H-Index & Metrics Best Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 55 Citations 8,655 268 World Ranking 843 National Ranking 15
Materials Science D-index 57 Citations 9,314 304 World Ranking 4035 National Ranking 51

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optoelectronics
  • Optics

Optoelectronics, Light-emitting diode, Diode, Wide-bandgap semiconductor and Nitride are his primary areas of study. His study in Optoelectronics is interdisciplinary in nature, drawing from both Layer, Gallium nitride and Epitaxy. His Light-emitting diode study is concerned with the larger field of Optics.

Jinn-Kong Sheu interconnects Electroluminescence, Semiconductor, Photoluminescence, Phosphor and Quantum efficiency in the investigation of issues within Diode. As part of one scientific family, Jinn-Kong Sheu deals mainly with the area of Wide-bandgap semiconductor, narrowing it down to issues related to the Ohmic contact, and often Electron beam physical vapor deposition, Annealing, Contact resistance, Dielectric and Condensed matter physics. His research integrates issues of Voltage, Luminous efficacy, Brightness and Contact layer in his study of Nitride.

His most cited work include:

  • White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors (547 citations)
  • 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes (213 citations)
  • High-transparency Ni/Au ohmic contact to p-type GaN (186 citations)

What are the main themes of his work throughout his whole career to date?

Jinn-Kong Sheu mainly investigates Optoelectronics, Light-emitting diode, Diode, Optics and Gallium nitride. The various areas that he examines in his Optoelectronics study include Layer, Nitride and Epitaxy. In his study, which falls under the umbrella issue of Light-emitting diode, Chemical vapor deposition is strongly linked to Metalorganic vapour phase epitaxy.

His Diode research includes elements of Quantum well, Green-light, Cascade, Voltage and Photoluminescence. His Optics study combines topics in areas such as Thin film and Biasing. The study incorporates disciplines such as Etching and Indium tin oxide in addition to Gallium nitride.

He most often published in these fields:

  • Optoelectronics (84.83%)
  • Light-emitting diode (46.52%)
  • Diode (34.58%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (84.83%)
  • Light-emitting diode (46.52%)
  • Diode (34.58%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Optoelectronics, Light-emitting diode, Diode, Optics and Gallium nitride. His biological study spans a wide range of topics, including Layer, Epitaxy and Laser. His Light-emitting diode research also works with subjects such as

  • Quantum efficiency which connect with Auger effect,
  • Tunnel junction that connect with fields like Spectral width.

His Diode research incorporates themes from Spontaneous emission, Color rendering index, Phosphor, Quantum well and Ultraviolet. His work carried out in the field of Optics brings together such families of science as Amorphous solid and Voltage. His studies in Gallium nitride integrate themes in fields like Optical pumping, Luminous efficacy, Carrier lifetime, Homojunction and Sapphire.

Between 2014 and 2021, his most popular works were:

  • Probing Hydrophilic Interface of Solid/ Liquid-Water by Nanoultrasonics (29 citations)
  • THz acoustic phonon spectroscopy and nanoscopy by using piezoelectric semiconductor heterostructures (27 citations)
  • III-Nitride-Based Cyan Light-Emitting Diodes With GHz Bandwidth for High-Speed Visible Light Communication (26 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Optics
  • Laser

Jinn-Kong Sheu spends much of his time researching Optoelectronics, Light-emitting diode, Diode, Optics and Layer. His Optoelectronics research is multidisciplinary, incorporating perspectives in Epitaxy, Electroluminescence, Photon, Active layer and Laser. His research in Epitaxy focuses on subjects like Transmission electron microscopy, which are connected to Femtosecond.

His work deals with themes such as Luminescence and Gallium nitride, which intersect with Light-emitting diode. His Layer study incorporates themes from Image resolution, Oxide, Ultraviolet and Photonic crystal. His Quantum efficiency research includes themes of Substrate and Color rendering index, Phosphor.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

J.K. Sheu;S.J. Chang;C.H. Kuo;Y.K. Su.
IEEE Photonics Technology Letters (2003)

722 Citations

High-transparency Ni/Au ohmic contact to p-type GaN

J. K. Sheu;Y. K. Su;G. C. Chi;P. L. Koh.
Applied Physics Letters (1999)

270 Citations

400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

S.J. Chang;C.H. Kuo;Y.K. Su;L.W. Wu.
IEEE Journal of Selected Topics in Quantum Electronics (2002)

249 Citations

Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

J. K. Sheu;Yan-Kuin Su;G. C. Chi;M. J. Jou.
Applied Physics Letters (1998)

213 Citations

GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

C.H. Chen;S.J. Chang;Y.K. Su;G.C. Chi.
IEEE Photonics Technology Letters (2001)

176 Citations

Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer

J.K. Sheu;J.M. Tsai;S.C. Shei;W.C. Lai.
IEEE Electron Device Letters (2001)

157 Citations

The doping process and dopant characteristics of GaN

Jinn-Kong Sheu;G. C. Chi.
Journal of Physics: Condensed Matter (2002)

153 Citations

Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

L.W. Wu;S.J. Chang;T.C. Wen;Y.K. Su.
IEEE Journal of Quantum Electronics (2002)

148 Citations

Light emitting diode

Sheu Jinn-Kong;Kuo Daniel;Hsu Samuel.
(2003)

142 Citations

Group III-V element-based LED having ESD protection capacity

Jinn-Kong Sheu.
(2002)

140 Citations

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