World's Best Scientists 2026 revealed!
Vladimir Protasenko

Vladimir Protasenko

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
5327
World Ranking
5995
National Ranking
2007

Vladimir Protasenko publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Vladimir Protasenko sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 96 publications — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Vladimir Protasenko D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Vladimir Protasenko sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Vladimir Protasenko is affiliated with Cornell University in the United States and has contributed extensively to the fields of Physics and Astronomy, Materials Science, and Engineering. Their research focuses primarily on semiconductor materials and devices, with a notable emphasis on GaN-based semiconductor devices and materials, Ga2O3 and related materials, as well as ZnO doping and properties.

The scientist's work spans several subfields, including Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, and Materials Chemistry.

They have published numerous papers in recognized scientific venues. Frequent publication venues include:

  • Applied Physics Letters
  • arXiv (Cornell University)
  • APL Materials
  • Science Advances
  • Scientific Reports

Some of the recent papers by Protasenko are:

  • Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire, 2021, Science Advances
  • Inactivation of Listeria and E. coli by Deep-UV LED: effect of substrate conditions on inactivation kinetics, 2020, Scientific Reports
  • Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire, 2021, Applied Physics Letters
  • Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures, 2022, APL Materials
  • Controlled Si doping of β-Ga2O3 by molecular beam epitaxy, 2022, Applied Physics Letters

Protasenko collaborates frequently with several researchers, including:

  • Debdeep Jena
  • Huili Grace Xing
  • Jimy Encomendero
  • Yong-Jin Cho
  • Len van Deurzen

The main topics of their research cover:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and devices
  • Advanced Photocatalysis Techniques
  • Quantum and electron transport phenomena

Best Publications

  • Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

    John Simon;Vladimir Protasenko;Chuanxin Lian;Huili Xing

  • Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment

    Rusen Yan;Rusen Yan;Sara Fathipour;Yimo Han;Bo Song;Bo Song

  • High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

    Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko

  • Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

    Wan Sik Hwang;Maja Remskar;Rusen Yan;Vladimir Protasenko

  • Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators.

    Berardi Sensale-Rodriguez;Rusen Yan;Rusen Yan;Subrina Rafique;Mingda Zhu

  • High-Voltage Field Effect Transistors with Wide-Bandgap {eta}-Ga2O3 Nanomembranes

    Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko

  • Solution-Based Straight and Branched CdTe Nanowires

    Masaru Kuno;Omar Ahmad;Vladimir Protasenko;Daniel Bacinello,†,‡ and

  • Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

    Wan Sik Hwang;Maja Remskar;Rusen Yan;Vladimir Protasenko

  • Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

    Zongyang Hu;Zongyang Hu;Kazuki Nomoto;Kazuki Nomoto;Bo Song;Bo Song;Mingda Zhu;Mingda Zhu

  • Exfoliated multilayer MoTe2 field-effect transistors

    S. Fathipour;N. Ma;W. S. Hwang;V. Protasenko

  • Polarization-sensitive nanowire photodetectors based on solution-synthesized CdSe quantum-wire solids.

    Amol Singh;Xiangyang Li;Vladimir Protasenko;Gabor Galantai

  • Terahertz imaging employing graphene modulator arrays

    Berardi Sensale-Rodriguez;Subrina Rafique;Rusen Yan;Mingda Zhu

  • Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire.

    Riena Jinno;Celesta S. Chang;Takeyoshi Onuma;Yongjin Cho

  • Experimental Determination of the Absorption Cross-Section and Molar Extinction Coefficient of CdSe and CdTe Nanowires†

    Vladimir Protasenko;Daniel Bacinello;Masaru Kuno

  • Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

    Debdeep Jena;John Simon;Albert;Wang

  • Disorder‐Induced Optical Heterogeneity in Single CdSe Nanowires

    Vladimir V. Protasenko;Katherine L. Hull;Masaru Kuno

  • MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures

    S. M. Islam;Kevin Lee;Jai Verma;Vladimir Protasenko

  • Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

    Jai Verma;S. M. Islam;Vladimir Protasenko;Prem Kumar Kandaswamy

  • Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures

    Dylan Bayerl;SM Islam;Christina M. Jones;Vladimir Protasenko

  • CdSe nanowires with illumination-enhanced conductivity: Induced dipoles, dielectrophoretic assembly, and field-sensitive emission

    Ronghui Zhou;Hsueh-Chia Chang;Vladimir Protasenko;Masaru Kuno

  • Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

    Debdeep Jena;John Simon;Albert Kejia Wang;Yu Cao

  • Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    Jai Verma;Prem Kumar Kandaswamy;Vladimir Protasenko;Amit Verma

  • N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping

    Jai Verma;John Simon;Vladimir Protasenko;Thomas Kosel

  • High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

    SM Islam;Vladimir Protasenko;Kevin Lee;Sergei Rouvimov

  • GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

    Kazuki Nomoto;Z. Hu;B. Song;M. Zhu

Frequent Co-Authors

Debdeep Jena
Debdeep Jena Cornell University
Huili Grace Xing
Huili Grace Xing Cornell University
Sergei Rouvimov
Sergei Rouvimov University of Notre Dame
Masaru Kuno
Masaru Kuno University of Notre Dame
Kazuki Nomoto
Kazuki Nomoto Cornell University
David A. Muller
David A. Muller Cornell University
Patrick Fay
Patrick Fay University of Notre Dame
Alan Seabaugh
Alan Seabaugh University of Notre Dame
Mark A. Wistey
Mark A. Wistey Texas State University
Chris G. Van de Walle
Chris G. Van de Walle University of California, Santa Barbara

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