World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
12690
World Ranking
1653
National Ranking
669

Materials Science

D-Index
62
Citations
13227
World Ranking
6509
National Ranking
1653

Overview

Jung Han is affiliated with Yale University in the United States and has made contributions primarily in the fields of Engineering, Physics and Astronomy, and Materials Science. Their research spans several subfields including Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry, Biomedical Engineering, and Electronic, Optical and Magnetic Materials.

The scientist's work covers a range of topics related to semiconductor materials and devices. Key research areas include GaN-based semiconductor devices and materials, ZnO doping and properties, Ga2O3 and related materials, Semiconductor materials and devices, Semiconductor Lasers and Optical Devices, Gas Sensing Nanomaterials and Sensors, and Semiconductor Quantum Structures and Devices.

Jung Han has published multiple papers, some of which have attracted significant citations. Notable recent publications include:

  • Micro-Light Emitting Diode: From Chips to Applications, 2021, Laser & Photonics Review
  • Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist, 2020, Photonics Research
  • High-Bandwidth Green Semipolar (20-21) InGaN/GaN Micro Light-Emitting Diodes for Visible Light Communication, 2020, ACS Photonics
  • The micro-LED roadmap: status quo and prospects, 2023, Journal of Physics Photonics
  • RGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots, 2020, ACS Applied Materials & Interfaces

Frequent co-authors collaborating with Jung Han include Hsiang Chen, Bingjun Li, Chia-Feng Lin, Sizhen Wang, and Ming-Hsien Li. These collaborations have contributed to advancing the scope and impact of their research.

Jung Han's work has been published repeatedly in several venues, with multiple publications appearing in IEEE Sensors Journal, ECS Transactions, ECS Meeting Abstracts, SSRN Electronic Journal, and Journal of Crystal Growth.

Best Publications

  • The emergence and prospects of deep-ultraviolet light-emitting diode technologies

    Michael Kneissl;Michael Kneissl;Tae Yeon Seong;Jung Han;Hiroshi Amano

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • AlGaN/GaN quantum well ultraviolet light emitting diodes

    J. Han;M. H. Crawford;R. J. Shul;J. J. Figiel

  • Stress evolution during metalorganic chemical vapor deposition of GaN

    S. Hearne;E. Chason;J. Han;J. A. Floro

  • Graded band gap ohmic contact to p‐ZnSe

    Y. Fan;J. Han;L. He;J. Saraie

  • Low-Dislocation-Density GaN from a Single Growth on a Textured Substrate

    Carol I. H. Ashby;Christine C. Mitchell;Jung Han;Nancy A. Missert

  • Stress and Defect Control in GaN Using Low Temperature Interlayers

    Hiroshi Amano;Motoaki Iwaya;Takayuki Kashima;Maki Katsuragawa

  • Stress Engineering During Metalorganic Chemical Vapor Deposition of AlGaN/GaN Distributed Bragg Reflectors

    K. E. Waldrip;J. Han;J. J. Figiel;H. Zhou

  • Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

    B. Luo;J. W. Johnson;J. Kim;R. M. Mehandru

  • Micro-Light Emitting Diode: From Chips to Applications

    Peter J. Parbrook;Peter J. Parbrook;Brian Corbett;Jung Han;Tae Yeon Seong

  • Continuous-wave, room temperature, ridge waveguide green-blue diode laser

    A. Salokatve;H. Jeon;J. Ding;M. Hovinen

  • Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy

    C. Theodoropoulos;T.J. Mountziaris;H.K. Moffat;J. Han

  • Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue‐green laser diode

    G. C. Hua;N. Otsuka;D. C. Grillo;Y. Fan

  • Mesoporous GaN for Photonic Engineering-Highly Reflective GaN Mirrors as an Example

    Cheng Zhang;Sung Hyun Park;Danti Chen;Da Wei Lin

  • Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers

    J. Han;K. E. Waldrip;S. R. Lee;J. J. Figiel

  • Ga Vacancies as Dominant Intrinsic Acceptors in GaN Grown by Hydride Vapor Phase Epitaxy

    J. Oila;J. Kivioja;V. Ranki;K. Saarinen

  • Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist

    Sung-Wen Huang Chen;Yu-Ming Huang;Konthoujam James Singh;Yu-Chien Hsu

  • Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism

    Danti Chen;Hongdi Xiao;Jung Han

  • Brittle-ductile relaxation kinetics of strained AlGaN'GaN heterostructures

    S. J. Hearne;J. Han;S. R. Lee;J. A. Floro

  • Observation of the interfacial-field-induced weak antilocalization in InAs quantum structures

    G. L. Chen;J. Han;T. T. Huang;S. Datta

  • High-Bandwidth Green Semipolar (20-21) InGaN/GaN Micro Light-Emitting Diodes for Visible Light Communication

    Sung-Wen Huang Chen;Yu-Ming Huang;Yun-Han Chang;Yue Lin

  • Zinc‐blende MnTe: Epilayers and quantum well structures

    S. M. Durbin;J. Han;Sungki O;M. Kobayashi

Frequent Co-Authors

Arto V. Nurmikko
Arto V. Nurmikko Brown University
Qian Sun
Qian Sun Chinese Academy of Sciences
Jie Song
Jie Song Emory University
Robert L. Gunshor
Robert L. Gunshor Purdue University West Lafayette
Stephen J. Pearton
Stephen J. Pearton University of Florida
Fan Ren
Fan Ren University of Florida
Mary H. Crawford
Mary H. Crawford Sandia National Laboratories
In-Hwan Lee
In-Hwan Lee Korea University
Heonsu Jeon
Heonsu Jeon Seoul National University
Hiroshi Amano
Hiroshi Amano Nagoya University

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