2009 - SPIE Fellow
His primary areas of study are Optoelectronics, Wide-bandgap semiconductor, Light-emitting diode, Metalorganic vapour phase epitaxy and Photoluminescence. His studies deal with areas such as Layer and Optics as well as Optoelectronics. His research in Wide-bandgap semiconductor intersects with topics in Etching and Epitaxy.
His Light-emitting diode study incorporates themes from Wavelength, Substrate and Blue light. As a part of the same scientific family, Ian T. Ferguson mostly works in the field of Metalorganic vapour phase epitaxy, focusing on Chemical vapor deposition and, on occasion, Thin film, Convection, Silicon and Solar energy. His biological study spans a wide range of topics, including X-ray crystallography, Photovoltaic system and Quantum efficiency.
The scientist’s investigation covers issues in Optoelectronics, Metalorganic vapour phase epitaxy, Chemical vapor deposition, Analytical chemistry and Photoluminescence. His Optoelectronics study also includes fields such as
His study on Chemical vapor deposition is mostly dedicated to connecting different topics, such as Indium. His Analytical chemistry study combines topics in areas such as Crystallography, Annealing, Ferromagnetism and X-ray crystallography. His work deals with themes such as Quantum well and Quantum dot, which intersect with Photoluminescence.
Ian T. Ferguson mostly deals with Optoelectronics, Band gap, Thin film, Doping and Chemical vapor deposition. His Optoelectronics research integrates issues from Layer, Passivation and Ionization. Ian T. Ferguson combines subjects such as Substrate, Absorption edge and X-ray photoelectron spectroscopy with his study of Thin film.
The various areas that Ian T. Ferguson examines in his Doping study include Seebeck coefficient, Gallium nitride, Semiconductor and Engineering physics. His study in Chemical vapor deposition is interdisciplinary in nature, drawing from both Metalorganic vapour phase epitaxy and Photoluminescence, Analytical chemistry. He focuses mostly in the field of Schottky barrier, narrowing it down to topics relating to Photovoltaic system and, in certain cases, Wide-bandgap semiconductor.
Ian T. Ferguson spends much of his time researching Optoelectronics, Engineering physics, Doping, Seebeck coefficient and Band gap. His studies deal with areas such as Layer and Gallium nitride as well as Optoelectronics. His Engineering physics research includes themes of Power factor, Sputtering, Direct and indirect band gaps, Wide-bandgap semiconductor and Nitride.
His Seebeck coefficient research is multidisciplinary, incorporating perspectives in Thermoelectric materials, Dopant, Transistor, Photovoltaic system and Thermal stability. His biological study spans a wide range of topics, including Sapphire, Photoluminescence, Analytical chemistry and Refractive index. The Analytical chemistry study combines topics in areas such as Metalorganic vapour phase epitaxy, Chemical vapor deposition, Scanning electron microscope, Dielectric and Quartz.
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Design and characterization of GaN∕InGaN solar cells
Omkar Jani;Ian Ferguson;Christiana Honsberg;Sarah Kurtz.
Applied Physics Letters (2007)
Effects of Blue Light on the Circadian System and Eye Physiology
Gianluca Tosini;Ian Ferguson;Kazuo Tsubota.
Molecular Vision (2016)
Very high efficiency solar cell modules
Allen Barnett;Douglas Kirkpatrick;Christiana Honsberg;Duncan Moore.
Progress in Photovoltaics (2009)
High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates
P. Kung;A. Saxler;X. Zhang;D. Walker.
Applied Physics Letters (1995)
Single-crystal aluminum nitride nanomechanical resonators
A. N. Cleland;M. Pophristic;I. Ferguson.
Applied Physics Letters (2001)
Sustainable Forest Management
Ian S. Ferguson.
Spatial characterization of doped SiC wafers by Raman spectroscopy
J. C. Burton;L. Sun;M. Pophristic;S. J. Lukacs.
Journal of Applied Physics (1998)
Decision support system for the sustainable forest management
Vivek K. Varma;Ian Ferguson;Ian Wild.
decision support systems (2000)
First- and second-order Raman scattering from semi-insulating 4H-SiC
J. C. Burton;L. Sun;F. H. Long;Z. C. Feng.
Physical Review B (1999)
Magnetic properties of bulk Zn1-xMnxO and Zn1-xCoxO single crystals
M. H. Kane;K. Shalini;C. J. Summers;R. Varatharajan.
Journal of Applied Physics (2005)
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