Kimmo Saarinen

Overview

Best Publications

• Observation of Native Ga Vacancies in GaN by Positron Annihilation

  K. Saarinen;T. Laine;S. Kuisma;J. Nissilä

  619
  Citations

• Observation Of Native Ga Vacancies In Gan By Positron Annihilation

  K. Saarinen;T. Laine;S. Kuisma;J. Nissilä

  601
  Citations

• Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO.

  F. Tuomisto;V. Ranki;K. Saarinen;David C. Look

  577
  Citations

• Introduction and recovery of point defects in electron-irradiated ZnO

  F. Tuomisto;K. Saarinen;David C. Look;Gary C. Farlow

  412
  Citations

• Theoretical and experimental study of positron annihilation with core electrons in solids

  M. Alatalo;B. Barbiellini;M. Hakala;H. Kauppinen

  348
  Citations

• Identification of vacancy defects in compound semiconductors by core-electron annihilation: Application to InP

  M. Alatalo;H. Kauppinen;K. Saarinen;Martti J. Puska

  303
  Citations

• Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN

  R. Armitage;William Hong;Qing Yang;H. Feick

  242
  Citations

• Thermal stability of isolated and complexed Ga vacancies in GaN bulk crystals

  K. Saarinen;T. Suski;I. Grzegory;David C. Look

  172
  Citations

• Vacancy defects as compensating centers in Mg-doped GaN.

  S. Hautakangas;J. Oila;M. Alatalo;M. Alatalo;K. Saarinen

  168
  Citations

• Ga Vacancies as Dominant Intrinsic Acceptors in GaN Grown by Hydride Vapor Phase Epitaxy

  J. Oila;J. Kivioja;V. Ranki;K. Saarinen

  161
  Citations

• Shallow positron traps in GaAs.

  Saarinen K;Hautojärvi P;Vehanen A;Krause R

  155
  Citations

• Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers

  J. Oila;V. Ranki;J. Kivioja;K. Saarinen

  146
  Citations

• Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy

  K. Saarinen;P. Seppälä;J. Oila;P. Hautojärvi

  139
  Citations

• Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

  Filip Tuomisto;Kimmo Saarinen;B. Lucznik;I. Grzegory

  138
  Citations

• Positron-annihilation spectroscopy of native vacancies in as-grown GaAs.

  C. Corbel;M. Stucky;P. Hautojärvi;K. Saarinen

  136
  Citations

• Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy

  S. Hautakangas;I. Makkonen;V. Ranki;M. J. Puska

  125
  Citations

• Gallium vacancies and gallium antisites as acceptors in electron-irradiated semi-insulating GaAs.

  C. Corbel;F. Pierre;K. Saarinen;P. Hautojärvi

  121
  Citations

• Identification of vacancy-impurity complexes in highly n-type Si

  K. Saarinen;J. Nissilä;H. Kauppinen;M. Hakala

  120
  Citations

• Chapter 5 Positron Annihilation Spectroscopy of Defects in Semiconductors

  Kimmo Saarinen;Pekka Hautojärvi;Catherine Corbel

  119
  Citations

• Ionization levels of As vacancies in as-grown GaAs studied by positron-lifetime spectroscopy

  K. Saarinen;P. Hautojärvi;P. Lanki;C. Corbel

  117
  Citations

• Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy

  E. Calleja;M. A. Sánchez-García;D. Basak;F. J. Sánchez

  113
  Citations

• Observation of defect complexes containing Ga vacancies in GaAsN

  Juha Toivonen;Teppo Hakkarainen;Markku Sopanen;Harri Lipsanen

  104
  Citations

• The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

  K. Saarinen;J. Nissilä;P. Hautojärvi;Jari Likonen

  98
  Citations