World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
12690
World Ranking
1653
National Ranking
670

Materials Science

D-Index
62
Citations
13227
World Ranking
6507
National Ranking
1651

Jung Han publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jung Han sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 310 publications — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jung Han D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jung Han sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 60 D-Index — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Jung Han is affiliated with Yale University in the United States and has made contributions primarily in the fields of Engineering, Physics and Astronomy, and Materials Science. Their research spans several subfields including Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry, Biomedical Engineering, and Electronic, Optical and Magnetic Materials.

The scientist's work covers a range of topics related to semiconductor materials and devices. Key research areas include GaN-based semiconductor devices and materials, ZnO doping and properties, Ga2O3 and related materials, Semiconductor materials and devices, Semiconductor Lasers and Optical Devices, Gas Sensing Nanomaterials and Sensors, and Semiconductor Quantum Structures and Devices.

Jung Han has published multiple papers, some of which have attracted significant citations. Notable recent publications include:

  • Micro-Light Emitting Diode: From Chips to Applications, 2021, Laser & Photonics Review
  • Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist, 2020, Photonics Research
  • High-Bandwidth Green Semipolar (20-21) InGaN/GaN Micro Light-Emitting Diodes for Visible Light Communication, 2020, ACS Photonics
  • The micro-LED roadmap: status quo and prospects, 2023, Journal of Physics Photonics
  • RGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots, 2020, ACS Applied Materials & Interfaces

Frequent co-authors collaborating with Jung Han include Hsiang Chen, Bingjun Li, Chia-Feng Lin, Sizhen Wang, and Ming-Hsien Li. These collaborations have contributed to advancing the scope and impact of their research.

Jung Han's work has been published repeatedly in several venues, with multiple publications appearing in IEEE Sensors Journal, ECS Transactions, ECS Meeting Abstracts, SSRN Electronic Journal, and Journal of Crystal Growth.

Best Publications

  • The emergence and prospects of deep-ultraviolet light-emitting diode technologies

    Michael Kneissl;Michael Kneissl;Tae Yeon Seong;Jung Han;Hiroshi Amano

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • AlGaN/GaN quantum well ultraviolet light emitting diodes

    J. Han;M. H. Crawford;R. J. Shul;J. J. Figiel

  • Stress evolution during metalorganic chemical vapor deposition of GaN

    S. Hearne;E. Chason;J. Han;J. A. Floro

  • Graded band gap ohmic contact to p‐ZnSe

    Y. Fan;J. Han;L. He;J. Saraie

  • Low-Dislocation-Density GaN from a Single Growth on a Textured Substrate

    Carol I. H. Ashby;Christine C. Mitchell;Jung Han;Nancy A. Missert

  • Stress and Defect Control in GaN Using Low Temperature Interlayers

    Hiroshi Amano;Motoaki Iwaya;Takayuki Kashima;Maki Katsuragawa

  • Stress Engineering During Metalorganic Chemical Vapor Deposition of AlGaN/GaN Distributed Bragg Reflectors

    K. E. Waldrip;J. Han;J. J. Figiel;H. Zhou

  • Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

    B. Luo;J. W. Johnson;J. Kim;R. M. Mehandru

  • Micro-Light Emitting Diode: From Chips to Applications

    Peter J. Parbrook;Peter J. Parbrook;Brian Corbett;Jung Han;Tae Yeon Seong

  • Continuous-wave, room temperature, ridge waveguide green-blue diode laser

    A. Salokatve;H. Jeon;J. Ding;M. Hovinen

  • Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy

    C. Theodoropoulos;T.J. Mountziaris;H.K. Moffat;J. Han

  • Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue‐green laser diode

    G. C. Hua;N. Otsuka;D. C. Grillo;Y. Fan

  • Mesoporous GaN for Photonic Engineering-Highly Reflective GaN Mirrors as an Example

    Cheng Zhang;Sung Hyun Park;Danti Chen;Da Wei Lin

  • Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers

    J. Han;K. E. Waldrip;S. R. Lee;J. J. Figiel

  • Ga Vacancies as Dominant Intrinsic Acceptors in GaN Grown by Hydride Vapor Phase Epitaxy

    J. Oila;J. Kivioja;V. Ranki;K. Saarinen

  • Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist

    Sung-Wen Huang Chen;Yu-Ming Huang;Konthoujam James Singh;Yu-Chien Hsu

  • Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism

    Danti Chen;Hongdi Xiao;Jung Han

  • Brittle-ductile relaxation kinetics of strained AlGaN'GaN heterostructures

    S. J. Hearne;J. Han;S. R. Lee;J. A. Floro

  • Observation of the interfacial-field-induced weak antilocalization in InAs quantum structures

    G. L. Chen;J. Han;T. T. Huang;S. Datta

  • High-Bandwidth Green Semipolar (20-21) InGaN/GaN Micro Light-Emitting Diodes for Visible Light Communication

    Sung-Wen Huang Chen;Yu-Ming Huang;Yun-Han Chang;Yue Lin

  • Zinc‐blende MnTe: Epilayers and quantum well structures

    S. M. Durbin;J. Han;Sungki O;M. Kobayashi

Frequent Co-Authors

Arto V. Nurmikko
Arto V. Nurmikko Brown University
Qian Sun
Qian Sun Chinese Academy of Sciences
Jie Song
Jie Song Emory University
Robert L. Gunshor
Robert L. Gunshor Purdue University West Lafayette
Stephen J. Pearton
Stephen J. Pearton University of Florida
Fan Ren
Fan Ren University of Florida
Mary H. Crawford
Mary H. Crawford Sandia National Laboratories
In-Hwan Lee
In-Hwan Lee Korea University
Heonsu Jeon
Heonsu Jeon Seoul National University
Hiroshi Amano
Hiroshi Amano Nagoya University

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Related Online Degrees & Career Pathways

For those interested in Electronics and Electrical Engineering, expanding skills through related online degrees can enhance career opportunities. For example, pursuing an instructional design masters degree online can open doors to educational technology roles, blending technical expertise with training and development.

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To accommodate various schedules, consider online colleges with frequent start dates. These institutions allow students to begin their studies without waiting for traditional semester start times, promoting faster entry into advancing your career in electronics and electrical engineering.

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