Daniel F. Feezell

Overview

Best Publications

• Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

  Steven P. Denbaars;Daniel Feezell;Katheryn Kelchner;Siddha Pimputkar

  507
  Citations

• Solid-state optical device having enhanced indium content in active regions

  James W. Raring;Daniel F. Feezell;Shuji Nakamura

  434
  Citations

• Semipolar $({\hbox{20}}ar{{\hbox{2}}}ar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

  D. F. Feezell;J. S. Speck;S. P. DenBaars;S. Nakamura

  307
  Citations

• Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

  Mathew C. Schmidt;Kwang-Choong Kim;Robert M. Farrell;Daniel F. Feezell

  289
  Citations

• COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs

  James W. Raring;Daniel F. Feezell;Mark P. D'Evelyn

  276
  Citations

• HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN

  James W. Raring;Daniel F. Feezell

  247
  Citations

• High-Power Blue-Violet Semipolar (2021) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2

  Yuji Zhao;Shinichi Tanaka;Chih Chien Pan;Kenji Fujito

  243
  Citations

• Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers

  Robert M. Farrell;Mathew C. Schmidt;Kwang Choong Kim;Hisashi Masui

  226
  Citations

• Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

  Yuji Zhao;Qimin Yan;Chia Yen Huang;Shih Chieh Huang

  222
  Citations

• Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser

  Daniel F. Feezell;Daniel A. Cohen;Robert M. Farrell;Masahiro Ishida

  217
  Citations

• Optical device structure using gan substrates for laser applications

  James W. Raring;Daniel F. Feezell;Nicholas J. Pfister;Rajat Sharma

  204
  Citations

• Selective area epitaxy growth method and structure

  James W. Raring;Daniel F. Feezell;Shuji Nakamura

  201
  Citations

• Semipolar (10ar{1}ar{1}) InGaN/GaN Laser Diodes on Bulk GaN Substrates

  Anurag Tyagi;Hong Zhong;Roy B. Chung;Daniel F. Feezell

  199
  Citations

• Group III-nitride lasers: a materials perspective

  Matthew T. Hardy;Daniel F. Feezell;Steven P. DenBaars;Shuji Nakamura

  190
  Citations

• Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers

  Casey Holder;James S. Speck;Steven P. DenBaars;Shuji Nakamura

  184
  Citations

• Self-aligned multi-dielectric-layer lift off process for laser diode stripes

  James W. Raring;Daniel F. Feezell;Nick Pfister

  173
  Citations

• Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates

  James W. Raring;Daniel F. Feezell

  173
  Citations

• Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes

  Daniel F. Feezell;Matthew C. Schmidt;Kwang Choong Kim;Robert M. Farrell

  167
  Citations

• Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

  Daniel F. Feezell;Mathew C. Schmidt;Steven P. DenBaars;Shuji Nakamura

  164
  Citations

• Method and structure for manufacture of light emitting diode devices using bulk GaN

  Christiane Poblenz;Mathew C. Schmidt;Daniel F. Feezell;James W. Raring

  158
  Citations

• High-power, low-efficiency-droop semipolar (202̄1̄) single-quantum-well blue light-emitting diodes

  Chih-Chien Pan;Shinichi Tanaka;Feng Wu;Yuji Zhao

  144
  Citations

• Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting

  Daniel Feezell;Shuji Nakamura

  139
  Citations

• Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.

  Changyi Li;Jeremy B. Wright;Sheng Liu;Ping Lu

  129
  Citations

• AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes

  Daniel F. Feezell;Mathew C. Schmidt;Robert M. Farrell;Kwang-Choong Kim

  117
  Citations

• Nonpolar ${m}$ -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth

  Arman Rashidi;Morteza Monavarian;Andrew Aragon;Ashwin Rishinaramangalam

  112
  Citations

• Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes

  Robert M. Farrell;Daniel F. Feezell;Mathew C. Schmidt;Daniel A. Haeger

  110
  Citations

• 444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer

  Po Shan Hsu;Matthew T. Hardy;Feng Wu;Ingrid Koslow

  100
  Citations

• High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes

  Yuji Zhao;Shinichi Tanaka;Qimin Yan;Chia Yen Huang

  98
  Citations

• Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes

  Yoshinobu Kawaguchi;Chia Yen Huang;Yuh Renn Wu;Qimin Yan

  91
  Citations

• Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes.

  Mohsen Nami;Isaac E. Stricklin;Kenneth M. DaVico;Saadat Mishkat-Ul-Masabih

  90
  Citations

• Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching

  C. O. Holder;J. T. Leonard;R. M. Farrell;D. A. Cohen

  81
  Citations