World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
5503
World Ranking
5149
National Ranking
1785

Daniel F. Feezell publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Daniel F. Feezell sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 140 publications — 11th percentile

11% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Daniel F. Feezell D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Daniel F. Feezell sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Daniel F. Feezell is affiliated with the University of New Mexico in the United States. Their research spans physics and astronomy as well as engineering, with focused expertise in semiconductor devices and materials.

The primary fields of study associated with their work include:

  • Physics and Astronomy
  • Engineering

Within these disciplines, Feezell's research covers several subfields such as:

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Materials Chemistry

Their main research topics highlight specific areas of material science and device engineering, including:

  • GaN-based semiconductor devices and materials
  • Semiconductor Quantum Structures and Devices
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Nanowire Synthesis and Applications
  • Semiconductor materials and devices
  • Force Microscopy Techniques and Applications

Feezell's publication record involves contributions to several prominent journals. Frequent publication venues include:

  • Journal of Applied Physics
  • Applied Physics Letters
  • AIP Advances
  • arXiv (Cornell University)
  • Nano Letters

Notable recent papers authored or coauthored by Feezell include:

  • Advanced Scanning Probe Nanolithography Using GaN Nanowires, 2021, Nano Letters
  • Carrier dynamics in blue, cyan, and green InGaN/GaN LEDs measured by small-signal electroluminescence, 2023, Applied Physics Letters
  • High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth, 2020, IEEE Photonics Technology Letters
  • Influence of trap-assisted and intrinsic Auger-Meitner recombination on efficiency droop in green InGaN/GaN LEDs, 2023, Applied Physics Letters
  • Multiple-carrier-lifetime model for carrier dynamics in InGaN/GaN LEDs with a non-uniform carrier distribution, 2024, Journal of Applied Physics

Frequent collaborators working alongside Feezell include:

  • Xuefeng Li
  • Elizabeth DeJong
  • Rob Armitage
  • Ashwin K. Rishinaramangalam
  • Andrew Aragon

Best Publications

  • Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

    Steven P. Denbaars;Daniel Feezell;Katheryn Kelchner;Siddha Pimputkar

  • Solid-state optical device having enhanced indium content in active regions

    James W. Raring;Daniel F. Feezell;Shuji Nakamura

  • Semipolar $({\hbox{20}}ar{{\hbox{2}}}ar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

    D. F. Feezell;J. S. Speck;S. P. DenBaars;S. Nakamura

  • Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

    Mathew C. Schmidt;Kwang-Choong Kim;Robert M. Farrell;Daniel F. Feezell

  • COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs

    James W. Raring;Daniel F. Feezell;Mark P. D'Evelyn

  • HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN

    James W. Raring;Daniel F. Feezell

  • High-Power Blue-Violet Semipolar (2021) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2

    Yuji Zhao;Shinichi Tanaka;Chih Chien Pan;Kenji Fujito

  • Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers

    Robert M. Farrell;Mathew C. Schmidt;Kwang Choong Kim;Hisashi Masui

  • Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

    Yuji Zhao;Qimin Yan;Chia Yen Huang;Shih Chieh Huang

  • Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser

    Daniel F. Feezell;Daniel A. Cohen;Robert M. Farrell;Masahiro Ishida

  • Optical device structure using gan substrates for laser applications

    James W. Raring;Daniel F. Feezell;Nicholas J. Pfister;Rajat Sharma

  • Selective area epitaxy growth method and structure

    James W. Raring;Daniel F. Feezell;Shuji Nakamura

  • Semipolar (10ar{1}ar{1}) InGaN/GaN Laser Diodes on Bulk GaN Substrates

    Anurag Tyagi;Hong Zhong;Roy B. Chung;Daniel F. Feezell

  • Group III-nitride lasers: a materials perspective

    Matthew T. Hardy;Daniel F. Feezell;Steven P. DenBaars;Shuji Nakamura

  • Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers

    Casey Holder;James S. Speck;Steven P. DenBaars;Shuji Nakamura

  • Self-aligned multi-dielectric-layer lift off process for laser diode stripes

    James W. Raring;Daniel F. Feezell;Nick Pfister

  • Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates

    James W. Raring;Daniel F. Feezell

  • Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes

    Daniel F. Feezell;Matthew C. Schmidt;Kwang Choong Kim;Robert M. Farrell

  • Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

    Daniel F. Feezell;Mathew C. Schmidt;Steven P. DenBaars;Shuji Nakamura

  • Method and structure for manufacture of light emitting diode devices using bulk GaN

    Christiane Poblenz;Mathew C. Schmidt;Daniel F. Feezell;James W. Raring

  • High-power, low-efficiency-droop semipolar (202̄1̄) single-quantum-well blue light-emitting diodes

    Chih-Chien Pan;Shinichi Tanaka;Feng Wu;Yuji Zhao

  • Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting

    Daniel Feezell;Shuji Nakamura

  • Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.

    Changyi Li;Jeremy B. Wright;Sheng Liu;Ping Lu

  • AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes

    Daniel F. Feezell;Mathew C. Schmidt;Robert M. Farrell;Kwang-Choong Kim

  • Nonpolar ${m}$ -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth

    Arman Rashidi;Morteza Monavarian;Andrew Aragon;Ashwin Rishinaramangalam

  • Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes

    Robert M. Farrell;Daniel F. Feezell;Mathew C. Schmidt;Daniel A. Haeger

  • 444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer

    Po Shan Hsu;Matthew T. Hardy;Feng Wu;Ingrid Koslow

  • High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes

    Yuji Zhao;Shinichi Tanaka;Qimin Yan;Chia Yen Huang

  • Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes

    Yoshinobu Kawaguchi;Chia Yen Huang;Yuh Renn Wu;Qimin Yan

  • Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes.

    Mohsen Nami;Isaac E. Stricklin;Kenneth M. DaVico;Saadat Mishkat-Ul-Masabih

  • Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching

    C. O. Holder;J. T. Leonard;R. M. Farrell;D. A. Cohen

Frequent Co-Authors

Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
James S. Speck
James S. Speck University of California, Santa Barbara
Kenji Fujito
Kenji Fujito Mitsubishi Chemical Corporation
James W. Raring
James W. Raring Kyocera (United States)
Steven R. J. Brueck
Steven R. J. Brueck University of New Mexico
Igal Brener
Igal Brener Sandia National Laboratories
Larry A. Coldren
Larry A. Coldren University of California, Santa Barbara
Chris G. Van de Walle
Chris G. Van de Walle University of California, Santa Barbara
Feng Wu
Feng Wu Huazhong University of Science and Technology

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