2011 - IEEE Fellow For contributions to III-V compound semiconductor optoelectronic devices
2011 - SPIE Fellow
His primary areas of investigation include Optoelectronics, Photoluminescence, Condensed matter physics, Quantum well and Quantum dot. His Optoelectronics and Wide-bandgap semiconductor, Heterojunction, Wavelength, Quantum efficiency and Gallium arsenide investigations all form part of his Optoelectronics research activities. His Photoluminescence research includes themes of Annealing, Crystallographic defect, Stark effect, Mineralogy and Infrared spectroscopy.
His studies deal with areas such as Spectral line and Photocurrent as well as Condensed matter physics. Jen-Inn Chyi interconnects Indium, Activation energy, Luminescence, Spectroscopy and Molecular physics in the investigation of issues within Quantum well. His Quantum dot study combines topics from a wide range of disciplines, such as Blueshift, Intermediate state, Redistribution and Photon.
The scientist’s investigation covers issues in Optoelectronics, Heterojunction, Gallium arsenide, Optics and Quantum well. His study in Optoelectronics is interdisciplinary in nature, drawing from both Layer, Gallium nitride and Molecular beam epitaxy. His biological study spans a wide range of topics, including Electron mobility and Analytical chemistry.
His study looks at the relationship between Heterojunction and topics such as Bipolar junction transistor, which overlap with Common emitter. The concepts of his Gallium arsenide study are interwoven with issues in Current density, Quantum efficiency and Laser, Semiconductor laser theory. The study incorporates disciplines such as Indium and Condensed matter physics in addition to Quantum well.
Jen-Inn Chyi mainly focuses on Optoelectronics, Transistor, High-electron-mobility transistor, Layer and Substrate. Jen-Inn Chyi mostly deals with Heterojunction in his studies of Optoelectronics. The various areas that Jen-Inn Chyi examines in his Transistor study include Stress, Electron, Sensitivity and Current.
His research integrates issues of Ohmic contact, Annealing, Microwave and Resolution in his study of High-electron-mobility transistor. His work deals with themes such as Electron mobility, Buffer and Electrical connection, which intersect with Layer. His work carried out in the field of Substrate brings together such families of science as Electronic engineering, Semiconductor device and Semiconductor.
His scientific interests lie mostly in Optoelectronics, Transistor, High-electron-mobility transistor, Nanotechnology and Biosensor. He is interested in Electron mobility, which is a field of Optoelectronics. In his study, which falls under the umbrella issue of Electron mobility, Analytical chemistry is strongly linked to Molecular beam epitaxy.
His Transistor research integrates issues from Wide-bandgap semiconductor, Gallium nitride, Relaxation and Stress. His High-electron-mobility transistor study incorporates themes from Ion and Resolution. His research investigates the connection with Quantum well and areas like Anisotropy which intersect with concerns in Condensed matter physics.
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Resonant cavity-enhanced (RCE) photodetectors
K. Kishino;M.S. Unlu;J.-I. Chyi;J. Reed.
IEEE Journal of Quantum Electronics (1991)
Semiconductor device and method of fabrication the same
Yang Chun-Chieh;Chyi Jen-Inn;Lee Geng-Yen.
Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities.
Wen Hao Chang;Wen Yen Chen;Hsiang Szu Chang;Tung Po Hsieh.
Physical Review Letters (2006)
Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
Yen Sheng Lin;Kung Jeng Ma;C. Hsu;Shih Wei Feng.
Applied Physics Letters (2000)
In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K
Lin Jiang;Sheng S. Li;Nien Tze Yeh;Jen Inn Chyi.
Applied Physics Letters (2003)
AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy
Akihiko Kikuchi;Ryo Bannai;Katsumi Kishino;Chia Ming Lee.
Applied Physics Letters (2002)
Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum
Chia Ho Chu;Indu Sarangadharan;Abiral Regmi;Yen Wen Chen.
Scientific Reports (2017)
Growth of InSb and InAs1−xSbx on GaAs by molecular beam epitaxy
J.‐I. Chyi;S. Kalem;N. S. Kumar;C. W. Litton.
Applied Physics Letters (1988)
Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
Shih Wei Feng;Yung Chen Cheng;Yi Yin Chung;C. C. Yang.
Journal of Applied Physics (2002)
Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots
Wen-Hao Chang;T. M. Hsu;C. C. Huang;S. L. Hsu.
Physical Review B (2000)
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