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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 51 9878 9539 2381 2210 462 9717

Ian T. Ferguson publications per year

The chart shows the history of publications by Ian T. Ferguson between 1974 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Ian T. Ferguson published across 52 years, from 1974 to 2025, averaging 11.2 papers a year. Output peaked at 42 publications in 2006. 12 of the 580 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 1974 to 2025. Vertical axis: number of publications, 0 to 42. Peak 42 publications in 2006. 1974: 1 publication 1975: 2 publications 1976: 0 publications 1977: 0 publications 1978: 1 publication 1979: 0 publications 1980: 0 publications 1981: 0 publications 1982: 1 publication 1983: 0 publications 1984: 2 publications 1985: 1 publication 1986: 2 publications 1987: 0 publications 1988: 0 publications 1989: 2 publications 1990: 0 publications 1991: 8 publications 1992: 8 publications 1993: 5 publications 1994: 6 publications 1995: 5 publications 1996: 5 publications 1997: 9 publications 1998: 18 publications 1999: 17 publications 2000: 27 publications 2001: 19 publications 2002: 14 publications 2003: 10 publications 2004: 12 publications 2005: 33 publications 2006: 42 publications 2007: 37 publications 2008: 30 publications 2009: 39 publications 2010: 23 publications 2011: 18 publications 2012: 23 publications 2013: 12 publications 2014: 14 publications 2015: 11 publications 2016: 20 publications 2017: 20 publications 2018: 11 publications 2019: 20 publications 2020: 9 publications 2021: 13 publications 2022: 8 publications 2023: 10 publications 2024: 7 publications 2025: 5 publications
1974 2025

580 publications in total across all disciplines

View publications per year as a table
Ian T. Ferguson: publications per year, 1974 to 2025
Year Publications
1974 1
1975 2
1976 0
1977 0
1978 1
1979 0
1980 0
1981 0
1982 1
1983 0
1984 2
1985 1
1986 2
1987 0
1988 0
1989 2
1990 0
1991 8
1992 8
1993 5
1994 6
1995 5
1996 5
1997 9
1998 18
1999 17
2000 27
2001 19
2002 14
2003 10
2004 12
2005 33
2006 42
2007 37
2008 30
2009 39
2010 23
2011 18
2012 23
2013 12
2014 14
2015 11
2016 20
2017 20
2018 11
2019 20
2020 9
2021 13
2022 8
2023 10
2024 7
2025 5
Total 580
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Ian T. Ferguson publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Ian T. Ferguson sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 450–469 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 462 publications — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216 462
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Ian T. Ferguson D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Ian T. Ferguson sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 50–51 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 51 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657 51
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Research.com Recognitions

  • 2009 - SPIE Fellow

Overview

Ian T. Ferguson is affiliated with Kennesaw State University in the United States. Their research primarily focuses on materials science, engineering, and physics and astronomy with a significant portion of work dedicated to materials chemistry, electrical and electronic engineering, and condensed matter physics.

The main topics covered in Ferguson's research include:

  • ZnO doping and properties
  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Metal and thin film mechanics
  • Gas sensing nanomaterials and sensors
  • Semiconductor materials and devices
  • Acoustic wave resonator technologies

Frequent publication venues for Ferguson's work are:

  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Materials
  • Semiconductor Science and Technology
  • Nanomaterials
  • Journal of Alloys and Compounds

Some of the recent papers published by Ferguson include:

  • Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H-SiC, 2020, Journal of Alloys and Compounds
  • Structural and optical properties of (Zn,Mn)O thin films prepared by atomic layer deposition, 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Advances in growth, doping, and devices and applications of zinc oxide, 2024, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Optical and surface properties of 3C-SiC thin epitaxial films grown at different temperatures on 4H-SiC substrates, 2021, Superlattices and Microstructures
  • Effects of annealing temperature, thickness and substrates on optical properties of m-plane ZnO films studied by photoluminescence and temperature dependent ellipsometry, 2020, Journal of Alloys and Compounds

Frequent co-authors collaborating with Ferguson include:

  • Zhe Chuan Feng
  • Lingyu Wan
  • Benjamin Klein
  • Jeffrey Yiin
  • Vishal Saravade

Ferguson was awarded the title of SPIE Fellow in 2009.

Best Publications

  • Design and characterization of GaN∕InGaN solar cells

    Omkar Jani;Ian Ferguson;Christiana Honsberg;Sarah Kurtz

  • Effects of Blue Light on the Circadian System and Eye Physiology

    Gianluca Tosini;Ian Ferguson;Kazuo Tsubota

  • Very high efficiency solar cell modules

    Allen Barnett;Douglas Kirkpatrick;Christiana Honsberg;Duncan Moore

  • High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

    P. Kung;A. Saxler;X. Zhang;D. Walker

  • Spatial characterization of doped SiC wafers by Raman spectroscopy

    J. C. Burton;L. Sun;M. Pophristic;S. J. Lukacs

  • Single-crystal aluminum nitride nanomechanical resonators

    A. N. Cleland;M. Pophristic;I. Ferguson

  • First- and second-order Raman scattering from semi-insulating 4H-SiC

    J. C. Burton;L. Sun;F. H. Long;Z. C. Feng

  • Magnetic properties of bulk Zn1-xMnxO and Zn1-xCoxO single crystals

    M. H. Kane;K. Shalini;C. J. Summers;R. Varatharajan

  • Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy

    D. I. Florescu;V. M. Asnin;Fred H. Pollak;A. M. Jones

  • Metal oxides for thermoelectric power generation and beyond

    Yining Feng;Xiaodong Jiang;Ehsan Ghafari;Bahadir Kucukgok

  • Effect of surface treatment on thermal stability of the hemp-PLA composites: Correlation of activation energy with thermal degradation

    Shubhashini Oza;Haibin Ning;Ian Ferguson;Na Lu

  • Zinc oxide as an active n-layer and antireflection coating for silicon based heterojunction solar cell

    Babar Hussain;Abasifreke Ebong;Ian Ferguson;Ian Ferguson

  • III-nitrides for energy production: photovoltaic and thermoelectric applications

    Na Lu;Ian Ferguson

  • A method and apparatus for performing wavelength-conversion using phosphors withlight emitting diodes

    Garbuzov Dmitri Z;Connolly John C;Karlicek Robert F;Ferguson Ian T

  • Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN

    M. Wraback;H. Shen;J. C. Carrano;T. Li

  • Time-resolved photoluminescence measurements of InGaN light-emitting diodes

    M. Pophristic;F. H. Long;C. Tran;I. T. Ferguson

  • Composition, structure, and mechanical properties of hemp fiber reinforced composite with recycled high-density polyethylene matrix

    Na Lu;Robert H Swan;Ian Ferguson

  • HIGH SPATIAL RESOLUTION THERMAL CONDUCTIVITY OF LATERAL EPITAXIAL OVERGROWN GAN/SAPPHIRE (0001) USING A SCANNING THERMAL MICROSCOPE

    V. M. Asnin;Fred H. Pollak;J. Ramer;M. Schurman

  • Review—The Current and Emerging Applications of the III-Nitrides

    Chuanle Zhou;Amirhossein Ghods;Vishal G. Saravade;Paresh V. Patel

  • Electrical and magneto-optical of MBE InAs on GaAs

    P D Wang;S N Holmes;Tan Le;R A Stradling

  • Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

    Zhiqiang Liu;Tongbo Wei;Enqing Guo;Xiaoyan Yi

  • Materials Science Forum

    I. Ferguson;C. Liang;A. Tran;R. F. Karlicek

Frequent Co-Authors

Christopher J. Summers
Christopher J. Summers Georgia Institute of Technology
Axel Hoffmann
Axel Hoffmann University of Illinois at Urbana-Champaign
Robert L. Opila
Robert L. Opila University of Delaware
Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
Tae Yeon Seong
Tae Yeon Seong Korea University
H. C. Liu
H. C. Liu Shanghai Jiao Tong University
Jinmin Li
Jinmin Li Chinese Academy of Sciences
Junxi Wang
Junxi Wang Chinese Academy of Sciences
Manijeh Razeghi
Manijeh Razeghi Northwestern University
Jer-Ren Yang
Jer-Ren Yang National Taiwan University

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