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Kazuki Nomoto

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 37 5175 4969 1794 1677 157 5137

Kazuki Nomoto publications per year

The chart shows the history of publications by Kazuki Nomoto between 1996 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Kazuki Nomoto published across 31 years, from 1996 to 2026, averaging 5.8 papers a year. Output peaked at 17 publications in 2020. 9 of the 181 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1996 to 2026. Vertical axis: number of publications, 0 to 17. Peak 17 publications in 2020. 1996: 1 publication 1997: 0 publications 1998: 0 publications 1999: 0 publications 2000: 0 publications 2001: 0 publications 2002: 0 publications 2003: 0 publications 2004: 0 publications 2005: 2 publications 2006: 5 publications 2007: 3 publications 2008: 4 publications 2009: 2 publications 2010: 4 publications 2011: 7 publications 2012: 6 publications 2013: 7 publications 2014: 2 publications 2015: 10 publications 2016: 8 publications 2017: 12 publications 2018: 12 publications 2019: 16 publications 2020: 17 publications 2021: 16 publications 2022: 16 publications 2023: 10 publications 2024: 12 publications 2025: 8 publications 2026: 1 publication
1996 2026

181 publications in total across all disciplines

View publications per year as a table
Kazuki Nomoto: publications per year, 1996 to 2026
Year Publications
1996 1
1997 0
1998 0
1999 0
2000 0
2001 0
2002 0
2003 0
2004 0
2005 2
2006 5
2007 3
2008 4
2009 2
2010 4
2011 7
2012 6
2013 7
2014 2
2015 10
2016 8
2017 12
2018 12
2019 16
2020 17
2021 16
2022 16
2023 10
2024 12
2025 8
2026 1
Total 181
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Kazuki Nomoto publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Kazuki Nomoto sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 154–173 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 157 publications — 16th percentile

16% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403 157
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Kazuki Nomoto D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Kazuki Nomoto sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 37 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220 37
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Kazuki Nomoto is affiliated with Cornell University in the United States. Their research spans multiple fields including Engineering, Physics and Astronomy, and Materials Science. Within these disciplines, Nomoto's work extensively covers subfields such as Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, and Biomedical Engineering.

Their scientific publications focus on specialized topics within semiconductor devices and materials, particularly:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Acoustic Wave Resonator Technologies
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Metal and Thin Film Mechanics
  • Semiconductor Quantum Structures and Devices

Nomoto has contributed to numerous papers across important journals and venues. Some recent works include:

  • Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes (2020, Applied Physics Letters)
  • GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz (2020, IEEE Electron Device Letters)
  • Next generation electronics on the ultrawide-bandgap aluminum nitride platform (2021, Semiconductor Science and Technology)
  • First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz (2020, IEEE Journal of the Electron Devices Society)
  • Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga₂O₃ (2020, IEEE Transactions on Electron Devices)

Nomoto frequently publishes in venues such as Applied Physics Letters (18 publications), IEEE Transactions on Electron Devices (6 publications), arXiv (Cornell University) (5 publications), Applied Physics Express (3 publications), and APL Materials (3 publications).

Collaboration has been an integral part of Nomoto's research, working extensively with several co-authors:

  • Huili Grace Xing (52 co-authored works)
  • Debdeep Jena (51 co-authored works)
  • Wenshen Li (16 co-authored works)
  • James C. M. Hwang (12 co-authored works)
  • Joseph Casamento (11 co-authored works)

Best Publications

  • Enhancement-Mode Ga 2 O 3 Vertical Transistors With Breakdown Voltage >1 kV

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Nicholas Tanen

  • Field-Plated Ga 2 O 3 Trench Schottky Barrier Diodes With a BV 2 / $R_{ ext{on,sp}}$ of up to 0.95 GW/cm 2

    Wenshen Li;Kazuki Nomoto;Zongyang Hu;Debdeep Jena

  • 1.7-kV and 0.55- $ ext{m}\Omega \cdot ext {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

    Kazuki Nomoto;Bo Song;Zongyang Hu;Mingda Zhu

  • Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

    Zongyang Hu;Zongyang Hu;Kazuki Nomoto;Kazuki Nomoto;Bo Song;Bo Song;Mingda Zhu;Mingda Zhu

  • 1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    Mingda Zhu;Bo Song;Meng Qi;Zongyang Hu

  • Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Zexuan Zhang

  • 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2

    Wenshen Li;Zongyang Hu;Kazuki Nomoto;Zexuan Zhang

  • Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

    Y. Hatakeyama;K. Nomoto;N. Kaneda;T. Kawano

  • High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p-n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

    Yoshitomo Hatakeyama;Kazuki Nomoto;Akihisa Terano;Naoki Kaneda

  • Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes

    Wenshen Li;Devansh Saraswat;Yaoyao Long;Kazuki Nomoto

  • High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs

    Austin Hickman;Reet Chaudhuri;Samuel James Bader;Kazuki Nomoto

  • 2.44 kV Ga 2 O 3 vertical trench Schottky barrier diodes with very low reverse leakage current

    Wenshen Li;Zongyang Hu;Kazuki Nomoto;Riena Jinno

  • Next generation electronics on the ultrawide-bandgap aluminum nitride platform

    Austin Lee Hickman;Reet Chaudhuri;Samuel James Bader;Kazuki Nomoto

  • GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

    Lei Li;Kazuki Nomoto;Ming Pan;Wenshen Li

  • Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

    Wenshen Li;Kazuki Nomoto;Manyam Pilla;Ming Pan

  • Single and multi-fin normally-off Ga 2 O 3 vertical transistors with a breakdown voltage over 2.6 kV

    W. Li;K. Nomoto;Z. Hu;T. Nakamura

  • Over 1.0 kV GaN p―n junction diodes on free-standing GaN substrates

    Kazuki Nomoto;Yoshitomo Hatakeyama;Hideo Katayose;Naoki Kaneda

  • Fiber Reinforced Layered Dielectric Nanocomposite

    Muhammad M. Rahman;Anand B. Puthirath;Aparna Adumbumkulath;Thierry Tsafack

  • 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

    Zongyang Hu;Kazuki Nomoto;Meng Qi;Wenshen Li

  • GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

    Kazuki Nomoto;Z. Hu;B. Song;M. Zhu

Frequent Co-Authors

Debdeep Jena
Debdeep Jena Cornell University
Huili Grace Xing
Huili Grace Xing Cornell University
Vladimir Protasenko
Vladimir Protasenko Cornell University
Enrico Zanoni
Enrico Zanoni University of Padua
James C. M. Hwang
James C. M. Hwang Cornell University
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Matteo Meneghini
Matteo Meneghini University of Padua
David A. Muller
David A. Muller Cornell University
Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Kohei Sasaki
Kohei Sasaki Novel Crystal Technology, Inc

External Links

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Best Scientists Citing Kazuki Nomoto

Debdeep Jena

Debdeep Jena

Cornell University

Publications: 41

Yue Hao

Yue Hao

Xidian University

Publications: 39

Huili Grace Xing

Huili Grace Xing

Cornell University

Publications: 33

Yuhao Zhang

Yuhao Zhang

Virginia Tech

Publications: 31

Siddharth Rajan

Siddharth Rajan

The Ohio State University

Publications: 28

Jincheng Zhang

Jincheng Zhang

Xidian University

Publications: 26

Hiroshi Amano

Hiroshi Amano

Nagoya University

Publications: 25

Tomas Palacios

Tomas Palacios

MIT

Publications: 24

Hongping Zhao

Hongping Zhao

The Ohio State University

Publications: 22

Marko J. Tadjer

Marko J. Tadjer

United States Naval Research Laboratory

Publications: 21

Hong Zhou

Hong Zhou

Xidian University

Publications: 21

Elison Matioli

Elison Matioli

École Polytechnique Fédérale de Lausanne

Publications: 18

Fan Ren

Fan Ren

University of Florida

Publications: 17

Matteo Meneghini

Matteo Meneghini

University of Padua

Publications: 17

Rong Zhang

Rong Zhang

Nanjing University

Publications: 16

Masataka Higashiwaki

Masataka Higashiwaki

Osaka Metropolitan University

Publications: 16

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