World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
4108
World Ranking
5648
National Ranking
1923

Overview

Mark A. Wistey is affiliated with Texas State University in the United States and is an active researcher in the fields of Engineering and Physics and Astronomy. Their work primarily focuses on semiconductor materials and interfaces, semiconductor materials and devices, and photonic and optical devices.

The scientist's research spans several specialized topics, including:

  • Semiconductor materials and interfaces
  • Semiconductor materials and devices
  • Photonic and Optical Devices
  • Semiconductor Quantum Structures and Devices
  • Surface and Thin Film Phenomena
  • Nanowire Synthesis and Applications
  • Ga2O3 and related materials

In terms of subfields, the primary areas of study include electrical and electronic engineering, atomic and molecular physics and optics, and materials chemistry, with additional work in biomedical engineering and electronic, optical, and magnetic materials.

Wistey has published extensively in several scientific venues. The most frequent publication venues are:

  • Journal of Applied Physics
  • Applied Physics Letters
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
  • IEEE Journal of Selected Topics in Quantum Electronics
  • Crystal Growth & Design

Notable recent papers authored or coauthored by Mark A. Wistey include:

  • The carbon state in dilute germanium carbides, 2021, Journal of Applied Physics
  • Molecular beam epitaxy of highly crystalline GeSnC using CBr4 at low temperatures, 2022, Applied Physics Letters
  • Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy, 2023, Journal of Applied Physics
  • Effects of B and In on the band structure of BGa(In)As alloys, 2022, Journal of Applied Physics
  • Growth of tin-free germanium carbon alloys using carbon tetrabromide (CBr4), 2023, Journal of Applied Physics

Frequent collaborators of Wistey include Seth R. Bank, Qian Meng, Tuhin Dey, Md. Shamim Reza, and Augustus W. Arbogast. These coauthors have contributed regularly to research projects, often appearing together in multiple publications.

Best Publications

  • Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

    David B. Jackrel;Seth Robert Bank;Homan B. Yuen;Mark A. Wistey

  • Novel gate-recessed vertical InAs/GaSb TFETs with record high I ON of 180 μA/μm at V DS = 0.5 V

    Guangle Zhou;R. Li;T. Vasen;M. Qi

  • MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

    Jia Guo;Guowang Li;F. Faria;Yu Cao

  • Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

    Yeqing Lu;Guangle Zhou;Rui Li;Qingmin Liu

  • $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

    U. Singisetti;M.A. Wistey;G.J. Burek;A.K. Baraskar

  • AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V

    Rui Li;Yeqing Lu;Guangle Zhou;Qingmin Liu

  • Recent Progress on 1.55- $\mu{\hbox {m}}$ Dilute-Nitride Lasers

    S.R. Bank;Hopil Bae;L.L. Goddard;H.B. Yuen

  • Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs

    S.R. Bank;M.A. Wistey;L.L. Goddard;H.B. Yuen

  • GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy

    V. Gambin;Wonill Ha;M. Wistey;Homan Yuen

  • The role of Sb in the MBE growth of (GaIn)(NAsSb)

    Kerstin Volz;Vincent Gambin;Wonill Ha;Mark A. Wistey

  • Long-wavelength GaInNAs(Sb) lasers on GaAs

    W. Ha;V. Gambin;S. Bank;M. Wistey

  • Ultralow resistance in situ Ohmic contacts to InGaAs/InP

    Uttam Singisetti;Mark A. Wistey;Jeramy D. Zimmerman;Brian J. Thibeault

  • Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m

    W. Ha;V. Gambin;M. Wistey;S. Bank

  • InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{ m ON}/I_{ m OFF}$ Ratio Near $\hbox{10}^{6}$

    Guangle Zhou;Yeqing Lu;Rui Li;Qin Zhang

  • Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs

    Seth Robert Bank;H. P. Bae;H. B. Yuen;M. A. Wistey

  • Development of GaInNAsSb alloys : Growth, band structure, optical properties and applications

    James S. Harris;R. Kudrawiec;H. B. Yuen;Seth Robert Bank

  • Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm

    S. R. Bank;M. A. Wistey;H. B. Yuen;L. L. Goddard

  • Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate

    Guangle Zhou;Yeqing Lu;Rui Li;Qin Zhang

  • Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs

    Ashish K. Baraskar;Mark A. Wistey;Vibhor Jain;Uttam Singisetti

  • Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0<x⩽0.11)single quantum wells studied by contactless electroreflectance spectroscopy

    R. Kudrawiec;M. Gladysiewicz;J. Misiewicz;H. B. Yuen

  • Long wavelength GaInNAs(Sb) lasers on GaAs

    W. Ha;V. Gambin;S. Bank;M. Wistey

Frequent Co-Authors

Seth R. Bank
Seth R. Bank The University of Texas at Austin
James S. Harris
James S. Harris Stanford University
Mark J. W. Rodwell
Mark J. W. Rodwell University of California, Santa Barbara
Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara
Brian Thibeault
Brian Thibeault University of California, Santa Barbara
Patrick Fay
Patrick Fay University of Notre Dame
Alan Seabaugh
Alan Seabaugh University of Notre Dame
Paul C. McIntyre
Paul C. McIntyre Stanford University
Huili Grace Xing
Huili Grace Xing Cornell University
Susanne Stemmer
Susanne Stemmer University of California, Santa Barbara

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