World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
13696
World Ranking
1635
National Ranking
39

Materials Science

D-Index
61
Citations
14631
World Ranking
6724
National Ranking
103

Overview

Marc Ilegems is affiliated with the École Polytechnique Fédérale de Lausanne in Switzerland. Their professional activity is anchored in this well-known research institution.

The scientist's recent academic contributions, coauthors, publication venues, books, and specific research topics are not listed, which suggests a limited publicly available bibliographic footprint or a focused specialization that is not widely documented in the data provided.

Without explicit information on research fields or subfields, it is not possible to detail specific areas of study. Similarly, there are no awards recorded for Marc Ilegems, indicating no publicly documented recognitions or distinctions within the provided dataset.

The absence of detailed records about papers, coauthors, or publication venues limits a deeper overview of their collaborative networks or impact measured by citations. Nonetheless, Marc Ilegems' association with a major technical university implies engagement with scientific research and higher education.

Best Publications

  • Continuous wave operation of a mid-infrared semiconductor laser at room temperature.

    Mattias Beck;Daniel Hofstetter;Thierry Aellen;Jérôme Faist

  • Infrared Lattice Vibrations and Free-Electron Dispersion in GaN

    A. S. Barker;M. Ilegems

  • Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers

    R. Dingle;D. D. Sell;S. E. Stokowski;M. Ilegems

  • Measurement of cavity-polariton dispersion curve from angle resolved photoluminescence experiments.

    R. Houdré;C. Weisbuch;C. Weisbuch;R. P. Stanley;U. Oesterle

  • Vacuum-field Rabi splitting in the presence of inhomogeneous broadening: resolution of a homogeneous linewidth in an inhomogeneously broadened system

    R. Houdré;R. P. Stanley;M. Ilegems

  • Phase equilibria in ternary III–V systems

    M.B. Panish;M. Ilegems

  • Donor-acceptor pair recombination in GaN

    R. Dingle;M. Ilegems

  • High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN

    J.-F. Carlin;M. Ilegems

  • Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs

    M. Ilegems

  • Saturation of the strong-coupling regime in a semiconductor microcavity: Free-carrier bleaching of cavity polaritons

    R. Houdré;J. L. Gibernon;P. Pellandini;R. P. Stanley

  • Room-temperature cavity polaritons in a semiconductor microcavity

    R. Houdré;R. P. Stanley;U. Oesterle;M. Ilegems

  • Electrical properties of n-type vapor-grown gallium nitride

    M. Ilegems;H.C. Montgomery

  • Confined Electrons and Photons

    C. Weisbuch;H. Benisty;D. Labilloy;R. Houdré

  • Study of electron traps in n‐GaAs grown by molecular beam epitaxy

    D. V. Lang;A. Y. Cho;A. C. Gossard;M. Ilegems

  • Luminescence of Zn‐ and Cd‐doped GaN

    M. Ilegems;R. Dingle;R. A. Logan

  • Luminescence of Be‐ and Mg‐doped GaN

    M. Ilegems;R. Dingle

  • Far-infrared (λ=88 μm) electroluminescence in a quantum cascade structure

    Michel Rochat;Jérôme Faist;Mattias Beck;Ursula Oesterle

  • Optical and electrical properties of Mn‐doped GaAs grown by molecular‐beam epitaxy

    M. Ilegems;R. Dingle;L. W. Rupp

  • Coupled semiconductor microcavities

    R. P. Stanley;R. Houdré;U. Oesterle;M. Ilegems

  • Continuous wave operation of a 9.3 μm quantum cascade laser on a Peltier cooler

    Daniel Hofstetter;Mattias Beck;Thierry Aellen;Jérôme Faist

Frequent Co-Authors

Romuald Houdré
Romuald Houdré École Polytechnique Fédérale de Lausanne
Nicolas Grandjean
Nicolas Grandjean École Polytechnique Fédérale de Lausanne
Jérôme Faist
Jérôme Faist ETH Zurich
Claude Weisbuch
Claude Weisbuch University of California, Santa Barbara
H. Melchior
H. Melchior ETH Zurich
Andrea Fiore
Andrea Fiore Eindhoven University of Technology
Daniel Hofstetter
Daniel Hofstetter University of Neuchâtel
Mattias Beck
Mattias Beck ETH Zurich
Maria Tchernycheva
Maria Tchernycheva University of Paris-Saclay

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