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Theodore D. Moustakas

Theodore D. Moustakas

Boston University
United States

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 71 4239 4105 1137 1071 398 18474

Theodore D. Moustakas publications per year

The chart shows the history of publications by Theodore D. Moustakas between 1975 and 2020, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Theodore D. Moustakas published across 46 years, from 1975 to 2020, averaging 8.8 papers a year. Output peaked at 26 publications in 1996. 1 of the 404 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1975 to 2020. Vertical axis: number of publications, 0 to 26. Peak 26 publications in 1996. 1975: 2 publications 1976: 1 publication 1977: 2 publications 1978: 0 publications 1979: 2 publications 1980: 8 publications 1981: 8 publications 1982: 3 publications 1983: 4 publications 1984: 6 publications 1985: 2 publications 1986: 2 publications 1987: 3 publications 1988: 4 publications 1989: 7 publications 1990: 4 publications 1991: 4 publications 1992: 14 publications 1993: 14 publications 1994: 12 publications 1995: 14 publications 1996: 26 publications 1997: 16 publications 1998: 14 publications 1999: 15 publications 2000: 13 publications 2001: 5 publications 2002: 14 publications 2003: 9 publications 2004: 8 publications 2005: 13 publications 2006: 14 publications 2007: 20 publications 2008: 21 publications 2009: 15 publications 2010: 11 publications 2011: 13 publications 2012: 21 publications 2013: 13 publications 2014: 4 publications 2015: 6 publications 2016: 6 publications 2017: 9 publications 2018: 1 publication 2019: 0 publications 2020: 1 publication
1975 2020

404 publications in total across all disciplines

View publications per year as a table
Theodore D. Moustakas: publications per year, 1975 to 2020
Year Publications
1975 2
1976 1
1977 2
1978 0
1979 2
1980 8
1981 8
1982 3
1983 4
1984 6
1985 2
1986 2
1987 3
1988 4
1989 7
1990 4
1991 4
1992 14
1993 14
1994 12
1995 14
1996 26
1997 16
1998 14
1999 15
2000 13
2001 5
2002 14
2003 9
2004 8
2005 13
2006 14
2007 20
2008 21
2009 15
2010 11
2011 13
2012 21
2013 13
2014 4
2015 6
2016 6
2017 9
2018 1
2019 0
2020 1
Total 404
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Theodore D. Moustakas publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Theodore D. Moustakas sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 390–409 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 398 publications — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321 398
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Theodore D. Moustakas D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Theodore D. Moustakas sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 70–71 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 71 D-Index — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378 71
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Research.com Recognitions

  • 2021 - OSA Fellows Theodore D. Moustakas Boston University, USA For seminal, sustained contributions to optical materials and devices, particularly in nitride semiconductors
  • 2014 - IEEE Fellow For contributions to the epitaxial growth of nitride semiconductors
  • 2012 - Fellow, National Academy of Inventors
  • 1994 - Fellow of American Physical Society (APS) Citation For innovative contributions to growth techniques of diverse materials and structures and for key experiments and analysis that clarified the underlying physical mechanisms

Overview

Theodore D. Moustakas is affiliated with Boston University in the United States. Their research and academic contributions focus primarily on optical materials and devices, with a particular emphasis on nitride semiconductors.

Their work spans the development and refinement of epitaxial growth techniques for nitride semiconductors, which are materials essential for various optoelectronic applications. This area has been a significant part of their scientific contributions over the years.

Their recognized expertise in the physical mechanisms underlying material growth and device fabrication has led to innovations in experimental methods and analytical approaches within materials science.

Theodore D. Moustakas has received several professional distinctions acknowledging their research:

  • OSA Fellows (2021) - For seminal, sustained contributions to optical materials and devices, particularly in nitride semiconductors
  • IEEE Fellow (2014) - For contributions to the epitaxial growth of nitride semiconductors
  • Fellow, National Academy of Inventors (2012)
  • Fellow of American Physical Society (APS) (1994) - For innovative contributions to growth techniques of diverse materials and structures and for key experiments and analysis clarifying the underlying physical mechanisms

These fellowships reflect a sustained engagement with and contribution to the fields of optical materials, semiconductor device engineering, and materials science.

Although details regarding specific recent papers, frequent co-authors, publication venues, and book publications are not available, the awards and affiliation provide insight into an established career centered on pioneering research in semiconductor materials and device technologies.

Best Publications

  • Scattering of electrons at threading dislocations in GaN

    Nils G. Weimann;Lester F. Eastman;Dharanipal Doppalapudi;Hock M. Ng

  • Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

    R. Singh;D. Doppalapudi;T. D. Moustakas;L. T. Romano

  • Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon

    T. Lei;T. D. Moustakas;R. J. Graham;Y. He

  • The role of dislocation scattering in n-type GaN films

    H. M. Ng;D. Doppalapudi;T. D. Moustakas;N. G. Weimann

  • Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

    T. Lei;M. Fanciulli;R. J. Molnar;T. D. Moustakas

  • Metal contacts to gallium nitride

    J. S. Foresi;T. D. Moustakas

  • Towards the identification of the dominant donor in GaN.

    P Perlin;T Suski;H Teisseyre;M Leszczynski

  • Growth of GaN by ECR-assisted MBE

    T.D. Moustakas;T. Lei;R.J. Molnar

  • Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates

    T. Lei;K. F. Ludwig;T. D. Moustakas

  • Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

    D. Doppalapudi;S. N. Basu;K. F. Ludwig;T. D. Moustakas

  • Thermal expansion of gallium nitride

    M. Leszczynski;T. Suski;H. Teisseyre;P. Perlin

  • Gallium nitride (GaN)

    Jacques I. Pankove;T. D. Moustakas

  • Effect of nitrogen on the growth of diamond films

    S. Jin;T. D. Moustakas

  • Mechanism of yellow luminescence in GaN

    T. Suski;P. Perlin;H. Teisseyre;M. Leszczyński

  • Optical devices featuring textured semiconductor layers

    Theodore D. Moustakas;Jasper S. Cabalu

  • Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species

    R. J. Molnar;T. D. Moustakas

  • Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer

    H. Teisseyre;P. Perlin;T. Suski;I. Grzegory

  • Electron transport mechanism in gallium nitride

    R. J. Molnar;T. Lei;T. D. Moustakas

  • Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz.

    Theodore D Moustakas;Roberto Paiella

  • Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy

    R. J. Molnar;R. Singh;T. D. Moustakas

  • Method of making semiconductor device with exposure of sapphire substrate to activated nitrogen, and semiconductor device

    Theodore D Moustakas;マウスタカス，セオドア・ディー

Frequent Co-Authors

Roberto Paiella
Roberto Paiella Boston University
Luca Dal Negro
Luca Dal Negro Boston University
Marco Fanciulli
Marco Fanciulli University of Milano-Bicocca
Tadeusz Suski
Tadeusz Suski Polish Academy of Sciences
Izabella Grzegory
Izabella Grzegory Polish Academy of Sciences
Sylwester Porowski
Sylwester Porowski Polish Academy of Sciences
Thomas Tiedje
Thomas Tiedje University of Victoria
M. S. Ünlü
M. S. Ünlü Boston University
Louis F. J. Piper
Louis F. J. Piper University of Warwick
Michael Wraback
Michael Wraback United States Army Research Laboratory

External Links

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