World's Best Scientists 2026 revealed!

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 57 1926 1846 755 705 280 17493
Materials Science 57 7844 7582 1946 1805 284 17304

Alan Seabaugh publications per year

The chart shows the history of publications by Alan Seabaugh between 1980 and 2022, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Alan Seabaugh published across 43 years, from 1980 to 2022, averaging 7 papers a year. Output peaked at 20 publications in 2012. 5 of the 299 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 1980 to 2022. Vertical axis: number of publications, 0 to 20. Peak 20 publications in 2012. 1980: 1 publication 1981: 2 publications 1982: 0 publications 1983: 0 publications 1984: 1 publication 1985: 1 publication 1986: 0 publications 1987: 2 publications 1988: 3 publications 1989: 6 publications 1990: 7 publications 1991: 7 publications 1992: 8 publications 1993: 12 publications 1994: 13 publications 1995: 9 publications 1996: 11 publications 1997: 10 publications 1998: 10 publications 1999: 9 publications 2000: 7 publications 2001: 2 publications 2002: 3 publications 2003: 3 publications 2004: 6 publications 2005: 7 publications 2006: 2 publications 2007: 8 publications 2008: 6 publications 2009: 7 publications 2010: 6 publications 2011: 9 publications 2012: 20 publications 2013: 15 publications 2014: 16 publications 2015: 17 publications 2016: 10 publications 2017: 11 publications 2018: 11 publications 2019: 7 publications 2020: 9 publications 2021: 2 publications 2022: 3 publications
1980 2022

299 publications in total across all disciplines

View publications per year as a table
Alan Seabaugh: publications per year, 1980 to 2022
Year Publications
1980 1
1981 2
1982 0
1983 0
1984 1
1985 1
1986 0
1987 2
1988 3
1989 6
1990 7
1991 7
1992 8
1993 12
1994 13
1995 9
1996 11
1997 10
1998 10
1999 9
2000 7
2001 2
2002 3
2003 3
2004 6
2005 7
2006 2
2007 8
2008 6
2009 7
2010 6
2011 9
2012 20
2013 15
2014 16
2015 17
2016 10
2017 11
2018 11
2019 7
2020 9
2021 2
2022 3
Total 299
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Alan Seabaugh publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Alan Seabaugh sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 274–293 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 280 publications — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335 280
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Alan Seabaugh D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Alan Seabaugh sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 57 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 57 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102 57
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Research.com Recognitions

  • 2003 - IEEE Fellow For contributions to high speed and nanoelectronic device and circuit technology.

Overview

Alan Seabaugh is affiliated with the University of Notre Dame in the United States. Their research primarily spans the fields of Engineering and Materials Science, with a strong focus on Electrical and Electronic Engineering as well as Materials Chemistry. Additional subfields of study include Condensed Matter Physics, Biomedical Engineering, and Atomic and Molecular Physics, and Optics.

Their work covers several main topics including:

  • Advanced Memory and Neural Computing
  • 2D Materials and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor Materials and Devices
  • Ferroelectric and Negative Capacitance Devices
  • GaN-based Semiconductor Devices and Materials
  • Ferroelectric and Piezoelectric Materials

Seabaugh has contributed to research published in a variety of scientific journals and conferences. Frequent publication venues include:

  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • Journal of Applied Physics
  • Scientific Reports
  • Israel Journal of Chemistry

Some of the recent papers associated with Seabaugh's research are:

  • "Gallium nitride tunneling field-effect transistors exploiting polarization fields," 2020, Applied Physics Letters
  • "Programming-Pulse Dependence of Ferroelectric Partial Polarization: Insights From a Comparative Study of PZT and HZO Capacitors," 2020, IEEE Transactions on Electron Devices
  • "Quantitative, experimentally-validated, model of MoS2 nanoribbon Schottky field-effect transistors from subthreshold to saturation," 2020, Journal of Applied Physics
  • "Electric-double-layer p-i-n junctions in WSe2," 2020, Scientific Reports
  • "Batch-Fabricated WSe₂-on-Sapphire Field-Effect Transistors Grown by Chemical Vapor Deposition," 2020, IEEE Transactions on Electron Devices

Collaborations have been an element of Seabaugh's work, with frequent co-authors including Paolo Paletti, Sara Fathipour, Sergei Rouvimov, Maja Remškar, and Susan K. Fullerton-Shirey.

In 2003, Seabaugh was recognized as an IEEE Fellow for contributions to high speed and nanoelectronic device and circuit technology.

Best Publications

  • Electronics based on two-dimensional materials

    Gianluca Fiori;Francesco Bonaccorso;Giuseppe Iannaccone;Tomás Palacios

  • Low-Voltage Tunnel Transistors for Beyond CMOS Logic

    A C Seabaugh;Qin Zhang

  • Low-subthreshold-swing tunnel transistors

    Qin Zhang;Wei Zhao;A. Seabaugh

  • Tunnel Field-Effect Transistors: State-of-the-Art

    Hao Lu;Alan Seabaugh

  • Direct extraction of the electron tunneling effective mass in ultrathin SiO2

    B. Brar;G. D. Wilk;A. C. Seabaugh

  • High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

    Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko

  • Device and Architecture Outlook for Beyond CMOS Switches

    Kerry Bernstein;Ralph K Cavin;Wolfgang Porod;Alan Seabaugh

  • Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide

    Hua-Min Li;Daeyeong Lee;Deshun Qu;Xiaochi Liu

  • Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

    Wan Sik Hwang;Maja Remskar;Rusen Yan;Vladimir Protasenko

  • Graphene Nanoribbon Tunnel Transistors

    Qin Zhang;Tian Fang;Huili Xing;A. Seabaugh

  • High-Voltage Field Effect Transistors with Wide-Bandgap {eta}-Ga2O3 Nanomembranes

    Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko

  • A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter

    T.P.E. Broekaert;B. Brar;J.P.A. van der Wagt;A.C. Seabaugh

  • Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

    Wan Sik Hwang;Maja Remskar;Rusen Yan;Vladimir Protasenko

  • RTD/HFET low standby power SRAM gain cell

    A. Seabaugh

  • RTD/HFET low standby power SRAM gain cell

    J.P.A. van der Wagt;A.C. Seabaugh;Iii. E.A. Beam

  • Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

    Rusen Yan;Qin Zhang;Wei Li;Irene Calizo

  • Nanomechanical switches and circuits

    Gary A. Frazier;Alan C. Seabaugh

  • Exfoliated multilayer MoTe2 field-effect transistors

    S. Fathipour;N. Ma;W. S. Hwang;V. Protasenko

  • Novel gate-recessed vertical InAs/GaSb TFETs with record high I ON of 180 μA/μm at V DS = 0.5 V

    Guangle Zhou;R. Li;T. Vasen;M. Qi

  • Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

    Sean L. Rommel;Thomas E. Dillon;M. W. Dashiell;H. Feng

  • Monolithic 4 bit 2 GSps resonant tunneling analog-to-digital converter

    T.P.E. Broekaert;B. Brar;J.P.A. van der Wagt;A.C. Seabaugh

Frequent Co-Authors

Debdeep Jena
Debdeep Jena Cornell University
Huili Grace Xing
Huili Grace Xing Cornell University
Patrick Fay
Patrick Fay University of Notre Dame
Mark A. Reed
Mark A. Reed Yale University
Roger K. Lake
Roger K. Lake University of California, Riverside
Wilfried Haensch
Wilfried Haensch Argonne National Laboratory
Mark A. Wistey
Mark A. Wistey Texas State University
Gerhard Klimeck
Gerhard Klimeck Purdue University West Lafayette
Curt A. Richter
Curt A. Richter National Institute of Standards and Technology
Vladimir Protasenko
Vladimir Protasenko Cornell University

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