2015 - Fellow of the Materials Research Society For contributions to the development of compound semiconductor materials growth using the chemical beam epitaxy method.
2014 - Fellow of the American Association for the Advancement of Science (AAAS)
C. R. Abernathy focuses on Analytical chemistry, Optoelectronics, Molecular beam epitaxy, Annealing and Ion implantation. His Analytical chemistry research is multidisciplinary, incorporating perspectives in Etching, Ion, Doping and Nitride. His Etching research focuses on Thin film and how it relates to Activation energy.
His Optoelectronics research is multidisciplinary, incorporating elements of Transistor and Gate dielectric. C. R. Abernathy interconnects Magnetic semiconductor, Condensed matter physics, Ferromagnetism and Mineralogy in the investigation of issues within Molecular beam epitaxy. His study on Ion implantation also encompasses disciplines like
The scientist’s investigation covers issues in Analytical chemistry, Optoelectronics, Molecular beam epitaxy, Doping and Annealing. While the research belongs to areas of Analytical chemistry, he spends his time largely on the problem of Etching, intersecting his research to questions surrounding Nitride, Semiconductor and Sputtering. C. R. Abernathy has included themes like Transistor and Passivation in his Optoelectronics study.
The Molecular beam epitaxy study combines topics in areas such as Thin film, Condensed matter physics, Ferromagnetism and Mineralogy. His studies deal with areas such as Luminescence and Photoluminescence as well as Doping. His Annealing research is multidisciplinary, relying on both Acceptor, Ion implantation, Ohmic contact, Electrical resistivity and conductivity and Thermal stability.
C. R. Abernathy spends much of his time researching Optoelectronics, Condensed matter physics, Analytical chemistry, Molecular beam epitaxy and Wide-bandgap semiconductor. His biological study spans a wide range of topics, including Transistor and High-electron-mobility transistor. His work on Ferromagnetism, Spin-½ and Spintronics is typically connected to Spin relaxation as part of general Condensed matter physics study, connecting several disciplines of science.
His Analytical chemistry study integrates concerns from other disciplines, such as Epitaxy, Thin film, Annealing and Ion, Ion implantation. His work deals with themes such as Crystal growth, Doping, Photoluminescence, Electrical resistivity and conductivity and Band gap, which intersect with Molecular beam epitaxy. His Band gap study combines topics in areas such as Gate dielectric, Heterojunction and Electronic band structure.
C. R. Abernathy mostly deals with Optoelectronics, Wide-bandgap semiconductor, Molecular beam epitaxy, Ferromagnetism and Transistor. His research in Optoelectronics intersects with topics in Oxide and High-electron-mobility transistor. His Molecular beam epitaxy study incorporates themes from Crystallography, Crystal growth, Band gap and Thin film.
His Ferromagnetism research is multidisciplinary, incorporating elements of Doping and Photoluminescence. His work deals with themes such as Order of magnitude and Analytical chemistry, which intersect with Transistor. When carried out as part of a general Analytical chemistry research project, his work on Secondary ion mass spectrometry is frequently linked to work in Ambient pressure, therefore connecting diverse disciplines of study.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
GaN-based diodes and transistors for chemical, gas, biological and pressure sensing
S J Pearton;B S Kang;Suku Kim;F Ren.
Journal of Physics: Condensed Matter (2004)
Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors
F. Ren;M. Hong;S. N. G. Chu;M. A. Marcus.
Applied Physics Letters (1998)
Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
B. Luo;J. W. Johnson;J. Kim;R. M. Mehandru.
Applied Physics Letters (2002)
AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation
R. Mehandru;B. Luo;J. Kim;F. Ren.
Applied Physics Letters (2003)
Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes
B. S. Kang;S. Kim;F. Ren;J. W. Johnson.
Applied Physics Letters (2004)
High temperature electron cyclotron resonance etching of GaN, InN, and AlN
R. J. Shul;S. P. Kilcoyne;M. Hagerott Crawford;J. E. Parmeter.
Applied Physics Letters (1995)
Ferromagnetism in Mn- and Co-implanted ZnO nanorods
K. Ip;R. M. Frazier;Y. W. Heo;D. P. Norton.
Journal of Vacuum Science & Technology B (2003)
Implant‐induced high‐resistivity regions in InP and InGaAs
S. J. Pearton;C. R. Abernathy;M. B. Panish;R. A. Hamm.
Journal of Applied Physics (1989)
Gd2O3/GaN metal-oxide-semiconductor field-effect transistor
J. W. Johnson;B. Luo;F. Ren;B. P. Gila.
Applied Physics Letters (2000)
Chromosome 17 loss-of-heterozygosity studies in benign and malignant tumors in neurofibromatosis type 1.
Sonja A. Rasmussen;Jennifer Overman;Susanne A.M. Thomson;Steven D. Colman.
Genes, Chromosomes and Cancer (2000)
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