World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
61
Citations
11122
World Ranking
1575
National Ranking
16

Materials Science

D-Index
63
Citations
11539
World Ranking
6298
National Ranking
72

Jinn-Kong Sheu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jinn-Kong Sheu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 411 publications — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jinn-Kong Sheu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jinn-Kong Sheu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 61 D-Index — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Jinn-Kong Sheu is affiliated with National Cheng Kung University in Taiwan and has an extensive publication record in the fields of Materials Science and Engineering. Their research spans various subfields including Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, and Biomedical Engineering.

The scientist's work focuses on several main topics, notably:

  • Ga2O3 and related materials
  • Advanced Photocatalysis Techniques
  • ZnO doping and properties
  • GaN-based semiconductor devices and materials
  • Electrochemical sensors and biosensors
  • Electrochemical Analysis and Applications
  • Advanced biosensing and bioanalysis techniques

Frequent publication venues for Jinn-Kong Sheu include:

  • The Journal of Physical Chemistry C (5 publications)
  • ACS Applied Energy Materials (4 publications)
  • ACS Applied Nano Materials (3 publications)
  • Advanced Science (2 publications)
  • Applied Physics Letters (2 publications)

They have collaborated extensively with several researchers, with frequent coauthors including:

  • Sakthivel Kogularasu (18 coauthored papers)
  • Ming-Lun Lee (13 coauthored papers)
  • Wei-Chih Lai (8 coauthored papers)
  • Balasubramanian Sriram (7 coauthored papers)
  • Chi-Kuang Sun (7 coauthored papers)

Recent papers highlight specific research contributions such as:

  • "Deep Eutectic Solvent-Mediated Synthesis of Spinel Zinc Chromite Nanoparticles: A Simple Label-Free Electrochemical Sensor for Dopamine and Ascorbic Acid" (2023, ACS Applied Nano Materials)
  • "High-Responsivity Solar-Blind Photodetectors Formed by Ga2O3/p-GaN Bipolar Heterojunctions" (2022, ACS Photonics)
  • "Fabrication of Praseodymium Vanadate Nanoparticles on Disposable Strip for Rapid and Real-Time Amperometric Sensing of Arsenic Drug Roxarsone" (2022, Inorganic Chemistry)
  • "Sea-Urchin-Like Bi2S3 Microstructures Decorated with Graphitic Carbon Nitride Nanosheets for Use in Food Preservation" (2022, ACS Applied Nano Materials)
  • "Unlocking Catalytic Potential: Exploring the Impact of Thermal Treatment on Enhanced Electrocatalysis of Nanomaterials" (2023, Angewandte Chemie)

Best Publications

  • White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

    J.K. Sheu;S.J. Chang;C.H. Kuo;Y.K. Su

  • High-transparency Ni/Au ohmic contact to p-type GaN

    J. K. Sheu;Y. K. Su;G. C. Chi;P. L. Koh

  • 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

    S.J. Chang;C.H. Kuo;Y.K. Su;L.W. Wu

  • Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

    J. K. Sheu;Yan-Kuin Su;G. C. Chi;M. J. Jou

  • Group III-V element-based LED having flip-chip structure and ESD protection capacity

    Jinn-Kong Sheu

  • GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

    C.H. Chen;S.J. Chang;Y.K. Su;G.C. Chi

  • The doping process and dopant characteristics of GaN

    Jinn-Kong Sheu;G. C. Chi

  • Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer

    J.K. Sheu;J.M. Tsai;S.C. Shei;W.C. Lai

  • Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

    L.W. Wu;S.J. Chang;T.C. Wen;Y.K. Su

  • n-UV+Blue/Green/Red White Light Emitting Diode Lamps

    Cheng-Huang Kuo;Jinn Kong Sheu;Shoou Jinn Chang;Yan Kuin Su

  • InGaN-AlInGaN multiquantum-well LEDs

    Wei-Chih Lai;Shoou-Jinn Chang;M. Yokoyam;Jinn-Kong Sheu

  • GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes

    Y.K. Su;S.J. Chang;C.H. Chen;J.F. Chen

  • The effect of thermal annealing on the Ni/Au contact of p-type GaN

    J. K. Sheu;Y. K. Su;G. C. Chi;W. C. Chen

  • Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

    S.J. Chang;C.H. Chen;Y.K. Su;J.K. Sheu

  • White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

    J.K. Sheu;C.J. Pan;G.C. Chi;C.H. Kuo

  • Nonalloyed Cr/Au-based Ohmic contacts to n-GaN

    Ming Lun Lee;Jinn Kong Sheu;C. C. Hu

  • Nitride-based cascade near white light-emitting diodes

    C.H. Chen;S.J. Chang;Y.K. Su;J.K. Sheu

  • Nitride-based LEDs with 800/spl deg/C grown p-AlInGaN-GaN double-cap layers

    S.J. Chang;L.W. Wu;Y.K. Su;Y.P. Hsu

  • Light-emitting diode structure with electrostatic discharge protection

    Shih-Chang Shei;Jinn-Kong Sheu

  • Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer

    Chun-Ju Tun;Jinn-Kong Sheu;Bao-Jen Pong;Min-Lum Lee

  • Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography

    Shoou-Jinn Chang;C. F. Shen;W. S. Chen;C. T. Kuo

Frequent Co-Authors

Wei-Chih Lai
Wei-Chih Lai National Cheng Kung University
Shoou-Jinn Chang
Shoou-Jinn Chang National Cheng Kung University
Yan-Kuin Su
Yan-Kuin Su National Cheng Kung University
Gou-Chung Chi
Gou-Chung Chi National Yang Ming Chiao Tung University
Jin-Wei Shi
Jin-Wei Shi National Central University
Chi-Kuang Sun
Chi-Kuang Sun National Taiwan University
Ten-Chin Wen
Ten-Chin Wen National Cheng Kung University
Hao-Chung Kuo
Hao-Chung Kuo National Yang Ming Chiao Tung University
E. F. Schubert
E. F. Schubert Rensselaer Polytechnic Institute
John E. Bowers
John E. Bowers University of California, Santa Barbara

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