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Best Scientists - Electronics and Electrical Engineering
Jinn-Kong Sheu

Jinn-Kong Sheu

National Cheng Kung University
Taiwan

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name Citations Publications World Ranking National Ranking

Electronics and Electrical Engineering D-index 57 Citations 9,321 363 World Ranking 1215 National Ranking 18

Materials Science D-index 58 Citations 9,655 386 World Ranking 4937 National Ranking 64

Overview

What are the main themes of his work throughout his whole career to date

Jinn-Kong Sheu has begun a study into Wavelength, looking into Lasing threshold and Distributed Bragg reflector. He incorporates Distributed Bragg reflector and Laser in his research. Jinn-Kong Sheu performs integrative Laser and Lasing threshold research in his work. His research on Nanotechnology often connects related topics like Contact resistance. Contact resistance connects with themes related to Nanotechnology in his study. His Optoelectronics study frequently draws connections to adjacent fields such as Near ultraviolet. Indium tin oxide is often connected to Layer (electronics) in his work. Layer (electronics) is closely attributed to Indium tin oxide in his work. With his scientific publications, his incorporates both Diode and Light-emitting diode.

Jinn-Kong Sheu most often published in these fields:

Nanotechnology (66.67%)
Optoelectronics (66.67%)
Indium tin oxide (33.33%)

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

J.K. Sheu;S.J. Chang;C.H. Kuo;Y.K. Su.
IEEE Photonics Technology Letters (2003)

777 Citations

High-transparency Ni/Au ohmic contact to p-type GaN

J. K. Sheu;Y. K. Su;G. C. Chi;P. L. Koh.
Applied Physics Letters (1999)

287 Citations

400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

S.J. Chang;C.H. Kuo;Y.K. Su;L.W. Wu.
IEEE Journal of Selected Topics in Quantum Electronics (2002)

251 Citations

Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

J. K. Sheu;Yan-Kuin Su;G. C. Chi;M. J. Jou.
Applied Physics Letters (1998)

224 Citations

Group III-V element-based LED having flip-chip structure and ESD protection capacity

Jinn-Kong Sheu.
(2002)

202 Citations

GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

C.H. Chen;S.J. Chang;Y.K. Su;G.C. Chi.
IEEE Photonics Technology Letters (2001)

185 Citations

Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer

J.K. Sheu;J.M. Tsai;S.C. Shei;W.C. Lai.
IEEE Electron Device Letters (2001)

161 Citations

The doping process and dopant characteristics of GaN

Jinn-Kong Sheu;G. C. Chi.
Journal of Physics: Condensed Matter (2002)

156 Citations

Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

L.W. Wu;S.J. Chang;T.C. Wen;Y.K. Su.
IEEE Journal of Quantum Electronics (2002)

150 Citations

Light emitting diode

Sheu Jinn-Kong;Kuo Daniel;Hsu Samuel.
(2003)

142 Citations

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Frequent Co-Authors

External Links

Personal Website for Jinn-Kong Sheu