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D-Index & Metrics

Materials Science

D-Index
47
Citations
9628
World Ranking
11048
National Ranking
2599

Linda T. Romano publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Linda T. Romano sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 162 publications — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Linda T. Romano D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Linda T. Romano sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 47 D-Index — 15th percentile

15% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Linda T. Romano is affiliated with the Palo Alto Research Center in the United States. Their professional focus is situated within this research institution, which is known for contributions to various scientific and technological fields.

There are no specific recent papers, co-authors, or publication venues recorded for Linda T. Romano in the available data. Similarly, no book publications, main or subfields of study, or main research topics have been listed.

There is also no information on awards received by Linda T. Romano. The absence of these details implies a limited publicly accessible record or recent updates regarding their research output or recognition within academic or scientific communities.

Due to the lack of detailed research topics, publications, or collaborative work listed, a comprehensive profile based solely on the provided data cannot include further specifics about their contributions or areas of expertise.

Best Publications

  • Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

    R. Singh;D. Doppalapudi;T. D. Moustakas;L. T. Romano

  • Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

    W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl

  • Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

    Unknown

  • Growth of gallium nitride by hydride vapor-phase epitaxy

    R.J. Molnar;W. Götz;L.T. Romano;N.M. Johnson

  • Inversion Domain and Stacking Mismatch Boundaries in GaN.

    John E. Northrup;Jörg Neugebauer;L. T. Romano

  • Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

    C. Youtsey;L. T. Romano;Ilesanmi Adesida

  • Structure for nitride based laser diode with growth substrate removed, and method of manufacturing nitride based laser diode array structure

    A Keyser Michael;エイ ケイセル ミカエル;P Bow David;ピー ボウ デビッド

  • Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition

    L. T. Romano;C. G. Van de Walle;J. W. Ager;W. Götz

  • Surface energetics, pit formation, and chemical ordering in InGaN alloys

    J. E. Northrup;L. T. Romano;Jörg Neugebauer

  • LARGE BAND GAP BOWING OF INXGA1-XN ALLOYS

    M. D. McCluskey;C. G. Van de Walle;C. P. Master;L. T. Romano

  • Inversion of wurtzite GaN(0001) by exposure to magnesium

    V. Ramachandran;R. M. Feenstra;W. L. Sarney;L. Salamanca-Riba

  • INVERSION DOMAINS IN GAN GROWN ON SAPPHIRE

    L. T. Romano;J. E. Northrup;M. A. O’Keefe

  • PHASE SEPARATION IN InGaN/GaN MULTIPLE QUANTUM WELLS

    M. D. McCluskey;L. T. Romano;B. S. Krusor;D. P. Bour

  • Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates

    Tanya J. Cervantes;Linda T. Romano;Michael A. Kneissl

  • InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off

    W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl

  • Smooth n-type GaN surfaces by photoenhanced wet etching

    C. Youtsey;Ilesanmi Adesida;L. T. Romano;G. Bulman

  • Photolithographically-patterned out-of-plane coil structures and method of making

    Christopher L. Chua;Francesco Lemmi;Koenraad F. Van Schuylenbergh;Jeng Ping Lu

  • Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching

    C. Youtsey;L. T. Romano;R. J. Molnar;Ilesanmi Adesida

  • Faceted inversion domain boundary in GaN films doped with Mg

    L. T. Romano;J. E. Northrup;A. J. Ptak;T. H. Myers

  • Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities

    John E. Northrup;Linda T. Romano;Ross D. Bringans

  • "Eggcrate" substrate for a twisting ball display

    Nicholas K. Sheridon;Linda T. Romano;James C. Mikkelsen;Edward A. Richley

Frequent Co-Authors

Michael Kneissl
Michael Kneissl Technical University of Berlin
Chunming Niu
Chunming Niu Xi'an Jiaotong University
David K. Fork
David K. Fork Palo Alto Research Center
John E. Northrup
John E. Northrup Palo Alto Research Center
Daniel Hofstetter
Daniel Hofstetter University of Neuchâtel
Chris G. Van de Walle
Chris G. Van de Walle University of California, Santa Barbara
Aurelien J. F. David
Aurelien J. F. David Google (United States)
William S. Wong
William S. Wong University of Waterloo
Ilesanmi Adesida
Ilesanmi Adesida University of Illinois at Urbana-Champaign

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