2026 Ian T. Ferguson: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	51	9880	9542	2383	2213	462	9717

Research.com Recognitions

2009 - SPIE Fellow

Overview

Ian T. Ferguson is affiliated with Kennesaw State University in the United States. Their research primarily focuses on materials science, engineering, and physics and astronomy with a significant portion of work dedicated to materials chemistry, electrical and electronic engineering, and condensed matter physics.

The main topics covered in Ferguson's research include:

ZnO doping and properties
GaN-based semiconductor devices and materials
Ga2O3 and related materials
Metal and thin film mechanics
Gas sensing nanomaterials and sensors
Semiconductor materials and devices
Acoustic wave resonator technologies

Frequent publication venues for Ferguson's work are:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Materials
Semiconductor Science and Technology
Nanomaterials
Journal of Alloys and Compounds

Some of the recent papers published by Ferguson include:

Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H-SiC, 2020, Journal of Alloys and Compounds
Structural and optical properties of (Zn,Mn)O thin films prepared by atomic layer deposition, 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Advances in growth, doping, and devices and applications of zinc oxide, 2024, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Optical and surface properties of 3C-SiC thin epitaxial films grown at different temperatures on 4H-SiC substrates, 2021, Superlattices and Microstructures
Effects of annealing temperature, thickness and substrates on optical properties of m-plane ZnO films studied by photoluminescence and temperature dependent ellipsometry, 2020, Journal of Alloys and Compounds

Frequent co-authors collaborating with Ferguson include:

Zhe Chuan Feng
Lingyu Wan
Benjamin Klein
Jeffrey Yiin
Vishal Saravade

Ferguson was awarded the title of SPIE Fellow in 2009.

Best Publications

Design and characterization of GaN∕InGaN solar cells

Omkar Jani;Ian Ferguson;Christiana Honsberg;Sarah Kurtz

824
Citations
Effects of Blue Light on the Circadian System and Eye Physiology

Gianluca Tosini;Ian Ferguson;Kazuo Tsubota

597
Citations
Very high efficiency solar cell modules

Allen Barnett;Douglas Kirkpatrick;Christiana Honsberg;Duncan Moore

281
Citations
High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

P. Kung;A. Saxler;X. Zhang;D. Walker

252
Citations
Spatial characterization of doped SiC wafers by Raman spectroscopy

J. C. Burton;L. Sun;M. Pophristic;S. J. Lukacs

248
Citations
Single-crystal aluminum nitride nanomechanical resonators

A. N. Cleland;M. Pophristic;I. Ferguson

243
Citations
First- and second-order Raman scattering from semi-insulating 4H-SiC

J. C. Burton;L. Sun;F. H. Long;Z. C. Feng

213
Citations
Magnetic properties of bulk Zn1-xMnxO and Zn1-xCoxO single crystals

M. H. Kane;K. Shalini;C. J. Summers;R. Varatharajan

188
Citations
Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy

D. I. Florescu;V. M. Asnin;Fred H. Pollak;A. M. Jones

161
Citations
Metal oxides for thermoelectric power generation and beyond

Yining Feng;Xiaodong Jiang;Ehsan Ghafari;Bahadir Kucukgok

159
Citations
Effect of surface treatment on thermal stability of the hemp-PLA composites: Correlation of activation energy with thermal degradation

Shubhashini Oza;Haibin Ning;Ian Ferguson;Na Lu

154
Citations
Zinc oxide as an active n-layer and antireflection coating for silicon based heterojunction solar cell

Babar Hussain;Abasifreke Ebong;Ian Ferguson;Ian Ferguson

143
Citations
III-nitrides for energy production: photovoltaic and thermoelectric applications

Na Lu;Ian Ferguson

136
Citations
A method and apparatus for performing wavelength-conversion using phosphors withlight emitting diodes

Garbuzov Dmitri Z;Connolly John C;Karlicek Robert F;Ferguson Ian T

136
Citations
Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN

M. Wraback;H. Shen;J. C. Carrano;T. Li

133
Citations
Time-resolved photoluminescence measurements of InGaN light-emitting diodes

M. Pophristic;F. H. Long;C. Tran;I. T. Ferguson

121
Citations
Composition, structure, and mechanical properties of hemp fiber reinforced composite with recycled high-density polyethylene matrix

Na Lu;Robert H Swan;Ian Ferguson

115
Citations
HIGH SPATIAL RESOLUTION THERMAL CONDUCTIVITY OF LATERAL EPITAXIAL OVERGROWN GAN/SAPPHIRE (0001) USING A SCANNING THERMAL MICROSCOPE

V. M. Asnin;Fred H. Pollak;J. Ramer;M. Schurman

108
Citations
Review—The Current and Emerging Applications of the III-Nitrides

Chuanle Zhou;Amirhossein Ghods;Vishal G. Saravade;Paresh V. Patel

108
Citations
Electrical and magneto-optical of MBE InAs on GaAs

P D Wang;S N Holmes;Tan Le;R A Stradling

104
Citations
Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

Zhiqiang Liu;Tongbo Wei;Enqing Guo;Xiaoyan Yi

98
Citations
Materials Science Forum

I. Ferguson;C. Liang;A. Tran;R. F. Karlicek

49
Citations