Jinn-Kong Sheu has begun a study into Wavelength, looking into Lasing threshold and Distributed Bragg reflector. He incorporates Distributed Bragg reflector and Laser in his research. Jinn-Kong Sheu performs integrative Laser and Lasing threshold research in his work. His research on Nanotechnology often connects related topics like Contact resistance. Contact resistance connects with themes related to Nanotechnology in his study. His Optoelectronics study frequently draws connections to adjacent fields such as Near ultraviolet. Indium tin oxide is often connected to Layer (electronics) in his work. Layer (electronics) is closely attributed to Indium tin oxide in his work. With his scientific publications, his incorporates both Diode and Light-emitting diode.
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White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors
J.K. Sheu;S.J. Chang;C.H. Kuo;Y.K. Su.
IEEE Photonics Technology Letters (2003)
High-transparency Ni/Au ohmic contact to p-type GaN
J. K. Sheu;Y. K. Su;G. C. Chi;P. L. Koh.
Applied Physics Letters (1999)
400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
S.J. Chang;C.H. Kuo;Y.K. Su;L.W. Wu.
IEEE Journal of Selected Topics in Quantum Electronics (2002)
Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN
J. K. Sheu;Yan-Kuin Su;G. C. Chi;M. J. Jou.
Applied Physics Letters (1998)
Group III-V element-based LED having flip-chip structure and ESD protection capacity
GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts
C.H. Chen;S.J. Chang;Y.K. Su;G.C. Chi.
IEEE Photonics Technology Letters (2001)
Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer
J.K. Sheu;J.M. Tsai;S.C. Shei;W.C. Lai.
IEEE Electron Device Letters (2001)
The doping process and dopant characteristics of GaN
Jinn-Kong Sheu;G. C. Chi.
Journal of Physics: Condensed Matter (2002)
Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes
L.W. Wu;S.J. Chang;T.C. Wen;Y.K. Su.
IEEE Journal of Quantum Electronics (2002)
Light emitting diode
Sheu Jinn-Kong;Kuo Daniel;Hsu Samuel.
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