D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 39 Citations 7,006 145 World Ranking 2918 National Ranking 1146

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optics
  • Laser

The scientist’s investigation covers issues in Optoelectronics, Laser, Diode, Optics and Light-emitting diode. His study in Optoelectronics is interdisciplinary in nature, drawing from both Quantum well, Substrate and Nitride. His Quantum well study integrates concerns from other disciplines, such as Wide-bandgap semiconductor, Cladding and Quantum efficiency.

His work is dedicated to discovering how Laser, Polarization are connected with Crystal growth, Critical thickness, Doping and Waveguide and other disciplines. Daniel F. Feezell merges Diode with Voltage droop in his study. His work deals with themes such as Gallium nitride, White light and Light emitting device, which intersect with Light-emitting diode.

His most cited work include:

  • Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes (272 citations)
  • Semipolar $({\hbox{20}}ar{{\hbox{2}}}ar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting (271 citations)
  • Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays (259 citations)

What are the main themes of his work throughout his whole career to date?

Daniel F. Feezell mostly deals with Optoelectronics, Diode, Light-emitting diode, Laser and Optics. His Optoelectronics research includes elements of Quantum well and Gallium nitride. His Diode course of study focuses on Indium and Selective area epitaxy.

His study looks at the intersection of Light-emitting diode and topics like Metalorganic vapour phase epitaxy with Nanostructure. He interconnects Polarization and Nitride in the investigation of issues within Laser. The concepts of his Optics study are interwoven with issues in Substrate and Voltage.

He most often published in these fields:

  • Optoelectronics (89.74%)
  • Diode (38.46%)
  • Light-emitting diode (36.54%)

What were the highlights of his more recent work (between 2019-2021)?

  • Optoelectronics (89.74%)
  • Diode (38.46%)
  • Analytical chemistry (5.77%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Optoelectronics, Diode, Analytical chemistry, Atom probe and Plane. His study in Optoelectronics is interdisciplinary in nature, drawing from both Layer and Gallium nitride. His studies in Gallium nitride integrate themes in fields like Quantum well, Spontaneous emission, Superluminescent diode and Waveguide.

His Diode research includes elements of Smart lighting and Blue light. In his study, Indium, Laser and Nanorod is inextricably linked to Heterojunction, which falls within the broad field of Analytical chemistry. The Atom probe study combines topics in areas such as Nitride semiconductors, Extreme ultraviolet, Characterization, Semiconductor and Radiation.

Between 2019 and 2021, his most popular works were:

  • Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy (12 citations)
  • Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐Plane GaN Vertical p–n Diodes (6 citations)
  • High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth (2 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Optics
  • Laser

His main research concerns Diode, Optoelectronics, Plane, Power electronics and High voltage. The various areas that Daniel F. Feezell examines in his Diode study include Quantum well, Spontaneous emission and Waveguide. Optoelectronics is frequently linked to Gallium nitride in his study.

His study deals with a combination of Plane and Impurity.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Solid-state optical device having enhanced indium content in active regions

James W. Raring;Daniel F. Feezell;Shuji Nakamura.
(2009)

434 Citations

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

Steven P. Denbaars;Daniel Feezell;Katheryn Kelchner;Siddha Pimputkar.
Acta Materialia (2013)

382 Citations

Semipolar $({\hbox{20}}ar{{\hbox{2}}}ar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

D. F. Feezell;J. S. Speck;S. P. DenBaars;S. Nakamura.
IEEE/OSA Journal of Display Technology (2013)

290 Citations

Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

Mathew C. Schmidt;Kwang-Choong Kim;Robert M. Farrell;Daniel F. Feezell.
Japanese Journal of Applied Physics (2007)

281 Citations

COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs

James W. Raring;Daniel F. Feezell;Mark P. D'Evelyn.
(2009)

276 Citations

HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN

James W. Raring;Daniel F. Feezell.
(2009)

247 Citations

High-Power Blue-Violet Semipolar (2021) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2

Yuji Zhao;Shinichi Tanaka;Chih Chien Pan;Kenji Fujito.
Applied Physics Express (2011)

235 Citations

Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers

Robert M. Farrell;Mathew C. Schmidt;Kwang Choong Kim;Hisashi Masui.
(2008)

226 Citations

Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser

Daniel F. Feezell;Daniel A. Cohen;Robert M. Farrell;Masahiro Ishida.
(2007)

217 Citations

Optical device structure using gan substrates for laser applications

James W. Raring;Daniel F. Feezell;Nicholas J. Pfister;Rajat Sharma.
(2010)

204 Citations

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Best Scientists Citing Daniel F. Feezell

Shuji Nakamura

Shuji Nakamura

University of California, Santa Barbara

Publications: 172

Steven P. DenBaars

Steven P. DenBaars

University of California, Santa Barbara

Publications: 172

James S. Speck

James S. Speck

University of California, Santa Barbara

Publications: 169

James W. Raring

James W. Raring

Kyocera (United States)

Publications: 61

isamu akasaki

isamu akasaki

Meijo University

Publications: 59

Nelson Tansu

Nelson Tansu

University of Adelaide

Publications: 52

Jung Han

Jung Han

Yale University

Publications: 38

Hao-Chung Kuo

Hao-Chung Kuo

National Yang Ming Chiao Tung University

Publications: 37

Boon S. Ooi

Boon S. Ooi

King Abdullah University of Science and Technology

Publications: 36

Hongping Zhao

Hongping Zhao

The Ohio State University

Publications: 35

Kenji Fujito

Kenji Fujito

Mitsubishi Chemical Corporation

Publications: 33

Tien Khee Ng

Tien Khee Ng

King Abdullah University of Science and Technology

Publications: 32

Michael Kneissl

Michael Kneissl

Technical University of Berlin

Publications: 31

Feng Wu

Feng Wu

Huazhong University of Science and Technology

Publications: 31

Motoaki Iwaya

Motoaki Iwaya

Meijo University

Publications: 29

Satoshi Kamiyama

Satoshi Kamiyama

Meijo University

Publications: 28

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