2026 Gou-Chung Chi: Engineering and Technology Researcher – H-Index, Publications & Awards

D-Index & Metrics

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Engineering and Technology	40	7279	7025	74	73	272	6976

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Engineering and Technology

7279

7025

272

6976

Engineering and Technology

D-Index

Citations

6976

World Ranking

7279

National Ranking

Overview

Gou-Chung Chi is affiliated with National Yang Ming Chiao Tung University in Taiwan and conducts research primarily in the field of engineering. Their scholarly contributions span various subfields including mechanical engineering, civil and structural engineering, biomedical engineering, building and construction, and automotive engineering.

The main research topics covered in Gou-Chung Chi's work include:

Heat Transfer and Optimization
Building Energy and Comfort Optimization
Advanced Materials and Mechanics
Advanced Sensor and Energy Harvesting Materials
Thermal Radiation and Cooling Technologies
Dielectric materials and actuators
Ultrasonics and Acoustic Wave Propagation

Gou-Chung Chi has published research in a range of scientific venues. The most frequent publication venues include:

SSRN Electronic Journal
Nature Communications
International Journal of Hydrogen Energy
Advanced Materials
Applied Thermal Engineering

Among the recent papers authored or coauthored by Gou-Chung Chi are:

"Hydraulic-driven adaptable morphing active-cooling elastomer with bioinspired bicontinuous phases" (2024, Nature Communications)
"A brief review of structural health monitoring based on flexible sensing technology for hydrogen storage tank" (2024, International Journal of Hydrogen Energy)
"Volume-Metallization 3D-Printed Polymer Composites" (2024, Advanced Materials)
"Liquid metal-based flexible heat sink for adaptive thermal management" (2024, Applied Thermal Engineering)
"Cross-Domain Inner-Product Access Control Encryption for Secure EMR Flow in Cloud Edge" (2024, IEEE Transactions on Information Forensics and Security)

The frequent coauthors collaborating with Gou-Chung Chi include:

Zhi-Zhu He
Dehai Yu
Zhonghao Wang
Maolin Li
Chuanke Liu

Best Publications

White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

J.K. Sheu;S.J. Chang;C.H. Kuo;Y.K. Su

826
Citations
High-transparency Ni/Au ohmic contact to p-type GaN

J. K. Sheu;Y. K. Su;G. C. Chi;P. L. Koh

300
Citations
Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

J. K. Sheu;Yan-Kuin Su;G. C. Chi;M. J. Jou

226
Citations
GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

C.H. Chen;S.J. Chang;Y.K. Su;G.C. Chi

196
Citations
Electroluminescence from ZnO nanowire/polymer composite p-n junction

Chih-Yang Chang;Fu-Chun Tsao;Ching-Jen Pan;Gou-Chung Chi

194
Citations
The doping process and dopant characteristics of GaN

Jinn-Kong Sheu;G. C. Chi

173
Citations
Oxygen sensors made by monolayer graphene under room temperature

C. W. Chen;S. C. Hung;M. D. Yang;C. W. Yeh

153
Citations
A bilayer Ti/Ag ohmic contact for highly doped n‐type GaN films

J. D. Guo;C. I. Lin;M. S. Feng;Fu-Ming Pan

135
Citations
GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes

Y.K. Su;S.J. Chang;C.H. Chen;J.F. Chen

134
Citations
The effect of thermal annealing on the Ni/Au contact of p-type GaN

J. K. Sheu;Y. K. Su;G. C. Chi;W. C. Chen

134
Citations
White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

J.K. Sheu;C.J. Pan;G.C. Chi;C.H. Kuo

126
Citations
Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer

Chun-Ju Tun;Jinn-Kong Sheu;Bao-Jen Pong;Min-Lum Lee

115
Citations
GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

S.J. Chang;M.L. Lee;J.K. Sheu;W.C. Lai

107
Citations
High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures

C.H. Chen;S.J. Chang;Y.K. Su;G.C. Chi

93
Citations
Effect of Thermal Annealing on Ga-Doped ZnO Films Prepared by Magnetron Sputtering

Jinn-Kong Sheu;K. W. Shu;Min-Lum Lee;Chun-Ju Tun

92
Citations
Electrical transport properties of single GaN and InN nanowires

Chih-Yang Chang;Gou-Chung Chi;Wei-Ming Wang;Li-Chyong Chen

90
Citations
Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases

Jinn-Kong Sheu;Y. K. Su;G. C. Chi;M. J. Jou

90
Citations
Transport properties of InN nanowires

Chih-Yang Chang;Gou-Chung Chi;Wei-Ming Wang;Li-Chyong Chen

85
Citations
The doping of GaN with Mg diffusion

C.J. Pan;G.C. Chi

81
Citations
Structural defects and microstrain in GaN induced by Mg ion implantation

B. J. Pong;C. J. Pan;Y. C. Teng;G. C. Chi

80
Citations
High brightness green light emitting diodes with charge asymmetric resonance tunneling structure

C.H. Chen;Y.K. Su;S.J. Chang;G.C. Chi

80
Citations
Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al/sub 0.15/Ga/sub 0.85/N/GaN superlattice

J.K. Sheu;G.C. Chi;M.J. Jou

72
Citations
InGaN/GaN light emitting diodes activated in O/sub 2/ ambient

C.H. Kuo;S.J. Chang;Y.K. Su;J.F. Chen

71
Citations
Electrical and optical changes in the near surface of reactively ion etched n-GaN

J.Y Chen;C.J Pan;G.C Chi

65
Citations
Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching

Chin Hsiang Chen;Shoou Jinn Chang;Yan Kuin Su;Gou Chung Chi

63
Citations