World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
57
Citations
17493
World Ranking
1926
National Ranking
754

Materials Science

D-Index
57
Citations
17304
World Ranking
7846
National Ranking
1948

Research.com Recognitions

  • 2003 - IEEE Fellow For contributions to high speed and nanoelectronic device and circuit technology.

Overview

Alan Seabaugh is affiliated with the University of Notre Dame in the United States. Their research primarily spans the fields of Engineering and Materials Science, with a strong focus on Electrical and Electronic Engineering as well as Materials Chemistry. Additional subfields of study include Condensed Matter Physics, Biomedical Engineering, and Atomic and Molecular Physics, and Optics.

Their work covers several main topics including:

  • Advanced Memory and Neural Computing
  • 2D Materials and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor Materials and Devices
  • Ferroelectric and Negative Capacitance Devices
  • GaN-based Semiconductor Devices and Materials
  • Ferroelectric and Piezoelectric Materials

Seabaugh has contributed to research published in a variety of scientific journals and conferences. Frequent publication venues include:

  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • Journal of Applied Physics
  • Scientific Reports
  • Israel Journal of Chemistry

Some of the recent papers associated with Seabaugh's research are:

  • "Gallium nitride tunneling field-effect transistors exploiting polarization fields," 2020, Applied Physics Letters
  • "Programming-Pulse Dependence of Ferroelectric Partial Polarization: Insights From a Comparative Study of PZT and HZO Capacitors," 2020, IEEE Transactions on Electron Devices
  • "Quantitative, experimentally-validated, model of MoS2 nanoribbon Schottky field-effect transistors from subthreshold to saturation," 2020, Journal of Applied Physics
  • "Electric-double-layer p-i-n junctions in WSe2," 2020, Scientific Reports
  • "Batch-Fabricated WSe₂-on-Sapphire Field-Effect Transistors Grown by Chemical Vapor Deposition," 2020, IEEE Transactions on Electron Devices

Collaborations have been an element of Seabaugh's work, with frequent co-authors including Paolo Paletti, Sara Fathipour, Sergei Rouvimov, Maja Remškar, and Susan K. Fullerton-Shirey.

In 2003, Seabaugh was recognized as an IEEE Fellow for contributions to high speed and nanoelectronic device and circuit technology.

Best Publications

  • Electronics based on two-dimensional materials

    Gianluca Fiori;Francesco Bonaccorso;Giuseppe Iannaccone;Tomás Palacios

  • Low-Voltage Tunnel Transistors for Beyond CMOS Logic

    A C Seabaugh;Qin Zhang

  • Low-subthreshold-swing tunnel transistors

    Qin Zhang;Wei Zhao;A. Seabaugh

  • Tunnel Field-Effect Transistors: State-of-the-Art

    Hao Lu;Alan Seabaugh

  • Direct extraction of the electron tunneling effective mass in ultrathin SiO2

    B. Brar;G. D. Wilk;A. C. Seabaugh

  • High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

    Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko

  • Device and Architecture Outlook for Beyond CMOS Switches

    Kerry Bernstein;Ralph K Cavin;Wolfgang Porod;Alan Seabaugh

  • Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide

    Hua-Min Li;Daeyeong Lee;Deshun Qu;Xiaochi Liu

  • Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

    Wan Sik Hwang;Maja Remskar;Rusen Yan;Vladimir Protasenko

  • Graphene Nanoribbon Tunnel Transistors

    Qin Zhang;Tian Fang;Huili Xing;A. Seabaugh

  • High-Voltage Field Effect Transistors with Wide-Bandgap {eta}-Ga2O3 Nanomembranes

    Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko

  • A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter

    T.P.E. Broekaert;B. Brar;J.P.A. van der Wagt;A.C. Seabaugh

  • Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

    Wan Sik Hwang;Maja Remskar;Rusen Yan;Vladimir Protasenko

  • RTD/HFET low standby power SRAM gain cell

    A. Seabaugh

  • RTD/HFET low standby power SRAM gain cell

    J.P.A. van der Wagt;A.C. Seabaugh;Iii. E.A. Beam

  • Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

    Rusen Yan;Qin Zhang;Wei Li;Irene Calizo

  • Nanomechanical switches and circuits

    Gary A. Frazier;Alan C. Seabaugh

  • Exfoliated multilayer MoTe2 field-effect transistors

    S. Fathipour;N. Ma;W. S. Hwang;V. Protasenko

  • Novel gate-recessed vertical InAs/GaSb TFETs with record high I ON of 180 μA/μm at V DS = 0.5 V

    Guangle Zhou;R. Li;T. Vasen;M. Qi

  • Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

    Sean L. Rommel;Thomas E. Dillon;M. W. Dashiell;H. Feng

  • Monolithic 4 bit 2 GSps resonant tunneling analog-to-digital converter

    T.P.E. Broekaert;B. Brar;J.P.A. van der Wagt;A.C. Seabaugh

Frequent Co-Authors

Debdeep Jena
Debdeep Jena Cornell University
Huili Grace Xing
Huili Grace Xing Cornell University
Patrick Fay
Patrick Fay University of Notre Dame
Mark A. Reed
Mark A. Reed Yale University
Roger K. Lake
Roger K. Lake University of California, Riverside
Wilfried Haensch
Wilfried Haensch Argonne National Laboratory
Mark A. Wistey
Mark A. Wistey Texas State University
Gerhard Klimeck
Gerhard Klimeck Purdue University West Lafayette
Curt A. Richter
Curt A. Richter National Institute of Standards and Technology
Vladimir Protasenko
Vladimir Protasenko Cornell University

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