World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
40
Citations
6976
World Ranking
7281
National Ranking
74

Gou-Chung Chi publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Gou-Chung Chi sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 272 publications — 70th percentile

70% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Gou-Chung Chi D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Gou-Chung Chi sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 40 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Gou-Chung Chi is affiliated with National Yang Ming Chiao Tung University in Taiwan and conducts research primarily in the field of engineering. Their scholarly contributions span various subfields including mechanical engineering, civil and structural engineering, biomedical engineering, building and construction, and automotive engineering.

The main research topics covered in Gou-Chung Chi's work include:

  • Heat Transfer and Optimization
  • Building Energy and Comfort Optimization
  • Advanced Materials and Mechanics
  • Advanced Sensor and Energy Harvesting Materials
  • Thermal Radiation and Cooling Technologies
  • Dielectric materials and actuators
  • Ultrasonics and Acoustic Wave Propagation

Gou-Chung Chi has published research in a range of scientific venues. The most frequent publication venues include:

  • SSRN Electronic Journal
  • Nature Communications
  • International Journal of Hydrogen Energy
  • Advanced Materials
  • Applied Thermal Engineering

Among the recent papers authored or coauthored by Gou-Chung Chi are:

  • "Hydraulic-driven adaptable morphing active-cooling elastomer with bioinspired bicontinuous phases" (2024, Nature Communications)
  • "A brief review of structural health monitoring based on flexible sensing technology for hydrogen storage tank" (2024, International Journal of Hydrogen Energy)
  • "Volume-Metallization 3D-Printed Polymer Composites" (2024, Advanced Materials)
  • "Liquid metal-based flexible heat sink for adaptive thermal management" (2024, Applied Thermal Engineering)
  • "Cross-Domain Inner-Product Access Control Encryption for Secure EMR Flow in Cloud Edge" (2024, IEEE Transactions on Information Forensics and Security)

The frequent coauthors collaborating with Gou-Chung Chi include:

  • Zhi-Zhu He
  • Dehai Yu
  • Zhonghao Wang
  • Maolin Li
  • Chuanke Liu

Best Publications

  • White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

    J.K. Sheu;S.J. Chang;C.H. Kuo;Y.K. Su

  • High-transparency Ni/Au ohmic contact to p-type GaN

    J. K. Sheu;Y. K. Su;G. C. Chi;P. L. Koh

  • Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

    J. K. Sheu;Yan-Kuin Su;G. C. Chi;M. J. Jou

  • GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

    C.H. Chen;S.J. Chang;Y.K. Su;G.C. Chi

  • Electroluminescence from ZnO nanowire/polymer composite p-n junction

    Chih-Yang Chang;Fu-Chun Tsao;Ching-Jen Pan;Gou-Chung Chi

  • The doping process and dopant characteristics of GaN

    Jinn-Kong Sheu;G. C. Chi

  • Oxygen sensors made by monolayer graphene under room temperature

    C. W. Chen;S. C. Hung;M. D. Yang;C. W. Yeh

  • A bilayer Ti/Ag ohmic contact for highly doped n‐type GaN films

    J. D. Guo;C. I. Lin;M. S. Feng;Fu-Ming Pan

  • GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes

    Y.K. Su;S.J. Chang;C.H. Chen;J.F. Chen

  • The effect of thermal annealing on the Ni/Au contact of p-type GaN

    J. K. Sheu;Y. K. Su;G. C. Chi;W. C. Chen

  • White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

    J.K. Sheu;C.J. Pan;G.C. Chi;C.H. Kuo

  • Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer

    Chun-Ju Tun;Jinn-Kong Sheu;Bao-Jen Pong;Min-Lum Lee

  • GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

    S.J. Chang;M.L. Lee;J.K. Sheu;W.C. Lai

  • High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures

    C.H. Chen;S.J. Chang;Y.K. Su;G.C. Chi

  • Effect of Thermal Annealing on Ga-Doped ZnO Films Prepared by Magnetron Sputtering

    Jinn-Kong Sheu;K. W. Shu;Min-Lum Lee;Chun-Ju Tun

  • Electrical transport properties of single GaN and InN nanowires

    Chih-Yang Chang;Gou-Chung Chi;Wei-Ming Wang;Li-Chyong Chen

  • Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases

    Jinn-Kong Sheu;Y. K. Su;G. C. Chi;M. J. Jou

  • Transport properties of InN nanowires

    Chih-Yang Chang;Gou-Chung Chi;Wei-Ming Wang;Li-Chyong Chen

  • The doping of GaN with Mg diffusion

    C.J. Pan;G.C. Chi

  • Structural defects and microstrain in GaN induced by Mg ion implantation

    B. J. Pong;C. J. Pan;Y. C. Teng;G. C. Chi

  • High brightness green light emitting diodes with charge asymmetric resonance tunneling structure

    C.H. Chen;Y.K. Su;S.J. Chang;G.C. Chi

  • Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al/sub 0.15/Ga/sub 0.85/N/GaN superlattice

    J.K. Sheu;G.C. Chi;M.J. Jou

  • InGaN/GaN light emitting diodes activated in O/sub 2/ ambient

    C.H. Kuo;S.J. Chang;Y.K. Su;J.F. Chen

  • Electrical and optical changes in the near surface of reactively ion etched n-GaN

    J.Y Chen;C.J Pan;G.C Chi

  • Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching

    Chin Hsiang Chen;Shoou Jinn Chang;Yan Kuin Su;Gou Chung Chi

Frequent Co-Authors

Jinn-Kong Sheu
Jinn-Kong Sheu National Cheng Kung University
Fan Ren
Fan Ren University of Florida
Yan-Kuin Su
Yan-Kuin Su National Cheng Kung University
Stephen J. Pearton
Stephen J. Pearton University of Florida
Shoou-Jinn Chang
Shoou-Jinn Chang National Cheng Kung University
Wei-Chih Lai
Wei-Chih Lai National Cheng Kung University
David P. Norton
David P. Norton University of Florida
Jen-Inn Chyi
Jen-Inn Chyi National Central University
Li-Chyong Chen
Li-Chyong Chen National Taiwan University
Kuei-Hsien Chen
Kuei-Hsien Chen Academia Sinica

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