Origin of efficiency droop in GaN-based light-emitting diodes
Min-Ho Kim;Martin F. Schubert;Qi Dai;Jong Kyu Kim.
Applied Physics Letters (2007)
Efficiency droop in nitride-based light-emitting diodes
Physica Status Solidi (a) (2010)
Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation
Nitride semiconductor devices : principles and simulation
Physics of high-power InGaN/GaN lasers
J. Piprek;S. Nakamura.
IEE Proceedings - Optoelectronics (2002)
What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?
J. Piprek;J.K. White;A.J. SpringThorpe.
IEEE Journal of Quantum Electronics (2002)
Band gap bowing and refractive index spectra of polycrystalline AlxIn1−xN films deposited by sputtering
T. Peng;J. Piprek;G. Qiu;J. O. Olowolafe.
Applied Physics Letters (1997)
Material parameters of quaternary III - V semiconductors for multilayer mirrors at wavelength
Mustafa Güden;Joachim Piprek.
Modelling and Simulation in Materials Science and Engineering (1996)
Thermionic emission cooling in single barrier heterostructures
Ali Shakouri;Chris LaBounty;Joachim Piprek;Patrick Abraham.
Applied Physics Letters (1999)
Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers
J. Piprek;P. Abraham;J.E. Bowers.
IEEE Journal of Quantum Electronics (2000)
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