The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Theodore D. Moustakas sits on this spectrum.
This scientist: 398 publications — 77th percentile
77% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Theodore D. Moustakas sits on this spectrum.
This scientist: 71 D-Index — 68th percentile
68% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Theodore D. Moustakas is affiliated with Boston University in the United States. Their research and academic contributions focus primarily on optical materials and devices, with a particular emphasis on nitride semiconductors.
Their work spans the development and refinement of epitaxial growth techniques for nitride semiconductors, which are materials essential for various optoelectronic applications. This area has been a significant part of their scientific contributions over the years.
Their recognized expertise in the physical mechanisms underlying material growth and device fabrication has led to innovations in experimental methods and analytical approaches within materials science.
Theodore D. Moustakas has received several professional distinctions acknowledging their research:
These fellowships reflect a sustained engagement with and contribution to the fields of optical materials, semiconductor device engineering, and materials science.
Although details regarding specific recent papers, frequent co-authors, publication venues, and book publications are not available, the awards and affiliation provide insight into an established career centered on pioneering research in semiconductor materials and device technologies.
Nils G. Weimann;Lester F. Eastman;Dharanipal Doppalapudi;Hock M. Ng
R. Singh;D. Doppalapudi;T. D. Moustakas;L. T. Romano
T. Lei;T. D. Moustakas;R. J. Graham;Y. He
H. M. Ng;D. Doppalapudi;T. D. Moustakas;N. G. Weimann
T. Lei;M. Fanciulli;R. J. Molnar;T. D. Moustakas
J. S. Foresi;T. D. Moustakas
P Perlin;T Suski;H Teisseyre;M Leszczynski
T.D. Moustakas;T. Lei;R.J. Molnar
T. Lei;K. F. Ludwig;T. D. Moustakas
D. Doppalapudi;S. N. Basu;K. F. Ludwig;T. D. Moustakas
M. Leszczynski;T. Suski;H. Teisseyre;P. Perlin
Jacques I. Pankove;T. D. Moustakas
S. Jin;T. D. Moustakas
T. Suski;P. Perlin;H. Teisseyre;M. Leszczyński
Theodore D. Moustakas;Jasper S. Cabalu
R. J. Molnar;T. D. Moustakas
H. Teisseyre;P. Perlin;T. Suski;I. Grzegory
R. J. Molnar;T. Lei;T. D. Moustakas
Theodore D Moustakas;Roberto Paiella
R. J. Molnar;R. Singh;T. D. Moustakas
Theodore D Moustakas;マウスタカス，セオドア・ディー
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