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Mark A. Wistey

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 35 5648 5421 1924 1794 158 4108

Mark A. Wistey publications per year

The chart shows the history of publications by Mark A. Wistey between 2001 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Mark A. Wistey published across 25 years, from 2001 to 2025, averaging 6.8 papers a year. Output peaked at 25 publications in 2005. 5 of the 171 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 2001 to 2025. Vertical axis: number of publications, 0 to 25. Peak 25 publications in 2005. 2001: 3 publications 2002: 13 publications 2003: 9 publications 2004: 18 publications 2005: 25 publications 2006: 16 publications 2007: 20 publications 2008: 7 publications 2009: 12 publications 2010: 3 publications 2011: 6 publications 2012: 8 publications 2013: 1 publication 2014: 6 publications 2015: 4 publications 2016: 4 publications 2017: 1 publication 2018: 0 publications 2019: 1 publication 2020: 1 publication 2021: 2 publications 2022: 2 publications 2023: 4 publications 2024: 3 publications 2025: 2 publications
2001 2025

171 publications in total across all disciplines

View publications per year as a table
Mark A. Wistey: publications per year, 2001 to 2025
Year Publications
2001 3
2002 13
2003 9
2004 18
2005 25
2006 16
2007 20
2008 7
2009 12
2010 3
2011 6
2012 8
2013 1
2014 6
2015 4
2016 4
2017 1
2018 0
2019 1
2020 1
2021 2
2022 2
2023 4
2024 3
2025 2
Total 171
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Mark A. Wistey publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Mark A. Wistey sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 154–173 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 158 publications — 16th percentile

16% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403 158
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Mark A. Wistey D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Mark A. Wistey sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 35 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 35 D-Index — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236 35
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Mark A. Wistey is affiliated with Texas State University in the United States and is an active researcher in the fields of Engineering and Physics and Astronomy. Their work primarily focuses on semiconductor materials and interfaces, semiconductor materials and devices, and photonic and optical devices.

The scientist's research spans several specialized topics, including:

  • Semiconductor materials and interfaces
  • Semiconductor materials and devices
  • Photonic and Optical Devices
  • Semiconductor Quantum Structures and Devices
  • Surface and Thin Film Phenomena
  • Nanowire Synthesis and Applications
  • Ga2O3 and related materials

In terms of subfields, the primary areas of study include electrical and electronic engineering, atomic and molecular physics and optics, and materials chemistry, with additional work in biomedical engineering and electronic, optical, and magnetic materials.

Wistey has published extensively in several scientific venues. The most frequent publication venues are:

  • Journal of Applied Physics
  • Applied Physics Letters
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
  • IEEE Journal of Selected Topics in Quantum Electronics
  • Crystal Growth & Design

Notable recent papers authored or coauthored by Mark A. Wistey include:

  • The carbon state in dilute germanium carbides, 2021, Journal of Applied Physics
  • Molecular beam epitaxy of highly crystalline GeSnC using CBr4 at low temperatures, 2022, Applied Physics Letters
  • Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy, 2023, Journal of Applied Physics
  • Effects of B and In on the band structure of BGa(In)As alloys, 2022, Journal of Applied Physics
  • Growth of tin-free germanium carbon alloys using carbon tetrabromide (CBr4), 2023, Journal of Applied Physics

Frequent collaborators of Wistey include Seth R. Bank, Qian Meng, Tuhin Dey, Md. Shamim Reza, and Augustus W. Arbogast. These coauthors have contributed regularly to research projects, often appearing together in multiple publications.

Best Publications

  • Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

    David B. Jackrel;Seth Robert Bank;Homan B. Yuen;Mark A. Wistey

  • Novel gate-recessed vertical InAs/GaSb TFETs with record high I ON of 180 μA/μm at V DS = 0.5 V

    Guangle Zhou;R. Li;T. Vasen;M. Qi

  • MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

    Jia Guo;Guowang Li;F. Faria;Yu Cao

  • Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

    Yeqing Lu;Guangle Zhou;Rui Li;Qingmin Liu

  • $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

    U. Singisetti;M.A. Wistey;G.J. Burek;A.K. Baraskar

  • AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V

    Rui Li;Yeqing Lu;Guangle Zhou;Qingmin Liu

  • Recent Progress on 1.55- $\mu{\hbox {m}}$ Dilute-Nitride Lasers

    S.R. Bank;Hopil Bae;L.L. Goddard;H.B. Yuen

  • Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs

    S.R. Bank;M.A. Wistey;L.L. Goddard;H.B. Yuen

  • GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy

    V. Gambin;Wonill Ha;M. Wistey;Homan Yuen

  • The role of Sb in the MBE growth of (GaIn)(NAsSb)

    Kerstin Volz;Vincent Gambin;Wonill Ha;Mark A. Wistey

  • Long-wavelength GaInNAs(Sb) lasers on GaAs

    W. Ha;V. Gambin;S. Bank;M. Wistey

  • Ultralow resistance in situ Ohmic contacts to InGaAs/InP

    Uttam Singisetti;Mark A. Wistey;Jeramy D. Zimmerman;Brian J. Thibeault

  • Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m

    W. Ha;V. Gambin;M. Wistey;S. Bank

  • InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{ m ON}/I_{ m OFF}$ Ratio Near $\hbox{10}^{6}$

    Guangle Zhou;Yeqing Lu;Rui Li;Qin Zhang

  • Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs

    Seth Robert Bank;H. P. Bae;H. B. Yuen;M. A. Wistey

  • Development of GaInNAsSb alloys : Growth, band structure, optical properties and applications

    James S. Harris;R. Kudrawiec;H. B. Yuen;Seth Robert Bank

  • Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm

    S. R. Bank;M. A. Wistey;H. B. Yuen;L. L. Goddard

  • Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate

    Guangle Zhou;Yeqing Lu;Rui Li;Qin Zhang

  • Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs

    Ashish K. Baraskar;Mark A. Wistey;Vibhor Jain;Uttam Singisetti

  • Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0<x⩽0.11)single quantum wells studied by contactless electroreflectance spectroscopy

    R. Kudrawiec;M. Gladysiewicz;J. Misiewicz;H. B. Yuen

  • Long wavelength GaInNAs(Sb) lasers on GaAs

    W. Ha;V. Gambin;S. Bank;M. Wistey

Frequent Co-Authors

Seth R. Bank
Seth R. Bank The University of Texas at Austin
James S. Harris
James S. Harris Stanford University
Mark J. W. Rodwell
Mark J. W. Rodwell University of California, Santa Barbara
Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara
Brian Thibeault
Brian Thibeault University of California, Santa Barbara
Patrick Fay
Patrick Fay University of Notre Dame
Alan Seabaugh
Alan Seabaugh University of Notre Dame
Paul C. McIntyre
Paul C. McIntyre Stanford University
Huili Grace Xing
Huili Grace Xing Cornell University
Susanne Stemmer
Susanne Stemmer University of California, Santa Barbara

External Links

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