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Electronics and Electrical Engineering

D-Index
36
Citations
5575
World Ranking
5336
National Ranking
1839

Overview

Kelson D. Chabak is affiliated with the United States Air Force Research Laboratory in the United States. Their research work primarily focuses on materials science and engineering, with significant contributions to the fields of materials chemistry, electronic, optical and magnetic materials, electrical and electronic engineering, condensed matter physics, and renewable energy, sustainability and the environment.

Chabak's research covers a variety of main topics, including:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • GaN-based semiconductor devices and materials
  • Advanced photocatalysis techniques
  • Semiconductor materials and devices
  • Electronic and structural properties of oxides
  • Silicon carbide semiconductor technologies

Frequent co-authors collaborating with Chabak include:

  • Kyle J. Liddy
  • Andrew J. Green
  • Ahmad E. Islam
  • Neil Moser
  • Kevin Leedy

Chabak has published multiple papers in respected scientific venues, including:

  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • APL Materials
  • IEEE Electron Device Letters
  • ECS Meeting Abstracts

Key recent publications by Chabak include:

  • β-Gallium oxide power electronics, 2022, APL Materials
  • RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band, 2020, IEEE Electron Device Letters
  • Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire, 2021, Applied Physics Letters
  • Toward high voltage radio frequency devices in β-Ga2O3, 2020, Applied Physics Letters
  • β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching, 2022, Applied Physics Letters

Best Publications

  • 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $eta $ -Ga 2 O 3 MOSFETs

    Andrew J. Green;Kelson D. Chabak;Eric R. Heller;Robert C. Fitch

  • Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

    Kelson D. Chabak;Neil Moser;Andrew J. Green;Dennis E. Walker

  • Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

    Yuewei Zhang;Adam Neal;Zhanbo Xia;Chandan Joishi;Chandan Joishi

  • $eta$ -Ga2O3 MOSFETs for Radio Frequency Operation

    Andrew Joseph Green;Kelson D. Chabak;Michele Baldini;Neil Moser

  • Ge-Doped ${eta }$ -Ga2O3 MOSFETs

    Neil Moser;Jonathan McCandless;Antonio Crespo;Kevin Leedy

  • Recessed-Gate Enhancement-Mode $eta $ -Ga2O3 MOSFETs

    Kelson D. Chabak;Jonathan P. McCandless;Neil A. Moser;Andrew J. Green

  • Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

    Nicholas R. Glavin;Kelson D. Chabak;Eric R. Heller;Elizabeth A. Moore

  • High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

    A. Crespo;M.M. Bellot;K.D. Chabak;J.K. Gillespie

  • Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices.

    Adam T. Neal;Shin Mou;Roberto Lopez;Jian V. Li

  • ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

    Andrew J. Green;James K. Gillespie;Robert C. Fitch;Dennis E. Walker

  • Lateral β-Ga2O3 field effect transistors

    Kelson D Chabak;Kevin D Leedy;Andrew J Green;Shin Mou

  • Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates

    K.D. Chabak;J.K. Gillespie;V. Miller;A. Crespo

  • III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power Applications

    Yi Song;Chen Zhang;Ryan Dowdy;Kelson Chabak

  • High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

    Neil A. Moser;Jonathan P. McCandless;Antonio Crespo;Kevin D. Leedy

  • Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

    N. Killat;M. Montes;J. W. Pomeroy;T. Paskova

  • High Aspect Ratio β-Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching.

    Hsien Chih Huang;Munho Kim;Xun Zhan;Kelson Chabak

  • High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth.

    Xin Miao;Kelson Chabak;Kelson Chabak;Chen Zhang;Parsian K. Mohseni

  • RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

    Andrew J. Green;Neil Moser;Nicholas C. Miller;Kyle J. Liddy

  • Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV

    Adam T. Neal;Shin Mou;Roberto Lopez;Jian V. Li

  • Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

    Robert C. Fitch;Dennis E. Walker;Andrew J. Green;Stephen E. Tetlak

Frequent Co-Authors

Gregg H. Jessen
Gregg H. Jessen United States Air Force Research Laboratory
Xiuling Li
Xiuling Li University of Illinois at Urbana-Champaign
David C. Look
David C. Look Wright State University
Martin Kuball
Martin Kuball University of Bristol
Roy G. Gordon
Roy G. Gordon Harvard University
Peide D. Ye
Peide D. Ye Purdue University West Lafayette
Hong Zhou
Hong Zhou Xidian University
Ümit Özgür
Ümit Özgür Virginia Commonwealth University
Fan Ren
Fan Ren University of Florida
Stephen J. Pearton
Stephen J. Pearton University of Florida

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