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Vladimir Protasenko

Vladimir Protasenko

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
5327
World Ranking
5995
National Ranking
2006

Overview

Vladimir Protasenko is affiliated with Cornell University in the United States and has contributed extensively to the fields of Physics and Astronomy, Materials Science, and Engineering. Their research focuses primarily on semiconductor materials and devices, with a notable emphasis on GaN-based semiconductor devices and materials, Ga2O3 and related materials, as well as ZnO doping and properties.

The scientist's work spans several subfields, including Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, and Materials Chemistry.

They have published numerous papers in recognized scientific venues. Frequent publication venues include:

  • Applied Physics Letters
  • arXiv (Cornell University)
  • APL Materials
  • Science Advances
  • Scientific Reports

Some of the recent papers by Protasenko are:

  • Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire, 2021, Science Advances
  • Inactivation of Listeria and E. coli by Deep-UV LED: effect of substrate conditions on inactivation kinetics, 2020, Scientific Reports
  • Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire, 2021, Applied Physics Letters
  • Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures, 2022, APL Materials
  • Controlled Si doping of β-Ga2O3 by molecular beam epitaxy, 2022, Applied Physics Letters

Protasenko collaborates frequently with several researchers, including:

  • Debdeep Jena
  • Huili Grace Xing
  • Jimy Encomendero
  • Yong-Jin Cho
  • Len van Deurzen

The main topics of their research cover:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and devices
  • Advanced Photocatalysis Techniques
  • Quantum and electron transport phenomena

Best Publications

  • Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

    John Simon;Vladimir Protasenko;Chuanxin Lian;Huili Xing

  • Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment

    Rusen Yan;Rusen Yan;Sara Fathipour;Yimo Han;Bo Song;Bo Song

  • High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

    Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko

  • Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

    Wan Sik Hwang;Maja Remskar;Rusen Yan;Vladimir Protasenko

  • Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators.

    Berardi Sensale-Rodriguez;Rusen Yan;Rusen Yan;Subrina Rafique;Mingda Zhu

  • High-Voltage Field Effect Transistors with Wide-Bandgap {eta}-Ga2O3 Nanomembranes

    Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko

  • Solution-Based Straight and Branched CdTe Nanowires

    Masaru Kuno;Omar Ahmad;Vladimir Protasenko;Daniel Bacinello,†,‡ and

  • Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

    Wan Sik Hwang;Maja Remskar;Rusen Yan;Vladimir Protasenko

  • Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

    Zongyang Hu;Zongyang Hu;Kazuki Nomoto;Kazuki Nomoto;Bo Song;Bo Song;Mingda Zhu;Mingda Zhu

  • Exfoliated multilayer MoTe2 field-effect transistors

    S. Fathipour;N. Ma;W. S. Hwang;V. Protasenko

  • Polarization-sensitive nanowire photodetectors based on solution-synthesized CdSe quantum-wire solids.

    Amol Singh;Xiangyang Li;Vladimir Protasenko;Gabor Galantai

  • Terahertz imaging employing graphene modulator arrays

    Berardi Sensale-Rodriguez;Subrina Rafique;Rusen Yan;Mingda Zhu

  • Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire.

    Riena Jinno;Celesta S. Chang;Takeyoshi Onuma;Yongjin Cho

  • Experimental Determination of the Absorption Cross-Section and Molar Extinction Coefficient of CdSe and CdTe Nanowires†

    Vladimir Protasenko;Daniel Bacinello;Masaru Kuno

  • Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

    Debdeep Jena;John Simon;Albert;Wang

  • Disorder‐Induced Optical Heterogeneity in Single CdSe Nanowires

    Vladimir V. Protasenko;Katherine L. Hull;Masaru Kuno

  • MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures

    S. M. Islam;Kevin Lee;Jai Verma;Vladimir Protasenko

  • Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

    Jai Verma;S. M. Islam;Vladimir Protasenko;Prem Kumar Kandaswamy

  • Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures

    Dylan Bayerl;SM Islam;Christina M. Jones;Vladimir Protasenko

  • CdSe nanowires with illumination-enhanced conductivity: Induced dipoles, dielectrophoretic assembly, and field-sensitive emission

    Ronghui Zhou;Hsueh-Chia Chang;Vladimir Protasenko;Masaru Kuno

  • Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

    Debdeep Jena;John Simon;Albert Kejia Wang;Yu Cao

  • Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    Jai Verma;Prem Kumar Kandaswamy;Vladimir Protasenko;Amit Verma

  • N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping

    Jai Verma;John Simon;Vladimir Protasenko;Thomas Kosel

  • High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

    SM Islam;Vladimir Protasenko;Kevin Lee;Sergei Rouvimov

  • GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

    Kazuki Nomoto;Z. Hu;B. Song;M. Zhu

Frequent Co-Authors

Debdeep Jena
Debdeep Jena Cornell University
Huili Grace Xing
Huili Grace Xing Cornell University
Masaru Kuno
Masaru Kuno University of Notre Dame
Kazuki Nomoto
Kazuki Nomoto Cornell University
Alan Seabaugh
Alan Seabaugh University of Notre Dame
Patrick Fay
Patrick Fay University of Notre Dame
David A. Muller
David A. Muller Cornell University
Mark A. Wistey
Mark A. Wistey Texas State University
Chris G. Van de Walle
Chris G. Van de Walle University of California, Santa Barbara
Darrell G. Schlom
Darrell G. Schlom Cornell University

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