World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
43
Citations
8483
World Ranking
3867
National Ranking
68

Daniel Hofstetter publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Daniel Hofstetter sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 188 publications — 26th percentile

26% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Daniel Hofstetter D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Daniel Hofstetter sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 43 D-Index — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Daniel Hofstetter is affiliated with the University of Neuchâtel in Switzerland and specializes in research primarily within the fields of Physics and Astronomy as well as Engineering. Their scholarly output encompasses various subfields including Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, Spectroscopy, and Biomedical Engineering.

The main topics of Hofstetter's work cover Semiconductor Quantum Structures and Devices, GaN-based semiconductor devices and materials, Spectroscopy and Laser Applications, Advanced Fiber Laser Technologies, Photonic and Optical Devices, Nanowire Synthesis and Applications, and issues related to Global Education and Multiculturalism.

Hofstetter has published extensively in notable venues, with a concentration of articles appearing in journals such as Crystals, Photonics, Revue suisse de pédagogie spécialisée, Superlattices and Microstructures, and Micromachines. These platforms align with the technical and scientific scope of their research fields.

The recent papers authored or co-authored by Hofstetter include:

  • Evidence of strong electron-phonon interaction in a GaN-based quantum cascade emitter, 2020, Superlattices and Microstructures
  • Proposal for Deep-UV Emission from a Near-Infrared AlN/GaN-Based Quantum Cascade Device Using Multiple Photon Up-Conversion, 2023, Crystals
  • Monolithically Integrated Michelson Interferometer Using an InGaAs/InAlAs Quantum Cascade Laser at λ = 4 µm, 2024, Photonics
  • AlGaN-Based 1.55 µm Phototransistor as a Crucial Building Block for Optical Computers, 2021, Crystals
  • Les inégalités sociales en éducation, 2023, Revue suisse de pédagogie spécialisée

Frequent co-authors include D. P. Bour, Hans Beck, H. P. Beck, Emline Beckmann, and Loïs Bilat, indicating collaborative research ties across various projects and domains.

The subjects of Hofstetter's investigations deeply interconnect semiconductor quantum structures, particularly GaN-based devices, and their applications in photonics and spectroscopy. This is reflected through the thematic focus in their most cited works.

Best Publications

  • Continuous wave operation of a mid-infrared semiconductor laser at room temperature.

    Mattias Beck;Daniel Hofstetter;Thierry Aellen;Jérôme Faist

  • ZnO Devices and Applications: A Review of Current Status and Future Prospects

    Ümit Özgür;Daniel Hofstetter;Hadis Morkoç

  • Bound-to-continuum and two-phonon resonance, quantum-cascade lasers for high duty cycle, high-temperature operation

    K. Faist;D. Hofstetter;M. Beck;T. Aellen

  • Blue vertical cavity surface emitting laser

    Philip D. Floyd;Daniel Hofstetter

  • High-temperature operation of distributed feedback quantum-cascade lasers at 5.3 μm

    Daniel Hofstetter;Mattias Beck;Thierry Aellen;Jérôme Faist

  • Terahertz range quantum well infrared photodetector

    Marcel Graf;Giacomo Scalari;Daniel Hofstetter;Jérôme Faist

  • Quantum Cascade Detectors

    F.R. Giorgetta;E. Baumann;M. Graf;Quankui Yang

  • GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

    Prem K. Kandaswamy;Fabien Guillot;Edith Bellet-Amalric;Eva Monroy

  • GaN/AlN-based quantum-well infrared photodetector for 1.55 μm

    Daniel Hofstetter;Sven-Silvius Schad;Hong Wu;William J. Schaff

  • Quantum-cascade-laser structures as photodetectors

    Daniel Hofstetter;Mattias Beck;Jérôme Faist

  • Continuous wave operation of a 9.3 μm quantum cascade laser on a Peltier cooler

    Daniel Hofstetter;Mattias Beck;Thierry Aellen;Jérôme Faist

  • Photoacoustic spectroscopy with quantum cascade distributed-feedback lasers.

    Daniel Hofstetter;Mattias Beck;Jérôme Faist;Markus Nägele

  • Free-space optical data link using Peltier-cooled quantum cascade laser

    Stéphane Blaser;Daniel Hofstetter;Mattias Beck;Jérôme Faist

  • Surface-emitting 10.1 μm quantum-cascade distributed feedback lasers

    Daniel Hofstetter;Jérôme Faist;Mattias Beck;Ursula Oesterle

  • InP-based quantum cascade detectors in the mid-infrared

    Marcel Graf;Nicolas Hoyler;Marcella Giovannini;Jérôme Faist

  • Long-wavelength (λ≈16 μm), room-temperature, single-frequency quantum-cascade lasers based on a bound-to-continuum transition

    Michel Rochat;Daniel Hofstetter;Mattias Beck;Jérôme Faist

  • Continuous-wave distributed-feedback quantum-cascade lasers on a Peltier cooler

    Thierry Aellen;Stéphane Blaser;Mattias Beck;Daniel Hofstetter

  • Measurement of semiconductor laser gain and dispersion curves utilizing Fourier transforms of the emission spectra

    D. Hofstetter;J. Faist

  • Demonstration of high-performance 10.16 μm quantum cascade distributed feedback lasers fabricated without epitaxial regrowth

    Daniel Hofstetter;Jérôme Faist;Mattias Beck;Antoine Müller

  • MULTIPLE WAVELENGTH LASER ARRAY FABRICATED BY FLIP-CHIP BONDING

    Hofstetter Daniel;Dunnrowicz Clarence J;Sun Decai;Bringans Ross D

Frequent Co-Authors

Jérôme Faist
Jérôme Faist ETH Zurich
Eva Monroy
Eva Monroy Grenoble Alpes University
Mattias Beck
Mattias Beck ETH Zurich
William J. Schaff
William J. Schaff Cornell University
Michael Kneissl
Michael Kneissl Technical University of Berlin
Linda T. Romano
Linda T. Romano Palo Alto Research Center
Thomas Elsaesser
Thomas Elsaesser Max Planck Society
Lester F. Eastman
Lester F. Eastman Cornell University
H. Melchior
H. Melchior ETH Zurich

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