p‐type gallium nitride

M. S. Brandt;N. M. Johnson;R. J. Molnar;R. Singh

211
Citations