World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
10372
World Ranking
2523
National Ranking
34

Research.com Recognitions

  • 2011 - IEEE Fellow For contributions to III-V compound semiconductor optoelectronic devices
  • 2011 - SPIE Fellow

Overview

Jen-Inn Chyi is affiliated with National Central University in Taiwan and has contributed notably to the fields of Materials Science and Physics and Astronomy. Their research spans several subfields including Condensed Matter Physics, Materials Chemistry, Mechanics of Materials, and Electronic, Optical, and Magnetic Materials.

Their recent scholarly output includes papers published in peer-reviewed journals such as ACS Applied Nano Materials and Materials. These papers address advanced topics within semiconductor devices and nanomaterials. Noteworthy publications include:

  • Crystal Transformation of Cubic BN Nanoislands to Rhombohedral BN Sheets on AlN for Deep-UV Light-Emitting Diodes, 2020, ACS Applied Nano Materials
  • Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array, 2021, Materials

The main research topics covered by Chyi include:

  • GaN-based semiconductor devices and materials
  • Boron and Carbon Nanomaterials Research
  • Metal and Thin Film Mechanics
  • Ga2O3 and related materials
  • ZnO doping and properties

Collaboration with other researchers is evident from co-authors who have frequently worked alongside Chyi. These include Chun-Pin Huang, Muzafar Ahmad Rather, Chien-Ting Wu, R. Loganathan, and Ying-Hao Ju.

Chyi's work has been recognized through awards such as being named IEEE Fellow in 2011 for contributions to III-V compound semiconductor optoelectronic devices and SPIE Fellow the same year.

Best Publications

  • Resonant cavity-enhanced (RCE) photodetectors

    K. Kishino;M.S. Unlu;J.-I. Chyi;J. Reed

  • Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities.

    Wen Hao Chang;Wen Yen Chen;Hsiang Szu Chang;Tung Po Hsieh

  • Semiconductor device and method of fabrication the same

    Yang Chun-Chieh;Chyi Jen-Inn;Lee Geng-Yen

  • Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

    Yen Sheng Lin;Kung Jeng Ma;C. Hsu;Shih Wei Feng

  • Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum

    Chia Ho Chu;Indu Sarangadharan;Abiral Regmi;Yen Wen Chen

  • In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K

    Lin Jiang;Sheng S. Li;Nien Tze Yeh;Jen Inn Chyi

  • AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

    Akihiko Kikuchi;Ryo Bannai;Katsumi Kishino;Chia Ming Lee

  • High sensitivity cardiac troponin I detection in physiological environment using AlGaN/GaN High Electron Mobility Transistor (HEMT) Biosensors.

    Indu Sarangadharan;Abiral Regmi;Yen Wen Chen;Chen Pin Hsu

  • Comparison of GaN p-i-n and Schottky rectifier performance

    A.P. Zhan;G.T. Dang;Fan Ren;Hyun Cho

  • Growth of InSb and InAs1−xSbx on GaAs by molecular beam epitaxy

    J.‐I. Chyi;S. Kalem;N. S. Kumar;C. W. Litton

  • MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

    Y. Irokawa;Y. Nakano;M. Ishiko;T. Kachi

  • Gd2O3/GaN metal-oxide-semiconductor field-effect transistor

    J. W. Johnson;B. Luo;F. Ren;B. P. Gila

  • GaN electronics for high power, high temperature applications

    S.J. Pearton;F. Ren;A.P. Zhang;G. Dang

  • Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers

    J.W. Johnson;A.P. Zhang;Wen-Ben Luo;Fan Ren

  • Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

    B. S. Kang;S. Kim;J. Kim;F. Ren

  • Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots

    Wen-Hao Chang;T. M. Hsu;C. C. Huang;S. L. Hsu

  • High voltage GaN Schottky rectifiers

    G.T. Dang;A.P. Zhang;F. Ren;X.A. Cao

  • Vertical and lateral GaN rectifiers on free-standing GaN substrates

    A. P. Zhang;J. W. Johnson;B. Luo;F. Ren

  • Light emitting diode element and method for fabricating the same

    Hung-Cheng Lin;Chia-Ming Lee;Jen-Inn Chyi

  • Tuning the energy levels of self-assembled inas quantum dots by rapid thermal annealing

    T. M. Hsu;Y. S. Lan;Wen-Hao Chang;N. T. Yeh

  • AlGaN/GaN HEMT based liquid sensors

    R. Mehandru;B. Luo;B.S. Kang;Jihyun Kim

  • Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector

    M. S. Ünlü;K. Kishino;J.-I. Chyi;L. Arsenault

Frequent Co-Authors

Hadis Morkoç
Hadis Morkoç Virginia Commonwealth University
Chi-Kuang Sun
Chi-Kuang Sun National Taiwan University
Wen-Hao Chang
Wen-Hao Chang National Yang Ming Chiao Tung University
Fan Ren
Fan Ren University of Florida
M. S. Ünlü
M. S. Ünlü Boston University
Clement Hsingjen Wann
Clement Hsingjen Wann Taiwan Semiconductor Manufacturing Company (Taiwan)
Jin-Wei Shi
Jin-Wei Shi National Central University
Joachim Piprek
Joachim Piprek NUSOD Institute
Stephen J. Pearton
Stephen J. Pearton University of Florida
Gwo-Bin Lee
Gwo-Bin Lee National Tsing Hua University

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