2026 Theodore D. Moustakas: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	71	4241	4108	1139	1074	398	18474

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

4241

4108

1139

1074

398

18474

Research.com Recognitions

2021 - OSA Fellows Theodore D. Moustakas Boston University, USA For seminal, sustained contributions to optical materials and devices, particularly in nitride semiconductors
2014 - IEEE Fellow For contributions to the epitaxial growth of nitride semiconductors
2012 - Fellow, National Academy of Inventors
1994 - Fellow of American Physical Society (APS) Citation For innovative contributions to growth techniques of diverse materials and structures and for key experiments and analysis that clarified the underlying physical mechanisms

Overview

Theodore D. Moustakas is affiliated with Boston University in the United States. Their research and academic contributions focus primarily on optical materials and devices, with a particular emphasis on nitride semiconductors.

Their work spans the development and refinement of epitaxial growth techniques for nitride semiconductors, which are materials essential for various optoelectronic applications. This area has been a significant part of their scientific contributions over the years.

Their recognized expertise in the physical mechanisms underlying material growth and device fabrication has led to innovations in experimental methods and analytical approaches within materials science.

Theodore D. Moustakas has received several professional distinctions acknowledging their research:

OSA Fellows (2021) - For seminal, sustained contributions to optical materials and devices, particularly in nitride semiconductors
IEEE Fellow (2014) - For contributions to the epitaxial growth of nitride semiconductors
Fellow, National Academy of Inventors (2012)
Fellow of American Physical Society (APS) (1994) - For innovative contributions to growth techniques of diverse materials and structures and for key experiments and analysis clarifying the underlying physical mechanisms

These fellowships reflect a sustained engagement with and contribution to the fields of optical materials, semiconductor device engineering, and materials science.

Although details regarding specific recent papers, frequent co-authors, publication venues, and book publications are not available, the awards and affiliation provide insight into an established career centered on pioneering research in semiconductor materials and device technologies.

Best Publications

Scattering of electrons at threading dislocations in GaN

Nils G. Weimann;Lester F. Eastman;Dharanipal Doppalapudi;Hock M. Ng

839
Citations
Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

R. Singh;D. Doppalapudi;T. D. Moustakas;L. T. Romano

661
Citations
Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon

T. Lei;T. D. Moustakas;R. J. Graham;Y. He

574
Citations
The role of dislocation scattering in n-type GaN films

H. M. Ng;D. Doppalapudi;T. D. Moustakas;N. G. Weimann

566
Citations
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

T. Lei;M. Fanciulli;R. J. Molnar;T. D. Moustakas

553
Citations
Metal contacts to gallium nitride

J. S. Foresi;T. D. Moustakas

543
Citations
Towards the identification of the dominant donor in GaN.

P Perlin;T Suski;H Teisseyre;M Leszczynski

436
Citations
Growth of GaN by ECR-assisted MBE

T.D. Moustakas;T. Lei;R.J. Molnar

375
Citations
Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates

T. Lei;K. F. Ludwig;T. D. Moustakas

359
Citations
Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

D. Doppalapudi;S. N. Basu;K. F. Ludwig;T. D. Moustakas

344
Citations
Thermal expansion of gallium nitride

M. Leszczynski;T. Suski;H. Teisseyre;P. Perlin

308
Citations
Gallium nitride (GaN)

Jacques I. Pankove;T. D. Moustakas

307
Citations
Effect of nitrogen on the growth of diamond films

S. Jin;T. D. Moustakas

304
Citations
Mechanism of yellow luminescence in GaN

T. Suski;P. Perlin;H. Teisseyre;M. Leszczyński

280
Citations
Optical devices featuring textured semiconductor layers

Theodore D. Moustakas;Jasper S. Cabalu

278
Citations
Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species

R. J. Molnar;T. D. Moustakas

263
Citations
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer

H. Teisseyre;P. Perlin;T. Suski;I. Grzegory

248
Citations
Electron transport mechanism in gallium nitride

R. J. Molnar;T. Lei;T. D. Moustakas

234
Citations
Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz.

Theodore D Moustakas;Roberto Paiella

227
Citations
Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy

R. J. Molnar;R. Singh;T. D. Moustakas

224
Citations
Method of making semiconductor device with exposure of sapphire substrate to activated nitrogen, and semiconductor device

Theodore D Moustakas;マウスタカス，セオドア・ディー

220
Citations