2016 - Member of the National Academy of Engineering For contributions to the theory of semiconductor interfaces and its impact on optoelectronic devices.
2012 - IEEE Fellow For contributions to the theory of interfaces, doping and defects in semiconductors
2010 - Fellow of the American Association for the Advancement of Science (AAAS)
2010 - Fellow of the Materials Research Society
2002 - David Adler Lectureship Award in the Field of Materials Physics
2002 - David Adler Lectureship Award in the Field of Materials Physics, American Physical Society
1997 - Fellow of American Physical Society (APS) Citation For innovative contributions to the theoretical understanding of interfaces, defects, and impurities in semiconductors through the application of firstprinciples calculations
The scientist’s investigation covers issues in Condensed matter physics, Semiconductor, Density functional theory, Electronic structure and Hydrogen. His Condensed matter physics study combines topics from a wide range of disciplines, such as Valence, Nitride and Lattice constant. Semiconductor is a subfield of Optoelectronics that Chris G. Van de Walle explores.
His studies in Electronic structure integrate themes in fields like Luminescence and Metal. His Hydrogen research is multidisciplinary, relying on both Chemical physics, Doping, Passivation, Atomic physics and Electron. His Doping research incorporates elements of Crystallographic defect, Acceptor and Nitrogen.
His primary areas of investigation include Condensed matter physics, Optoelectronics, Hydrogen, Doping and Semiconductor. His research combines Density functional theory and Condensed matter physics. His work investigates the relationship between Hydrogen and topics such as Chemical physics that intersect with problems in Vacancy defect.
His Doping study incorporates themes from Acceptor, Impurity and Conductivity. His Impurity research is multidisciplinary, incorporating elements of Inorganic chemistry, Crystallographic defect and Luminescence. He frequently studies issues relating to Engineering physics and Semiconductor.
Chris G. Van de Walle mainly focuses on Density functional theory, Condensed matter physics, Chemical physics, Semiconductor and Impurity. His work deals with themes such as Doping, Atom, Crystallographic defect, Electronic structure and Band gap, which intersect with Density functional theory. The various areas that Chris G. Van de Walle examines in his Condensed matter physics study include Polarization, Scattering, Electron and Wurtzite crystal structure.
His work carried out in the field of Chemical physics brings together such families of science as Hydrogen, Acceptor and Iodide. His work in Hydrogen covers topics such as Nitride which are related to areas like Hybrid functional. The Semiconductor study combines topics in areas such as Lattice and Fermi gas.
Chemical physics, Density functional theory, Doping, Band gap and Semiconductor are his primary areas of study. His biological study spans a wide range of topics, including Auger effect, Acceptor, Impurity and Iodide. Chris G. Van de Walle combines subjects such as Hydrogen, Indium and Conductivity with his study of Acceptor.
His Density functional theory research is multidisciplinary, incorporating perspectives in Phonon, Thermal conductivity and Monoclinic crystal system. His Doping research includes elements of Crystallography, Crystallographic defect, Atom and Vacancy defect. Chris G. Van de Walle focuses mostly in the field of Band gap, narrowing it down to matters related to Nitride and, in some cases, Electronic structure.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Fundamentals of zinc oxide as a semiconductor
Anderson Janotti;Chris G Van de Walle.
Reports on Progress in Physics (2009)
Native point defects in ZnO
Anderson Janotti;Chris G. Van de Walle.
Physical Review B (2007)
First-principles calculations for defects and impurities: Applications to III-nitrides
Chris G. Van de Walle;Jörg Neugebauer.
Journal of Applied Physics (2004)
First-principles study of native point defects in ZnO
A. F. Kohan;G. Ceder;D. Morgan;Chris G. Van de Walle.
Physical Review B (2000)
First-principles calculations for point defects in solids
Christoph Freysoldt;Blazej Grabowski;Tilmann Hickel;Jörg Neugebauer.
Reviews of Modern Physics (2014)
Oxygen vacancies in ZnO
Anderson Janotti;Chris G. Van de Walle.
Applied Physics Letters (2005)
Theoretical calculations of heterojunction discontinuities in the Si/Ge system.
Chris G. Van de Walle;Richard M. Martin.
Physical Review B (1986)
Gallium vacancies and the yellow luminescence in GaN
Jörg Neugebauer;Chris G. Van de Walle.
Applied Physics Letters (1996)
Universal alignment of hydrogen levels in semiconductors, insulators and solutions
Chris G. Van de Walle;Jörg Neugebauer.
Nature (2003)
Fully ab initio finite-size corrections for charged-defect supercell calculations.
Christoph Freysoldt;Jörg Neugebauer;Chris G. Van de Walle.
Physical Review Letters (2009)
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