World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
47
Citations
13438
World Ranking
3152
National Ranking
43

Wen-Hao Chang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Wen-Hao Chang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 223 publications — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Wen-Hao Chang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Wen-Hao Chang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 47 D-Index — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Wen-Hao Chang is affiliated with National Yang Ming Chiao Tung University in Taiwan. Their research primarily spans the fields of Materials Science and Engineering, with particular emphasis on Materials Chemistry and Electrical and Electronic Engineering. Their work also covers subfields such as Atomic and Molecular Physics, and Optics, as well as Biomedical Engineering and Artificial Intelligence.

The main topics of Chang's research include:

  • 2D Materials and Applications
  • Graphene research and applications
  • Perovskite Materials and Applications
  • MXene and MAX Phase Materials
  • Nanowire Synthesis and Applications
  • Chalcogenide Semiconductor Thin Films
  • Molecular Junctions and Nanostructures

Chang has contributed multiple papers to a variety of publication venues. The most frequent venues include:

  • ACS Nano
  • arXiv (Cornell University)
  • Nano Letters
  • Conference on Lasers and Electro-Optics
  • 2022 International Electron Devices Meeting (IEDM)

Recent papers authored or co-authored by Wen-Hao Chang include:

  • "Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)" (2020) published in Nature
  • "Bidirectional All-Optical Synapses Based on a 2D Bi2O2Se/Graphene Hybrid Structure for Multifunctional Optoelectronics" (2020) published in Advanced Functional Materials
  • "Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides" (2020) published in Nature Materials
  • "Oriented lateral growth of two-dimensional materials on c-plane sapphire" (2023) published in Nature Nanotechnology
  • "Low-defect-density WS2 by hydroxide vapor phase deposition" (2022) published in Nature Communications

The scientist collaborates frequently with peers, including:

  • Li-Syuan Lu
  • Lain-Jong Li
  • Chih-Kang Shih
  • Yann-Wen Lan
  • H.-S. Philip Wong

Best Publications

  • Large-area synthesis of highly crystalline WSe2 monolayers and device applications

    Jing Kai Huang;Jiang Pu;Chang Lung Hsu;Ming Hui Chiu

  • Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

    Ming Yang Li;Yumeng Shi;Chia Chin Cheng;Li Syuan Lu

  • Large-Area Aiming Synthesis of WSe2 Monolayers

    Jing-Kai Huang;Jiang Pu;Chih-Piao Chuu;Chang-Lung Hsu

  • Plasmonic Nanolaser Using Epitaxially Grown Silver Film

    Yu Jung Lu;Jisun Kim;Hung Ying Chen;Chihhui Wu

  • Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection.

    Yung Huang Chang;Wenjing Zhang;Yihan Zhu;Yu Han

  • Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

    Tse An Chen;Chih Piao Chuu;Chien Chih Tseng;Chao Kai Wen

  • Bandgap tunability at single-layer molybdenum disulphide grain boundaries

    Yu Li Huang;Yifeng Chen;Wenjing Zhang;Su Ying Quek

  • Purely in-plane ferroelectricity in monolayer SnS at room temperature

    Naoki Higashitarumizu;Hayami Kawamoto;Chien Ju Lee;Bo Han Lin

  • Room-Temperature Ferroelectricity in Hexagonally Layered α-In2Se3 Nanoflakes down to the Monolayer Limit

    Fei Xue;Weijin Hu;Ko Chun Lee;Li Syuan Lu

  • Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities.

    Wen Hao Chang;Wen Yen Chen;Hsiang Szu Chang;Tung Po Hsieh

  • Spectroscopic signatures for interlayer coupling in MoS2-WSe2 van der Waals stacking.

    Ming Hui Chiu;Ming Yang Li;Wengjing Zhang;Wengjing Zhang;Wei Ting Hsu

  • Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal α-In2Se3.

    Fei Xue;Fei Xue;Junwei Zhang;Weijin Hu;Wei Ting Hsu

  • All-color plasmonic nanolasers with ultralow thresholds: autotuning mechanism for single-mode lasing.

    Yu Jung Lu;Chun Yuan Wang;Jisun Kim;Hung Ying Chen

  • Bidirectional All-Optical Synapses Based on a 2D Bi 2 O 2 Se/Graphene Hybrid Structure for Multifunctional Optoelectronics

    Chia Ming Yang;Tsung Cheng Chen;Dharmendra Verma;Lain Jong Li;Lain Jong Li

  • Optically initialized robust valley-polarized holes in monolayer WSe2.

    Wei Ting Hsu;Yen Lun Chen;Chiang Hsiao Chen;Chiang Hsiao Chen;Pang Shiuan Liu

  • Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment

    Hau Vei Han;Ang Yu Lu;Li Syuan Lu;Jing Kai Huang

  • Layered MoS2 grown on c - sapphire by pulsed laser deposition

    Yen Teng Ho;Chun Hao Ma;Tien Tung Luong;Lin Lung Wei

  • Evidence of indirect gap in monolayer WSe2

    Wei Ting Hsu;Li Syuan Lu;Dean Wang;Jing Kai Huang

  • Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

    S. Gwo;Chung-Lin Wu;C. H. Shen;W. H. Chang

  • Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides

    Areej Aljarb;Areej Aljarb;Jui-Han Fu;Chih-Chan Hsu;Chih-Chan Hsu;Chih-Piao Chuu

  • Band Gap‐Tunable Molybdenum Sulfide Selenide Monolayer Alloy

    Sheng Han Su;Sheng Han Su;Yu Te Hsu;Yung Huang Chang;Ming Hui Chiu

Frequent Co-Authors

Lain-Jong Li
Lain-Jong Li National University of Singapore
Jen-Inn Chyi
Jen-Inn Chyi National Central University
Shangjr Gwo
Shangjr Gwo National Tsing Hua University
Hao-Chung Kuo
Hao-Chung Kuo National Yang Ming Chiao Tung University
Tuo-Hung Hou
Tuo-Hung Hou National Yang Ming Chiao Tung University
Yumeng Shi
Yumeng Shi Shenzhen University
Taishi Takenobu
Taishi Takenobu Nagoya University
Chih-I Wu
Chih-I Wu National Taiwan University
Jr-Hau He
Jr-Hau He City University of Hong Kong
Xixiang Zhang
Xixiang Zhang King Abdullah University of Science and Technology

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Related Online Degrees & Career Pathways

For students pursuing Electronics and Electrical Engineering, expanding qualifications through related online degrees can open diverse career opportunities. For instance, earning a project manager bachelor degree equips engineers with essential leadership and organizational skills, preparing them to oversee complex technical projects efficiently.

Many professionals prefer accelerated online degree programs designed for working adults. These programs allow students to earn degrees faster without compromising study quality, making them ideal for engineers balancing work and education.

Additionally, pursuing a master's in instructional design can benefit those interested in developing training programs or educational materials within technical industries. This degree supports roles that bridge technical expertise and educational development.

Another flexible option is competency based masters, which focuses on mastering skills rather than time spent in class. This approach benefits working engineers by recognizing their existing knowledge and allowing them to progress at their own pace.

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