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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 36 5336 5125 1840 1719 95 5575

Kelson D. Chabak publications per year

The chart shows the history of publications by Kelson D. Chabak between 2009 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Kelson D. Chabak published across 17 years, from 2009 to 2025, averaging 6.6 papers a year. Output peaked at 18 publications in 2017. 6 of the 112 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 2009 to 2025. Vertical axis: number of publications, 0 to 18. Peak 18 publications in 2017. 2009: 1 publication 2010: 6 publications 2011: 5 publications 2012: 3 publications 2013: 3 publications 2014: 3 publications 2015: 4 publications 2016: 8 publications 2017: 18 publications 2018: 7 publications 2019: 6 publications 2020: 7 publications 2021: 9 publications 2022: 14 publications 2023: 12 publications 2024: 3 publications 2025: 3 publications
2009 2025

112 publications in total across all disciplines

View publications per year as a table
Kelson D. Chabak: publications per year, 2009 to 2025
Year Publications
2009 1
2010 6
2011 5
2012 3
2013 3
2014 3
2015 4
2016 8
2017 18
2018 7
2019 6
2020 7
2021 9
2022 14
2023 12
2024 3
2025 3
Total 112
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Kelson D. Chabak publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Kelson D. Chabak sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 94–113 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 95 publications — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203 95
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Kelson D. Chabak D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Kelson D. Chabak sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 36 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211 36
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Kelson D. Chabak is affiliated with the United States Air Force Research Laboratory in the United States. Their research work primarily focuses on materials science and engineering, with significant contributions to the fields of materials chemistry, electronic, optical and magnetic materials, electrical and electronic engineering, condensed matter physics, and renewable energy, sustainability and the environment.

Chabak's research covers a variety of main topics, including:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • GaN-based semiconductor devices and materials
  • Advanced photocatalysis techniques
  • Semiconductor materials and devices
  • Electronic and structural properties of oxides
  • Silicon carbide semiconductor technologies

Frequent co-authors collaborating with Chabak include:

  • Kyle J. Liddy
  • Andrew J. Green
  • Ahmad E. Islam
  • Neil Moser
  • Kevin Leedy

Chabak has published multiple papers in respected scientific venues, including:

  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • APL Materials
  • IEEE Electron Device Letters
  • ECS Meeting Abstracts

Key recent publications by Chabak include:

  • β-Gallium oxide power electronics, 2022, APL Materials
  • RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band, 2020, IEEE Electron Device Letters
  • Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire, 2021, Applied Physics Letters
  • Toward high voltage radio frequency devices in β-Ga2O3, 2020, Applied Physics Letters
  • β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching, 2022, Applied Physics Letters

Best Publications

  • 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $eta $ -Ga 2 O 3 MOSFETs

    Andrew J. Green;Kelson D. Chabak;Eric R. Heller;Robert C. Fitch

  • Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

    Kelson D. Chabak;Neil Moser;Andrew J. Green;Dennis E. Walker

  • Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

    Yuewei Zhang;Adam Neal;Zhanbo Xia;Chandan Joishi;Chandan Joishi

  • $eta$ -Ga2O3 MOSFETs for Radio Frequency Operation

    Andrew Joseph Green;Kelson D. Chabak;Michele Baldini;Neil Moser

  • Ge-Doped ${eta }$ -Ga2O3 MOSFETs

    Neil Moser;Jonathan McCandless;Antonio Crespo;Kevin Leedy

  • Recessed-Gate Enhancement-Mode $eta $ -Ga2O3 MOSFETs

    Kelson D. Chabak;Jonathan P. McCandless;Neil A. Moser;Andrew J. Green

  • Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

    Nicholas R. Glavin;Kelson D. Chabak;Eric R. Heller;Elizabeth A. Moore

  • High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

    A. Crespo;M.M. Bellot;K.D. Chabak;J.K. Gillespie

  • Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices.

    Adam T. Neal;Shin Mou;Roberto Lopez;Jian V. Li

  • ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

    Andrew J. Green;James K. Gillespie;Robert C. Fitch;Dennis E. Walker

  • Lateral β-Ga2O3 field effect transistors

    Kelson D Chabak;Kevin D Leedy;Andrew J Green;Shin Mou

  • Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates

    K.D. Chabak;J.K. Gillespie;V. Miller;A. Crespo

  • III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power Applications

    Yi Song;Chen Zhang;Ryan Dowdy;Kelson Chabak

  • High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

    Neil A. Moser;Jonathan P. McCandless;Antonio Crespo;Kevin D. Leedy

  • Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

    N. Killat;M. Montes;J. W. Pomeroy;T. Paskova

  • High Aspect Ratio β-Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching.

    Hsien Chih Huang;Munho Kim;Xun Zhan;Kelson Chabak

  • High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth.

    Xin Miao;Kelson Chabak;Kelson Chabak;Chen Zhang;Parsian K. Mohseni

  • RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

    Andrew J. Green;Neil Moser;Nicholas C. Miller;Kyle J. Liddy

  • Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV

    Adam T. Neal;Shin Mou;Roberto Lopez;Jian V. Li

  • Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

    Robert C. Fitch;Dennis E. Walker;Andrew J. Green;Stephen E. Tetlak

Frequent Co-Authors

Gregg H. Jessen
Gregg H. Jessen United States Air Force Research Laboratory
Xiuling Li
Xiuling Li University of Illinois at Urbana-Champaign
David C. Look
David C. Look Wright State University
Martin Kuball
Martin Kuball University of Bristol
Roy G. Gordon
Roy G. Gordon Harvard University
Peide D. Ye
Peide D. Ye Purdue University West Lafayette
Hong Zhou
Hong Zhou Xidian University
Ümit Özgür
Ümit Özgür Virginia Commonwealth University
Fan Ren
Fan Ren University of Florida
Stephen J. Pearton
Stephen J. Pearton University of Florida

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