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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
5747
World Ranking
6219
National Ranking
2053

Overview

Gregg H. Jessen is affiliated with the United States Air Force Research Laboratory in the United States. Their research primarily focuses on materials science, with a specific emphasis on electronic, optical, and magnetic materials as well as materials chemistry and condensed matter physics. Their work also touches on renewable energy, sustainability, and environmental applications.

The main topics of their research include Ga2O3 and related materials, ZnO doping and properties, GaN-based semiconductor devices and materials, advanced photocatalysis techniques, and the electronic and structural properties of oxides.

Frequent co-authors of Gregg H. Jessen include Kelson D. Chabak, Neil Moser, Kyle J. Liddy, Andrew J. Green, and Eric R. Heller.

Publication venues where Jessen has contributed include:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • IEEE Spectrum
  • arXiv (Cornell University)

Notable recent papers authored or co-authored by Gregg H. Jessen are:

  • Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band, 2020, IEEE Electron Device Letters
  • Thermally-Aware Layout Design of β-Ga₂O₃ Lateral MOSFETs, 2022, IEEE Transactions on Electron Devices
  • Characteristics of grafted monocrystalline Si/ β -Ga2O3p-n heterojunction, 2024, Applied Physics Letters
  • The Supercharged Semiconductor: Gallium oxide could make powerful radios and switch thousands of volts, 2021, IEEE Spectrum
  • Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting, 2023, arXiv (Cornell University)

Best Publications

  • Guest Editorial: The dawn of gallium oxide microelectronics

    Masataka Higashiwaki;Gregg H. Jessen

  • 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $eta $ -Ga 2 O 3 MOSFETs

    Andrew J. Green;Kelson D. Chabak;Eric R. Heller;Robert C. Fitch

  • Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

    G.H. Jessen;R.C. Fitch;J.K. Gillespie;G. Via

  • Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

    Kelson D. Chabak;Neil Moser;Andrew J. Green;Dennis E. Walker

  • Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

    Yuewei Zhang;Adam Neal;Zhanbo Xia;Chandan Joishi;Chandan Joishi

  • $eta$ -Ga2O3 MOSFETs for Radio Frequency Operation

    Andrew Joseph Green;Kelson D. Chabak;Michele Baldini;Neil Moser

  • Ge-Doped ${eta }$ -Ga2O3 MOSFETs

    Neil Moser;Jonathan McCandless;Antonio Crespo;Kevin Leedy

  • Recessed-Gate Enhancement-Mode $eta $ -Ga2O3 MOSFETs

    Kelson D. Chabak;Jonathan P. McCandless;Neil A. Moser;Andrew J. Green

  • Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation

    Robert S. Okojie;Ming Xhang;Pirouz Pirouz;Sergey Tumakha

  • Dominant effect of near-interface native point defects on ZnO Schottky barriers

    L. J. Brillson;H. L. Mosbacker;M. J. Hetzer;Y. Strzhemechny

  • High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

    A. Crespo;M.M. Bellot;K.D. Chabak;J.K. Gillespie

  • Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices.

    Adam T. Neal;Shin Mou;Roberto Lopez;Jian V. Li

  • ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

    Andrew J. Green;James K. Gillespie;Robert C. Fitch;Dennis E. Walker

  • Lateral β-Ga2O3 field effect transistors

    Kelson D Chabak;Kevin D Leedy;Andrew J Green;Shin Mou

  • Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates

    K.D. Chabak;J.K. Gillespie;V. Miller;A. Crespo

  • High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

    Neil A. Moser;Jonathan P. McCandless;Antonio Crespo;Kevin D. Leedy

  • Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors

    Hung-Ta Wang;B. S. Kang;F. Ren;R. C. Fitch

  • Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV

    Adam T. Neal;Shin Mou;Roberto Lopez;Jian V. Li

  • Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

    Robert C. Fitch;Dennis E. Walker;Andrew J. Green;Stephen E. Tetlak

  • AlGaN/GaN HEMT on Diamond Technology Demonstration

    G. Jessen;J. Gillespie;G. Via;A. Crespo

Frequent Co-Authors

Kelson D. Chabak
Kelson D. Chabak United States Air Force Research Laboratory
David C. Look
David C. Look Wright State University
Leonard J. Brillson
Leonard J. Brillson The Ohio State University
James S. Speck
James S. Speck University of California, Santa Barbara
Fan Ren
Fan Ren University of Florida
Brent P. Gila
Brent P. Gila University of Florida
C. R. Abernathy
C. R. Abernathy University of Florida
Hongping Zhao
Hongping Zhao The Ohio State University
Thomas N. Jackson
Thomas N. Jackson Pennsylvania State University
Joseph P. Heremans
Joseph P. Heremans The Ohio State University

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