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D-Index & Metrics

Materials Science

D-Index
51
Citations
9717
World Ranking
9878
National Ranking
2381

Ian T. Ferguson publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Ian T. Ferguson sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 462 publications — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Ian T. Ferguson D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Ian T. Ferguson sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 51 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2009 - SPIE Fellow

Overview

Ian T. Ferguson is affiliated with Kennesaw State University in the United States. Their research primarily focuses on materials science, engineering, and physics and astronomy with a significant portion of work dedicated to materials chemistry, electrical and electronic engineering, and condensed matter physics.

The main topics covered in Ferguson's research include:

  • ZnO doping and properties
  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Metal and thin film mechanics
  • Gas sensing nanomaterials and sensors
  • Semiconductor materials and devices
  • Acoustic wave resonator technologies

Frequent publication venues for Ferguson's work are:

  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Materials
  • Semiconductor Science and Technology
  • Nanomaterials
  • Journal of Alloys and Compounds

Some of the recent papers published by Ferguson include:

  • Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H-SiC, 2020, Journal of Alloys and Compounds
  • Structural and optical properties of (Zn,Mn)O thin films prepared by atomic layer deposition, 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Advances in growth, doping, and devices and applications of zinc oxide, 2024, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Optical and surface properties of 3C-SiC thin epitaxial films grown at different temperatures on 4H-SiC substrates, 2021, Superlattices and Microstructures
  • Effects of annealing temperature, thickness and substrates on optical properties of m-plane ZnO films studied by photoluminescence and temperature dependent ellipsometry, 2020, Journal of Alloys and Compounds

Frequent co-authors collaborating with Ferguson include:

  • Zhe Chuan Feng
  • Lingyu Wan
  • Benjamin Klein
  • Jeffrey Yiin
  • Vishal Saravade

Ferguson was awarded the title of SPIE Fellow in 2009.

Best Publications

  • Design and characterization of GaN∕InGaN solar cells

    Omkar Jani;Ian Ferguson;Christiana Honsberg;Sarah Kurtz

  • Effects of Blue Light on the Circadian System and Eye Physiology

    Gianluca Tosini;Ian Ferguson;Kazuo Tsubota

  • Very high efficiency solar cell modules

    Allen Barnett;Douglas Kirkpatrick;Christiana Honsberg;Duncan Moore

  • High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

    P. Kung;A. Saxler;X. Zhang;D. Walker

  • Spatial characterization of doped SiC wafers by Raman spectroscopy

    J. C. Burton;L. Sun;M. Pophristic;S. J. Lukacs

  • Single-crystal aluminum nitride nanomechanical resonators

    A. N. Cleland;M. Pophristic;I. Ferguson

  • First- and second-order Raman scattering from semi-insulating 4H-SiC

    J. C. Burton;L. Sun;F. H. Long;Z. C. Feng

  • Magnetic properties of bulk Zn1-xMnxO and Zn1-xCoxO single crystals

    M. H. Kane;K. Shalini;C. J. Summers;R. Varatharajan

  • Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy

    D. I. Florescu;V. M. Asnin;Fred H. Pollak;A. M. Jones

  • Metal oxides for thermoelectric power generation and beyond

    Yining Feng;Xiaodong Jiang;Ehsan Ghafari;Bahadir Kucukgok

  • Effect of surface treatment on thermal stability of the hemp-PLA composites: Correlation of activation energy with thermal degradation

    Shubhashini Oza;Haibin Ning;Ian Ferguson;Na Lu

  • Zinc oxide as an active n-layer and antireflection coating for silicon based heterojunction solar cell

    Babar Hussain;Abasifreke Ebong;Ian Ferguson;Ian Ferguson

  • III-nitrides for energy production: photovoltaic and thermoelectric applications

    Na Lu;Ian Ferguson

  • A method and apparatus for performing wavelength-conversion using phosphors withlight emitting diodes

    Garbuzov Dmitri Z;Connolly John C;Karlicek Robert F;Ferguson Ian T

  • Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN

    M. Wraback;H. Shen;J. C. Carrano;T. Li

  • Time-resolved photoluminescence measurements of InGaN light-emitting diodes

    M. Pophristic;F. H. Long;C. Tran;I. T. Ferguson

  • Composition, structure, and mechanical properties of hemp fiber reinforced composite with recycled high-density polyethylene matrix

    Na Lu;Robert H Swan;Ian Ferguson

  • HIGH SPATIAL RESOLUTION THERMAL CONDUCTIVITY OF LATERAL EPITAXIAL OVERGROWN GAN/SAPPHIRE (0001) USING A SCANNING THERMAL MICROSCOPE

    V. M. Asnin;Fred H. Pollak;J. Ramer;M. Schurman

  • Review—The Current and Emerging Applications of the III-Nitrides

    Chuanle Zhou;Amirhossein Ghods;Vishal G. Saravade;Paresh V. Patel

  • Electrical and magneto-optical of MBE InAs on GaAs

    P D Wang;S N Holmes;Tan Le;R A Stradling

  • Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

    Zhiqiang Liu;Tongbo Wei;Enqing Guo;Xiaoyan Yi

  • Materials Science Forum

    I. Ferguson;C. Liang;A. Tran;R. F. Karlicek

Frequent Co-Authors

Christopher J. Summers
Christopher J. Summers Georgia Institute of Technology
Axel Hoffmann
Axel Hoffmann University of Illinois at Urbana-Champaign
Robert L. Opila
Robert L. Opila University of Delaware
Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
Tae Yeon Seong
Tae Yeon Seong Korea University
H. C. Liu
H. C. Liu Shanghai Jiao Tong University
Jinmin Li
Jinmin Li Chinese Academy of Sciences
Junxi Wang
Junxi Wang Chinese Academy of Sciences
Manijeh Razeghi
Manijeh Razeghi Northwestern University
Jer-Ren Yang
Jer-Ren Yang National Taiwan University

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