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Materials Science

D-Index
129
Citations
78948
World Ranking
350
National Ranking
135

Research.com Recognitions

  • 2016 - Member of the National Academy of Engineering For contributions to the theory of semiconductor interfaces and its impact on optoelectronic devices.
  • 2012 - IEEE Fellow For contributions to the theory of interfaces, doping and defects in semiconductors
  • 2010 - Fellow of the Materials Research Society
  • 2010 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 2002 - David Adler Lectureship Award in the Field of Materials Physics
  • 2002 - David Adler Lectureship Award in the Field of Materials Physics, American Physical Society
  • 1997 - Fellow of American Physical Society (APS) Citation For innovative contributions to the theoretical understanding of interfaces, defects, and impurities in semiconductors through the application of firstprinciples calculations

Overview

Chris G. Van de Walle is affiliated with the University of California, Santa Barbara in the United States. Their research spans multiple fields in materials science and engineering, focusing extensively on semiconductor materials and their properties.

The main fields of study for Van de Walle include:

  • Materials Science
  • Engineering

Their work delves into subfields such as:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Van de Walle's primary research topics cover various materials and semiconductor devices, including:

  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • ZnO doping and properties
  • GaN-based semiconductor devices and materials
  • Electronic and Structural Properties of Oxides
  • Perovskite Materials and Applications
  • Diamond and Carbon-based Materials Research

Frequent publication venues for Van de Walle include:

  • Physical Review B
  • arXiv (Cornell University)
  • Applied Physics Letters
  • Journal of Applied Physics
  • Physical Review Materials

Van de Walle has contributed to numerous research papers, with some of the recent publications being:

  • Nonrad: Computing nonradiative capture coefficients from first principles, 2021, Computer Physics Communications
  • Minimizing hydrogen vacancies to enable highly efficient hybrid perovskites, 2021, Nature Materials
  • Iodine interstitials as a cause of nonradiative recombination in hybrid perovskites, 2020, Physical Review B
  • Correctly Assessing Defect Tolerance in Halide Perovskites, 2020, The Journal of Physical Chemistry C
  • First-principles surface energies for monoclinic Ga2O3 and Al2O3 and consequences for cracking of (AlxGa1−x)2O3, 2020, APL Materials

Frequent co-authors collaborating with Van de Walle include:

  • Mark E. Turiansky
  • Sai Mu
  • Audrius Alkauskas
  • Xie Zhang
  • Jimmy-Xuan Shen

Throughout their career, Van de Walle has received several awards and recognitions, such as:

  • Member of the National Academy of Engineering (2016) for contributions to the theory of semiconductor interfaces and its impact on optoelectronic devices
  • IEEE Fellow (2012) for work on the theory of interfaces, doping, and defects in semiconductors
  • Fellow of the Materials Research Society (2010)
  • Fellow of the American Association for the Advancement of Science (AAAS) (2010)
  • David Adler Lectureship Award in the Field of Materials Physics, American Physical Society (2002)
  • Fellow of American Physical Society (APS) (1997) with citation for contributions to the theoretical understanding of interfaces, defects, and impurities in semiconductors using first-principles calculations

Best Publications

  • Fundamentals of zinc oxide as a semiconductor

    Anderson Janotti;Chris G Van de Walle

  • First-principles calculations for defects and impurities: Applications to III-nitrides

    Chris G. Van de Walle;Jörg Neugebauer

  • Native point defects in ZnO

    Anderson Janotti;Chris G. Van de Walle

  • First-principles calculations for point defects in solids

    Christoph Freysoldt;Blazej Grabowski;Tilmann Hickel;Jörg Neugebauer

  • First-principles study of native point defects in ZnO

    A. F. Kohan;G. Ceder;D. Morgan;Chris G. Van de Walle

  • Oxygen vacancies in ZnO

    Anderson Janotti;Chris G. Van de Walle

  • Theoretical calculations of heterojunction discontinuities in the Si/Ge system.

    Chris G. Van de Walle;Richard M. Martin

  • Fully ab initio finite-size corrections for charged-defect supercell calculations.

    Christoph Freysoldt;Jörg Neugebauer;Chris G. Van de Walle

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Universal alignment of hydrogen levels in semiconductors, insulators and solutions

    Chris G. Van de Walle;Jörg Neugebauer

  • Gallium vacancies and the yellow luminescence in GaN

    Jörg Neugebauer;Chris G. Van de Walle

  • Atomic geometry and electronic structure of native defects in GaN

    Jörg Neugebauer;Chris G. Van de Walle

  • Quantum computing with defects

    J. R. Weber;W. F. Koehl;J. B. Varley;A. Janotti

  • Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation

    C. Stampfl;C. G. Van de Walle

  • Oxygen vacancies and donor impurities in β-Ga2O3

    J. B. Varley;J. R. Weber;A. Janotti;C. G. Van de Walle

  • Hydrogen multicentre bonds

    Anderson Janotti;Chris G. Van de Walle

  • Theoretical study of band offsets at semiconductor interfaces

    Chris G. Van de Walle;Richard M. Martin

  • Carbon impurities and the yellow luminescence in GaN

    J. L. Lyons;A. Janotti;C. G. Van de Walle

  • Role of self-trapping in luminescence and p -type conductivity of wide-band-gap oxides

    J. B. Varley;A. Janotti;C. Franchini;C. G. Van de Walle

  • Theory of hydrogen diffusion and reactions in crystalline silicon

    Chris G. Van de Walle;P. J. H. Denteneer;Y. Bar-Yam;S. T. Pantelides

  • Quantum computing with defects

    Luke Gordon;Justin R. Weber;Joel B. Varley;Anderson Janotti

Frequent Co-Authors

Anderson Janotti
Anderson Janotti University of Delaware
Jörg Neugebauer
Jörg Neugebauer Max Planck Institute for Iron Research
Emmanouil Kioupakis
Emmanouil Kioupakis University of Michigan–Ann Arbor
Matthias Scheffler
Matthias Scheffler Fritz Haber Institute of the Max Planck Society
John E. Northrup
John E. Northrup Palo Alto Research Center
James S. Speck
James S. Speck University of California, Santa Barbara
Catherine Stampfl
Catherine Stampfl University of Sydney
Sokrates T. Pantelides
Sokrates T. Pantelides Vanderbilt University
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Susanne Stemmer
Susanne Stemmer University of California, Santa Barbara

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