World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
61
Citations
11122
World Ranking
1575
National Ranking
16

Materials Science

D-Index
63
Citations
11539
World Ranking
6300
National Ranking
71

Overview

Jinn-Kong Sheu is affiliated with National Cheng Kung University in Taiwan and has an extensive publication record in the fields of Materials Science and Engineering. Their research spans various subfields including Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, and Biomedical Engineering.

The scientist's work focuses on several main topics, notably:

  • Ga2O3 and related materials
  • Advanced Photocatalysis Techniques
  • ZnO doping and properties
  • GaN-based semiconductor devices and materials
  • Electrochemical sensors and biosensors
  • Electrochemical Analysis and Applications
  • Advanced biosensing and bioanalysis techniques

Frequent publication venues for Jinn-Kong Sheu include:

  • The Journal of Physical Chemistry C (5 publications)
  • ACS Applied Energy Materials (4 publications)
  • ACS Applied Nano Materials (3 publications)
  • Advanced Science (2 publications)
  • Applied Physics Letters (2 publications)

They have collaborated extensively with several researchers, with frequent coauthors including:

  • Sakthivel Kogularasu (18 coauthored papers)
  • Ming-Lun Lee (13 coauthored papers)
  • Wei-Chih Lai (8 coauthored papers)
  • Balasubramanian Sriram (7 coauthored papers)
  • Chi-Kuang Sun (7 coauthored papers)

Recent papers highlight specific research contributions such as:

  • "Deep Eutectic Solvent-Mediated Synthesis of Spinel Zinc Chromite Nanoparticles: A Simple Label-Free Electrochemical Sensor for Dopamine and Ascorbic Acid" (2023, ACS Applied Nano Materials)
  • "High-Responsivity Solar-Blind Photodetectors Formed by Ga2O3/p-GaN Bipolar Heterojunctions" (2022, ACS Photonics)
  • "Fabrication of Praseodymium Vanadate Nanoparticles on Disposable Strip for Rapid and Real-Time Amperometric Sensing of Arsenic Drug Roxarsone" (2022, Inorganic Chemistry)
  • "Sea-Urchin-Like Bi2S3 Microstructures Decorated with Graphitic Carbon Nitride Nanosheets for Use in Food Preservation" (2022, ACS Applied Nano Materials)
  • "Unlocking Catalytic Potential: Exploring the Impact of Thermal Treatment on Enhanced Electrocatalysis of Nanomaterials" (2023, Angewandte Chemie)

Best Publications

  • White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

    J.K. Sheu;S.J. Chang;C.H. Kuo;Y.K. Su

  • High-transparency Ni/Au ohmic contact to p-type GaN

    J. K. Sheu;Y. K. Su;G. C. Chi;P. L. Koh

  • 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

    S.J. Chang;C.H. Kuo;Y.K. Su;L.W. Wu

  • Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

    J. K. Sheu;Yan-Kuin Su;G. C. Chi;M. J. Jou

  • Group III-V element-based LED having flip-chip structure and ESD protection capacity

    Jinn-Kong Sheu

  • GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

    C.H. Chen;S.J. Chang;Y.K. Su;G.C. Chi

  • The doping process and dopant characteristics of GaN

    Jinn-Kong Sheu;G. C. Chi

  • Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer

    J.K. Sheu;J.M. Tsai;S.C. Shei;W.C. Lai

  • Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

    L.W. Wu;S.J. Chang;T.C. Wen;Y.K. Su

  • n-UV+Blue/Green/Red White Light Emitting Diode Lamps

    Cheng-Huang Kuo;Jinn Kong Sheu;Shoou Jinn Chang;Yan Kuin Su

  • InGaN-AlInGaN multiquantum-well LEDs

    Wei-Chih Lai;Shoou-Jinn Chang;M. Yokoyam;Jinn-Kong Sheu

  • GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes

    Y.K. Su;S.J. Chang;C.H. Chen;J.F. Chen

  • The effect of thermal annealing on the Ni/Au contact of p-type GaN

    J. K. Sheu;Y. K. Su;G. C. Chi;W. C. Chen

  • Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

    S.J. Chang;C.H. Chen;Y.K. Su;J.K. Sheu

  • White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

    J.K. Sheu;C.J. Pan;G.C. Chi;C.H. Kuo

  • Nonalloyed Cr/Au-based Ohmic contacts to n-GaN

    Ming Lun Lee;Jinn Kong Sheu;C. C. Hu

  • Nitride-based cascade near white light-emitting diodes

    C.H. Chen;S.J. Chang;Y.K. Su;J.K. Sheu

  • Nitride-based LEDs with 800/spl deg/C grown p-AlInGaN-GaN double-cap layers

    S.J. Chang;L.W. Wu;Y.K. Su;Y.P. Hsu

  • Light-emitting diode structure with electrostatic discharge protection

    Shih-Chang Shei;Jinn-Kong Sheu

  • Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer

    Chun-Ju Tun;Jinn-Kong Sheu;Bao-Jen Pong;Min-Lum Lee

  • Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography

    Shoou-Jinn Chang;C. F. Shen;W. S. Chen;C. T. Kuo

Frequent Co-Authors

Wei-Chih Lai
Wei-Chih Lai National Cheng Kung University
Shoou-Jinn Chang
Shoou-Jinn Chang National Cheng Kung University
Yan-Kuin Su
Yan-Kuin Su National Cheng Kung University
Gou-Chung Chi
Gou-Chung Chi National Yang Ming Chiao Tung University
Jin-Wei Shi
Jin-Wei Shi National Central University
Chi-Kuang Sun
Chi-Kuang Sun National Taiwan University
Ten-Chin Wen
Ten-Chin Wen National Cheng Kung University
Hao-Chung Kuo
Hao-Chung Kuo National Yang Ming Chiao Tung University
E. F. Schubert
E. F. Schubert Rensselaer Polytechnic Institute
John E. Bowers
John E. Bowers University of California, Santa Barbara

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