The scientist’s investigation covers issues in Optoelectronics, Laser, Diode, Optics and Light-emitting diode. His study in Optoelectronics is interdisciplinary in nature, drawing from both Quantum well, Substrate and Nitride. His Quantum well study integrates concerns from other disciplines, such as Wide-bandgap semiconductor, Cladding and Quantum efficiency.
His work is dedicated to discovering how Laser, Polarization are connected with Crystal growth, Critical thickness, Doping and Waveguide and other disciplines. Daniel F. Feezell merges Diode with Voltage droop in his study. His work deals with themes such as Gallium nitride, White light and Light emitting device, which intersect with Light-emitting diode.
Daniel F. Feezell mostly deals with Optoelectronics, Diode, Light-emitting diode, Laser and Optics. His Optoelectronics research includes elements of Quantum well and Gallium nitride. His Diode course of study focuses on Indium and Selective area epitaxy.
His study looks at the intersection of Light-emitting diode and topics like Metalorganic vapour phase epitaxy with Nanostructure. He interconnects Polarization and Nitride in the investigation of issues within Laser. The concepts of his Optics study are interwoven with issues in Substrate and Voltage.
His primary scientific interests are in Optoelectronics, Diode, Analytical chemistry, Atom probe and Plane. His study in Optoelectronics is interdisciplinary in nature, drawing from both Layer and Gallium nitride. His studies in Gallium nitride integrate themes in fields like Quantum well, Spontaneous emission, Superluminescent diode and Waveguide.
His Diode research includes elements of Smart lighting and Blue light. In his study, Indium, Laser and Nanorod is inextricably linked to Heterojunction, which falls within the broad field of Analytical chemistry. The Atom probe study combines topics in areas such as Nitride semiconductors, Extreme ultraviolet, Characterization, Semiconductor and Radiation.
His main research concerns Diode, Optoelectronics, Plane, Power electronics and High voltage. The various areas that Daniel F. Feezell examines in his Diode study include Quantum well, Spontaneous emission and Waveguide. Optoelectronics is frequently linked to Gallium nitride in his study.
His study deals with a combination of Plane and Impurity.
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Solid-state optical device having enhanced indium content in active regions
James W. Raring;Daniel F. Feezell;Shuji Nakamura.
(2009)
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. Denbaars;Daniel Feezell;Katheryn Kelchner;Siddha Pimputkar.
Acta Materialia (2013)
Semipolar $({\hbox{20}}ar{{\hbox{2}}}ar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
D. F. Feezell;J. S. Speck;S. P. DenBaars;S. Nakamura.
IEEE/OSA Journal of Display Technology (2013)
Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
Mathew C. Schmidt;Kwang-Choong Kim;Robert M. Farrell;Daniel F. Feezell.
Japanese Journal of Applied Physics (2007)
COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs
James W. Raring;Daniel F. Feezell;Mark P. D'Evelyn.
(2009)
HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
James W. Raring;Daniel F. Feezell.
(2009)
High-Power Blue-Violet Semipolar (2021) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
Yuji Zhao;Shinichi Tanaka;Chih Chien Pan;Kenji Fujito.
Applied Physics Express (2011)
Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers
Robert M. Farrell;Mathew C. Schmidt;Kwang Choong Kim;Hisashi Masui.
(2008)
Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser
Daniel F. Feezell;Daniel A. Cohen;Robert M. Farrell;Masahiro Ishida.
(2007)
Optical device structure using gan substrates for laser applications
James W. Raring;Daniel F. Feezell;Nicholas J. Pfister;Rajat Sharma.
(2010)
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