D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 36 Citations 6,834 464 World Ranking 3473 National Ranking 59

Research.com Recognitions

Awards & Achievements

2011 - IEEE Fellow For contributions to III-V compound semiconductor optoelectronic devices

2011 - SPIE Fellow

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

His primary areas of investigation include Optoelectronics, Photoluminescence, Condensed matter physics, Quantum well and Quantum dot. His Optoelectronics and Wide-bandgap semiconductor, Heterojunction, Wavelength, Quantum efficiency and Gallium arsenide investigations all form part of his Optoelectronics research activities. His Photoluminescence research includes themes of Annealing, Crystallographic defect, Stark effect, Mineralogy and Infrared spectroscopy.

His studies deal with areas such as Spectral line and Photocurrent as well as Condensed matter physics. Jen-Inn Chyi interconnects Indium, Activation energy, Luminescence, Spectroscopy and Molecular physics in the investigation of issues within Quantum well. His Quantum dot study combines topics from a wide range of disciplines, such as Blueshift, Intermediate state, Redistribution and Photon.

His most cited work include:

  • Resonant cavity-enhanced (RCE) photodetectors (321 citations)
  • Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities. (230 citations)
  • Semiconductor device and method of fabricating the same (217 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Optoelectronics, Heterojunction, Gallium arsenide, Optics and Quantum well. His study in Optoelectronics is interdisciplinary in nature, drawing from both Layer, Gallium nitride and Molecular beam epitaxy. His biological study spans a wide range of topics, including Electron mobility and Analytical chemistry.

His study looks at the relationship between Heterojunction and topics such as Bipolar junction transistor, which overlap with Common emitter. The concepts of his Gallium arsenide study are interwoven with issues in Current density, Quantum efficiency and Laser, Semiconductor laser theory. The study incorporates disciplines such as Indium and Condensed matter physics in addition to Quantum well.

He most often published in these fields:

  • Optoelectronics (77.51%)
  • Heterojunction (17.62%)
  • Gallium arsenide (16.80%)

What were the highlights of his more recent work (between 2012-2021)?

  • Optoelectronics (77.51%)
  • Transistor (10.30%)
  • High-electron-mobility transistor (8.40%)

In recent papers he was focusing on the following fields of study:

Jen-Inn Chyi mainly focuses on Optoelectronics, Transistor, High-electron-mobility transistor, Layer and Substrate. Jen-Inn Chyi mostly deals with Heterojunction in his studies of Optoelectronics. The various areas that Jen-Inn Chyi examines in his Transistor study include Stress, Electron, Sensitivity and Current.

His research integrates issues of Ohmic contact, Annealing, Microwave and Resolution in his study of High-electron-mobility transistor. His work deals with themes such as Electron mobility, Buffer and Electrical connection, which intersect with Layer. His work carried out in the field of Substrate brings together such families of science as Electronic engineering, Semiconductor device and Semiconductor.

Between 2012 and 2021, his most popular works were:

  • Semiconductor device and method of fabricating the same (217 citations)
  • AlGaN/GaN high electron mobility transistors for protein-peptide binding affinity study. (24 citations)
  • Enumeration of circulating tumor cells and investigation of cellular responses using aptamer-immobilized AlGaN/GaN high electron mobility transistor sensor array (18 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

His scientific interests lie mostly in Optoelectronics, Transistor, High-electron-mobility transistor, Nanotechnology and Biosensor. He is interested in Electron mobility, which is a field of Optoelectronics. In his study, which falls under the umbrella issue of Electron mobility, Analytical chemistry is strongly linked to Molecular beam epitaxy.

His Transistor research integrates issues from Wide-bandgap semiconductor, Gallium nitride, Relaxation and Stress. His High-electron-mobility transistor study incorporates themes from Ion and Resolution. His research investigates the connection with Quantum well and areas like Anisotropy which intersect with concerns in Condensed matter physics.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Resonant cavity-enhanced (RCE) photodetectors

K. Kishino;M.S. Unlu;J.-I. Chyi;J. Reed.
IEEE Journal of Quantum Electronics (1991)

448 Citations

Semiconductor device and method of fabrication the same

Yang Chun-Chieh;Chyi Jen-Inn;Lee Geng-Yen.
(2017)

356 Citations

Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities.

Wen Hao Chang;Wen Yen Chen;Hsiang Szu Chang;Tung Po Hsieh.
Physical Review Letters (2006)

334 Citations

Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

Yen Sheng Lin;Kung Jeng Ma;C. Hsu;Shih Wei Feng.
Applied Physics Letters (2000)

292 Citations

In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K

Lin Jiang;Sheng S. Li;Nien Tze Yeh;Jen Inn Chyi.
Applied Physics Letters (2003)

199 Citations

AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

Akihiko Kikuchi;Ryo Bannai;Katsumi Kishino;Chia Ming Lee.
Applied Physics Letters (2002)

182 Citations

Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum

Chia Ho Chu;Indu Sarangadharan;Abiral Regmi;Yen Wen Chen.
Scientific Reports (2017)

177 Citations

Growth of InSb and InAs1−xSbx on GaAs by molecular beam epitaxy

J.‐I. Chyi;S. Kalem;N. S. Kumar;C. W. Litton.
Applied Physics Letters (1988)

139 Citations

Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures

Shih Wei Feng;Yung Chen Cheng;Yi Yin Chung;C. C. Yang.
Journal of Applied Physics (2002)

129 Citations

Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots

Wen-Hao Chang;T. M. Hsu;C. C. Huang;S. L. Hsu.
Physical Review B (2000)

124 Citations

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