Hong Zhou

Overview

Best Publications

• Ultra-wide bandgap semiconductor Ga2O3 power diodes

  Unknown

  702
  Citations

• Steep-slope hysteresis-free negative capacitance MoS 2 transistors

  Mengwei Si;Chun-Jung Su;Chunsheng Jiang;Chunsheng Jiang;Nathan J. Conrad

  564
  Citations

• High Performance Depletion/Enhancement-Mode beta-Ga2O3 on Insulator (GOOI) Field-effect Transistors with Record Drain Currents of 600/450 mA/mm

  Hong Zhou;Mengwei Si;Sami Alghmadi;Gang Qiu

  298
  Citations

• Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors

  Mengwei Si;Chun-Jung Su;Chunsheng Jiang;Nathan J. Conrad

  276
  Citations

• Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications

  Jingkai Qin;Gang Qiu;Jie Jian;Hong Zhou

  266
  Citations

• 6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC

  Unknown

  213
  Citations

• {eta}-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5 A/mm and Their Self-heating Effect

  Hong Zhou;Kerry Maize;Gang Qiu;Ali Shakouri

  210
  Citations

• β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

  Hong Zhou;Kerry Maize;Gang Qiu;Ali Shakouri

  208
  Citations

• Field-Plated Lateral $eta$ -Ga 2 O 3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm 2

  Zhuangzhuang Hu;Hong Zhou;Qian Feng;Jincheng Zhang

  192
  Citations

• Al2O3/ $eta $ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing

  Hong Zhou;Sami Alghmadi;Mengwei Si;Gang Qiu

  173
  Citations

• Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

  Daewoong Kwon;Korok Chatterjee;Ava J. Tan;Ajay K. Yadav

  166
  Citations

• Progress in state-of-the-art technologies of Ga2O3 devices

  Chenlu Wang;Jincheng Zhang;Shengrui Xu;Chunfu Zhang

  154
  Citations

• Demonstration of β-Ga 2 O 3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm 2 or a 5A/700 V Handling Capabilities

  Yuanjie Lv;Yuangang Wang;Xingchang Fu;Shaobo Dun

  149
  Citations

• Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation

  Z. H. Liu;G. I. Ng;H. Zhou;S. Arulkumaran

  148
  Citations

• Toward Emerging Gallium Oxide Semiconductors: A Roadmap

  Yuan Yuan;Weibing Hao;Wenxiang Mu;Zhengpeng Wang

  145
  Citations

• A review of the most recent progresses of state-of-art gallium oxide power devices

  Hong Zhou;Jincheng Zhang;Chunfu Zhang;Qian Feng

  140
  Citations

• High-Performance Vertical $eta$ -Ga 2 O 3 Schottky Barrier Diode With Implanted Edge Termination

  Hong Zhou;Qian Feng;Jing Ning;Chunfu Zhang

  134
  Citations

• Lateral β-Ga 2 O 3 MOSFETs With High Power Figure of Merit of 277 MW/cm 2

  Yuanjie Lv;Hongyu Liu;Xingye Zhou;Yuangang Wang

  128
  Citations

• Demonstration of the p-NiO x /n-Ga 2 O 3 Heterojunction Gate FETs and Diodes With BV 2 /R on,sp Figures of Merit of 0.39 GW/cm 2 and 1.38 GW/cm 2

  Chenlu Wang;Hehe Gong;Weina Lei;Yuncong Cai

  126
  Citations

• Recent progress of integrated circuits and optoelectronic chips

  Yue Hao;Shuiying Xiang;Genquan Han;Jincheng Zhang

  124
  Citations

• β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

  Qinglong Yan;Hehe Gong;Jincheng Zhang;Jiandong Ye

  114
  Citations

• Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe5.

  Gang Qiu;Yuchen Du;Adam Charnas;Hong Zhou

  94
  Citations

• Thermodynamic Studies of β-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate

  Hong Zhou;Kerry Maize;Jinhyun Noh;Ali Shakouri

  92
  Citations