World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
5137
World Ranking
5175
National Ranking
1794

Kazuki Nomoto publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Kazuki Nomoto sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 157 publications — 16th percentile

16% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Kazuki Nomoto D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Kazuki Nomoto sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Kazuki Nomoto is affiliated with Cornell University in the United States. Their research spans multiple fields including Engineering, Physics and Astronomy, and Materials Science. Within these disciplines, Nomoto's work extensively covers subfields such as Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, and Biomedical Engineering.

Their scientific publications focus on specialized topics within semiconductor devices and materials, particularly:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Acoustic Wave Resonator Technologies
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Metal and Thin Film Mechanics
  • Semiconductor Quantum Structures and Devices

Nomoto has contributed to numerous papers across important journals and venues. Some recent works include:

  • Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes (2020, Applied Physics Letters)
  • GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz (2020, IEEE Electron Device Letters)
  • Next generation electronics on the ultrawide-bandgap aluminum nitride platform (2021, Semiconductor Science and Technology)
  • First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz (2020, IEEE Journal of the Electron Devices Society)
  • Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga₂O₃ (2020, IEEE Transactions on Electron Devices)

Nomoto frequently publishes in venues such as Applied Physics Letters (18 publications), IEEE Transactions on Electron Devices (6 publications), arXiv (Cornell University) (5 publications), Applied Physics Express (3 publications), and APL Materials (3 publications).

Collaboration has been an integral part of Nomoto's research, working extensively with several co-authors:

  • Huili Grace Xing (52 co-authored works)
  • Debdeep Jena (51 co-authored works)
  • Wenshen Li (16 co-authored works)
  • James C. M. Hwang (12 co-authored works)
  • Joseph Casamento (11 co-authored works)

Best Publications

  • Enhancement-Mode Ga 2 O 3 Vertical Transistors With Breakdown Voltage >1 kV

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Nicholas Tanen

  • Field-Plated Ga 2 O 3 Trench Schottky Barrier Diodes With a BV 2 / $R_{ ext{on,sp}}$ of up to 0.95 GW/cm 2

    Wenshen Li;Kazuki Nomoto;Zongyang Hu;Debdeep Jena

  • 1.7-kV and 0.55- $ ext{m}\Omega \cdot ext {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

    Kazuki Nomoto;Bo Song;Zongyang Hu;Mingda Zhu

  • Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

    Zongyang Hu;Zongyang Hu;Kazuki Nomoto;Kazuki Nomoto;Bo Song;Bo Song;Mingda Zhu;Mingda Zhu

  • 1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    Mingda Zhu;Bo Song;Meng Qi;Zongyang Hu

  • Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Zexuan Zhang

  • 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2

    Wenshen Li;Zongyang Hu;Kazuki Nomoto;Zexuan Zhang

  • Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

    Y. Hatakeyama;K. Nomoto;N. Kaneda;T. Kawano

  • High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p-n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

    Yoshitomo Hatakeyama;Kazuki Nomoto;Akihisa Terano;Naoki Kaneda

  • Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes

    Wenshen Li;Devansh Saraswat;Yaoyao Long;Kazuki Nomoto

  • High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs

    Austin Hickman;Reet Chaudhuri;Samuel James Bader;Kazuki Nomoto

  • 2.44 kV Ga 2 O 3 vertical trench Schottky barrier diodes with very low reverse leakage current

    Wenshen Li;Zongyang Hu;Kazuki Nomoto;Riena Jinno

  • Next generation electronics on the ultrawide-bandgap aluminum nitride platform

    Austin Lee Hickman;Reet Chaudhuri;Samuel James Bader;Kazuki Nomoto

  • GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

    Lei Li;Kazuki Nomoto;Ming Pan;Wenshen Li

  • Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

    Wenshen Li;Kazuki Nomoto;Manyam Pilla;Ming Pan

  • Single and multi-fin normally-off Ga 2 O 3 vertical transistors with a breakdown voltage over 2.6 kV

    W. Li;K. Nomoto;Z. Hu;T. Nakamura

  • Over 1.0 kV GaN p―n junction diodes on free-standing GaN substrates

    Kazuki Nomoto;Yoshitomo Hatakeyama;Hideo Katayose;Naoki Kaneda

  • Fiber Reinforced Layered Dielectric Nanocomposite

    Muhammad M. Rahman;Anand B. Puthirath;Aparna Adumbumkulath;Thierry Tsafack

  • 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

    Zongyang Hu;Kazuki Nomoto;Meng Qi;Wenshen Li

  • GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

    Kazuki Nomoto;Z. Hu;B. Song;M. Zhu

Frequent Co-Authors

Debdeep Jena
Debdeep Jena Cornell University
Huili Grace Xing
Huili Grace Xing Cornell University
Vladimir Protasenko
Vladimir Protasenko Cornell University
Enrico Zanoni
Enrico Zanoni University of Padua
James C. M. Hwang
James C. M. Hwang Cornell University
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Matteo Meneghini
Matteo Meneghini University of Padua
David A. Muller
David A. Muller Cornell University
Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Kohei Sasaki
Kohei Sasaki Novel Crystal Technology, Inc

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