World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
5747
World Ranking
6218
National Ranking
2054

Gregg H. Jessen publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Gregg H. Jessen sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 83 publications — 2nd percentile

2% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Gregg H. Jessen D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Gregg H. Jessen sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 32 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Gregg H. Jessen is affiliated with the United States Air Force Research Laboratory in the United States. Their research primarily focuses on materials science, with a specific emphasis on electronic, optical, and magnetic materials as well as materials chemistry and condensed matter physics. Their work also touches on renewable energy, sustainability, and environmental applications.

The main topics of their research include Ga2O3 and related materials, ZnO doping and properties, GaN-based semiconductor devices and materials, advanced photocatalysis techniques, and the electronic and structural properties of oxides.

Frequent co-authors of Gregg H. Jessen include Kelson D. Chabak, Neil Moser, Kyle J. Liddy, Andrew J. Green, and Eric R. Heller.

Publication venues where Jessen has contributed include:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • IEEE Spectrum
  • arXiv (Cornell University)

Notable recent papers authored or co-authored by Gregg H. Jessen are:

  • Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band, 2020, IEEE Electron Device Letters
  • Thermally-Aware Layout Design of β-Ga₂O₃ Lateral MOSFETs, 2022, IEEE Transactions on Electron Devices
  • Characteristics of grafted monocrystalline Si/ β -Ga2O3p-n heterojunction, 2024, Applied Physics Letters
  • The Supercharged Semiconductor: Gallium oxide could make powerful radios and switch thousands of volts, 2021, IEEE Spectrum
  • Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting, 2023, arXiv (Cornell University)

Best Publications

  • Guest Editorial: The dawn of gallium oxide microelectronics

    Masataka Higashiwaki;Gregg H. Jessen

  • 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $eta $ -Ga 2 O 3 MOSFETs

    Andrew J. Green;Kelson D. Chabak;Eric R. Heller;Robert C. Fitch

  • Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

    G.H. Jessen;R.C. Fitch;J.K. Gillespie;G. Via

  • Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

    Kelson D. Chabak;Neil Moser;Andrew J. Green;Dennis E. Walker

  • Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

    Yuewei Zhang;Adam Neal;Zhanbo Xia;Chandan Joishi;Chandan Joishi

  • $eta$ -Ga2O3 MOSFETs for Radio Frequency Operation

    Andrew Joseph Green;Kelson D. Chabak;Michele Baldini;Neil Moser

  • Ge-Doped ${eta }$ -Ga2O3 MOSFETs

    Neil Moser;Jonathan McCandless;Antonio Crespo;Kevin Leedy

  • Recessed-Gate Enhancement-Mode $eta $ -Ga2O3 MOSFETs

    Kelson D. Chabak;Jonathan P. McCandless;Neil A. Moser;Andrew J. Green

  • Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation

    Robert S. Okojie;Ming Xhang;Pirouz Pirouz;Sergey Tumakha

  • Dominant effect of near-interface native point defects on ZnO Schottky barriers

    L. J. Brillson;H. L. Mosbacker;M. J. Hetzer;Y. Strzhemechny

  • High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

    A. Crespo;M.M. Bellot;K.D. Chabak;J.K. Gillespie

  • Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices.

    Adam T. Neal;Shin Mou;Roberto Lopez;Jian V. Li

  • ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

    Andrew J. Green;James K. Gillespie;Robert C. Fitch;Dennis E. Walker

  • Lateral β-Ga2O3 field effect transistors

    Kelson D Chabak;Kevin D Leedy;Andrew J Green;Shin Mou

  • Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates

    K.D. Chabak;J.K. Gillespie;V. Miller;A. Crespo

  • High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

    Neil A. Moser;Jonathan P. McCandless;Antonio Crespo;Kevin D. Leedy

  • Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors

    Hung-Ta Wang;B. S. Kang;F. Ren;R. C. Fitch

  • Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV

    Adam T. Neal;Shin Mou;Roberto Lopez;Jian V. Li

  • Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

    Robert C. Fitch;Dennis E. Walker;Andrew J. Green;Stephen E. Tetlak

  • AlGaN/GaN HEMT on Diamond Technology Demonstration

    G. Jessen;J. Gillespie;G. Via;A. Crespo

Frequent Co-Authors

Kelson D. Chabak
Kelson D. Chabak United States Air Force Research Laboratory
David C. Look
David C. Look Wright State University
Leonard J. Brillson
Leonard J. Brillson The Ohio State University
James S. Speck
James S. Speck University of California, Santa Barbara
Fan Ren
Fan Ren University of Florida
Brent P. Gila
Brent P. Gila University of Florida
C. R. Abernathy
C. R. Abernathy University of Florida
Hongping Zhao
Hongping Zhao The Ohio State University
Thomas N. Jackson
Thomas N. Jackson Pennsylvania State University
Joseph P. Heremans
Joseph P. Heremans The Ohio State University

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