World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
5137
World Ranking
5175
National Ranking
1793

Overview

Kazuki Nomoto is affiliated with Cornell University in the United States. Their research spans multiple fields including Engineering, Physics and Astronomy, and Materials Science. Within these disciplines, Nomoto's work extensively covers subfields such as Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, and Biomedical Engineering.

Their scientific publications focus on specialized topics within semiconductor devices and materials, particularly:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Acoustic Wave Resonator Technologies
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Metal and Thin Film Mechanics
  • Semiconductor Quantum Structures and Devices

Nomoto has contributed to numerous papers across important journals and venues. Some recent works include:

  • Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes (2020, Applied Physics Letters)
  • GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz (2020, IEEE Electron Device Letters)
  • Next generation electronics on the ultrawide-bandgap aluminum nitride platform (2021, Semiconductor Science and Technology)
  • First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz (2020, IEEE Journal of the Electron Devices Society)
  • Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga₂O₃ (2020, IEEE Transactions on Electron Devices)

Nomoto frequently publishes in venues such as Applied Physics Letters (18 publications), IEEE Transactions on Electron Devices (6 publications), arXiv (Cornell University) (5 publications), Applied Physics Express (3 publications), and APL Materials (3 publications).

Collaboration has been an integral part of Nomoto's research, working extensively with several co-authors:

  • Huili Grace Xing (52 co-authored works)
  • Debdeep Jena (51 co-authored works)
  • Wenshen Li (16 co-authored works)
  • James C. M. Hwang (12 co-authored works)
  • Joseph Casamento (11 co-authored works)

Best Publications

  • Enhancement-Mode Ga 2 O 3 Vertical Transistors With Breakdown Voltage >1 kV

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Nicholas Tanen

  • Field-Plated Ga 2 O 3 Trench Schottky Barrier Diodes With a BV 2 / $R_{ ext{on,sp}}$ of up to 0.95 GW/cm 2

    Wenshen Li;Kazuki Nomoto;Zongyang Hu;Debdeep Jena

  • 1.7-kV and 0.55- $ ext{m}\Omega \cdot ext {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

    Kazuki Nomoto;Bo Song;Zongyang Hu;Mingda Zhu

  • Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

    Zongyang Hu;Zongyang Hu;Kazuki Nomoto;Kazuki Nomoto;Bo Song;Bo Song;Mingda Zhu;Mingda Zhu

  • 1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    Mingda Zhu;Bo Song;Meng Qi;Zongyang Hu

  • Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Zexuan Zhang

  • 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2

    Wenshen Li;Zongyang Hu;Kazuki Nomoto;Zexuan Zhang

  • Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

    Y. Hatakeyama;K. Nomoto;N. Kaneda;T. Kawano

  • High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p-n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

    Yoshitomo Hatakeyama;Kazuki Nomoto;Akihisa Terano;Naoki Kaneda

  • Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes

    Wenshen Li;Devansh Saraswat;Yaoyao Long;Kazuki Nomoto

  • High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs

    Austin Hickman;Reet Chaudhuri;Samuel James Bader;Kazuki Nomoto

  • 2.44 kV Ga 2 O 3 vertical trench Schottky barrier diodes with very low reverse leakage current

    Wenshen Li;Zongyang Hu;Kazuki Nomoto;Riena Jinno

  • Next generation electronics on the ultrawide-bandgap aluminum nitride platform

    Austin Lee Hickman;Reet Chaudhuri;Samuel James Bader;Kazuki Nomoto

  • GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

    Lei Li;Kazuki Nomoto;Ming Pan;Wenshen Li

  • Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

    Wenshen Li;Kazuki Nomoto;Manyam Pilla;Ming Pan

  • Single and multi-fin normally-off Ga 2 O 3 vertical transistors with a breakdown voltage over 2.6 kV

    W. Li;K. Nomoto;Z. Hu;T. Nakamura

  • Over 1.0 kV GaN p―n junction diodes on free-standing GaN substrates

    Kazuki Nomoto;Yoshitomo Hatakeyama;Hideo Katayose;Naoki Kaneda

  • Fiber Reinforced Layered Dielectric Nanocomposite

    Muhammad M. Rahman;Anand B. Puthirath;Aparna Adumbumkulath;Thierry Tsafack

  • 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

    Zongyang Hu;Kazuki Nomoto;Meng Qi;Wenshen Li

  • GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

    Kazuki Nomoto;Z. Hu;B. Song;M. Zhu

Frequent Co-Authors

Debdeep Jena
Debdeep Jena Cornell University
Huili Grace Xing
Huili Grace Xing Cornell University
Vladimir Protasenko
Vladimir Protasenko Cornell University
Enrico Zanoni
Enrico Zanoni University of Padua
James C. M. Hwang
James C. M. Hwang Cornell University
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Matteo Meneghini
Matteo Meneghini University of Padua
David A. Muller
David A. Muller Cornell University
Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Kohei Sasaki
Kohei Sasaki Novel Crystal Technology, Inc

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