M. Pessa

Research.com Recognitions

• 2006 - Member of the National Academy of Engineering For outstanding contributions to optoelectronic devices, and for exceptional leadership in establishing new semiconductor industries in Finland.

Overview

Best Publications

• Ultra-fast fibre laser systems based on SESAM technology: new horizons and applications

  Oleg Okhotnikov;Anatoly Grudinin;Markus Pessa

  499
  Citations

• Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal

  R. Nowak;M. Pessa;M. Suganuma;M. Leszczynski

  213
  Citations

• A 0.6 W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32 /spl mu/m

  S.A. Smith;J.-M. Hopkins;H.D. Sun;D. Burns

  189
  Citations

• High power CW red VECSEL with linearly polarized TEM00 output beam.

  Jennifer E. Hastie;Stephane Calvez;Martin D. Dawson;Tomi Leinonen

  184
  Citations

• Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy

  Unknown

  155
  Citations

• 1.5-microm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser.

  O. G. Okhotnikov;T. Jouhti;J. Konttinen;S. Karirinne

  153
  Citations

• Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard’s law

  Unknown

  141
  Citations

• A study of ZnTe films grown on glass substrates using an atomic layer evaporation method

  Unknown

  118
  Citations

• Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

  E.-M. Pavelescu;C. S. Peng;T. Jouhti;J. Konttinen

  107
  Citations

• Reactivity of Pd/Al2O3, Pd/La2O3–Al2O3and Pd/LaAlO3Catalysts for the Reduction of NO by CO: CO and NO Adsorption

  M. Valden;R.L. Keiski;N. Xiang;J. Pere

  102
  Citations

• Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy

  Unknown

  96
  Citations

• Vertical external-cavity surface-emitting laser for dual-wavelength generation

  T. Leinonen;Y.A. Morozov;A. Harkonen;M. Pessa

  91
  Citations

• Characterization of surface exchange reactions used to grow compound films

  Unknown

  87
  Citations

• Low-loss 1.3um GaInNAs saturable bragg reflector for high-power picosecond neodymium lasers

  H.D. Sun;G.J. Valentine;R. Macaluso;S. Calvez

  80
  Citations

• Electronic structure of copper-rich copper-palladium alloys

  R. S. Rao;R. S. Rao;A. Bansil;H. Asonen;M. Pessa

  76
  Citations

• Solid-state effects in M/sub 4,5/N/sub 4,5/N/sub 4,5/ Auger spectra of elements from /sub 49/In to /sub 52/Te

  M. Pessa;A. Vuoristo;M. Vulli;S. Aksela

  76
  Citations

• 1.32-μm GaInNAs-GaAs laser with a low threshold current density

  C.S. Peng;T. Jouhti;P. Laukkanen;E.-M. Pavelescu

  73
  Citations

• Growth-temperature-dependent (self-)annealing-induced blueshift of photoluminescence from 1.3 μm GaInNAs/GaAs quantum wells

  E.-M. Pavelescu;T. Jouhti;M. Dumitrescu;P. J. Klar

  73
  Citations

• Atomic layer epitaxy and characterization of CdTe films grown on CdTe (110) substrates

  Unknown

  73
  Citations

• High-power and broadly tunable GaSb-based optically pumped VECSELs emitting near 2 μm

  Jonna Paajaste;Soile Suomalainen;Riku Koskinen;Antti Härkönen

  72
  Citations

• Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs

  R. Kudrawiec;E.-M. Pavelescu;J. Wagner;G. Sęk

  71
  Citations

• Concentration of interstitial and substitutional nitrogen in GaNxAs1−x

  Unknown

  71
  Citations

• Atomic layer epitaxy of Cd1 − xMnxTe grown on CdTe (111)B substrates

  M.A. Herman;O. Jylhä;M. Pessa

  69
  Citations

• Hg1−xCdxTe‐Hg1−yCdyTe (0≤x, y≤1) heterostructures: Properties, epitaxy, and applications

  Unknown

  69
  Citations

• High-speed resonant cavity light-emitting diodes at 650 nm

  M.M. Dumitrescu;M.J. Saarinen;M.D. Guina;M.V. Pessa

  66
  Citations

• Nanoimprint fabrication of gold nanocones with ~10 nm tips for enhanced optical interactions

  Juha M. Kontio;Hannu Husu;Janne Simonen;Mikko J. Huttunen

  65
  Citations

• Doping and carrier transport in Ga1-3xIn3xNxAs1-x alloys

  Wei Li;Markus Pessa;Juha Toivonen;Harri Lipsanen

  64
  Citations

• Atomic layer epitaxy of CdTe on the polar (111)A and (111)B surfaces of CdTe substrates

  M. Pessa;O. Jylhä;M.A. Herman

  63
  Citations

• New approach to growth of high‐quality GaAs layers on Si substrates

  J. Varrio;H. Asonen;A. Salokatve;M. Pessa

  62
  Citations

• Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers

  H. Asonen;A. Ovtchinnikov;Guodong Zhang;J. Nappi

  59
  Citations